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41. 发明公开

EP1536416A3 Information recording apparatus, information recording method, and information recording medium 有权转让
标题翻译：数据记录装置，数据记录方法和数据记录介质
公开(公告)号：EP1536416A3
公开(公告)日：2006-09-06
申请号：EP04027804.6
申请日：2004-11-23
申请人： Pioneer Corporation , KABUSHIKI KAISHA TOSHIBA , MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , SAMSUNG ELECTRONICS CO., LTD. , Hitachi Ltd.
发明人： Sawabe, Takao, c/o Pioneer Corporation , Nagai, Koichi, c/o Intellectual Prop. Division , Taniguchi, Shoji c/o Pioneer Corporation , Kobayashi, Tadashi, c/o Toshiba Corporation , Yamaguchi, Hiroyuki , Akahira, Nobuo , Ko, Jung-wan , Takahashi, Masahiko, c/o Hitachi, Ltd. , Kurebayashi, Masaaki, c/o Hitachi, Ltd.
IPC分类号： G11B7/0045 , G11B7/24 , G11B19/28 , G11B27/30
CPC分类号： G11B20/1217 , G11B7/0037 , G11B7/0045 , G11B7/00736 , G11B19/26 , G11B20/10 , G11B2020/10981 , G11B2020/1275 , G11B2220/2562
摘要： A recording medium is one on which recording information can be recorded at one or several types of recording speeds. The recording medium comprises a recording area (DA) on which the recording information is recorded, and a recording speed range information recording area (SC) which can be necessarily used when recording the recording information on the recording medium and contains at least a basic recording speed preset for each type of the recording medium, and on which recording speed range information indicating a range of the recording speed preset for each type of the recording medium is recorded.

42. 发明公开

EP1537815A3 Vacuum cleaner brush assembly 有权转让
标题翻译：刚毛装置用于真空吸尘器
公开(公告)号：EP1537815A3
公开(公告)日：2006-06-21
申请号：EP04254207.6
申请日：2004-07-14
申请人： Samsung Gwangju Electronics Co., Ltd.
发明人： Lee, Byung-jo, 101-1812 Goggan Apartment
IPC分类号： A47L9/04
CPC分类号： A47L9/0416
摘要： A locking unit (120) of a brush assembly (100) for use with a vacuum cleaner has a release preventing member (200) so that if the brush assembly accidentally falls, the release preventing member conveniently keeps upper and lower housings (101,102) of the assembly assembled. The brush assembly includes the upper and lower housings. A connector (110) is secured in one of the upper and lower housings and is adapted to direct air in the upper and lower housings towards a suction force generator of the vacuum cleaner. A locking unit (120) rotates on the connector (110) to open and sealingly close the upper and the lower housings. The release preventing member is formed between the connector and the locking unit to prevent release of the locking unit.

43. 发明公开

EP1411559A3 Semiconductor optoelectronic device 有权转让
标题翻译：一种光电子半导体器件
公开(公告)号：EP1411559A3
公开(公告)日：2006-06-07
申请号：EP03254704.4
申请日：2003-07-28
申请人： Samsung Electro-mechanics Co., Ltd
发明人： Lee, Sung-nam, 409-1102 Cheongmyeong Jugong , Ha, Kyoung-ho , Sakong, Tan Samsung Advanced Institute Technology
IPC分类号： H01L33/00 , H01S5/20 , H01S5/343
CPC分类号： H01S5/20 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3211 , H01S5/34333
摘要： A highly efficient semiconductor optoelectronic device is provided. The semiconductor optoelectronic device includes an active layer, an upper waveguide layer provided on the active layer and a lower waveguide layer provided under the active layer, an upper cladding layer provided on the upper waveguide layer and a lower cladding layer provided under the lower waveguide layer, a substrate supporting a deposited structure of the lower cladding layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper cladding layer, and upper and lower optical confinement layers provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, respectively, and having an energy gap that is smaller than those of the upper and lower waveguide layers but greater than that of the active layer.

44. 发明公开

EP1612806A3 Semiconductor memory device 有权转让
标题翻译：半导体存储器件
公开(公告)号：EP1612806A3
公开(公告)日：2006-05-10
申请号：EP05254075.4
申请日：2005-06-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Kaoru , Ito, Nobuhiko , Yamauchi, Yoshimitsu
IPC分类号： G11C16/26 , G11C16/24 , G11C16/04
CPC分类号： G11C16/26 , G11C16/0491 , G11C16/24
摘要： A semiconductor memory device having a virtual ground line type memory array structure includes a readout circuit for selecting a pair of selected bit lines connected to the source and the drain of a memory cell to be read, applying a predetermined voltage to between the paired selected bit lines, and sensing a memory cell current flowing through the memory cell to be read, and a counter potential generation circuit for generating from an intermediate node potential, which is higher than any level of the potential on the selected bit lines and supplied from an intermediate node on a current path for feeding the memory cell current in the readout circuit, a counter potential which varies in the same direction as of the intermediate node potential depending on the memory cell current so that its variation is greater than that of the intermediate node potential, wherein the counter potential is applied to an unselected bit line allocated next to one at a high level of the paired selected bit lines.
摘要翻译：一种具有虚拟接地线型存储器阵列结构的半导体存储器件包括：读出电路，用于选择连接到待读取的存储器单元的源极和漏极的一对选择位线，将预定电压施加到成对选择位之间并且感测流过待读取的存储器单元的存储器单元电流，以及反向电压产生电路，用于从中间节点电势产生电势，所述中间节点电势高于所选位线上的电势的任何电平，并且从中间电路在用于馈送读出电路中的存储器单元电流的电流路径上的节点，取决于存储器单元电流而在与中间节点电势相同的方向上变化的相对电势，使得其变化大于中间节点电势其中所述计数器电位被施加到所选择的配对的高电平之一旁边分配的未选位线位线。

45. 发明公开

EP1612806A2 Semiconductor memory device 有权转让
标题翻译： Halbleiterspeicherbaustein
公开(公告)号：EP1612806A2
公开(公告)日：2006-01-04
申请号：EP05254075.4
申请日：2005-06-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Kaoru , Ito, Nobuhiko , Yamauchi, Yoshimitsu
IPC分类号： G11C16/26 , G11C16/24 , G11C16/04
CPC分类号： G11C16/26 , G11C16/0491 , G11C16/24
摘要： A semiconductor memory device having a virtual ground line type memory array structure includes a readout circuit for selecting a pair of selected bit lines connected to the source and the drain of a memory cell to be read, applying a predetermined voltage to between the paired selected bit lines, and sensing a memory cell current flowing through the memory cell to be read, and a counter potential generation circuit for generating from an intermediate node potential, which is higher than any level of the potential on the selected bit lines and supplied from an intermediate node on a current path for feeding the memory cell current in the readout circuit, a counter potential which varies in the same direction as of the intermediate node potential depending on the memory cell current so that its variation is greater than that of the intermediate node potential, wherein the counter potential is applied to an unselected bit line allocated next to one at a high level of the paired selected bit lines.
摘要翻译：具有虚拟接地线型存储器阵列结构的半导体存储器件包括读出电路，用于选择连接到要读取的存储器单元的源极和漏极的一对选定位线，将预定电压施加在成对选定位之间并且感测流过待读取的存储器单元的存储单元电流，以及用于从中间节点电位产生的逆电位产生电路，该中间节点电位高于所选位线上的电位的任何电平并且从中间级在电流路径上用于馈送读出电路中的存储单元电流的一个节点，取决于存储单元电流而在与中间节点电位相同的方向上变化的反电位，使得其变化大于中间节点电位的变化，其中所述计数器电位被施加到在所选择的所述配对的高电平处分配的旁边的未选择的位线位线。

46. 发明公开

EP1528752A3 Kommunikationssystem und Verfahren zur Bearbeitung medizinischer Daten 有权转让
标题翻译：通信系统和方法用于处理医疗数据
公开(公告)号：EP1528752A3
公开(公告)日：2005-09-07
申请号：EP04023327.2
申请日：2004-09-30
申请人： Corscience GmbH & Co. KG
发明人： Gmelin, Moritz, Dipl.-Inf. , Bolz, Armin, Prof. Dr.
IPC分类号： H04L29/08
CPC分类号： H04L67/28 , G06F19/00 , G06Q50/24 , G16H10/60 , G16H40/20 , H04L67/12 , H04L67/2804 , H04L67/2819 , H04L67/2823 , H04L67/2895
摘要： Die vorliegende Erfindung betrifft ein Kommunikationssystem zur Bearbeitung medizinischer Daten mit einem medizinischen Gerät, das Erfassungsmittel zur Erfassung medizinischer Daten, eine Speichereinheit zur abrufbaren Speicherung der Daten sowie eine Kommunikationsschnittstelle zur Datenübergabe aufweist, mit einem Server, der eine Speichereinheit, in der die von dem medizinischen Gerät erfassten Daten abrufbar gespeichert sind, sowie eine Kommunikationsschnittstelle aufweist, mittels derer der Server mit einem oder mehreren Clients wenigstens zeitweise in Verbindung steht, sowie mit wenigstens einem Client, der eine Speichereinheit, eine Auswerteeinheit sowie eine Kommunikationsschnittstelle aufweist, wobei in der Speichereinheit die von dem medizinischen Gerät erfassten Daten gespeichert sind, wobei die Auswerteeinheit eine Auswerteapplikation zur Einsicht, Aufbereitung, Änderung oder Ergänzung der in der Speichereinheit des Clients gespeicherten Daten umfasst, wobei mittels der Kommunikationsschnittstelle die in dem Client aufbereiteten, geänderten oder ergänzten Daten von dem Client an den Server übermittelbar sind und wobei diese Daten in der Speichereinheit des Servers speicherbar sind.
Die Erfindung betrifft ferner ein Vefahren zur Bearbeitung medizinischer Daten.

47. 发明公开

EP1566665A1 Apparatus and method for providing ambient parameter data and for determining weather information 有权转让
标题翻译：装置和方法，用于产生环境参数和用于确定天气信息
公开(公告)号：EP1566665A1
公开(公告)日：2005-08-24
申请号：EP04003872.1
申请日：2004-02-20
申请人： Harman Becker Automotive Systems GmbH
发明人： Brülle-Drews, Christian
IPC分类号： G01W1/10 , G01C21/20 , G08G1/0967
CPC分类号： G01W1/10 , G01C21/26 , G08G1/20
摘要： The invention is directed to a method for providing ambient parameter data of a vehicle, comprising the steps of automatically determining a value of at least one ambient parameter via an ambient parameter sensor of a vehicle, and automatically initiating transmitting the value of the at least one ambient parameter to an external server.
摘要翻译：本发明涉及一种方法，用于提供车辆的环境参数数据，通过至少一个环境参数的一个值，包括自动确定的采矿以下步骤中的一个车辆的环境参数传感器，并自动地发起发送所述至少一个的值环境参数到外部服务器上。

48. 发明公开

EP1233493A3 GaN based vertical cavity surface emitting laser diode 有权转让
标题翻译：基于GaN的表面发射激光器的垂直腔
公开(公告)号：EP1233493A3
公开(公告)日：2004-08-18
申请号：EP02250606.7
申请日：2002-01-29
申请人： SAMSUNG ELECTRO-MECHANICS Co. Ltd.
发明人： Park, Yong-jo , Jeon, Heon-su , Ha, Kyoung-ho , Park, Si-hyun
IPC分类号： H01S5/183 , H01S5/042 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/18388 , H01S5/18394 , H01S5/34333
摘要： A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on opposite sides of the active layer; a first distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second BDR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.

49. 发明公开

EP1418623A2 Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor 有权转让
标题翻译：一种非易失性可变电阻存储器元件，以及非易失性可变电阻器的缩放方法
公开(公告)号：EP1418623A2
公开(公告)日：2004-05-12
申请号：EP03025694.5
申请日：2003-11-07
申请人： Sharp Kabushiki Kaisha
发明人： Tajiri, Masayuki
IPC分类号： H01L27/10
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/72 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L28/20 , H01L45/04 , H01L45/1226 , H01L45/147
摘要： Provided are a nonvolatile variable resistor with a structure capable of suppressing an increase in resistance in a case where scaling is applied to reduce a projected area on a plane, a memory device using the nonvolatile variable resistor, and a scaling method of a nonvolatile variable resistor. A first electrode and a second electrode formed on a substrate face each other in a direction of a surface of the substrate. The first electrode is used as an inner electrode, a nonvolatile variable resistance body is formed on an outer surface of the first electrode and the second electrode is formed as an outer electrode on an outer surface of the nonvolatile variable resistance body.
摘要翻译：本发明提供具有能够抑制计划增加的电阻在应用缩放，以减少对一个投影面积的情况下的结构的非易失性可变电阻器，存储装置使用非易失性可变电阻器，以及非易失性可变电阻器的缩放方法，第一电极和上形成的基底上的第二电极彼此面对的基片的表面的方向。第一电极被用作内电极，非易失性可变电阻体形成在所述第一电极的外表面和所述第二电极在所述非易失性可变电阻体的外表面形成为与外电极上。

50. 发明公开

EP1411559A2 Semiconductor optoelectronic device 有权转让
标题翻译： Optoelektronische Halbleitervorrichtung
公开(公告)号：EP1411559A2
公开(公告)日：2004-04-21
申请号：EP03254704.4
申请日：2003-07-28
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Sung-nam , Ha, Kyoung-ho , Sakong, Tan Samsung Advanced Institute Technology
IPC分类号： H01L33/00
CPC分类号： H01S5/20 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3211 , H01S5/34333
摘要： A highly efficient semiconductor optoelectronic device is provided. The semiconductor optoelectronic device includes an active layer, an upper waveguide layer provided on the active layer and a lower waveguide layer provided under the active layer, an upper cladding layer provided on the upper waveguide layer and a lower cladding layer provided under the lower waveguide layer, a substrate supporting a deposited structure of the lower cladding layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper cladding layer, and upper and lower optical confinement layers provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, respectively, and having an energy gap that is smaller than those of the upper and lower waveguide layers but greater than that of the active layer.
摘要翻译：半导体光电子器件具有在有源层和上波导层之间以及分别在有源层和下波导层之间设置的上和下光限制层。光学限制层之间的能隙小于波导层的能隙，但是大于有源层的能隙。在上波导层和上光限制层之间插入电子阻挡层。光限制层是氮化物基材料，并掺杂有硅或镁。光学限制层的厚度大于100（优选为100-500）A°。

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