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41. 发明公开

EP1767664A4 ELECTROLESS GOLD PLATING LIQUID 有权转让
标题翻译：流体动力TO地段GILT
公开(公告)号：EP1767664A4
公开(公告)日：2008-07-02
申请号：EP05765068
申请日：2005-06-23
申请人： NIPPON MINING CO
发明人： AIBA AKIHIRO , KAWAMURA KAZUMI
IPC分类号： C23C18/42
CPC分类号： C23C18/54 , C23C18/1651 , C23C18/32 , Y10T428/31678
摘要： A non-cyanide substitution-type electroless gold plating liquid, which has low toxicity, can be used at a pH value around neutrality and has further improved solder adhesion and film adhesion, is provided. The electroless gold plating liquid is characterized by comprising a noncyanide water-soluble gold compound, a pyrosulfurous acid compound, and a thiosulfuric acid compound. The plating liquid preferably further contains a sulfurous acid compound or an aminocarboxylic acid compound. Pyrosulfurous acid compounds usable herein include pyrosulfurous acid or its alkali metal salts, alkaline earth metal salts, and ammonium salts.

42. 发明公开

EP1829985A4 Sb-Te ALLOY SINTERING PRODUCT TARGET AND PROCESS FOR PRODUCING THE SAME 有权转让
标题翻译： SB-TE-LEGIERUNGSSINTERPRODUKTTARGET UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP1829985A4
公开(公告)日：2008-06-04
申请号：EP05811469
申请日：2005-11-29
申请人： NIPPON MINING CO
发明人： TAKAHASHI HIDEYUKI
IPC分类号： C23C14/34 , C23C14/35 , G11B7/24 , G11B7/241 , G11B7/242 , G11B7/26
CPC分类号： C22C12/00 , B22F1/0055 , B22F2998/10 , B22F2999/00 , C22C28/00 , C23C14/3414 , G11B7/2433 , G11B7/266 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , B22F9/082 , B22F3/02 , B22F3/10 , B22F9/04
摘要： A sputtering target of Sb-Te alloy sintering product from atomized powder consisting of substantially spherical particles of an Sb-Te alloy, characterized in that the spherical atomized powder consists of particles having been flattened by crushing, and that flat particles exhibiting a ratio of minor axis to major axis (flattening degree) of ≤ 0.6 occupy ≥ 50% of the whole particles. Further, there is provided such a target of Sb-Te alloy sintering product characterized in that particles whose major axis directions align within ±45° against the direction parallel to target surface occupy ≥ 60% of the whole particles. Still further, there is provided such a target of Sb-Te alloy sintering product characterized in that the oxygen content of the target is ≤ 1500 wtppm. Thus, the structure of Sb-Te alloy sputtering target can be uniformalized and miniaturized, thereby inhibiting cracking of the sintered target and preventing arcing at the time of sputtering. Moreover, any surface ruggedness attributed to sputter erosion can be reduced, thereby enabling production of an Sb-Te alloy sputtering target of high quality.
摘要翻译：提供一种Sb-Te合金烧结体，其使用由Sb-Te合金的大致球状的粒子组成的雾化粉末，其中，所述球状雾化粉末由粉碎扁平的粒子构成，平坦化粒子的比例（平坦度比）的短轴和长轴为0.6以下，占总粒子的50％以上。利用该Sb-Te合金烧结体靶，在与靶表面平行的方向上排列在±45°以内的长轴取向的粒子占总体粒子的60％以上。此外，该Sb-Te合金烧结体靶的氧浓度为1500重量ppm以下。因此，可以使Sb-Te合金溅射靶结构均一化和细化，可以抑制烧结靶中的裂纹的产生，并且可以抑制溅射中的电弧放电。此外，为了获得高质量的Sb-Te合金溅射靶，可以减少由溅射侵蚀引起的表面粗糙度。

43. 发明公开

EP1865090A4 DEEP-POT-SHAPED COPPER SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权转让
标题翻译：深锅形状的铜PUTTER目标及其制造方法
公开(公告)号：EP1865090A4
公开(公告)日：2008-04-16
申请号：EP06713265
申请日：2006-02-08
申请人： NIPPON MINING CO
发明人： FUKUSHIMA ATSUSHI , TSUKAMOTO SHIRO
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285
CPC分类号： C23C14/34 , C23C14/3407 , C23C14/3414 , H01J37/3414
摘要： A deep-pot-shaped copper sputtering target produced by stamp forging, every locality of the inside surface of which exhibits a Vickers hardness (Hv) of ≥ 70. The deep-pot-shaped copper sputtering target in its structure may have an average crystal grain diameter of ≤ 65 μm. Further, there is provided a deep-pot-shaped copper sputtering target which at its inside surface has crystal orientations (220), (111), (200) and (311) determined by X-ray diffractometry, and which at its eroded surface has crystal orientation (220), main orientation. It is intended to provide a process for stably producing a sputtering target excelling in performance by causing crystal grain diameters to be fine and uniform through improving and innovating of forging and heat treatment steps and to obtain a sputtering target of high quality by the use of the process.

44. 发明公开

EP1471164A4 COPPER ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE TARGET 有权
标题翻译：溅射铜合金及其制造方法
公开(公告)号：EP1471164A4
公开(公告)日：2008-04-09
申请号：EP02783764
申请日：2002-12-04
申请人： NIPPON MINING CO
发明人： OKABE TAKEO , MIYASHITA HIROHITO
IPC分类号： C22C9/00 , C22C9/01 , C22C9/02 , C23C14/34 , H01L21/768 , C22C19/00 , C22F1/00 , H01L21/285
CPC分类号： C22C9/02 , C22C9/00 , C22C9/01 , C23C14/3414 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The target material comprises 0.4-5 weight% of tin, without precipitate. The resistivity of the target material is 2.2 Microohm.cm or more. An independent claim is also included for manufacturing method of copper alloy sputtering target.

45. 发明公开

EP1452628A4 COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING AND SEMICONDUCTOR WAFER PLATED THEREBY WITH LITTLE PARTICLE ADHESION 审中-公开
标题翻译：方法GALVANSICHEN镀铜，纯度铜阳极电偶，从而电镀铜包覆铜半导体晶片低颗粒粘附
公开(公告)号：EP1452628A4
公开(公告)日：2007-12-05
申请号：EP02760809
申请日：2002-09-05
申请人： NIPPON MINING CO
发明人： AIBA A , OKABE T , SEKIGUCHI J
IPC分类号： C25D3/38 , C25D5/00 , C25D7/12 , C25D17/10 , H01L21/288 , C25D19/00
CPC分类号： C25D7/123 , C25D3/38 , C25D17/001 , C25D17/10 , C25D21/04
摘要： An copper electroplating method for performing copper electroplating by using an anode formed of pure copper in which the grain size of the pure copper anode is not greater than 10 microm, or not smaller than 60 microm, or pure copper non-recrystallized. A copper electroplating method of a semiconductor wafer which can suppress generation of particles such as sludge on the anode side in plating liquid and prevent adhesion of particles to the semiconductor wafer when performing the copper electroplating, a pure copper anode for the copper electroplating, and the semiconductor wafer plated thereby with little adhesion of particles.

46. 发明公开

EP1569269A4 EPITAXIAL GROWING METHOD AND SUBSTRATE FOR EPITAXIAL GROWTH 有权转让
标题翻译：外延生长和衬底外延生长
公开(公告)号：EP1569269A4
公开(公告)日：2007-10-24
申请号：EP03723368
申请日：2003-05-14
申请人： NIPPON MINING CO
发明人： NAKAMURA MASASHI , KURITA HIDEKI
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L21/302 , H01L21/31
CPC分类号： C30B25/02 , C30B25/183 , C30B29/40 , H01L21/02392 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/302
摘要： An epitaxial growing method for growing a compound semiconductor layer (for example, a III-V compound semiconductor layer such as an InGaAs layer, an AlGaAs layer, an AlInAs layer, or an AlInGaAs layer) comprising three or four elements on a substrate (for example, an InP substrate) for growth held by a substrate support by an organic metal vapor phase deposition method, wherein the whole effective use region of the substrate is so polished that the angel of inclination with respect to the (100)-direction lies in the range from 0.00° to 0.03° or from 0.04° to 0.24°, and the compound semiconductor layer with a thickness of 0.5 mum or more is formed on the substrate for growth.

47. 发明公开

EP1674396A4 PACKAGING DEVICE AND PACKAGING METHOD FOR HOLLOW CATHODE TYPE SPATTERING TARGET 审中-公开
标题翻译：包装设备和包装过程的空心阴极溅射靶
公开(公告)号：EP1674396A4
公开(公告)日：2007-08-22
申请号：EP04773025
申请日：2004-09-14
申请人： NIPPON MINING CO
发明人： OKABE T , NAGASAWA M
IPC分类号： B65B31/04 , B65D81/20 , C23C14/34
CPC分类号： H01J37/342 , B65B31/04 , B65D81/2023
摘要： A packaging device and a packaging method for a hollow cathode type spattering target, characterized in that, in the hollow cathode type spattering target, a cover of such a size that can cover the space part of the target is installed, one or a plurality of through holes are formed in the cover, a resin bag is applied onto the through holes, and the inside thereof is evacuated. Thus, even the inside of a hollow part covered by the resin bag can be evacuated.

48. 发明公开

EP1652944A4 HIGHLY PURE HAFNIUM MATERIAL, TARGET THIN FILM COMPRISING THE SAME AND METHOD FOR PRODUCING HIGHLY PURE HAFNIUM 有权
标题翻译：高纯铪，TARGET薄膜体和工艺生产高纯度铪
公开(公告)号：EP1652944A4
公开(公告)日：2007-05-23
申请号：EP04727690
申请日：2004-04-15
申请人： NIPPON MINING CO
发明人： SHINDO YUICHIRO
IPC分类号： C22B3/00 , C22B1/08 , C22B3/26 , C22B9/22 , C22B34/14 , C23C14/34
CPC分类号： C22B34/14 , C22B1/08 , C22B3/0005 , C22B9/228 , Y02P10/234
摘要： Provided is a manufacturing method of high purity hafnium including the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.

49. 发明公开

EP1466999A4 METHOD FOR CONNECTING MAGNETIC SUBSTANCE TARGET TO BACKING PLATE AND MAGNETIC SUBSTANCE TARGET 有权
标题翻译：方法连接磁物质的终端与载板和目标的磁性物质
公开(公告)号：EP1466999A4
公开(公告)日：2007-05-16
申请号：EP02781766
申请日：2002-11-14
申请人： NIPPON MINING CO
发明人： YAMAKOSHI YASUHIRO , MOGAKI KENICHI
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3255 , H01J37/32559 , H01J37/3414 , H01J37/3426 , Y10T428/12465
摘要： A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized by comprising the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining a flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate with the flatness maintained, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a rather simple operation.

50. 发明公开

EP1432292A4 CARRIER-ATTACHED COPPER FOIL AND PRINTED BOARD USING THE COPPER FOIL 审中-公开
标题翻译：载体附着铜膜和印刷电路板铜箔
公开(公告)号：EP1432292A4
公开(公告)日：2006-10-11
申请号：EP02760590
申请日：2002-08-08
申请人： NIPPON MINING CO
发明人： NATSUME TAKASHI , AKASE FUMIAKI
IPC分类号： H05K1/09 , B32B15/08 , H05K1/16 , H05K3/00 , H05K3/02 , H05K3/46
CPC分类号： H05K3/4626 , H05K1/16 , H05K1/162 , H05K1/167 , H05K3/025 , H05K2201/0209 , H05K2201/0355 , H05K2201/0358 , H05K2203/0152 , Y10T428/12438 , Y10T428/12569 , Y10T428/24777 , Y10T428/24802 , Y10T428/31529 , Y10T428/31678
摘要： The present invention relates to a carrier-added copper foil and a print substrate using such copper foil characterized in comprising a resin layer and a functional material layer at least on a part of the copper foil. A carrier-added copper foil and a print substrate using such copper foil are obtained by forming an insulating layer and functional material layer having an area smaller than the area of the copper foil on the surface of the carrier-added copper foil with the screen printing method, thereby improving the handling of such copper foil, preventing the adhesion of contaminants such as resin powder on the copper foil surface during the cutting procedure, preventing scratches and dimples caused by foreign matter, and effectively preventing the generation of scratches, wrinkles and creases during the cutting, packaging and transportation procedures.

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