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1. 发明授权

EP2601140B1 PROCEDE DE SEPARATION DES TETRACHLORURES DE ZIRCONIUM ET D'HAFNIUM DE LEURS MELANGES 有权
公开(公告)号：EP2601140B1
公开(公告)日：2020-03-04
申请号：EP11757381.6
申请日：2011-08-02
申请人： Centre National de la Recherche Scientifique
发明人： SANTINI-SCAMPUCCI, Catherine , CHAUVIN, Yves , CAMPBELL, Paul
IPC分类号： C01G25/00 , C01G25/04 , C01G27/00 , C01G27/04 , C22B34/14 , C22B3/42

2. 发明公开

EP3438296A1 METHODS FOR REDUCING IMPURITIES IN MAGNESIUM, PURIFIED MAGNESIUM, AND ZIRCONIUM METAL PRODUCTION 有权
公开(公告)号：EP3438296A1
公开(公告)日：2019-02-06
申请号：EP18193065.2
申请日：2013-07-18
申请人： ATI Properties LLC
发明人： Coffin, Scott , Fajardo, Arnel M
IPC分类号： C22B9/10 , C22B26/22 , C22B34/14 , C22C23/00
摘要： The invention provides a purified magnesium consisting of magnesium, greater than 1000 up to 3000 ppm zirconium, and incidental impurities, wherein the incidental impurities include no more than 0.007 weight percent aluminum and no more than 0.005 weight percent hafnium. The invention further provides a method of producing zirconium metal using a magnesium reductant comprising the purified magnesium.

3. 发明公开

EP3256424A1 PROCESS FOR IMPROVING THE GRADE AND OPTICAL QUALITY OF ZIRCONS 有权
标题翻译：提高锆石的质量和光学质量的方法
公开(公告)号：EP3256424A1
公开(公告)日：2017-12-20
申请号：EP16748479.9
申请日：2016-02-08
申请人： Iluka Resources Limited
发明人： DUNDAS, Phillip James
IPC分类号： C01G25/06 , C22B34/14 , C22B3/08 , C04B35/16
CPC分类号： C22B34/14 , C01B33/20 , C01G23/008 , C01G25/06 , C01G49/14 , C01P2006/62 , C01P2006/63 , C01P2006/64 , C01P2006/80 , C04B35/481 , C04B35/62625 , C04B35/62645 , C04B2235/72 , C04B2235/9661 , C22B3/08 , C22B9/10
摘要： A process for improving the grade and optical quality of zircon, comprising: baking a mixture of a zircon feed and concentrated sulphuric acid at a baking temperature in the range of from 200 up to 400° C., and for a time to form water leachable sulphates with impurities therein including at least iron and titanium; leaching the baked mixture to dissolve the leachable sulphates; and separating the zircon from the leachate containing the leached sulphates, which separated zircon is thereby of improved grade and optical quality.

4. 发明授权

EP2567766B1 VERFAHREN ZUR HERSTELLUNG VON LEGIERUNGSPULVERN AUF DER BASIS VON TITAN LEGIERT MIT KUPFER 有权转让
标题翻译：过程，用于基于TITAN合金粉末合金铜
公开(公告)号：EP2567766B1
公开(公告)日：2016-12-14
申请号：EP12190956.8
申请日：2009-02-27
申请人： Chemetall GmbH
发明人： Karaca, Ahmet , Sermond, Bernd , Wilfing, Gerhard
IPC分类号： B22F9/02 , B22F9/22 , C22C14/00 , C22C16/00 , C01B6/02 , C01B6/24 , C01G23/04 , C01G25/02 , C22B7/00 , C22B34/12 , C22B34/14 , C22C1/04 , B22F9/20 , C22B5/04 , C22C9/00 , C22C19/03 , C22C27/04
CPC分类号： B22F9/20 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C01B6/24 , C22B5/04 , C22B34/1268 , C22B34/1286 , C22B34/14 , C22C1/0458 , C22C9/00 , C22C14/00 , C22C16/00 , C22C19/03 , C22C27/04 , B22F1/0011 , C23F1/00 , B22F2201/11 , B22F2201/013 , B22F2201/12 , B22F2201/02

5. 发明公开

EP2828415A4 PROCESSES FOR RECOVERING RARE EARTH ELEMENTS AND RARE METALS 审中-公开
标题翻译：一种获得和稀有金属稀土元素
公开(公告)号：EP2828415A4
公开(公告)日：2016-05-18
申请号：EP13764060
申请日：2013-03-13
申请人： ORBITE ALUMINAE INC
发明人： BOUDREAULT RICHARD , KRIVANEC HEINZ , DITTRICH CARSTEN , LABRECQUE-GILBERT MARIE-MAXIME
IPC分类号： C22B3/10 , C22B3/06 , C22B3/46 , C22B26/12 , C22B34/14 , C22B34/34 , C22B58/00 , C22B59/00
CPC分类号： C22B59/00 , C22B3/20 , C22B3/42 , C22B58/00 , Y02P10/234

6. 发明公开

EP2995693A1 EXTRACTION/SEPARATION METHOD 有权
标题翻译： EXTRAKTIONS- / TRENNVERFAHREN
公开(公告)号：EP2995693A1
公开(公告)日：2016-03-16
申请号：EP15182474.5
申请日：2015-08-26
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： SUGAHARA, Hiroto
IPC分类号： C22B3/26 , C22B34/14 , C22B59/00
摘要： An extraction/separation method involving the step of contacting an organic phase containing a dialkyldiglycol amic acid extractant R 1 R 2 NCOCH 2 OCH 2 COOH with an aqueous solution containing scandium and zirconium and/or hafnium, thereby extracting zirconium and/or hafnium into the organic phase. The purity of scandium can be efficiently increased by the simple step of solvent extraction.
摘要翻译：一种提取/分离方法，包括使含有二烷基二甘醇酰胺酸萃取剂R 1 R 2 NCOCH 2 OCH 2 COOH的有机相与含有钪和锆和/或铪的水溶液接触的步骤，从而将锆和/或铪萃取到有机相。通过溶剂萃取的简单步骤可以有效地提高钪的纯度。

7. 发明公开

EP2705169A4 PROCESSES FOR RECOVERING RARE EARTH ELEMENTS FROM VARIOUS ORES 审中-公开
标题翻译：中回收从不同的矿石稀土元素
公开(公告)号：EP2705169A4
公开(公告)日：2015-04-15
申请号：EP12779978
申请日：2012-05-03
申请人： ORBITE ALUMINAE INC
发明人： BOUDREAULT RICHARD , PRIMEAU DENIS , FOURNIER JOEL , SIMONEAU RAYMOND , GARCIA MARIA CRISTINA , KRIVANEC HEINZ , DITTRICH CARSTEN
IPC分类号： C22B3/10 , C22B3/06 , C22B3/46 , C22B26/12 , C22B34/14 , C22B34/34 , C22B58/00 , C22B59/00
CPC分类号： C22B59/00 , C22B3/0005 , C22B3/10 , C22B3/46 , C22B26/12 , C22B34/14 , C22B34/34 , C22B58/00 , Y02P10/234

8. 发明公开

EP2828415A1 PROCESSES FOR RECOVERING RARE EARTH ELEMENTS AND RARE METALS 审中-公开
标题翻译：一种获得和稀有金属稀土元素
公开(公告)号：EP2828415A1
公开(公告)日：2015-01-28
申请号：EP13764060.3
申请日：2013-03-13
申请人： Orbite Aluminae Inc.
发明人： BOUDREAULT, Richard , PRIMEAU, Denis , KRIVANEC, Heinz , DITTRICH, Carsten , LABRECQUE-GILBERT, Marie-Maxime
IPC分类号： C22B3/10 , C22B3/38 , C22B3/42 , C22B3/46 , C22B34/14 , C22B58/00 , C22B59/00
CPC分类号： C22B59/00 , C22B3/20 , C22B3/42 , C22B58/00 , Y02P10/234
摘要： There are provided processes for recovering at least one rare earth element. Such processes comprise obtaining an acidic composition comprising (i) at least one rare earth element and optionally at least one rare metal; and reacting the composition with a precipitating agent so as to substantially selectively precipitate a first rare earth element and optionally a first rare metal. For example, various rare earth elements (such as scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, etc) and various rare metals (such as indium, zirconium, lithium, gallium, etc.) can be extracted by using such processes.

9. 发明公开

EP2017360A2 High purity hafnium, high purity hafnium target and method of manufacturing a thin film using high purity hafnium 有权
标题翻译：高纯度铪，以及高纯度Hafniumtarget方法使用高纯度铪的制造薄膜
公开(公告)号：EP2017360A2
公开(公告)日：2009-01-21
申请号：EP08165172.1
申请日：2004-10-25
申请人： Nippon Mining & Metals Co., Ltd.
发明人： SHINDO, Yuichiro
IPC分类号： C22B34/14
CPC分类号： C22C27/00 , C22B34/14 , C23C14/3414
摘要： The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.
摘要翻译：本发明涉及高纯度铪具有纯度为4N或更高不含锆和气体成分和40重量ppm或更低的氧含量，并寻求高纯度铪靶和薄膜形成，并且具有的纯度的高纯度铪 4N以上不含锆和气体成分并且其中的硫和磷的含量分别为10重量ppm或更低。因此，本发明涉及一种使用具有减小的锆作为原料海绵铪高纯度铪材料，并且其中氧，硫和在铪含磷的含量降低时，以及到目标和薄寻求材料成膜，并以高纯度铪的制造方法。从而提供了有效且稳定的制造技术，使高纯度铪材料的制造中，与目标和从寻求材料的薄膜形成的。

10. 发明授权

EP1329526B1 METHOD FOR PRODUCING HIGH-PURITY ZIRCONIUM AND HAFNIUM FOR SPUTTERING TARGETS 有权
标题翻译：工艺用于制造溅射高纯锆和铪
公开(公告)号：EP1329526B1
公开(公告)日：2007-09-12
申请号：EP01947791.8
申请日：2001-06-29
申请人： Nippon Mining & Metals Co., Ltd.
发明人： SHINDO,Y., c/o Isohara Fact.of Nikko Mater,Co. Ltd
IPC分类号： C22B34/14 , C22B9/22 , B22F9/04 , C23C14/34
CPC分类号： H01L21/28194 , B22F9/023 , C22B9/228 , C22B34/14 , C22C1/0458 , C22C16/00 , C22C27/00 , C23C14/3414 , H01L23/53257 , H01L29/51 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： A high purity zirconium or hafnium which is extremely reduced in the contents of an alkali metal such as Na or K, a radioactive element such as U or Th, a transition metal or heavy metal or high melting point metal such as Fe, Ni, Co, Cr, Cu, Mo, Ta or V, and a gas forming element such as C or O; and a method for producing a high purity zirconium or hafnium which allows the production thereof at a low cost; and a method for producing a powder of high purity zirconium or hafnium with safety and at a low cost which comprises using a hydrogenated high purity zirconium or hafnium as a material. The high purity zirconium or hafnium is greatly reduced in the contents of impurities which are obstacles to assurance of operational functions of a semiconductor.

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