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31. 发明公开

EP1132976A3 Optoelectronic material and device application, and method for manufacturing optoelectronic material 审中-公开
标题翻译：照片电子材料，使用相同的和制造方法此设备
公开(公告)号：EP1132976A3
公开(公告)日：2008-04-02
申请号：EP01103836.1
申请日：2001-02-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Yamada, Yuka , Yoshida, Takehito , Suzuki, Nobuyasu , Makino, Toshiharu , Arai, Toshihiro , Kimoto, Kazuhiko
IPC分类号： H01L33/00 , H01L31/028
CPC分类号： H01L31/0284 , H01L31/09 , H01L33/346
摘要： An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

32. 发明公开

EP1516370A1 GE PHOTODETECTORS 审中-公开
标题翻译：锗PHOTODETEKTOREN
公开(公告)号：EP1516370A1
公开(公告)日：2005-03-23
申请号：EP02791346.6
申请日：2002-12-02
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： WADA, Kazumi , CANNON, Douglas, D. , LIU, Jifeng , KIMERLING, Lionel, C. , ISHIKAWA, Yasuhiko
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L27/146 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/103 , H01L31/1808 , H01L31/1864 , H01L31/1872 , Y02E10/50 , Y02P70/521 , Y10S438/933
摘要： A photodetector device includes a plurality of Ge epilazers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.

33. 发明公开

EP1172457A1 Thin film formation method 有权
标题翻译： Verfahren zur BildungdünnerSchichten
公开(公告)号：EP1172457A1
公开(公告)日：2002-01-16
申请号：EP01116824.2
申请日：2001-07-10
申请人： CANON KABUSHIKI KAISHA
发明人： Yajima, Takahiro , Kanai, Masahiro , Sugiyama, Shuichiro
IPC分类号： C23C16/24 , C23C16/509 , H01L31/028
CPC分类号： C23C16/509 , C23C16/24 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M + 200 ≤ Pd ≤ 160M + 333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.
摘要翻译：在放电空间中，衬底201和阴极206彼此间隔d（cm）设置，含有一个或多个硅化合物和氢的气体被引入到放电空间中，并且成膜的产物Pd 压力P（Pa）和d，氢气流量M（SLM）被设定为满足以下关系： 80M +200≤Pd≤160M+ 333，，并且将RF功率施加到产生等离子体，并且在放电空间中的基板201上形成非单晶硅薄膜。因此，提供了一种薄膜形成方法，使得可以形成非晶硅膜，其中可以获得均匀的薄膜分布成膜速率，从而实现大面积的实现和高转换效率，同时实现增加在成膜率上。

34. 发明公开

EP0768719A2 Passivierung von Fullerenen 失效
公开(公告)号：EP0768719A2
公开(公告)日：1997-04-16
申请号：EP96116077.7
申请日：1996-10-08
申请人： HOECHST AKTIENGESELLSCHAFT
发明人： Fünffinger, Martin , Henke, Sascha, Dr. , Stritzker, Bernd, Prof. Dr.
IPC分类号： H01L31/028 , H01L31/0216 , C07C13/00
CPC分类号： B82Y30/00 , C04B41/5003 , C23C14/18
摘要： Die Erfindung betrifft einen Körper, enthaltend Fullerene, der dadurch gekennzeichnet ist, daß die Fullerene von mindestens einer sauerstoffundurchlässigen Schicht bedeckt sind. Die Erfindung betrifft weiter ein Verfahren zum passivieren von derartigen Körpern, indem man die Körper mit einem sauerstoffundurchlässigen Material beschichtet.
Die Vorteile der Erfindung liegen darin, daß die Sauerstoffempfindlichkeit der Fullerene keine Rolle mehr spielt und daß dadurch die Fullerene technisch besser nutzbar werden, unter anderem in der Supraleitung und Optoelektronik.
摘要翻译：该成型品包含涂有不透氧层的富勒烯。还要求保护的是钝化模制品的方法，其中模制品涂覆有不透氧层。

35. 发明授权

EP3490010B1 AVALANCHE PHOTODETECTOR AND IMAGE SENSOR INCLUDING THE SAME 审中-实审
公开(公告)号：EP3490010B1
公开(公告)日：2024-03-13
申请号：EP18171541.8
申请日：2018-05-09
发明人： JO, Sanghyun , LEE, Jaeho , KIM, Haeryong , SHIN, Hyeonjin
IPC分类号： H01L31/11 , H01L31/028 , H01L31/032 , H01L31/0352 , H01L31/101 , H01L31/107 , H01L27/146 , G01S7/481 , G01S17/931 , H10K39/32

36. 发明公开

EP4297092A1 PHOTODETECTORS WITH SUBSTRATE EXTENSIONS ADJACENT PHOTODIODES AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：EP4297092A1
公开(公告)日：2023-12-27
申请号：EP22205695.4
申请日：2022-11-07
申请人： GlobalFoundries U.S. Inc.
发明人： HAZBUN, RAMSEY M. , ELLIS-MONAGHAN, JOHN J. , KRISHNASAMY, RAJENDRAN , ADUSUMILLI, SIVA P.
IPC分类号： H01L27/146 , H01L27/144 , H01L31/18 , H01L31/0352 , H01L31/028 , H01L31/105
摘要： A structure (100) comprising a substrate (101) comprising a substrate base (102) and a substrate extension (104) grown on the substrate base; a photodiode (112) contacting the substrate base, wherein the substrate extension is adjacent the photodiode; an additional device (120) contacting the substrate extension; and a sidewall spacer (114, 116) between the photodiode and the substrate extension, wherein the additional device includes conductive elements (130, 132) within the substrate extension adjacent the sidewall spacer.

37. 发明公开

EP4205184A1 DIODE WITH LIGHT-SENSITIVE INTRINSIC REGION 审中-实审
公开(公告)号：EP4205184A1
公开(公告)日：2023-07-05
申请号：EP21766488.7
申请日：2021-08-27
申请人： IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik
发明人： LISCHKE, Stefan
IPC分类号： H01L31/105 , H01L31/0232 , H01L31/028 , H01L31/0224 , H01L31/0352 , H01L31/18 , G02F1/025

38. 发明授权

EP3605038B1 ELECTROMAGNETIC WAVE DETECTOR, ELECTROMAGNETIC WAVE DETECTOR ARRAY, AND ELECTROMAGNETIC WAVE DETECTION METHOD 有权
公开(公告)号：EP3605038B1
公开(公告)日：2023-04-05
申请号：EP17901942.7
申请日：2017-10-19
发明人： SHIMATANI, Masaaki , OGAWA, Shimpei , FUJISAWA, Daisuke , OKUDA, Satoshi
IPC分类号： H01L31/02 , H01L31/0216 , H01L31/0232 , H01L31/0248 , H01L31/028 , H01L31/113 , H01L27/144 , G01J1/02 , G01J1/42

39. 发明公开

EP4149023A2 PSE DEVICE AND POWERED DEVICE OF OPTICAL POWER SUPPLY SYSTEM, AND OPTICAL POWER SUPPLY SYSTEM 审中-实审
公开(公告)号：EP4149023A2
公开(公告)日：2023-03-15
申请号：EP22205049.4
申请日：2020-04-28
申请人： Kyocera Corporation
发明人： SUGIME, Tomonori
IPC分类号： H04B10/80 , H01L31/0304 , H01L31/032 , H01L31/028
摘要： A power sourcing equipment (PSE) device (110) of an optical power supply system (1A, 1, 1B) includes a semiconductor laser (111) that oscillates with electric power, thereby outputting feed light. The semiconductor laser includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less. A powered device (310) of the optical power supply system includes a photoelectric conversion element (311) that converts feed light into electric power. The photoelectric conversion element includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less.

40. 发明授权

EP3764403B1 FABRICATION D'UN DISPOSITIF PHOTOSENSIBLE À SEMICONDUCTEUR 有权
公开(公告)号：EP3764403B1
公开(公告)日：2023-03-08
申请号：EP20184388.5
申请日：2020-07-07
发明人： LUDURCZAK, Willy , ALIANE, Abdelkader , ANDRE, Luc , OUVRIER-BUFFET, Jean-Louis , WIDIEZ, Julie
IPC分类号： H01L31/028 , H01L31/105 , H01L31/18

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