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31. 发明公开

EP2171762A2 METHOD FOR PRODUCING A SILICON SOLAR CELL WITH A BACK-ETCHED EMITTER AS WELL AS A CORRESPONDING SOLAR CELL 有权
标题翻译：方法用于生产具有RÜCKGEÄTZTEM发射器和相关太阳能电池硅太阳能电池
公开(公告)号：EP2171762A2
公开(公告)日：2010-04-07
申请号：EP08775314.1
申请日：2008-07-23
申请人： Universität Konstanz , Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： HAHN, Giso , HAVERKAMP, Helge , RAABE, Bernd , DASTGHEIB-SHIRAZI, Amir , BOOK, Felix
IPC分类号： H01L31/028
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.

32. 发明公开

EP2135301A2 GRAPHITE-BASED PHOTOVOLTAIC CELLS 审中-公开
标题翻译：石墨为基础的光伏电池
公开(公告)号：EP2135301A2
公开(公告)日：2009-12-23
申请号：EP08731827.5
申请日：2008-03-10
申请人： Wisconsin Alumni Research Foundation , University of Utah Research Foundation
发明人： LAGALLY, Max , LIU, Feng
IPC分类号： H01L31/07 , H01L31/036 , H01L31/028
CPC分类号： H01L31/07 , H01L31/028 , Y02B10/10 , Y02E10/547
摘要： The present invention uses lithographically patterned graphite stacks as the basic building elements of an efficient and economical photovoltaic cell. The basic design of the graphite-based photovoltaic cells includes a plurality of spatially separated graphite stacks, each comprising a plurality of vertically stacked, semiconducting graphene sheets (carbon nanoribbons) bridging electrically conductive contacts, and forming a Schottky contact with one of said electrically conductive contacts.

33. 发明公开

EP1889300A2 INTERNAL GETTERING BY METAL ALLOY CLUSTERS 审中-公开
标题翻译：内部吸除采用合金CLUSTER
公开(公告)号：EP1889300A2
公开(公告)日：2008-02-20
申请号：EP06772252.0
申请日：2006-06-06
申请人： The Regents of the University of California
发明人： BUONASSISI, Anthony , HEUER, Matthias , ISTRATOV, Andrei , PICKETT, Matthew, D. , MARCUS, Matthew, A. , WEBER, Eicke, R.
IPC分类号： H01L31/18 , H01L31/028
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations . Novel compositions for some of the metal alloy clusters are also described.

34. 发明公开

EP1782481A1 PHOTONIC DEVICES MONOLITHICALLY INTEGRATED WITH CMOS 审中-公开
标题翻译：单片集成与CMOS光子元件
公开(公告)号：EP1782481A1
公开(公告)日：2007-05-09
申请号：EP05768673.5
申请日：2005-07-28
申请人： Quantum Semiconductor, LLC
发明人： AUGUSTO, Carlos, J., R., P.
IPC分类号： H01L27/15 , H01L27/144 , H01L33/00 , H01L31/107 , H01L31/0352 , H01L31/103 , H01L31/028
CPC分类号： H01L27/15 , H01L27/142 , H01L27/1443 , H01L27/14603 , H01L27/14643 , H01L31/02027 , H01L31/035236 , H01L31/107 , H01L31/1075 , H01L31/18 , H01L33/005 , H01L33/06
摘要： Photonic devices monolithically integrated with CMOS are disclosed, including sub-100nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.

35. 发明公开

EP1313150A4 METHOD FOR MANUFACTURING SOLAR CELL AND SOLAR CELL 审中-公开
标题翻译：太阳能电池和方法
公开(公告)号：EP1313150A4
公开(公告)日：2006-06-14
申请号：EP01955600
申请日：2001-08-08
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： OKI KONOMU , ABE TAKAO
IPC分类号： C01B33/06 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , H01L31/028 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/068 , H01L31/028 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single crystal wafer; a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has an interstitial oxygen concentration of 15 ppma or less; and a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has a BMD density of 5 x 10 /cm or less. Thus, there can be obtained a solar cell showing little fluctuation of characteristics.

36. 发明公开

EP1627435A2 JUNCTION FOR PHOTOVOLTAIC CELLS, OPTICAL SENSORS OR THE LIKE 审中-公开
标题翻译：过渡光伏电池，光学传感器等
公开(公告)号：EP1627435A2
公开(公告)日：2006-02-22
申请号：EP03780505.8
申请日：2003-12-23
申请人： C.R.F. Società Consortile per Azioni
发明人： PIZZI, Marco
IPC分类号： H01L31/07 , H01L31/108 , H01L31/028 , H01L31/18
CPC分类号： H01L31/07 , H01L31/0284 , H01L31/108 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A junction for photovoltaic cells, optical sensors or the like comprises a microporous or nanoporous silicon layer and a metal or semiconductor layer deposited so as to fill at least partially the pores of the silicon layer.

37. 发明公开

EP1284306A3 Silane composition, silicon film forming method and solar cell production method 有权
标题翻译：硅烷组合物，产生的硅膜和太阳能电池的方法
公开(公告)号：EP1284306A3
公开(公告)日：2004-05-19
申请号：EP02018077.4
申请日：2002-08-13
申请人： JSR Corporation
发明人： Shiho, Hiroshi, c/oJSR Corporation , Kato, Hitoshi, c/oJSR Corporation
IPC分类号： C23C18/12 , H01L31/028 , B05D7/00
CPC分类号： H01L31/1804 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/14 , H01L21/228 , Y02E10/547 , Y02P70/521
摘要： A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula Si n R m (n is an integer of 3 or more, m is an integer of n to (2n + 2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m = 2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

38. 发明公开

EP1398837A1 Photovoltaic device 审中-公开
标题翻译：光伏器件
公开(公告)号：EP1398837A1
公开(公告)日：2004-03-17
申请号：EP02447171.6
申请日：2002-09-09
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)
发明人： Bilyalov, Renat , Ulyashin, Alexander , Poortmans, Jef , Fahrner, Wolfgang
IPC分类号： H01L31/028 , H01L31/072 , H01L31/075
CPC分类号： H01L31/0745 , H01L31/0284 , H01L31/04 , H01L31/0747 , H01L31/077 , Y02E10/50
摘要： The present invention is related to a photovoltaic device, comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third semiconductor material located between the first layer and the second layer which is porous. The present invention also provides a method for producing the photovoltaic device.
摘要翻译：本发明涉及一种光伏器件，其包括第一导电类型的第一半导体材料的第一层，第一层的相反导电类型的第二半导体材料的第二层以及第三层的第三层位于第一层和多孔的第二层之间的半导体材料。本发明还提供了一种制造该光伏器件的方法。

39. 发明公开

EP0954034A2 Light receiving device with quantum-wave interference layers 审中-公开
标题翻译： Lichtempfängermit Quantenwelleninterferenzschichten
公开(公告)号：EP0954034A2
公开(公告)日：1999-11-03
申请号：EP99108229.8
申请日：1999-04-27
申请人： Canare Electric Co., Ltd.
发明人： Kano, Hiroyuki
IPC分类号： H01L31/105 , H01L31/11 , H01L31/0304 , H01L31/028
CPC分类号： B82Y20/00 , H01L31/035236 , Y10S977/712 , Y10S977/759 , Y10S977/76 , Y10S977/761
摘要： A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q 1 to Q 4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C 1 to C 3 . The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A δ layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C 1 to C 3 , electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.
摘要翻译：由具有一对第一层W和第二层B的多个周期的量子波干涉层Q1至Q4以及载流子积累层C1至C3构成的pin结结构的光接收装置。第二层B具有比第一层W更宽的带隙。第一层W和第二层B的厚度通过在第一层中的每一层中乘以载波量子波的波长的奇数四分之一来确定 W和第二层B存在于第二层B的最低能级附近的级别。在第一层W和第二层B之间的每个界面处形成用于急剧变化的能带的增量层，并且具有厚度基本上比第一层W和第二层B薄。结果，当电子在载流子积累层C1至C3中被激发时，电子通过量子波干涉层从n层传播到p- 层作为波，电流迅速流动。

40. 发明公开

EP0617472A2 Semiconductor light emitting/detecting devices 失效
标题翻译：半导体发光/检测装置
公开(公告)号：EP0617472A2
公开(公告)日：1994-09-28
申请号：EP94480014.3
申请日：1994-02-22
申请人： International Business Machines Corporation
发明人： Chapple-Sokol, Jonathan Daniel , Subbanna, Seshadri , Tejwani, Manu Jamnadas
IPC分类号： H01L33/00 , H01L31/0352 , H01L31/028 , H01L31/18 , H01L31/105
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , G02B6/42 , H01L31/0352 , H01L31/105 , H01L33/34 , Y10S148/099 , Y10S438/962
摘要： A semiconductor light emitting/detecting structure has a first doped silicon layer (10), an intrinsic silicon epitaxial layer (15) formed on the first doped silicon layer, at least one quantum dot (20) embedded in a second intrinsic silicon epitaxial layer (25), and a second doped silicon layer (30) formed on the second intrinsic silicon epitaxial layer. Finally, a thin semi-transparent metal contact layer (60) and metal contact pads (65) are formed onto the structure to terminate the device.
摘要翻译：半导体发光/检测结构具有第一掺杂硅层（10），在第一掺杂硅层上形成的本征硅外延层（15），至少一个嵌入第二本征硅外延层（20）中的量子点（20） 25）以及形成在第二本征硅外延层上的第二掺杂硅层（30）。最后，在该结构上形成薄的半透明金属接触层（60）和金属接触垫（65）以终止该器件。

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