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1. 发明公开

EP1132976A3 Optoelectronic material and device application, and method for manufacturing optoelectronic material 审中-公开
标题翻译：照片电子材料，使用相同的和制造方法此设备
公开(公告)号：EP1132976A3
公开(公告)日：2008-04-02
申请号：EP01103836.1
申请日：2001-02-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Yamada, Yuka , Yoshida, Takehito , Suzuki, Nobuyasu , Makino, Toshiharu , Arai, Toshihiro , Kimoto, Kazuhiko
IPC分类号： H01L33/00 , H01L31/028
CPC分类号： H01L31/0284 , H01L31/09 , H01L33/346
摘要： An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

2. 发明公开

EP1172866A2 Light-emitting device and optical integrated device 审中-公开
标题翻译： Lichtemittierende Vorrichtung und optische integrierte Vorrichtung
公开(公告)号：EP1172866A2
公开(公告)日：2002-01-16
申请号：EP01116927.3
申请日：2001-07-11
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yoshida, Takehito , Yamada, Yuka , Suzuki, Nobuyasu , Makino, Toshiharu
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H05B33/22 , G11B7/127 , H01L33/18 , H01S3/0637 , H01S3/169 , H01S5/183 , H01S5/18388 , H01S5/3031
摘要： In fabricating a monochromic and highly coherent light source, no single crystalline bulk semiconductor is used, but two different kinds of transparent substances are alternately stacked over each other to constitute a periodic structure in 1/2 of the intended wavelength. At least one of the two kinds of transparent substances is controllable in electric conductivity, and the structure is such that inside a medium consisting of this kind of transparent substance light-emitting semiconductor particulates are embedded. Accordingly, a light-emitting device has this structure, which makes possible control of the center wavelength of light emission, the width of wavelength distribution and coherence by adjusting the geometrical parameters of the device without having to alter the kind of material use.
摘要翻译：在制造单色和高度相干的光源时，不使用单晶体半导体，但是两种不同种类的透明物质彼此交替堆叠以构成所需波长的1/2的周期性结构。这两种透明物质中的至少一种在导电性方面是可控的，并且结构是这样的，即在由这种透明物质发光半导体微粒组成的介质内部被嵌入。因此，发光器件具有这样的结构，其可以通过调节器件的几何参数而不必改变材料的种类来控制发光的中心波长，波长分布的宽度和相干性。

3. 发明公开

EP1139438A3 Method and apparatus for fabricating quantum dot structures 有权
标题翻译： Verfahren und Apparat zur Herstellung von Quantenpunkt-Strukturen
公开(公告)号：EP1139438A3
公开(公告)日：2004-08-25
申请号：EP01103835.3
申请日：2001-02-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. , DIRECTOR GENERAL OF NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, JAPAN MINISTRY OF ECONOMY, TRADE & IND.
发明人： Suzuki, Nobuyasu , Makino, Toshiharu , Yamada, Yuka , Yoshida, Takehito , Seto, Takafumi , Aya, Nobuhiro
IPC分类号： H01L33/00 , C23C14/28 , C23C14/06 , G01N15/02
CPC分类号： B82Y30/00 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , C23C14/06 , C23C14/228 , C23C14/28 , H01L33/0054 , B22F1/0018 , B22F2202/11
摘要： The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.
摘要翻译：本发明通过有效地制造具有单一粒径和均匀结构的高纯度超细颗粒并将超细颗粒沉积到基底上来制造具有均匀分布在透明介质中的超细颗粒的量子点功能结构结合透明介质。为了这些目的，提供了一种用于制造量子点功能结构的装置。该装置包括：超细颗粒发生室，用于通过在低压稀有气体气氛中用脉冲激光激发半导体靶，然后通过使半导体靶被分离或喷射而产生高纯度超细颗粒通过消融反应并在气体中冷凝和生长; 用于对超细颗粒进行分级的超细颗粒分级室; 沉积室，用于通过同时激发具有准分子激光的透明介质靶或者当高纯度半导体超细颗粒被收集到基板上时交替沉积高纯度半导体超细颗粒和透明介质，并通过将通过消融反应产生的物质收集到基底上; 和载气排气系统。

4. 发明公开

EP1209716A3 Cold cathode forming process and electron emission element, and applied device of the same 审中-公开
标题翻译：冷阴极的制造方法和电子设备中的发光元件和使用该元件的
公开(公告)号：EP1209716A3
公开(公告)日：2003-12-17
申请号：EP01127581.5
申请日：2001-11-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamada, Yuka , Yoshida, Takehito , Suzuki, Nobuyasu , Makino, Toshiharu , Hori, Yoshikazu
IPC分类号： H01J9/02
CPC分类号： H01J9/025
摘要： The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.

5. 发明公开

EP1209716A2 Cold cathode forming process and electron emission element, and applied device of the same 审中-公开
标题翻译：冷阴极的制造方法和电子设备中的发光元件和使用该元件的
公开(公告)号：EP1209716A2
公开(公告)日：2002-05-29
申请号：EP01127581.5
申请日：2001-11-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Yamada, Yuka , Yoshida, Takehito , Suzuki, Nobuyasu , Makino, Toshiharu , Hori, Yoshikazu
IPC分类号： H01J9/02
CPC分类号： H01J9/025
摘要： The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.
摘要翻译：本发明的目的是，以在阴极表面上的精细结构均匀且可重复地实现增加的发射电流值和稳定性与在电子发射元件形成工艺的简单方法。的电子发射元件的电子发射部分所做的是通过激光烧蚀工艺，其中将激光束照射到靶材料和喷射的材料和所发射的手段在自对准的方式形成的电子发射材料的结晶薄膜从靶材料被沉积以形成在面对给靶的基片的薄膜，被用作薄膜电子源。上述结构是有效实现低电子发射阈值和增加的发射电流值和稳定性，并实现与结构中的降低的成本所做的是比传统的结构更简单。

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