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31. 发明公开

EP2608266A3 Semiconductor device having a gate electrode 审中-公开
标题翻译：具有栅电极的半导体器件
公开(公告)号：EP2608266A3
公开(公告)日：2015-12-23
申请号：EP12198059.3
申请日：2012-12-19
申请人： NGK Insulators, Ltd.
发明人： Yokoi, Shoji , Shimizu, Naohiro , Kimura, Masakazu
IPC分类号： H01L29/739 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7392 , H01L29/1066
摘要： A semiconductor device contains a first conductive type semiconductor substrate (12), at least one cathode (20) formed on one surface (12a) of the semiconductor substrate (12), an anode (22) formed on the other surface (12b) of the semiconductor substrate (12), and a gate electrode (24) electrically insulated from the cathode (20), formed on the one surface (12a) of the semiconductor substrate (12) to control current conduction between the cathode (20) and the anode (22). The semiconductor substrate (12) has a thickness (tb) of less than 460 µm.

32. 发明公开

EP2608265A3 Semiconductor device having a gate electrode 审中-公开
标题翻译：具有栅电极的半导体器件
公开(公告)号：EP2608265A3
公开(公告)日：2015-12-23
申请号：EP12198057.7
申请日：2012-12-19
申请人： NGK Insulators, Ltd.
发明人： Yokoi, Shoji , Shimizu, Naohiro , Kimura, Masakazu
IPC分类号： H01L29/739 , H01L29/10 , H01L29/02
CPC分类号： H01L29/74 , H01L29/1066 , H01L29/7392
摘要： A semiconductor device (10) contains a semiconductor substrate (12), a cathode (20), an anode (22), and a gate electrode (24). The semiconductor device (10) has a cathode segment (26) disposed in a portion corresponding to at least the cathode (20), an anode segment (28) disposed in a portion corresponding to the anode (22), a plurality of embedded segments (30) disposed in a portion closer to the cathode segment (26) than to the anode segment (28), a takeoff segment (32) disposed between the gate electrode (24) and the embedded segments (30) to electrically connect the gate electrode (24) to the embedded segments (30), and a channel segment (31) disposed between the adjacent embedded segments (30).

33. 发明公开

EP2412013A4 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE IN WHICH SOURCE AND DRAIN EXTENSIONS OF FIELD-EFFECT TRANSISTOR ARE DEFINED WITH DIFFERENT DOPANTS 审中-公开
标题翻译：配置和制造的半导体结构与基于各种掺杂物的场效应晶体管的源极/漏极延伸的定义
公开(公告)号：EP2412013A4
公开(公告)日：2014-02-26
申请号：EP10756488
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BAHL SANDEEP R , FRENCH WILLIAM D , BULUCEA CONSTANTIN
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/26586 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/8249 , H01L27/0623 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/167 , H01L29/6659 , H01L29/66659

34. 发明公开

EP2608266A2 Semiconductor device having a gate electrode 审中-公开
标题翻译：具有栅电极的半导体器件
公开(公告)号：EP2608266A2
公开(公告)日：2013-06-26
申请号：EP12198059.3
申请日：2012-12-19
申请人： NGK Insulators, Ltd.
发明人： Yokoi, Shoji , Shimizu, Naohiro , Kimura, Masakazu
IPC分类号： H01L29/739 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7392 , H01L29/1066
摘要： A semiconductor device contains a first conductive type semiconductor substrate (12), at least one cathode (20) formed on one surface (12a) of the semiconductor substrate (12), an anode (22) formed on the other surface (12b) of the semiconductor substrate (12), and a gate electrode (24) electrically insulated from the cathode (20), formed on the one surface (12a) of the semiconductor substrate (12) to control current conduction between the cathode (20) and the anode (22). The semiconductor substrate (12) has a thickness (tb) of less than 460 µm.
摘要翻译：一种半导体器件包括：第一导电类型半导体衬底（12）;在半导体衬底（12）的一个表面（12a）上形成的至少一个阴极（20）;在衬底的另一表面（12b）上形成的阳极（22）（12）的一个表面（12a）上形成的半导体衬底（12）和与阴极（20）电绝缘的栅电极（24），以控制阴极（20）和阳极（22）。半导体衬底（12）具有小于460μm的厚度（tb）。

35. 发明公开

EP2116895A3 Laminated structure and image display device 有权
标题翻译：层结构和图像显示装置
公开(公告)号：EP2116895A3
公开(公告)日：2013-06-05
申请号：EP09251176.5
申请日：2009-04-24
申请人： Ricoh Company, Ltd.
发明人： Suzuki, Koei , Tano, Takanori , Onodera, Atsushi
IPC分类号： G02F1/1362 , H01L29/02 , H01L51/52 , H01L51/05
CPC分类号： H01L51/0023 , G02F1/1339 , G02F2202/28 , G02F2202/36 , H01L51/0022 , H01L51/0545 , H01L51/525
摘要： A laminated structure includes a wettability variable layer (12) formed on a substrate (11), including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer (13) formed in one of the high surface energy regions; and an insulating layer (15) formed in such a manner as to cover the conductive layer (13), wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region (16) in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the other one of the high surface energy regions so that an adhesive guard ring region (17) is formed between the wettability variable layer and the insulating layer (15).

36. 发明公开

EP2412016A1 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES 审中-公开
标题翻译：构建和产生具有相似和不同极性配置的源极/漏极延伸，HALO袋和不同构造的介电栅极厚度的场效应晶体管的
公开(公告)号：EP2412016A1
公开(公告)日：2012-02-01
申请号：EP10756493.2
申请日：2010-03-25
申请人： National Semiconductor Corporation
发明人： BULUCEA, Constantin , FRENCH, William D. , ARCHER, Donald M. , YANG, Jeng-Jiun , BAHL, Sandeep R. , PARKER, D. Courtney
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L29/1083 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/088 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/518 , H01L29/66659 , H01L29/7835
摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.

37. 发明公开

EP2412014A1 STRUCTURE AND FABRICATION OF FIELD-EFFECT TRANSISTOR HAVING SOURCE/DRAIN EXTENSION DEFINED BY MULTIPLE LOCAL CONCENTRATION MAXIMA 审中-公开
标题翻译：设计与几种局部浓度最大值的基础上的场效应晶体管的制造DEFINED源/漏延伸
公开(公告)号：EP2412014A1
公开(公告)日：2012-02-01
申请号：EP10756491.6
申请日：2010-03-25
申请人： National Semiconductor Corporation
发明人： FRENCH, William, D. , BULUCEA, Contsantin
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L21/823807 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/28202 , H01L21/823814 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/66537 , H01L29/66659 , H01L29/7835
摘要： An insulated-gate field-effect transistor (100W) has a source (980) and a drain (242) laterally separated by a channel zone (244) of body material (180) of a semiconductor body. A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. A more heavily doped pocket portion (250) of the body material normally extends largely along only the source so that the IGFET is an asymmetric device. The source has a main source portion (980M) and a more lightly doped lateral source extension (980E). The semiconductor dopant which defines the source reaches multiple local concentration maxima in defining the source extension. The procedure involved in defining the source extension with semiconductor dopant that reaches two such local concentration maxima enables source/drain extensions of mutually different characteristics for three insulated-gate field-effect transistors to be defined in only two source/drain-extension doping operations.

38. 发明公开

EP2080217A4 ONE TRANSISTOR DRAM CELL STRUCTURE AND METHOD FOR FORMING 审中-公开
标题翻译： 1-晶体管DRAM单元结构和制造方法
公开(公告)号：EP2080217A4
公开(公告)日：2009-10-21
申请号：EP07841573
申请日：2007-08-30
申请人： FREESCALE SEMICONDUCTOR INC
发明人： BURNETT JAMES D , WINSTEAD BRIAN A
IPC分类号： H01L21/02 , H01L21/336 , H01L29/02
CPC分类号： H01L27/10802 , G11C11/404 , G11C2211/4016 , H01L27/0207 , H01L27/108 , H01L27/10844 , H01L29/7839 , H01L29/7841

39. 发明公开

EP1829111A2 III-NITRIDE MATERIAL STRUCTURES INCLUDING SILICON SUBSTRATES 有权
标题翻译：与硅衬底III族氮化物材料结构
公开(公告)号：EP1829111A2
公开(公告)日：2007-09-05
申请号：EP05852894.4
申请日：2005-12-05
申请人： Nitronex Corporation
发明人： HANSON, Alan, W. , ROBERTS, John, Claassen , PINER, Edwin, L. , RAJAGOPAL, Pradeep
IPC分类号： H01L29/20 , H01L29/778 , H01L29/02 , H01L29/267
CPC分类号： H01L29/267 , H01L29/2003 , H01L29/7787
摘要： III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

40. 发明公开

EP1309447A4 LEAD-FREE ALLOYS WITH IMPROVED WETTING PROPERTIES 审中-公开
标题翻译： BLEIFREIE LEGIERUNGEN MIT VERBESSERTEM VERNETZUNGSVERHALTEN
公开(公告)号：EP1309447A4
公开(公告)日：2005-11-09
申请号：EP01984406
申请日：2001-07-18
申请人： HONEYWELL INT INC
发明人： LI JIANXING , PINTER MICHAEL
IPC分类号： B23K35/26 , B23K35/28 , B32B15/20 , C22C13/00 , C22C18/04 , H01L21/52 , H01L23/488 , H05K3/34 , C22C13/02 , H01L29/02
CPC分类号： H01L23/488 , B32B15/20 , H01L24/29 , H01L2924/01322 , H01L2924/14 , H01L2924/00
摘要： An electronic device has a die that is attached to a metallic contact of a substrate via a coupling layer. The coupling layer comprises an alloy of at least two metals selected from the group consisting of Zn, Al, Mg, and Ga, and further comprises at least one sacrificial chemical element other than Zn, Al, Mg, and Ga at a concentration of 10-1000ppm with an oxygen affinity higher than the alloy. Alternative alloys comprise at least two metals selected from the group consisting of Sn, Ag, Bi, Zn, and Cu, and at least one sacrificial chemical element other than Sn, Ag, Bi, Zn, and Cu. Still further contemplated alloys comprise at least two metals selected from the group consisting of Sn, Ag, Bi, and Sb, and at least one sacrificial chemical element other than Sn, Ag, Bi, and Sb. These Pb free alloys demonstrate improved wetting characteristics and can be used for high reliability soldering process for microelectronics applications.
摘要翻译：电子器件具有通过耦合层附接到衬底的金属接触件的管芯。耦合层包括选自Zn，Al，Mg和Ga中的至少两种金属的合金，并且还包含浓度为10的除Zn，Al，Mg和Ga以外的至少一种牺牲化学元素 -1000ppm，氧合金比合金高。替代合金包含选自Sn，Ag，Bi，Zn和Cu中的至少两种金属，以及除Sn，Ag，Bi，Zn和Cu以外的至少一种牺牲化学元素。进一步考虑的合金包括选自Sn，Ag，Bi和Sb中的至少两种金属，以及除Sn，Ag，Bi和Sb以外的至少一种牺牲化学元素。这些无铅合金表现出改善的润湿特性，可用于微电子应用的高可靠性焊接工艺。

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