发明公开
EP2412016A1 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
审中-公开
基本信息:
- 专利标题： STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
- 专利标题（中）：构建和产生具有相似和不同极性配置的源极/漏极延伸，HALO袋和不同构造的介电栅极厚度的场效应晶体管的
- 申请号：EP10756493.2 申请日：2010-03-25
- 公开(公告)号：EP2412016A1 公开(公告)日：2012-02-01
- 发明人： BULUCEA, Constantin , FRENCH, William D. , ARCHER, Donald M. , YANG, Jeng-Jiun , BAHL, Sandeep R. , PARKER, D. Courtney
- 申请人： National Semiconductor Corporation
- 申请人地址： 2900 Semiconductor Drive Santa Clara, CA 95051-8090 US
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： 2900 Semiconductor Drive Santa Clara, CA 95051-8090 US
- 代理机构： Liesegang, Eva
- 优先权： US382971 20090327
- 国际公布： WO2010110902 20100930
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L29/02 ; H01L29/10
摘要：
A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/70 | .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造 |