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1. 发明公开

EP2412015A4 FABRICATION AND STRUCTURE OF ASYMMETRIC FIELD-EFFECT TRANSISTORS USING L-SHAPED SPACERS 审中-公开
标题翻译：生产和非对称的场效应晶体管的施工具有L形间隔件
公开(公告)号：EP2412015A4
公开(公告)日：2014-02-26
申请号：EP10756492
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： PARKER D COURTNEY , ARCHER DONALD M , BAHL SANDEEP R , BULUCEA CONSTANTIN , FRENCH WILLIAM D , JOHNSON PETER B , YANG JENG-JIUN
IPC分类号： H01L21/70 , H01L21/336 , H01L29/02 , H01L29/10 , H01L29/78
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66659
摘要： A gate electrode (302) of a field-effect transistor (102) is defined above, and vertically separated by a gate dielectric layer (300) from, a channel-zone portion (284) of body material of a semiconductor body. Semiconductor dopant is introduced into the body material to define a more heavily doped pocket portion (290) using the gate electrode as a dopant-blocking shield. A spacer (304T) having a dielectric portion situated along the gate electrode, a dielectric portion situated along the body, and a filler portion (SC) largely occupying the space between the other two spacer portions is provided. Semiconductor dopant is introduced into the body to define a pair of source/drain portions (280M and 282M) using the gate electrode and spacer as a dopant-blocking shield. The filler spacer portion is removed to convert the spacer to an L shape (304). Electrical contacts (310 and 312) are formed respectively to the source/drain portions.

2. 发明公开

EP2412018A4 STRUCTURE AND FABRICATION OF FIELD-EFFECT TRANSISTOR USING EMPTY WELL IN COMBINATION WITH SOURCE/DRAIN EXTENSIONS OR/AND HALO POCKET 有权
标题翻译：建设和生产的场效应晶体管的空空腔与源极/漏极扩展和/或卤素组合BAG
公开(公告)号：EP2412018A4
公开(公告)日：2013-07-31
申请号：EP10756495
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BULUCEA CONSTANTIN , YANG JENG-JIUN , FRENCH WILLIAM D , BAHL SANDEEP R , PARKER D COURTNEY
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/66659 , H01L29/7833
摘要： Insulated-gate field-effect transistors (IGFETs), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET (100, 102, 112, 114, 124, or 126) has a pair of source/drain zones laterally separated by a channel zone of body material of the empty well (180, 182, 192, 194, 204, or 206). A gate electrode overlies a gate dielectric layer above the channel zone. Each source/drain zone (240, 242, 280, 282, 520, 522, 550, 552, 720, 722, 752, or 752) has a main portion (240M, 242M, 280M, 282M, 520M, 522M, 550M, 552M, 720M, 722M, 752M, or 752M) and a more lightly doped lateral extension (240E, 242E, 280E, 282E, 520E, 522E, 550E, 552E, 720E, 722E, 752E, or 752E). Alternatively or additionally, a more heavily doped pocket portion (250 or 290) of the body material extends along one of the source/drain zones. When present, the pocket portion typically causes the IGFET to be an asymmetric device.
摘要翻译：绝缘栅场效应晶体管（IGFET的），对称和非对称，适于半导体制造平台确实提供用于模拟和数字应用，包括混合信号应用的IGFET，利用空阱区域中实现高的性能。半导体阱部掺杂剂的相对小的量是靠近每个空孔的顶部。每一个IGFET（100，102，112，114，124，或126）具有一对源极/漏极区尾盘反弹由空孔（180，182，192，194，204，或206的主体材料的沟道区分开的）。栅极电极重叠的沟道区上方的栅极介电层。每个源极/漏极区（240，242，280，282，520，522，550，552，720，722，752，或752）具有主要部分（240M，242米，280M，282M，520M，522米，550米， 552米，720M，722米，752米，或752米）及较轻度掺杂的横向延伸（240E，242E，280E，282E，520E，522E，550E，552E，720E，722E，752 E，752 E或）。或者或另外，所述主体材料的更重度掺杂袋部（250或290）沿所述源极/漏极区中的一个延伸。当存在时，袋部通常导致IGFET是不对称的装置。

3. 发明公开

EP2412010A4 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING EXTENDED-DRAIN FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：配置和制造工艺的半导体结构与延长漏极的场效应晶体管
公开(公告)号：EP2412010A4
公开(公告)日：2014-03-19
申请号：EP10756485
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BAHL SANDEEP R , BULUCEA CONSTANTIN , FRENCH WILLIAM D
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/66659

4. 发明公开

EP2412013A4 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE IN WHICH SOURCE AND DRAIN EXTENSIONS OF FIELD-EFFECT TRANSISTOR ARE DEFINED WITH DIFFERENT DOPANTS 审中-公开
标题翻译：配置和制造的半导体结构与基于各种掺杂物的场效应晶体管的源极/漏极延伸的定义
公开(公告)号：EP2412013A4
公开(公告)日：2014-02-26
申请号：EP10756488
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BAHL SANDEEP R , FRENCH WILLIAM D , BULUCEA CONSTANTIN
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/26586 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/8249 , H01L27/0623 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/167 , H01L29/6659 , H01L29/66659

5. 发明公开

EP2412016A4 STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES 审中-公开
标题翻译：构建和产生具有相似和不同极性配置的源极/漏极延伸，HALO袋和不同构造的介电栅极厚度的场效应晶体管的
公开(公告)号：EP2412016A4
公开(公告)日：2014-03-19
申请号：EP10756493
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BULUCEA CONSTANTIN , FRENCH WILLIAM D , ARCHER DONALD M , YANG JENG-JIUN , BAHL SANDEEP R , PARKER D COURTNEY
IPC分类号： H01L21/8234 , H01L21/265 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/51 , H01L29/78
CPC分类号： H01L29/1083 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/088 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/518 , H01L29/66659 , H01L29/7835

6. 发明公开

EP2412025A4 CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE HAVING ASYMMETRIC FIELD-EFFECT TRANSISTOR WITH TAILORED POCKET PORTION ALONG SOURCE/DRAIN ZONE 审中-公开
标题翻译：配置和制造与定制的袋部分沿着源/漏区非对称场效应晶体管的半导体结构
公开(公告)号：EP2412025A4
公开(公告)日：2014-03-12
申请号：EP10756483
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： YANG JENG-JUIN , BULUCEA CONSTANTIN , BAHL SANDEEP R
IPC分类号： H01L29/78 , H01L21/336 , H01L29/10
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/665 , H01L29/66659

7. 发明公开

EP2412012A4 STRUCTURE AND FABRICATION OF ASYMMETRIC FIELD-EFFECT TRANSISTOR HAVING ASYMMETRIC CHANNEL ZONE AND DIFFERENTLY CONFIGURED SOURCE/DRAIN EXTENSIONS 审中-公开
标题翻译：设计和不对称场效应晶体管不对称沟道区域的制造及不同配置的源/漏扩展
公开(公告)号：EP2412012A4
公开(公告)日：2014-03-05
申请号：EP10756487
申请日：2010-03-25
申请人： NAT SEMICONDUCTOR CORP
发明人： BULUCEA CONSTANTIN , FRENCH WILLIAM D , BAHL SANDEEP R , YANG JENG-JIUN , PARKER D COURTNEY , JOHNSON PETER B , ARCHER DONALD M
IPC分类号： H01L21/70 , H01L29/02 , H01L29/10
CPC分类号： H01L29/7835 , H01L21/26586 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/8249 , H01L27/0623 , H01L27/0826 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/167 , H01L29/66659
摘要： An asymmetric insulated-gate field-effect transistor (100) has a source (240) and a drain (242) laterally separated by a channel zone (244) of body material (180) of a semiconductor body. A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. A more heavily doped pocket portion (250) of the body material extends largely along only the source. Each of the source and drain has a main portion (240M or 242M) and a more lightly doped lateral extension (240E or 242E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.

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