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31. 发明公开

EP1577425A4 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：具有生产低性能和工艺n型半导体DIAMOND
公开(公告)号：EP1577425A4
公开(公告)日：2007-02-28
申请号：EP03781010
申请日：2003-12-22
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAMBA AKIHIKO , IMAI TAKAHIRO , TAKEUCHI HISAO
IPC分类号： C30B29/04 , C23C16/27 , C23C16/448 , C23C16/48 , C30B25/10 , H01L21/205 , H01L21/22
CPC分类号： C23C16/448 , C23C16/27 , C23C16/278 , C23C16/482 , C30B25/105 , C30B29/04 , H01L21/02376 , H01L21/02527 , H01L21/02576 , H01L21/0262 , H01L21/02634
摘要： Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 10 17 cm -3 or more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

32. 发明公开

EP1670015A4 sp sp 3 /sp BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF 有权
标题翻译： SP SP 3 /斯普·邦德-氮化硼薄膜-SELF WITH好处发射电场电子，PROCESS FOR THEREOF AND USE PRODUCING的特征的SHOW形成最终的表面形状
公开(公告)号：EP1670015A4
公开(公告)日：2007-02-21
申请号：EP04772724
申请日：2004-08-27
申请人： NAT INST FOR MATERIALS SCIENCE
发明人： KOMATSU SHOJIRO , MORIYOSHI YUSUKE , SHIMIZU YOSHIKI , OKADA KATSUYUKI
IPC分类号： C01B21/064 , H01J1/304 , C23C16/34 , C23C16/38 , C23C16/48 , H01J9/02
CPC分类号： H01J1/304 , C23C16/342 , C23C16/482 , H01J9/025 , H01J2201/30446 , Y10T428/24355
摘要： A method for preparing an sp bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.

33. 发明公开

EP1157598A4 METHOD AND APPARATUS FOR DEPOSITION OF DIAMOND-LIKE CARBON COATINGS FROM A HALL-CURRENT ION SOURCE 有权
标题翻译：方法和装置用于涂料类金刚石碳由霍尔电流离子源生产
公开(公告)号：EP1157598A4
公开(公告)日：2006-09-27
申请号：EP00919266
申请日：2000-02-02
申请人： MORGAN ADVANCED CERAMICS INC
发明人： MAHONEY LEONARD JOSEPH , BROWN DAVID WARD , PETRMICHL RUDOLPH HUGO
IPC分类号： H05H1/24 , C23C14/06 , C23C14/32 , C23C14/48 , C23C16/26 , C23C16/40 , C23C16/48 , G11B5/84 , H01J37/32 , H01L21/203 , H01L21/265 , H01L21/302 , H05H1/46 , H01J7/24
CPC分类号： C23C16/401 , C23C16/26 , C23C16/486 , G11B5/8408 , Y10S427/103 , Y10S427/104
摘要： A direct ion beam deposition method and apparatus are disclosed in which a substrate (120) is disposed within a vacuum chamber (110), a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source (100) is deposited on the substrate, the Hall-Current ion source is operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively, and has an anode discharge region (70) which is insulatively sealed to prevent discharge from migrating into the interior of the ion source.

34. 发明授权

EP1001050B1 Verfahren zur Innenbeschichtung von Kapillaren und deren Verwendung 有权
标题翻译：一种用于毛细管的内涂层，以及它们的使用过程中
公开(公告)号：EP1001050B1
公开(公告)日：2005-07-27
申请号：EP99120361.3
申请日：1999-10-13
申请人： Forschungszentrum Karlsruhe GmbH
发明人： Heck, Jürgen, Prof. Dr. , Kneip, Stefan, Dr. , Knöchel, Arndt, Prof. Dr. , Haller, Martin, Dr. , Moritz, Florian
IPC分类号： C23C16/44 , C23C16/18 , C23C16/40 , C23C16/34 , C23C16/46 , C23C16/48 , C23C16/50 , G21K1/06 , C23C16/04 , C23C16/52
CPC分类号： C23C16/18 , C23C16/045 , G21K1/06 , G21K2201/067

35. 发明授权

EP1135219B1 VERFAHREN ZUR HERSTELLUNG HAFTFESTER OBERFLÄCHENBESCHICHTUNGEN 有权
标题翻译：用于生产粘合剂固态表面涂层
公开(公告)号：EP1135219B1
公开(公告)日：2004-01-28
申请号：EP99953888.7
申请日：1999-10-20
申请人： Ciba Specialty Chemicals Holding Inc.
发明人： BAUER, Michael , KÖHLER, Manfred , KUNZ, Martin , MISEV, Ljubomir
IPC分类号： B05D3/00 , B05D3/14 , B05D3/06 , C23C16/48
CPC分类号： B05D3/062 , B05D3/10 , B05D3/142 , C23C14/024

36. 发明公开

EP1209251A3 Temperature control system for wafer 失效
标题翻译：晶圆温度控制系统
公开(公告)号：EP1209251A3
公开(公告)日：2002-06-26
申请号：EP01129575.5
申请日：1998-01-23
申请人： ASM America, Inc.
发明人： Foster, Derrick W. , Vyne, Robert M. , Wengert, John F. , Van der Jeugd, Cornelius A. , Jacobs, Loren R. , Van Bilsen, Frank B.M. , Goodmann, Matthew , Hartmann, Glenn , Layton, Jason M.
IPC分类号： C23C16/458 , C23C16/48 , H01L21/00 , C30B31/12 , C30B31/18 , H01L23/34 , C23C16/52
CPC分类号： C23C16/4586 , H01L21/68735 , H01L21/6875 , H01L21/68792 , H01L2924/0002 , H01L2924/00
摘要： Apparatus for processing a substrate (44) comprising; a susceptor (382) for supporting a substrate (44); an upper heat source (351) spaced above the susceptor; a lower heat source (352) spaced below the susceptor; and a controller (390) providing power to said heat sources at a selected ratio between said sources, said controller being configured to vary said ratio during a high temperature processing cycle of a substrate to thereby vary the ratio of the heat provided by the heat sources during the cycle. A method of maintaining uniform temperature of a semiconductor wafer during high temperature processing is also disclosed.
摘要翻译：用于处理衬底（44）的设备，包括：用于支撑基板（44）的基座（382）; 在感受器上方间隔开的上热源（351）在感受器下方间隔开的下热源（352）以及控制器（390），以所述源之间的选定比率向所述热源提供功率，所述控制器被配置为在衬底的高温处理循环期间改变所述比率，从而改变由热源提供的热量的比率在周期中。还公开了一种在高温处理期间保持半导体晶片的均匀温度的方法。

37. 发明公开

EP0840359A3 Thermal processor for semiconductor wafers 失效
标题翻译：植物用于半导体晶片的热处理
公开(公告)号：EP0840359A3
公开(公告)日：2002-04-03
申请号：EP97308821.4
申请日：1997-11-04
申请人： GENERAL ELECTRIC COMPANY
发明人： Ghezzo, Mario , Bergman, Rolf Sverre , Page, Timothy Dietrich , Vakil, Himanshu Bachubhai , Gorczyca, Thomas Bert , Huey, Charles Samuel , Silverstein, Seth David
IPC分类号： H01L21/00 , C23C16/48 , C30B25/10
CPC分类号： H01L21/67115
摘要： A thermal processor for at least one semiconductor wafer includes a reactor chamber (12) having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating (16) including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source (18) provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.

38. 发明公开

EP1143036A3 Apparatus and method for controlling the temperature of a wall of a reaction chamber 失效
标题翻译：用于控制反应室壁的温度的设备和方法
公开(公告)号：EP1143036A3
公开(公告)日：2001-11-28
申请号：EP01109787.0
申请日：1996-05-21
申请人： Applied Materials, Inc.
发明人： Carlson, David K. , Riley, Norma , Anderson, Roger N.
IPC分类号： C23C16/44 , C23C16/48 , C23C16/52 , C30B25/10 , H01L21/00
CPC分类号： H01L21/67248 , C23C16/4411 , C23C16/481 , C23C16/52 , C30B25/10 , C30B25/105 , H01L21/67098 , H01L21/67115 , H01L21/67242
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber (102) within a workpiece processing system (100) such that the temperature of a wall of the reaction chamber (102) is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber (102), e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device (132) to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device (138) located within an inlet conduit (120) that supplies air to a shroud for channeling the air past the reaction chamber (102). The shroud forms a portion of a housing (118) which supports and encloses the reaction chamber (102).
摘要翻译：一种用于控制工件处理系统（100）内的反应室（102）附近的冷却剂（空气）流动的装置和伴随方法，使得反应室（102）的壁的温度保持在预定的目标温度。目标温度通常是优化在腔室（102）内同时完成的过程的温度，例如利用沉积过程期间的一个温度和清洁过程期间的不同温度。该设备包含温度测量装置（132）以测量室壁的温度。测得的温度与预定的目标温度进行比较。闭环系统控制靠近室壁的气流，使得测得的温度变得基本上等于目标温度。空气流量控制由位于输入管道（120）内的空气流量控制装置（138）提供，空气流量控制装置（138）将空气供应给护罩以引导空气通过反应室（102）。护罩形成支撑和封闭反应室（102）的壳体（118）的一部分。

39. 发明公开

EP1097470A1 INFRA-RED TRANSPARENT THERMAL REACTOR COVER MEMBER 有权
标题翻译：红外线半透明罩元在热反应器
公开(公告)号：EP1097470A1
公开(公告)日：2001-05-09
申请号：EP99935833.6
申请日：1999-07-21
申请人： Applied Materials, Inc.
发明人： ANDERSON, Roger, N.
IPC分类号： H01L21/00 , C23C16/48
CPC分类号： H01L21/67115 , C23C16/481
摘要： A cover member for a semiconductor processing thermal reactor, comprising a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.

40. 发明公开

EP1069610A2 Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus 失效
$Refractory metal deposition process for low contact resistivity to silicon and corresponding apparatus$
标题翻译：一种用于与低接触电阻的难熔金属的沉积，和相应的装置的过程
公开(公告)号：EP1069610A2
公开(公告)日：2001-01-17
申请号：EP00203543.4
申请日：1990-12-28
申请人： LSI LOGIC CORPORATION
发明人： Hansen, Keith J.
IPC分类号： H01L21/768 , H01L21/3205 , C23C16/02 , C23C16/08 , C23C16/48 , C23C16/52 , C23C14/02 , C23C16/455 , C23C16/505 , H01J37/32
CPC分类号： C23C16/45523 , C23C16/04 , C23C16/08 , C23C16/4402 , C23C16/4405 , C23C16/455 , C23C16/45561 , H01L21/28518 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L21/76876 , H01L21/76877 , H01L21/76879 , Y10S156/916 , Y10T137/7761
摘要： In a method of forming a barrier layer for electrically connecting a conductive interconnect layer to one or more exposed silicon regions (2,3) on a wafer (1), an optically opaque layer of refractory metal (120) is formed on said exposed silicon regions, the exposed silicon regions including an N-type region and a P-type region prior to a temperature of the regions exceeding approximately 100°C. The wafer is heated in a CVD chamber at a substantially constant deposition temperature substantially above 100°C after forming the opaque layer while supplying an amount of reducing gas and an amount of gas containing atoms of a refractory metal for a time to form a barrier layer (132) comprising said refractory metal having a desired thickness. The wafer is then annealed to form a silicide at an interface of the refractory metal and the silicon regions.

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