基本信息:
- 专利标题： Thermal processor for semiconductor wafers
- 专利标题（中）：植物用于半导体晶片的热处理
- 申请号：EP97308821.4 申请日：1997-11-04
- 公开(公告)号：EP0840359A3 公开(公告)日：2002-04-03
- 发明人： Ghezzo, Mario , Bergman, Rolf Sverre , Page, Timothy Dietrich , Vakil, Himanshu Bachubhai , Gorczyca, Thomas Bert , Huey, Charles Samuel , Silverstein, Seth David
- 申请人： GENERAL ELECTRIC COMPANY
- 申请人地址： 1 River Road Schenectady, NY 12345 US
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： 1 River Road Schenectady, NY 12345 US
- 代理机构： Goode, Ian Roy
- 优先权： US743587 19961104
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23C16/48 ; C30B25/10
摘要：
A thermal processor for at least one semiconductor wafer includes a reactor chamber (12) having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating (16) including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source (18) provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.
公开/授权文献:
- EP0840359A2 Thermal processor for semiconductor wafers 公开/授权日：1998-05-06
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |