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31. 发明公开

EP1711964A1 HALBLEITER-STRUKTUR 审中-公开
标题翻译：半导体结构
公开(公告)号：EP1711964A1
公开(公告)日：2006-10-18
申请号：EP05714886.8
申请日：2005-01-21
申请人： Forschungszentrum Jülich GmbH
发明人： INDLEKOFER, Michael , LÜTH, Hans , FÖRSTER, Arnold
IPC分类号： H01L29/12 , H01L29/88 , H01L29/772 , H01L21/335 , H01L33/00 , H01S5/34
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L29/66469 , H01L29/775 , H01L29/882 , H01L33/06 , H01L33/24
摘要： The invention concerns a semiconductor structure comprising at least one first material region and a second material region, whereby the second material region epitaxially surrounds the first material region and forms a boundary surface. The structure is characterized in that Fermi level pinning is present on the non-epitaxial boundary surface of the second material region located opposite the boundary surface of both material regions, and the first material region forms a quantum well for free charge carriers. This advantageously results in enabling a controllable charge carrier concentration to be set in the quantum well.

32. 发明授权

EP0759640B1 Semiconductor superlattice oscillator and methods of manufacturing and operating the same 失效
标题翻译：半导体超晶格振荡器和制作和操作方法
公开(公告)号：EP0759640B1
公开(公告)日：2003-06-11
申请号：EP96113185.1
申请日：1996-08-16
申请人： Paul-Drude-Institut für Festkörperelektronik
发明人： Kastrup, Jörg , Grahn, Holger Theodor
IPC分类号： H01L29/15 , H01L29/88
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/155 , H01L29/882 , H03B7/14

33. 发明授权

EP0708487B1 Memory device 失效
公开(公告)号：EP0708487B1
公开(公告)日：2001-08-29
申请号：EP95304591.1
申请日：1995-06-29
申请人： HITACHI EUROPE LIMITED
发明人： Alphenaar, Bruce , Durrani, Zahid Ali Khan
IPC分类号： H01L29/88 , H01L27/102
CPC分类号： B82Y10/00 , B82Y30/00 , G11C11/56 , G11C2211/5614 , H01L27/1021 , H01L29/882

34. 发明公开

EP0709895A2 A quantum effect device 失效
标题翻译： Quanteneffekt-Bauelement
公开(公告)号：EP0709895A2
公开(公告)日：1996-05-01
申请号：EP95119854.8
申请日：1993-07-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Okada, Kenji , Morimoto, Kiyoshi , Udagawa, Masaharu , Yuki, Koichiro , Niwa, Masaaki , Hirai, Yoshihiko , Yasui, Juro
IPC分类号： H01L29/73 , H01L29/76
CPC分类号： B82Y10/00 , B82Y30/00 , H01L29/1037 , H01L29/66931 , H01L29/772 , H01L29/882 , Y10S438/911 , Y10S438/962
摘要： A quantum effect device including a plate-like conductor part having a necking portion is disclosed. Such a quantum device comprises: a conductor substrate having a main face; and a plate-like conductor part having two side faces, said side faces being perpendicular to said main face of said conductor substrate, said side faces being parallel to each other, wherein said plate-like conductor part includes a necking portion having a width smaller than a distance between said two side faces, and energy states of electrons in said necking portion are quantized in a direction perpendicular to said two side faces.
摘要翻译：公开了一种包括具有颈缩部分的板状导体部分的量子效应器件。这种量子器件包括：具有主面的导体衬底; 以及具有两个侧面的板状导体部，所述侧面与所述导体基板的所述主面垂直，所述侧面相互平行，其特征在于，所述板状导体部包括宽度较小的颈缩部比所述两个侧面之间的距离，并且所述颈缩部分中的电子的能量状态在垂直于所述两个侧面的方向上量化。

35. 发明公开

EP0708487A1 Memory device 失效
标题翻译：存储设备
公开(公告)号：EP0708487A1
公开(公告)日：1996-04-24
申请号：EP95304591.1
申请日：1995-06-29
申请人： HITACHI EUROPE LIMITED
发明人： Alphenaar, Bruce , Durrani, Zahid Ali Khan
IPC分类号： H01L29/88 , H01L27/102
CPC分类号： B82Y10/00 , B82Y30/00 , G11C11/56 , G11C2211/5614 , H01L27/1021 , H01L29/882
摘要： A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.
摘要翻译：存储器件由通过选择性蚀刻形成的柱状谐振隧道二极管阵列组成。每个柱包括设置在端子区域（T1，T2）和障碍之间的导电区域（CR1）之间的第一和第二屏障（B1，B2）。柱的直径通常约为20-50nm，并且足够小，使得器件在端部区域之间没有施加电压时呈现第一和第二相对较高和较低的稳定电阻状态。该器件可以在室温下用作非易失性存储器。

36. 发明授权

EP0274511B1 SINGLE QUANTUM WELL RESONANT TUNNELING SEMICONDUCTOR DEVICES 失效
标题翻译：半导体器件共振隧穿在一个简单的量子位能POT。
公开(公告)号：EP0274511B1
公开(公告)日：1994-12-28
申请号：EP87904746.2
申请日：1987-05-26
申请人： Hughes Aircraft Company
发明人： SCHULMAN, Joel, N.
IPC分类号： H01L29/88 , H01L29/205 , H01L29/76
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/7606 , H01L29/882
摘要： A single quantum well semiconductor device (10), wherein a central quantum well layer (12) is disposed between a pair of barrier layers (14) to form a quantum barrier (15), the barrier layers (14) having a composition such that a resonance energy level (18) is created in the quantum well layer (12), and having a thickness sufficiently small, so that electrons can tunnel through the quantum barrier (15) under an applied voltage. The quantum well layer (12) and barrier layers (14) are disposed between two electron injection layers (16a, 16b) having compositions selected so that the conduction band minimum energy (20) for electrons in the injection layers is about that of, but less than, the resonance energy level (18) of the quantum well (12). Electrons pass through the quantum barrier (15) by tunneling, upon application of a small voltage to the two main terminals of the device sufficient to raise electrons near the conduction band minimum energy (20) of the injection layer (16a) to the resonance energy level (18) of the quantum well. The internal voltage (Va) necessary for tunneling is reduced, as compared with conventional double barrier tunnel diodes. A higher tunneling current and a higher peak-to-valley current ratio over the negative resistance range are obtained, and the DC operating point voltage is reduced. The semiconductor device (10) can be a two-terminal device or a three-terminal device wherein a terminal for applying a voltage to the quantum barrier (15) is provided.

37. 发明公开

EP0361379A3 Precision voltage reference 有权
标题翻译：精密电压参考
公开(公告)号：EP0361379A3
公开(公告)日：1991-01-23
申请号：EP89117720.6
申请日：1989-09-26
申请人： HONEYWELL INC.
发明人： Berndt, Dale F. , Peczalski, Andrezej
IPC分类号： H01L29/88 , H01L29/20 , G05F3/16
CPC分类号： B82Y10/00 , G05F3/16 , H01L29/882 , Y10S257/906
摘要： A precision voltage reference includes at least one superlattice resonant tunneling diode (10) and support electronics (44). The precision voltage reference is stable as to temperature and radiation.

38. 发明公开

EP0316139A3 Resonant tunelling barrier structure device 失效
标题翻译：谐振式障碍物结构装置
公开(公告)号：EP0316139A3
公开(公告)日：1990-01-10
申请号：EP88310498.6
申请日：1988-11-08
申请人： FUJITSU LIMITED
发明人： Muto, Shunichi , Inata, Tsugo , Takeuchi, Atsushi , Sugiyama, Yoshihiro
IPC分类号： H01L29/205 , H01L29/201 , H01L29/88
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/882
摘要： A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, comprises an InP substrate (1) and a RTB structure. THe RTB structure consists of a first doped layer (5) of InP or In 0.53 Ga 0 .47 As, a first barrier layer (2) of Al x Ga 1-x As y Sb 1-y (0 ≦ x ≦ 1, y = 0.51 + 0.05x), a well layer (4) of InP or In z Ga 1-z As (0.52 ≦ z ≦ 0.54), a second barrier layer (3) of the AlGaAsSb, and as econd doped layer (6) of InP or In z Ga 1-z As. All of the layers are lattice-matched to InP.

39. 发明公开

EP0282407A3 Semiconductor device utilizing multiquantum wells 失效
标题翻译：利用多晶硅的半导体器件
公开(公告)号：EP0282407A3
公开(公告)日：1989-08-23
申请号：EP88400541.4
申请日：1988-03-08
申请人： FUJITSU LIMITED
发明人： Oshima, Toshio , Futatsugi, Toshiro
IPC分类号： H01L29/205 , H01L29/203 , H01L29/88 , H01L29/76 , H01S3/19 , H01L31/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L29/7606 , H01L29/882 , H01L31/035236 , H01S5/0422 , H01S5/34 , H01S5/3408 , H01S5/3418 , H01S5/3425
摘要： A semiconductor device comprises a first barrier layer (3), a quantum well layer (4) formed on the first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order, a second barrier layer (3) formed on said quantum well layer, and first and second contact layers (7, 6). The first barrier layer, the quantum well layer and the second barrier layer make up a layer sequence which is repeated a predetermined number of times, and the first contact layer connects to the first barrier layer in a first of the predetermined number of layer sequences, while the second contact layer connects to the second barrier layer in a last of the predetermined number of layer sequences.

40. 发明公开

EP0256759A2 Resonant tunneling semiconductor device 失效
标题翻译： Halbleiteranordnung mit resonanceem Tunneleffekt。
公开(公告)号：EP0256759A2
公开(公告)日：1988-02-24
申请号：EP87306907.4
申请日：1987-08-04
申请人： FUJITSU LIMITED
发明人： Inata, Tsuguo , Fujii, Toshi , Muto, Shunichi
IPC分类号： H01L29/88 , H01L29/205 , H01L29/76 , H01L29/72 , H01L29/201
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/7376 , H01L29/7606 , H01L29/882
摘要： A resonant tunneling semiconductor device having a large peak-to-valley current density J p /J v ratio comprises an InP substrate (11), a first contact compound semiconductor (12) lattice-matched to InP, a first barrier layer (13) of (In 0.52 A1 0.48 As) z
(In 0.53 Ga 0.47 As) 1-z , (0 1-y Ga y As, (0.48 ≧ y ≧ 0.46), a second barrier layer (15) of (In 0.52 A1 0.48 As) z (In 0.53 Ga 0.47 As) 1-z , (0 z
Instead of the quantum-well structure, it is possible to adopt the quantum-well structure of strained-layers comprising the first and second barrier layers which are of In 1-x Al x As (0.48
摘要翻译：具有大的峰 - 谷电流密度J p / J v比的共振隧穿半导体器件包括InP衬底（11），与InP晶格匹配的第一接触化合物半导体（12），第一阻挡层（13）（In 0.53Al 0.48As）z（In 0.53Ga 0.47As）1-z，（0 ），In 1-yGa yAs的阱层（14），（0.48> （In 0.52Al 0.48As）z（In 0.53Ga 0.47As）1-z，（0 u> 1）的第一和第二阻挡层的应变层的量子阱结构，并且具有0.5至10.0nm的厚度。

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