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31. 发明公开

EP0931851A1 Verfahren zur Erzielung funktioneller Metall-, Keramik- oder Keramik/Metall-Schichten auf der Innenwand von Hohlkörpern 有权
标题翻译：一种用于在空心体的内壁实现功能性金属，陶瓷或陶瓷/金属层的方法
公开(公告)号：EP0931851A1
公开(公告)日：1999-07-28
申请号：EP99100868.1
申请日：1999-01-19
申请人： DaimlerChrysler AG
发明人： Beyer, Steffen , Dietsch, Reiner , Mai, Hermann , Pompe, Wolfgang
IPC分类号： C23C14/04 , C23C14/28 , H01J37/32
CPC分类号： H01J37/32321 , C23C14/046 , C23C14/28
摘要： Beschrieben wird ein Verfahren zur Erzielung funktioneller Metall-, Keramik- oder Keramik/Metall-Schichten auf der Innenwand von Hohlkörpern unter Verwendung des Verfahrens der Pulsed Laser Deposition (PLD), wobei in Kombination mit einer Laser-Dünnschichtbehandlung Energie- und Materiestromdichten als Funktion des Abstandes des Kondensationsbereiches von der Substratoberfläche vorgegeben werden, wobei Laserimpulse mit Energien von 1 - 2 Joule bei Wiederholungs-impulsraten von 10 Hz bis 50 Hz Verwendung finden und zur direkten Innenbeschichtung je nach gewählter Impulslänge und Restgasatmosphäre in der Vakuum-Abscheidekammer durch den Plasmastrom ein gewünschtes trypisches Schichtgefüge - glasartig-amorph, kolumnar oder polykristallin - erzeugt wird und sich das Schicht- oder Targetmaterial sowohl aus leitenden als auch aus isolierenden Substanzen zusammensetzt.
摘要翻译：脉冲激光沉积包括，结合激光薄层处理，指定能量和材料流密度从基板表面冷凝区域的距离的函数; 施加1-2焦耳的激光脉冲和10至50赫兹; 通过在真空室中沉淀的脉冲长度和残余气体环境中的适当选择的等离子体流（13）产生和层结构。涂层或目标材料（10）besteht两个导电和绝缘材料的。

32. 发明公开

EP0735577A3 Deposition process and apparatus therefor 失效
标题翻译： Abscheidungsverfahren und Einrichtungdafür
公开(公告)号：EP0735577A3
公开(公告)日：1997-04-02
申请号：EP95119736.7
申请日：1995-12-14
申请人： Applied Materials, Inc.
发明人： Xu, Zheng , Kieu, Hoa
IPC分类号： H01L21/285 , C23C14/34
CPC分类号： C23C14/345 , C23C14/046 , C23C14/358 , H01J37/3447 , H01J2237/3327 , H01L21/76882
摘要： A method and apparatus for depositing material to conformally cover or fill holes within the surface of a semiconductor substrate (18). The preferred method includes the steps of coherently depositing a first thickness of the material onto the surface of the substrate (18); reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material; after the first thickness of the material is deposited onto the surface of the substrate (18); and while depositing the second thickness of the material onto the surface of the substrate (18), heating the substrate (18) to enhance reflow of the material being deposited.
摘要翻译：一种用于沉积材料以在半导体衬底（18）的表面内保形地覆盖或填充孔的材料的方法和装置。优选的方法包括将材料的第一厚度相干沉积到衬底（18）的表面上的步骤; 反向溅射沉积的材料，以便用沉积的材料涂覆接触孔的侧壁; 在材料的第一厚度沉积到衬底（18）的表面上之后; 并且同时将所述材料的第二厚度沉积到所述衬底（18）的表面上，加热所述衬底（18）以增强所沉积材料的回流。

33. 发明公开

EP0721438A1 PROCEDE DE FABRICATION D'UN MATERIAU COMPOSITE A INTERPHASE LAMELLAIRE ENTRE FIBRES DE RENFORT ET MATRICE, ET MATERIAU TEL QU'OBTENU PAR LE PROCEDE 失效
标题翻译：用于生产复合材料具有叶片LIKE相之间增强纤维和基体，并通过这种方法方法GOT材料
公开(公告)号：EP0721438A1
公开(公告)日：1996-07-17
申请号：EP94927699.0
申请日：1994-09-20
申请人： SOCIETE EUROPEENNE DE PROPULSION
发明人： GOUJARD, Stéphane , DUPEL, Pascal , PAILLER, René , HEURTEVENT, Fabrice
IPC分类号： C04B35 , C23C14
CPC分类号： C23C14/046 , C04B35/565 , C04B35/806 , Y02T50/67 , Y10T428/2918 , Y10T428/292 , Y10T442/20
摘要： The interphase is formed by nanometric scale sequencing of various constituents, of which a first has an intrinsic lamellar microtexture and at least a second can protect the first against oxidation. Several basic layers of a first lamellar microtexture constituent selected for example from pyrocarbon, boron nitride and BC3 are formed alternately with one or more layers of a second constituent having an oxidation protection function, selected for example from SiC, Si3N4, SiB4, SiB6 or a codeposit of the elements Si, B, C. The basic interphase layers, the thickness of which is preferably less than 10 nanometres, are formed by pulsed chemical vapour deposition or infiltration.

34. 发明公开

EP0693137A1 HOLLOW CONTAINERS WITH INERT OR IMPERMEABLE INNER SURFACE THROUGH PLASMA-ASSISTED DEPOSITION OF A PRIMARILY INORGANIC SUBSTANCE 失效
标题翻译：有由BY INSBESONDEREN无机物PLASMANUTERSTÜTZTER涂覆用的惰性或POET INNER SPACE中空容器
公开(公告)号：EP0693137A1
公开(公告)日：1996-01-24
申请号：EP95910216.0
申请日：1995-02-09
申请人： THE COCA-COLA COMPANY
发明人： PLESTER, George , EHRICH, Horst
IPC分类号： B65D1 , C23C14 , C23C16
CPC分类号： C23C14/0021 , C23C14/046 , C23C14/32
摘要： A plasma assisted deposition of a very thin inner surface coating inside a plastic or metal container is achieved using insoluble, inert, inorganic substances such as silica, or insoluble metal oxides, or by using mixtures of substances, for example of metals, metal oxides, metal salts and carbon and/or organic radicals, so as to form a flexible structure or lattice, or by using different layers of such structures. It involves locating the container in an evacuated enclosure, placing a vaporizer containing inert inorganic material of a predetermined constituency inside the container, generating a vapor of said material, forming a plasma of said vapor, and depositing a relatively thin coating of said material over a predetermined area of an inside surface of said container, whereby the high temperature of the particles of said coating penetrate said surface due to their heat energy while causing no overall rise in surface temperature because of the low mass flow.

35. 发明公开

EP0682125A1 Controlling material sputtered from a target 失效
标题翻译： Kontrolle eines材料，焊接von einem目标zerstäubtwird。
公开(公告)号：EP0682125A1
公开(公告)日：1995-11-15
申请号：EP95303076.4
申请日：1995-05-05
申请人： APPLIED MATERIALS, INC.
发明人： Parker, Norman William
IPC分类号： C23C14/34 , C23C14/04 , H01J37/32
CPC分类号： H01J37/3447 , C23C14/046 , C23C14/34 , H01J37/34
摘要： The disclosure relates to a sputtering apparatus including a target that is sputtered to deposit a material layer on a substrate. A filtering member (18) which may be in the form of a grid of upper and lower sets of bars staggered with respect to each other is disposed intermediate the substrate (14) and target (12) to prevent target material particles travelling perpendicular to the substrate from contacting the substrate. This filtering reduces the rate of deposition occurring on the surface of the substrate with respect to that occurring on the walls of any holes therein, and thereby increases the deposition layer forming on the wall of the hole with respect to that forming on the surface of the substrate and base of the hole. Other forms of filtering member are also disclosed including upper and lower perforated plates and upper and lower sets of concentric rings.
摘要翻译：本公开涉及一种溅射装置，其包括溅射以在基板上沉积材料层的靶。布置在基板（14）和目标（12）之间的相对于彼此交错的上下组的网格形式的过滤构件（18），以防止目标材料颗粒垂直于基底与基底接触。这种过滤降低了衬底表面上相对于其中任何孔壁上发生的沉积速率，从而增加了在孔的壁上形成的沉积层相对于在表面上形成的沉积层基底和孔底。还公开了其他形式的过滤构件，其包括上和下多孔板以及上下组的同心环。

36. 发明公开

EP0529321A1 Metallic material deposition method for integrated circuit manufacturing 失效
标题翻译：一种用于金属材料的沉积用于生产集成电路的工艺。
公开(公告)号：EP0529321A1
公开(公告)日：1993-03-03
申请号：EP92112768.4
申请日：1992-07-27
申请人： APPLIED MATERIALS INC.
发明人： Talieh, Homoyoun , Tepman, Avi , Kieu, Hoa Thi , Wang, Chien-Rhone (Jean Wang)
IPC分类号： H01L21/90 , C23C14/34
CPC分类号： C23C14/046 , C23C14/34 , H01L21/2855 , H01L21/321 , H01L21/76877
摘要： The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate (32) is placed between the sputtering target (18) and the substrate (12), such that a collimated stream of sputtered material is deposited upon the substrate (12). The collimated stream provides a seed layer (40) which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate (12). The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer (40), whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved.
摘要翻译：本发明的改进的材料沉积工艺利用随之而来的是第二，高温/高功率沉积步骤的第一，低温沉积步骤。在第一沉积步骤a准直板（32）的溅射靶（18）和基片（12）之间放置，谋求确实溅射材料的准直流在所述基板（12）被沉积。准直流提供的籽晶层（40），在通过部分地填充所述孔和槽的基片（12）的表面消除空隙，这有助于。第二沉积步骤中进行作为高温溅射沉积。在高温下被溅射材料连接和与所述籽晶层（40），由此所述孔和槽更容易地填充无空隙和改善的平坦化层，实现流动。

37. 发明授权

EP0298157B1 Method and device for coating cavities of objects 失效
标题翻译：用于涂覆物体的方法和装置
公开(公告)号：EP0298157B1
公开(公告)日：1992-09-02
申请号：EP87201244.8
申请日：1987-06-29
申请人： HAUZER HOLDING B.V.
发明人： Wesemeyer, Harald , Veltrop, Hans
IPC分类号： C23C14/32
CPC分类号： C23C14/325 , C23C14/046

38. 发明公开

EP0158972A2 Verfahren und Vorrichtung zur Materialverdampfung in einer Unterdruckkammer durch Bogenentladung 失效
标题翻译： Verfahren und Vorrichtung zur Materialverdampfung在einer Unterdruckkammer durch Bogenentladung。
公开(公告)号：EP0158972A2
公开(公告)日：1985-10-23
申请号：EP85104363.8
申请日：1985-04-11
申请人： Plasco Dr. Ehrich Plasma-Coating GmbH
发明人： Ehrich, Horst, Dipl.-Phys., Dr.
IPC分类号： C23C14/30 , H01J37/305
CPC分类号： H01J37/32055 , C23C14/046 , C23C14/325 , H01J37/3053
摘要： Zum Verdampfen von Material im Vakuum oder bei geringem Gasdruck durch Beschuß mit Elektronen aus einer Vakuumbogenentladung unter Verwendung einer Kathode und Anode wird vorgeschlagen, daß

a) die Elektronen zum Erhalt einer selbständigen Entladung in den Kathodenflecken einer Vakuumbogenentladung entstehen und
b) die Elektronen der Entladung die Anode oder einen Teil der Anode verdampfen und im wesentlichen hierdurch das Brennmedium zum Erhalt einer selbständigen selbsterhaltenen Bogenentladung erzeugen.
摘要翻译：为了通过真空电弧放电通过电子轰击在真空中或在低气压下蒸发材料，使用阴极和阳极，提出：a）为了获得自发放电，在阴极和阴极中产生电子真空电弧放电和... b）放电的电子使阳极或阳极的一部分蒸发，从而基本上产生用于保持自发的自持电弧放电的电弧介质。 ... ...

39. 发明公开

EP0121818A1 Method and device for metallizing the internal surface of a hollow object 失效
标题翻译：用于金属化的中空制品的内表面的方法和装置。
公开(公告)号：EP0121818A1
公开(公告)日：1984-10-17
申请号：EP84102809.5
申请日：1984-03-14
申请人： TEKTRONIX, INC.
发明人： Zimmerman, Robert R. , Kunkler, Larry , Helderman, Earl R.
IPC分类号： C23C14/04 , C23C14/30 , H01J37/305
CPC分类号： H01J37/3053 , C23C14/046 , C23C14/30
摘要： A coating of metallic material is deposited on the internal surface of a hollow object. An elongate member comprising two electrical conductors extending side-by-side from end-to- end of the member has one end inside the hollow object and its opposite end outside the object. A filament has its two ends connected to the conductors respectively at the one end of the elongate member, and a crucible containing metal to be deposited is supported above the filament and in spaced relationship thereto. By supplying current to the filament by way of the conductors for the filament is heated to achieve thermonic emission. The filament and the crucible are connected to negative and positive terminals respectively of a potential source so that electrons emitted by the filament are accelerated towards the crucible and cause the crucible to be heated by electron bombardment.

40. 发明公开

EP0099174A1 Plated-through hole apparatus and method 失效
标题翻译：装置和通孔的涂布方法。
公开(公告)号：EP0099174A1
公开(公告)日：1984-01-25
申请号：EP83303045.5
申请日：1983-05-26
申请人： Fazlin, Fazal Abbas
发明人： Fazlin, Fazal Abbas
IPC分类号： C23C15/00
CPC分类号： H05K3/4076 , C23C14/046
摘要： An apparatus and method for depositing a thin layer of metal within the hole of an object such as a printed circuit board. The apparatus includes a gas diffusion chamber having a plurality of power electrodes positioned transversely therein. The objects to be treated, such as printed circuit boards, are positioned in the areas between the power electrodes. A supply of electrical energy is connected to the power electrode and to the conductive layers of the printed circuit boards. The method of the invention comprises introducing desired gases into the chamber to flow transversely through the power electrodes and the printed circuit boards such that the gases are excited to a plasma state to sputter a portion of the material constituting the power electrodes into the holes of the printed circuit boards.

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