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31. 发明授权

EP2064729B1 THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES AND METHODS OF FABRICATING THICK NITRIDE SEMICONDUCTOR STRUCTURES 有权
公开(公告)号：EP2064729B1
公开(公告)日：2019-04-24
申请号：EP08726381.0
申请日：2008-03-04
申请人： Cree, Inc.
发明人： SAXLER, Adam William , BURK, JR., Albert Augustus
IPC分类号： H01L21/20 , H01L21/02

32. 发明授权

EP1860683B1 High-Temperature Ion Implantation Apparatus and Methods of Fabricating Semiconductor Devices Using High-Temperature Ion Implantation 有权
公开(公告)号：EP1860683B1
公开(公告)日：2019-04-24
申请号：EP07108883.5
申请日：2007-05-24
申请人： Cree, Inc.
发明人： Suvorov, Alexander
IPC分类号： H01L21/67

34. 发明授权

EP1661170B1 LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS 有权
公开(公告)号：EP1661170B1
公开(公告)日：2019-04-03
申请号：EP04780967.8
申请日：2004-08-12
申请人： Cree, Inc.
发明人： SLATER, David, B, Jr. , EDMOND, John, A. , DONOFRIO, Matthew
IPC分类号： H01L33/40 , H01L21/268

35. 发明授权

EP2702442B1 OPTICAL ARRANGEMENT FOR A SOLID-STATE LAMP 有权转让
公开(公告)号：EP2702442B1
公开(公告)日：2019-03-13
申请号：EP12717969.5
申请日：2012-04-13
申请人： Cree, Inc.
发明人： LU, Dong
IPC分类号： G02B17/08 , F21V5/04 , F21V7/00

36. 发明公开

EP3443593A2 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 有权转让
公开(公告)号：EP3443593A2
公开(公告)日：2019-02-20
申请号：EP17721889.8
申请日：2017-04-05
申请人： Cree, Inc.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/00 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62

37. 发明授权

EP2684422B1 METHOD AND APPARATUS FOR CONTROLLING LIGHT OUTPUT COLOR AND/OR BRIGHTNESS 有权转让
公开(公告)号：EP2684422B1
公开(公告)日：2019-01-23
申请号：EP12711482.5
申请日：2012-02-17
申请人： Cree, Inc.
发明人： VAN DE VEN, Antony, Paul , NEGLEY, Gerald, H.
IPC分类号： H05B33/08

38. 发明授权

EP1754263B1 WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD PLATES 有权
公开(公告)号：EP1754263B1
公开(公告)日：2019-01-16
申请号：EP05756258.9
申请日：2005-04-21
申请人： Cree, Inc.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
IPC分类号： H01L29/812 , H01L29/417 , H01L29/40

39. 发明公开

EP3423748A1 LUMINAIRE UTILIZING WAVEGUIDE 有权转让
公开(公告)号：EP3423748A1
公开(公告)日：2019-01-09
申请号：EP17763756.8
申请日：2017-02-28
申请人： Cree, Inc.
发明人： YUAN, Zongjie , GOLDSTEIN, Corey, J. , WILCOX, Kurt, S.
IPC分类号： F21V8/00

40. 发明授权

EP2573925B1 Circuit For Supplying Electrical Power 有权
公开(公告)号：EP2573925B1
公开(公告)日：2018-12-26
申请号：EP12191488.1
申请日：2007-09-13
申请人： Cree, Inc.
发明人： Myers, Peter Jay
IPC分类号： H02M3/335
CPC分类号： H02M3/335 , Y10T307/297
摘要： A circuit for supplying power comprises: at least a first transformer, the first transformer comprising a primary winding and a secondary winding; a first circuit portion; and a second circuit portion, the first circuit portion comprising the primary winding of the first transformer, at least a first switch and a first sub-circuit, the first switch and the first sub-circuit arranged in parallel. The first sub-circuit comprises at least a first diode and a second sub-circuit, the first diode and the second sub-circuit arranged in series. The second sub-circuit comprises at least a first capacitor and at least a first load arranged in parallel. The second circuit portion comprises the secondary winding of the first transformer, at least a second diode and a third sub-circuit, the second diode and the third sub-circuit arranged in series. The third sub-circuit comprises at least a second capacitor and at least a second load arranged in parallel, at least one of the first load and the second load comprising at least a first solid state light emitting element, at least a first transistor, at least a first resistor and at least a first operational amplifier. The first solid state light emitting element, the first transistor, and the first resistor arranged in series. A cathode end of the first solid state light emitting element is electrically connected to a source of the first transistor. The first resistor is electrically connected to a collector of the first transistor, and the operational amplifier drives a gate voltage of the first transistor. A reference voltage is provided as a first input to the operation amplifier and a voltage from a node between the collector of the first transistor and the first resistor is a second input to the operational amplifier.

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