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21. 发明公开

EP1318540A4 PHOTOMULTIPLIER 有权
标题翻译：光电倍增管
公开(公告)号：EP1318540A4
公开(公告)日：2005-01-19
申请号：EP01951937
申请日：2001-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： ISHIZU TOMOHIRO , KIMURA SUENORI
IPC分类号： H01J43/12 , H01J43/20
CPC分类号： H01J43/12
摘要： A photomultiplier excellent in vibration resistance and having an anode with good pulse linearity characteristic. The photomultiplier has a mesh anode (A) composed of an anode frame (A11) and a mesh electrode (A12) supported and surrounded by the anode frame (A11). The central portion of one long side (A11B) of the anode frame (A11) serves as an electron converging part (F). The inner side of the anode frame (A11) swells toward the inner part of the anode (A), more from the middle of the long side (A11B) toward the corners of the anode frame (A11) along the long side (A11B), and therefore the thickness of the anode frame (A11) increases from the middle of the long side (A11) to the corners along the long side (A11B).

22. 发明公开

EP1318540A1 PHOTOMULTIPLIER 有权
标题翻译： FOTOVERVIELFACHER
公开(公告)号：EP1318540A1
公开(公告)日：2003-06-11
申请号：EP01951937.0
申请日：2001-07-19
申请人： HAMAMATSU PHOTONICS K. K.
发明人： ISHIZU, Tomohiro, Hamamatsu Photonics K.K. , KIMURA, Suenori
IPC分类号： H01J43/12 , H01J43/20
CPC分类号： H01J43/12
摘要： A photomultiplier tube excellent in vibration resistance and having an anode with good pulse linearity characteristic. The photomultiplier tube has a mesh anode (A) composed of an anode frame (A11) and a mesh electrode (A12) supported and surrounded by the anode frame (A11). The central portion of one long side (A11B) of the anode frame (A11) serves as an electron converging part (F). The inner side of the anode frame (A11) swells toward the inner part of the anode (A), more from the middle of the long side (A11B) toward the corners of the anode frame (A11) along the long side (A11B), and therefore the thickness of the anode frame (A11) increases from the middle of the long side (A11) to the corners along the long side (A11B.
摘要翻译：耐振动性优异的具有良好脉冲线性特性的阳极的光电倍增管。光电倍增管具有由阳极框架（A11）和由阳极框架（A11）支撑并围绕的网状电极（A12）构成的网状阳极（A）。阳极框架（A11）的一个长边（A11B）的中心部分用作电子会聚部分（F）。阳极框架（A11）的内侧朝着阳极（A）的内部朝向长边侧面（A11B）从长边侧（A11B）的中央向阳极框架（A11）的角部倾斜，因此，阳极框架（A11）的厚度从长边侧（A11）的中央向长边方向延伸（A11B。

23. 发明授权

EP0714117B1 Photomultiplier 失效
标题翻译：光电倍增管
公开(公告)号：EP0714117B1
公开(公告)日：2002-02-06
申请号：EP95308117.1
申请日：1995-11-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Suyama, Motohiro , Muramatsu, Masaharu , Oishi, Makoto , Ishikawa, Yoshitaka , Yamamoto, Koei
IPC分类号： H01J43/12 , H01J43/10 , H01J1/32
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12

24. 发明公开

EP1150333A1 PHOTOMULTIPLIER 审中-公开
标题翻译： PHOTOVERVIELFACHER
公开(公告)号：EP1150333A1
公开(公告)日：2001-10-31
申请号：EP99900353.6
申请日：1999-01-19
申请人： Hamamatsu Photonics K.K.
发明人： KIMURA, Suenori, Hamamatsu Photonics K.K. , ITO, Masuo, Hamamatsu Photonics K.K.
IPC分类号： H01J43/12 , H01J43/16
CPC分类号： H01J43/16 , H01J43/12
摘要： In this photomultiplier tube (1), light incident on a light-receiving faceplate (3) is converted into photoelectrons by a photosensitive surface (3a), and the photoelectrons strike a dynode (4) to emit many secondary electrons. The secondary electrons are then collected by a mesh-like anode (5). Since the anode (5) is disposed to be parallel to the photosensitive surface (3a), the photoelectrons emerging from the photosensitive surface (3a) can easily pass through a mesh portion (5a), and many photoelectrons can be made to strike the dynode (4). As the number of photoelectrons incident on the dynode (4) increases, the number of secondary electrons from the dynode (4) increases. This improves the gain characteristics of the photomultiplier tube (1). In addition, since the anode (5) is formed to have a flat shape conforming to the shape of the photosensitive surface (3a), the mesh-like anode (5) can be easily molded. Since a secondary electron emission surface (4a) of the dynode (4) is tilted with respect to the anode (5), photoelectrons having passed through the anode (5) obliquely strike the secondary electron emission surface (4a) of the dynode (4). As a consequence, the number of secondary electrons emitted can be increased. This also improves the gain characteristics of the photomultiplier tube (2).
摘要翻译：在该光电倍增管（1）中，入射到受光面板（3）上的光被光敏表面（3a）转换成光电子，光电子发射多极数（4）以发射许多二次电子。二次电子然后被网状阳极（5）收集。由于阳极（5）被设置为平行于感光表面（3a），从感光表面（3a）出射的光电子能够容易地通过网格部分（5a），并且可以使许多光电子撞击倍增极（4）。随着入射到倍增极（4）上的光电子的数量增加，来自倍增极（4）的二次电子的数量增加。这改善了光电倍增管（1）的增益特性。此外，由于阳极（5）形成为与感光面（3a）的形状一致的平坦形状，所以能够容易地模制网状阳极（5）。由于倍增极（4）的二次电子发射表面（4a）相对于阳极（5）倾斜，所以通过阳极（5）的光电子倾斜地撞击倍增极（4）的二次电子发射表面（4a））。结果，可以增加发射的二次电子的数量。这也改善了光电倍增管（2）的增益特性。

25. 发明公开

EP0698911A2 Position sensitive photomultiplier 失效
标题翻译： Positionempfindlicher Photovervielfacher
公开(公告)号：EP0698911A2
公开(公告)日：1996-02-28
申请号：EP95305888.0
申请日：1995-08-23
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kyushima, Hiroyuki, c/o Hamamatsu Photonics K.K. , Kawano, Eiichiro, c/o Hamamatsu Photonics K.K. , Mizuide, Masuya, c/o Hamamatsu Photonics K.K. , Yokota, Hiroto, c/o Hamamatsu Photonics K.K.
IPC分类号： H01J43/12 , H01J43/04
CPC分类号： H01J43/12 , H01J43/045
摘要： This invention relates to a photomultiplier for detecting the incident position of a plane of incidence, where a weak light beam is reached and to a photomultiplier having a structure for minimizing crosstalk near the incident position of the weak light beam to improve the precision of the position resolving power. Particularly, the anode of this photomultiplier, which extracts the incident position of the incident weak light as an electrical signal, is constituted by a first anode component for detecting the incident position of the incident plane in the X direction and a second anode component for detecting the incident position of the incident plane in the Y direction. The first and second anode components have flat surfaces. These flat surfaces cause the first and second anode components to capture secondary electrons emitted from a dynode in correspondence with the incident position of the weak light beam, at a position closer to the emission position. The photomultiplier detects the incident position of the weak light beam at a higher resolving power while minimizing the crosstalk.
摘要翻译：本发明涉及一种光电倍增器，用于检测到达弱光束的入射入射位置和具有使弱光束入射位置附近的串扰最小化的结构的光电倍增管，以提高位置精度分辨力特别地，提取入射的弱光的入射位置作为电信号的该光电倍增管的阳极由用于检测入射面在X方向的入射位置的第一阳极部件和用于检测入射面的第二阳极部件入射飞机在Y方向的入射位置。第一和第二阳极部件具有平坦表面。这些平坦表面使得第一和第二阳极部件在更靠近发射位置的位置处捕获与从多个极化发射的二次电子对应于弱光束的入射位置。光电倍增器以更高的分辨能力检测弱光束的入射位置，同时最小化串扰。

26. 发明授权

EP0495283B1 Semiconductor anode photomultiplier tube 失效
标题翻译：光电倍增管与半导体阳极。
公开(公告)号：EP0495283B1
公开(公告)日：1995-06-14
申请号：EP91303584.6
申请日：1991-04-22
申请人： BURLE TECHNOLOGIES, INC.
发明人： Tomasetti, Charles M.
IPC分类号： H01J31/26 , H01J43/12
CPC分类号： H01J43/12 , H01J43/04

27. 发明公开

EP1717843A4 PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD 有权
标题翻译：光电倍增管确保两HERSTELLUNGSVRFAHREN
公开(公告)号：EP1717843A4
公开(公告)日：2008-12-17
申请号：EP05710248
申请日：2005-02-16
申请人： HAMAMATSU PHOTONICS KK
发明人： KYUSHIMA HIROYUKI , SHIMOI HIDEKI , KAGEYAMA AKIHIRO , INOUE KEISUKE , ITO MASUO
IPC分类号： H01J43/24 , H01J43/12 , H01J43/28
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： A photomultiplier having a structure for easily realizing high detection accuracy and microfabrication and its manufacturing method are disclosed. The photomultiplier (1a) comprises an enclosure (2, 3, 4) the inside of which is maintained in a vacuum state. In the enclosure (2, 3, 4), a photoelectric surface (22) for emitting electrons in response to the incident light, an electron multiplying section (31) for cascade-multiplying electrons emitted from the photoelectric surface (22), and an anode (32) for extracting secondary electrons produced by the electron multiplying section (31) are provided. A part of the enclosure (2, 3, 4) is composed of glass substrates (20, 40) each having a flat portion. On the flat portions of the glass substrates (20, 40), the electron multiplying section (31) and the anode (32) are two-dimensionally arranged, respectively.

28. 发明公开

EP1717843A1 PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD 有权
标题翻译： FOTOVERVIELFACHER UND HERSTELLUNGSVRFAHRENDAFÜR
公开(公告)号：EP1717843A1
公开(公告)日：2006-11-02
申请号：EP05710248.5
申请日：2005-02-16
申请人： HAMAMATSU PHOTONICS K.K.
发明人： KYUSHIMA, Hiroyuki, Hamamatsu Photonics K. K. , SHIMOI, Hideki, Hamamatsu Photonics K. K. , KAGEYAMA, Akihiro, Hamamatsu Photonics K. K. , INOUE, Keisuke, Hamamatsu Photonics K. K. , ITO, Masuo,2Hamamatsu Photonics K. K.
IPC分类号： H01J43/28 , H01J43/12 , H01J43/24
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
摘要翻译：本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极在电子倍增器部分中产生的电极被布置在外壳中。外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

29. 发明公开

EP1150333A4 PHOTOMULTIPLIER 审中-公开
标题翻译：光电倍增管
公开(公告)号：EP1150333A4
公开(公告)日：2006-03-22
申请号：EP99900353
申请日：1999-01-19
申请人： HAMAMATSU PHOTONICS KK
发明人： KIMURA SUENORI , ITO MASUO
IPC分类号： H01J43/12 , H01J43/16
CPC分类号： H01J43/16 , H01J43/12
摘要： A photomultiplier (1), wherein a ray of light incident on a light receiving surface plate is converted into photoelectrons at a photoelectric surface (3a) for entry into a dynode (4) and secondary electrons from the dynode is collected at a mesh-shaped anode (5). Since the anode (5) is disposed in parallel to the photoelectric surface, photoelectrons from the photoelectric surface can easily pass through the mesh portion of the anode to enhance gain characteristics of the photomultiplier. In addition, the anode can be easily formed into a flat plate shape. Since the secondary electron emission surface (4a) of the dynode (4) is disposed inclined with respect to the anode to allow a slant incidence of photoelectrons, emission amount of secondary electrons is increased to enhance gain characteristics of the photomultiplier.

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