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21. 发明授权

EP2509099B1 Electron beam exposure method 有权
标题翻译： Elektronenstrahlexpositionsverfahren
公开(公告)号：EP2509099B1
公开(公告)日：2016-12-21
申请号：EP12162992.7
申请日：2012-04-03
申请人： Advantest Corporation
发明人： Kurokawa, Masaki , Yamada, Akio , Okawa, Tatsuro
IPC分类号： H01J37/302 , H01J37/317 , G03F1/78 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3023 , H01J2237/30461 , H01J2237/31769

22. 发明授权

EP2388801B1 MULTI-COLUMN ELECTRON BEAM LITHOGRAPHY SYSTEM AND ELECTRON BEAM ORBIT ADJUSTING METHOD THEREOF 有权
标题翻译：随着对调节电子TRAIN多列和方法电子光刻系统
公开(公告)号：EP2388801B1
公开(公告)日：2012-11-07
申请号：EP09841827.0
申请日：2009-03-16
申请人： Advantest Corporation , Yabe, Takayuki
发明人： YAMADA, Akio
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/15 , H01J2237/30461 , H01J2237/30472

23. 发明公开

EP2471086A2 PATTERN MODIFICATION SCHEMES FOR IMPROVED FIB PATTERNING 有权
标题翻译： PATTERN用于改进时间表改性FIB筛选
公开(公告)号：EP2471086A2
公开(公告)日：2012-07-04
申请号：EP10812685.5
申请日：2010-08-28
申请人： FEI Company
发明人： MIRRO, Gene , KOOIJMAN, Cornelis, Sander , VOS, Hendrik Jan de , MILLER, Tom
IPC分类号： H01J37/147 , H01J37/04
CPC分类号： H01J3/26 , H01J37/1472 , H01J37/1477 , H01J37/3026 , H01J2237/1504 , H01J2237/1518 , H01J2237/1526 , H01J2237/30416 , H01J2237/3045 , H01J2237/30461
摘要： An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.

24. 发明授权

EP1095393B1 SYSTEM AND METHOD TO CORRECT FOR DISTORTION CAUSED BY BULK HEATING IN A SUBSTRATE 有权
标题翻译：系统和方法用于校正VOLUMENEUFHEIZUNG在衬底引起的失真
公开(公告)号：EP1095393B1
公开(公告)日：2008-08-20
申请号：EP00923351.1
申请日：2000-04-12
申请人： APPLIED MATERIALS, INC.
发明人： CHILESE, Francis, C. , SHAMOUN, Bassam , TROST, David
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/30455 , H01J2237/30461
摘要： An electron beam writing system includes an electron beam patterning machine operable to emit an electron beam to form a pattern on a substrate. A computer control system, coupled to the electron beam patterning machine, has a plurality of pre-computed distortion maps. Each distortion map describes expected distortions of the substrate caused by bulk heating resulting from exposure to the electron beam. The computer control system controls the electron beam patterning machine using the distortion maps in order to adjust for the expected distortions.

25. 发明公开

EP1482374A2 Method of generating mask distortion data, exposure method and method of producing semiconductor device 审中-公开
标题翻译：一种用于产生Maskenverzeichnungsdaten，曝光方法，以及用于生产半导体器件的方法
公开(公告)号：EP1482374A2
公开(公告)日：2004-12-01
申请号：EP04012335.8
申请日：2004-05-25
申请人： SONY CORPORATION
发明人： Omori, Shinji
IPC分类号： G03F9/00
CPC分类号： G03F9/7003 , G03F1/20 , G03F1/68 , G03F9/7084 , H01J2237/30461 , H01J2237/31794 , Y10S430/143
摘要： A method of generating mask distortion data capable of improving accuracy of distortion measurement, an exposure method using the same and a method of producing a semiconductor device, wherein a production mask is produced by a first thin film formed with a predetermined pattern, and a positional accuracy measurement mask is produced by forming second positional accuracy measurement marks at substantially same positions as those of the first positional accuracy measurement marks on a mask blanks having a second thin film, positions of the second positional accuracy measurement marks and third positional accuracy measurement marks of the positional accuracy measurement mask are measured, a correlation function of the both are calculated, positions of the first positional accuracy measurement marks of the production mask are measured, and mask distortion data on the first thin film of the production mask is generated by using the correlation function.

26. 发明公开

EP0307906A1 Compensating eddy current effects in charged particle beam systems 失效
标题翻译：在Ionenstrahlsystemen的冯Wirbelstromeffekten的补偿。
公开(公告)号：EP0307906A1
公开(公告)日：1989-03-22
申请号：EP88115117.9
申请日：1988-09-15
申请人： FUJITSU LIMITED
发明人： Yasuda, Hiroshi c/o Fujitsu Limited , Suzuki, Masahiko c/o Fujitsu Limited
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , H01J2237/0209 , H01J2237/30461 , H01J2237/31766
摘要： Methods of avoiding or mitigating effects of eddy currents due to leakage flux of a magnetic lens (2) in a charged particle beam exposure system, and systems (apparatuses) which can expose a substrate to a charged particle beam (8) while a stage (1) carrying the substrate is moving. A step and repeat exposure system can be operated while the stage (1) is moving, so that the throughput of the system is improved. Deviation of the charged particle beam (8) caused by eddy currents is proportional to the velocity of the stage (V x , V y ). Proportional constants (A, B, C, D) of the beam deviation to the velocity of the stage (1) are therefore measured in advance, and a correction term which is a product of the speed of the stage and the proportional constant is fed back to a deflector (33) of the charged particle beam (8). The proportional constants, for example, are obtained from the shift of an image of a test pattern viewed on a CRT in a SEM mode, from a first image position when the stage is not moving to a second position when the stage is moving with a constant speed.
摘要翻译：避免或减轻由于带电粒子束曝光系统中的磁性透镜（2）的漏磁通导致的涡流效应的方法，以及可将基板暴露于带电粒子束（8）的系统（装置） 1）携带衬底正在移动。在阶段（1）移动时可以操作步骤和重复曝光系统，从而提高系统的吞吐量。由涡流引起的带电粒子束（8）的偏差与载物台（Vx，Vy）的速度成比例。因此，预先测量光束偏离与舞台（1）的速度的比例常数（A，B，C，D），并且馈送作为舞台速度与比例常数的乘积的校正项返回到带电粒子束（8）的偏转器（33）。例如，比例常数是从扫描模式观察到的测试图形的图像的位移从第一图像位置从平台未移动到第二位置时移动得到的恒速。

27. 发明公开

EP3326192A1 A METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BEAM LITHOGRAPHY 审中-实审转让
公开(公告)号：EP3326192A1
公开(公告)日：2018-05-30
申请号：EP16744685.5
申请日：2016-07-19
申请人： Aselta Nanographics
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3023 , H01J37/3174 , H01J2237/24507 , H01J2237/30461 , H01J2237/31769
摘要： A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam, the method comprising: - a step of producing a dose map, associating a dose to each of a plurality of elementary features of said pattern; and - a step of exposing the substrate according to the pattern with a spatially-dependent dose depending on said dose map; characterized in that said step of producing a dose map includes: - computing at least two metrics for each of said elementary features of the pattern; and - determining the emitted dose associated to each of said elementary features of the pattern as a function of said metrics. A computer program product for carrying out such a method or at least said step of producing a dose map.

28. 发明公开

EP2509099A3 Electron beam exposure apparatus and electron beam exposure method 有权
标题翻译： Elektronenstrahlexpositionsvorrichtung und Elektronenstrahlexpositionsverfahren
公开(公告)号：EP2509099A3
公开(公告)日：2014-03-19
申请号：EP12162992.7
申请日：2012-04-03
申请人： Advantest Corporation
发明人： Kurokawa, Masaki , Yamada, Akio , Okawa, Tatsuro
IPC分类号： H01J37/302 , H01J37/317 , G03F1/78 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3023 , H01J2237/30461 , H01J2237/31769
摘要： In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S41 and S44). Then, correction parameters are obtained, which allow a relationship between exposure intensity and a line width for a correction target column cell to coincide with a relationship between exposure intensity and a line width for a reference column cell selected from among the plurality of column cells (Steps S43 and S46). Thereafter, exposure time of each column cell is obtained by correcting the exposure time of the reference column cell based on the correction parameters thus obtained (Steps S30 and S40).
摘要翻译：在多列电子束曝光装置中，通过在晶片上配置多个列单元进行并行进行曝光处理，得到各列单元的曝光强度与线宽之间的关系（步骤S41，步骤S44）。然后，获得校正参数，其允许校正目标列单元的曝光强度和线宽之间的关系与从多个列单元格中选择的参考列单元的曝光强度和线宽之间的关系一致（步骤S43和S46）。此后，通过基于由此获得的校正参数校正参考列单元的曝光时间来获得每列列单元的曝光时间（步骤S30和S40）。

29. 发明授权

EP2471086B1 PATTERN MODIFICATION SCHEMES FOR IMPROVED FIB PATTERNING 有权
标题翻译：改进FIB图案的图案修改方案
公开(公告)号：EP2471086B1
公开(公告)日：2013-12-11
申请号：EP10812685.5
申请日：2010-08-28
申请人： FEI Company
发明人： MIRRO, Gene , KOOIJMAN, Cornelis, Sander , VOS, Hendrik Jan de , MILLER, Tom
IPC分类号： H01J37/147 , H01J37/04 , H01J37/302
CPC分类号： H01J3/26 , H01J37/1472 , H01J37/1477 , H01J37/3026 , H01J2237/1504 , H01J2237/1518 , H01J2237/1526 , H01J2237/30416 , H01J2237/3045 , H01J2237/30461

30. 发明公开

EP1722398A1 Deflection Signal Compensation for Charged Particle Beam 有权
标题翻译： Ablenksignal-Kompensationfürein Strahl von geladenen Teilchen
公开(公告)号：EP1722398A1
公开(公告)日：2006-11-15
申请号：EP06113787.3
申请日：2006-05-11
申请人： FEI COMPANY
发明人： Hill, Raymond , Rosenberg, Steve , Downer, Daniel
IPC分类号： H01J37/302 , H01J37/147
CPC分类号： H01J37/1474 , H01J37/1477 , H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/1516 , H01J2237/30461 , H01J2237/30483
摘要： Charged particles that are in transit through a deflection system when the beam is repositioned do not received the correct deflection force and are misdirected. By independently applying signals to the multiple stages of a deflection system, the number of misdirected particles during a pixel change is reduced.
摘要翻译：当光束重新定位时通过偏转系统运送的带电粒子没有被接收到正确的偏转力并被误导。通过独立地将信号施加到偏转系统的多个级，在像素变化期间，误导颗粒的数量减少。

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