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    • 22. 发明公开
    • PHOTODETECTOR DEVICE
    • 光电探测器装置
    • EP1136798A1
    • 2001-09-26
    • EP99973121.9
    • 1999-12-02
    • Hamamatsu Photonics K.K.
    • MIZUNO, Seiichiro
    • G01J1/44H01L31/10G01T1/20
    • G06G7/1865G01J1/44H03F3/3001H03F3/45076
    • An integrator circuit (10) receiving a current signal from the anode terminal of a photodiode (PD) includes a two-input, two-output fall-differential amplifier (A0), capacitors (C01, C02), switches (S01, S02, S11, S12), and an additional capacitor (Ca). The capacitor (C01) and the switch (S01) are connected in parallel between the negative and positive input terminals of the full-differential amplifier (A0). The negative input terminal of the full-differential amplifier (A0) is connected with the anode terminal of the photodiode (PD). The capacitor (C02) and the switch (S02) are connected in parallel between the positive and negative input terminals of the full-differential amplifier (A0). The positive input terminal of the full-differential amplifier (A0) is connected with the additional capacitor (Ca) whose capacitance is substantially equal to the junction capacitance of the photodiode (PD).
    • 接收来自光电二极管(PD)的阳极端子的电流信号的积分电路(10)包括双输入双输出下降差分放大器(A0),电容器(C01,C02),开关(S01,S02, S11,S12)和附加电容器(Ca)。 电容器(C01)和开关(S01)并联在全差分放大器(A0)的负输入端和正输入端之间。 全差分放大器(A0)的负输入端与光电二极管(PD)的阳极端连接。 电容器(C02)和开关(S02)并联在全差分放大器(A0)的正和负输入端之间。 全差分放大器(A0)的正输入端与附加电容器(Ca)连接,该电容器的电容基本上等于光电二极管(PD)的结电容。
    • 26. 发明公开
    • SOLID-STATE IMAGING DEVICE
    • 固态成像装置
    • EP2104341A1
    • 2009-09-23
    • EP07850433.9
    • 2007-12-11
    • Hamamatsu Photonics K.K.
    • TAKA, TetsuyaMIZUNO, SeiichiroFUNAKOSHI, Haruhiro
    • H04N5/335
    • H04N5/378H04N5/361
    • A solid-state imaging device 1 includes photodiodes PD 1 to PD N , charge-voltage converting circuits 10 1 to 10 N , pre-holding circuits 20 1 to 20 N , a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10 n inputs charges generated at the photodiode PD n and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20 n holds the output voltage value from the charge-voltage converting circuit 10 n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 20 1 to 20 N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.
    • 固态成像装置1包括光电二极管PD1至PDN,电荷电压转换电路101至10N,预保持电路201至20N,跨导放大器30,峰值保持电路50和后保持电路60。 电荷电压转换电路10n输入在光电二极管PDn处产生的电荷并且输出与该输入电荷量对应的电压值。 预保持电路20n保持来自电荷电压转换电路10n的输出电压值,并将该输出电压值作为电流输出。 跨阻抗放大器30将从预保持电路201至20N连续输出的电压值作为电流输入,并且将基于来自根据变化量流动的电流的跨阻抗转换的电压值从参考电压值输出到输入电压值。 峰值保持电路50保持并输出来自跨阻放大器30的输出电压值的峰值保持电压。
    • 27. 发明公开
    • PHOTODETECTOR
    • PHOTODETEKTOR
    • EP2060887A1
    • 2009-05-20
    • EP07806740.2
    • 2007-09-05
    • Hamamatsu Photonics K.K.
    • MIZOGUCHI, MasakiSUZUKI, YasuhiroMIZUNO, SeiichiroYAMAMOTO, Hiroo
    • G01J1/44H01L21/822H01L27/04H01L31/10
    • G01J1/46H01L27/14609H04N5/3575H04N5/378
    • A photodetecting device 1 includes a photodiode PD m,n , a switch SW m,n for the photodiode, an integrating circuit 12 m , and a noise removing circuit 13 m . The integrating circuit 12 m accumulates in a capacitor C fk an electric charge input from the photodiode PD m,n through the switch SW m,n for the photodiode, and outputs a voltage value according to the amount of the accumulated electric charge. The noise removing circuit 13 m includes an amplifier A 3 , five switches SW 31 to SW 35 , four capacitors C 31 to C 34 , and a power supply V 3 . The noise removing circuit 13 m takes in a voltage value that is output from the integrating circuit 12 m at a time where the switch SW 31 is first turned from a closed state to an open state, and after the time, outputs a voltage value according to a difference between the voltage value that is output from the integrating circuit 12 m and the voltage value previously taken in.
    • 受光器件1包括光电二极管PD m,n,用于光电二极管的开关SW m,n,积分电路12 m和噪声去除电路13m。 积分电路12m通过用于光电二极管的开关SW m,n累积从光电二极管PD m,n输入的电荷的电容器C fk,并输出与累积电荷量相对应的电压值。 噪声去除电路13m包括放大器A 3,五个开关SW 31至SW 35,四个电容器C 31至C 34以及电源V 3。 噪声去除电路13m在开关SW 31首先从闭合状态转为断开状态时从积分电路12m输出的电压值,并且在此之后输出电压值 对于从积分电路12 m输出的电压值与之前摄入的电压值的差。
    • 29. 发明公开
    • SOLID STATE IMAGING DEVICE
    • 固态成像装置
    • EP1874044A1
    • 2008-01-02
    • EP06731667.9
    • 2006-04-12
    • HAMAMATSU PHOTONICS K.K.
    • SUGIYAMA, YukinobuMIZUNO, Seiichiro
    • H04N5/335H01L27/146
    • H04N5/35554H04N5/347H04N5/3535
    • A solid-state imaging device 1 is provided with (1) a photodetecting section 11 in which MxN of pixels are two-dimensionally arranged in M rows and N columns, and a pixel P m,n at the m-th row and the n-th column includes a photodiode PD1 m , n , (2) a row selecting section 20 that selects one or more rows, out of M rows of the photodetecting section 11, instructs each pixel in the selected rows to accumulate an electric charge generated in the photodiode PD1 m,n in response to the incidence of light, and instructs to output data corresponding to the amount of accumulated electric charge of each pixel by each row of the photodetecting section 11, and (3) a first signal processing section 30 that inputs data of each pixel, outputted by each row of the photodetecting section 11 by an instruction from the row selecting section 20, and outputs the data by each pixel.
    • 固态成像装置1设置有(1)光电检测部11,其中M×N个像素以二维方式布置在M行和N列中,并且第m行和第n列中的像素P m, (2)从光检测部11的M列中选择1行以上的行的行选择部20指示选择行中的各像素累积在光电二极管PD1m,n中产生的电荷 (3)第一信号处理部30,其根据光的入射量PD1m,n,指示与受光部11的各行的各像素的蓄积电荷量对应的数据,(3)第一信号处理部30, 通过来自行选择部20的指示,由光检测部11的各行输出的各像素,按照各像素输出数据。
    • 30. 发明公开
    • SOLID-STATE IMAGE PICKUP DEVICE
    • 固态图像拾取设备
    • EP1850387A1
    • 2007-10-31
    • EP06712922.1
    • 2006-02-02
    • HAMAMATSU PHOTONICS K.K.
    • MORI, HarumichiFUJITA, KazukiKYUSHIMA, RyujiHONDA, MasahikoMIZUNO, Seiichiro
    • H01L27/146H04N5/335
    • H04N5/3559H01L27/14603H01L27/14609H01L27/14643
    • There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion P m,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T 1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T 2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T 1 ; a discharging transistor T 3 for discharging the charges of the capacitive element C; and a selecting' transistor T 4 for selectively outputting a voltage value output from the amplifying transistor T 1 to a wiring L n .
    • 提供了具有改进的线性度和动态范围的固态成像设备。 固态成像装置中的每个像素部分Pm,n包括:埋入式光电二极管PD,用于产生与入射光的强度相对应的量的电荷; 与埋入型光电二极管PD并联连接的电容元件C,用于蓄积在埋入型光电二极管PD中生成的电荷; 放大晶体管T1,用于输出对应于输入到栅极端子的电压值的电压值; 转移晶体管T2,用于将与电容元件C中的累积电荷量相对应的电压值输入到放大晶体管T1的栅极端子; 放电晶体管T3,用于放电电容元件C的电荷; 以及选择晶体管T4,用于选择性地将从放大晶体管T1输出的电压值输出到布线Ln。