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    • 7. 发明公开
    • LENGTH MEASURING ELEMENT AND SOLID-STATE IMAGE CAPTURING DEVICE
    • 长度测量元件和固态图像捕获装置
    • EP3279942A1
    • 2018-02-07
    • EP16771796.6
    • 2016-03-31
    • National University Corporation Shizuoka University
    • KAWAHITO, Shoji
    • H01L27/146G01S7/481H01L27/144H01L31/10H04N5/361H04N5/369H04N5/374H04N5/3745
    • H01L27/14638G01S7/481H01L27/144H01L27/146H01L27/14605H01L27/14623H01L27/14643H01L31/10H04N5/361H04N5/369H04N5/374H04N5/3745
    • Provided are a range sensor having a large light receiving area and capable of high-speed modulation with high sensitivity at a low dark current, and a solid-state imaging device using the range sensor. The range sensor includes: an n-type surface-buried region (25) selectively buried in an upper portion of a pixel layer (22) to implement a photodiode and extending from a light-receiving area toward plural portions shielded by a shielding plate (51) along the upper portion of the pixel layer (22) so as to provide a plurality of branches; n-type charge-accumulation regions (24b, 24d, 24c) having a higher impurity concentration than the surface-buried region (25); a plurality of transfer gate electrodes (42, 44, 43) provided adjacent to the charge-accumulation regions; and an n-type guide region (26a) having a higher impurity concentration than the surface-buried region (25) and a lower impurity concentration than the charge-accumulation regions, and provided with one end below an aperture of the shielding plate (51) and other ends extending to a part of the respective transfer gate electrodes.
    • 本发明提供一种范围传感器以及使用该范围传感器的固体摄像装置,该范围传感器具有较大的受光面积并且能够在低暗电流下以高灵敏度进行高速调制。 范围传感器包括:选择性地埋入像素层(22)的上部以实现光电二极管并从光接收区域朝向被屏蔽板(22)屏蔽的多个部分延伸的n型表面掩埋区域(25) 沿着像素层(22)的上部提供多个分支; 具有比表面埋入区域(25)高的杂质浓度的n型电荷蓄积区域(24b,24d,24c)。 多个传输门电极(42,44,43),设置在电荷积聚区附近; 和具有比表面埋入区域(25)高的杂质浓度和比电荷蓄积区域更低的杂质浓度的n型引导区域(26a),并且在屏蔽板(51)的开口的下方设置一端 )以及延伸到各个传输栅极电极的一部分的另一端。