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11. 发明公开

EP0293185A3 Semiconductor laser device and method for manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：EP0293185A3
公开(公告)日：1989-04-12
申请号：EP88304737.5
申请日：1988-05-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Nakamura, Masaru c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Okuda, Hajime c/o Patent Division
IPC分类号： H01S3/19 , H01L27/15 , H01L33/00
CPC分类号： H01S5/026 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate (10) having an n-type buffer layer (11), a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region (13c) provided above the buffer layer, an active region (12a) consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions (13a) integrally formed with the low resistive sregion and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole (35) is provided between the buffer layer and low sresistive region on the side of buried portion. The auxiliary element includes a high resistive regions (13d) integrally formed with the low resistant region and positioned on the sides of low resistive region.

12. 发明公开

EP0293185A2 Semiconductor laser device and method for manufacturing the same 失效
标题翻译： Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung。
公开(公告)号：EP0293185A2
公开(公告)日：1988-11-30
申请号：EP88304737.5
申请日：1988-05-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Nakamura, Masaru c/o Patent Division , Suzuki, Nobuo c/o Patent Division , Hirayama, Yuzo c/o Patent Division , Okuda, Hajime c/o Patent Division
IPC分类号： H01S3/19 , H01L27/15 , H01L33/00
CPC分类号： H01S5/026 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/227 , H01S5/2275 , H01S5/2277 , H01S5/32391
摘要： A semiconductor laser device comprises a substrate (10) having an n-type buffer layer (11), a semiconductor laser element and auxiliary element, provided side by side on the buffer layer. The semiconductor laser element includes a mesa portion having a p-type low resistant semiconductor region (13c) provided above the buffer layer, an active region (12a) consisting of a semiconductor formed on the buffer layer and low resistant region, a pair of buried portions (13a) integrally formed with the low resistive sregion and formed on and contiguous to opposite sides of the active region in the width direction. A lateral hole (35) is provided between the buffer layer and low sresistive region on the side of buried portion. The auxiliary element includes a high resistive regions (13d) integrally formed with the low resistant region and positioned on the sides of low resistive region.
摘要翻译：半导体激光装置包括在缓冲层上并排设置的具有n型缓冲层（11），半导体激光元件和辅助元件的衬底（10）。半导体激光元件包括具有设置在缓冲层上方的p型低电阻半导体区域（13c）的台面部分，由缓冲层上形成的半导体和低电阻区域构成的有源区域（12a），一对埋入与低电阻区域整体形成并形成在有源区域的宽度方向的相对侧上且与其邻接的部分（13a）。横向孔（35）设置在缓冲层和掩埋部分侧的低阻力区域之间。辅助元件包括与低电阻区域整体形成并位于低电阻区域侧面的高电阻区域（13d）。

13. 发明公开

EP2845273A1 METHODS FOR PRODUCING NEW SILICON LIGHT SOURCE AND DEVICES 有权
标题翻译：一种用于生产新型硅光源器件
公开(公告)号：EP2845273A1
公开(公告)日：2015-03-11
申请号：EP12726648.4
申请日：2012-04-30
申请人： Tubitak
发明人： KALEM, Seref
IPC分类号： H01S5/30 , H01S5/32 , H01S5/183 , H01S5/22 , H01L33/34 , H01L21/28 , H01L29/51
CPC分类号： H01L33/40 , H01L29/7831 , H01L33/002 , H01L33/0041 , H01L33/0054 , H01L33/346 , H01L2933/0016 , H01S5/0208 , H01S5/0425 , H01S5/183 , H01S5/187 , H01S5/22 , H01S5/2201 , H01S5/304 , H01S5/3227
摘要： The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.

14. 发明公开

EP2581996A1 GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译：葡萄糖酸三钠 - 硝酸盐 - 柠檬酸钠
公开(公告)号：EP2581996A1
公开(公告)日：2013-04-17
申请号：EP10852927.2
申请日：2010-12-27
申请人： Sumitomo Electric Industries, Ltd.
发明人： TAKAGI Shimpei , YOSHIZUMI Yusuke , KATAYAMA Koji , UENO Masaki , IKEGAMI Takatoshi
IPC分类号： H01S5/343
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Provided is a the method of fabricating the III-nitride semiconductor laser, which can improve the flatness of the cavity mirrors in the III-nitride semiconductor laser device and which can reduce the threshold current. The substrate product SP is positioned with respect to the edge 71b of the support device 71 such that the orientation of the scribed groove 65a of the substrate product SP1 is aligned with the direction in which the edge 71 b of the support device 71 extends. The substrate product SP is divided into a first region 70a and a second region 70b with respect to the reference line (X-coordinate A1) that extends along the edge 71b. The breakup of the substrate product SP by the press on the second region 70b is implemented while supporting the first region 70a by the support device 71, thereby forming the other substrate product SP1 and the laser bar LB 1. The direction of the edge 69a of the breaking device 69 is aligned with the direction that the edge 71b extends, and the edge 69a of the breaking device 69 is pressed on the substrate product SP from a direction intersecting with the second surface 63b.
摘要翻译：提供了一种制造III族氮化物半导体激光器的方法，其可以提高III族氮化物半导体激光器件中的腔镜的平坦度，并且可以降低阈值电流。衬底产品SP相对于支撑装置71的边缘71b定位，使得衬底产品SP1的划线槽65a的取向与支撑装置71的边缘71b延伸的方向对准。基板产品SP相对于沿着边缘71b延伸的基准线（X坐标A1）分为第一区域70a和第二区域70b。在支撑装置71支撑第一区域70a的同时，通过压力机在第二区域70b上分解衬底产品SP，从而形成另一个衬底产品SP1和激光棒LB 1.边缘69a的方向断开装置69与边缘71b延伸的方向对准，并且断开装置69的边缘69a从与第二表面63b相交的方向按压在基板产品SP上。

15. 发明公开

EP1848075A1 Optimized wire bonding of an integrated modulator and laser diode on a mount 有权转让
标题翻译：的Optimitierte布线具有激光二极管调制器上的安装板集成
公开(公告)号：EP1848075A1
公开(公告)日：2007-10-24
申请号：EP07000378.5
申请日：2007-01-09
申请人： OpNext Japan, Inc.
发明人： Kagaya, Osamu
IPC分类号： H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042
CPC分类号： H01S5/02248 , H01L24/48 , H01L24/49 , H01L2224/45014 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/12042 , H01L2924/30107 , H01L2924/3011 , H01S5/0208 , H01S5/02212 , H01S5/02276 , H01S5/0265 , H01S5/0422 , H01S5/0427 , H01S5/06226 , H01S5/0683 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An optical transmission module of the invention uses a semiconductor chip (22) forming an optical modulator integrated laser on a semi-insulating semiconductor board (23). An input transfer line (27) and an anode electrode of an optical modulator element (21) are connected by a first bonding wire (31). The anode electrode of the optical modulator element (21) and one of the ends of a terminal resistor element (24) are connected by a second bonding wire (32). A cathode electrode of the optical modulator element (21) and the other end of the terminal resistor element (24) are connected by a third bonding wire (33). The cathode electrode of the optical modulator element (21) and a ground electrode (25) are connected by a fourth bonding wire (34). A joint portion between the first bonding wire (31) and the input transfer line (27) is arranged on an opposite side to a joint portion between the fourth bonding wire (34) and the ground electrode (25) while interposing the semiconductor chip (22) between them.
摘要翻译：本发明的光传输模块在半绝缘半导体基板（23）使用一个半导体芯片（22），形成在光调制器集成激光器。器的输入传输线（27）和到光调制器元件（21）的阳极电极通过第一接合线（31）相连接。光调制器元件（21）和终端电阻元件（24）的端部中的一个的阳极电极通过第二接合线（32）相连接。光调制器元件（21）与终端电阻元件（24）的另一端的阴极电极通过第三接合线（33）相连接。光调制器元件（21）和接地电极（25）的阴极电极由第四接合线（34）相连接。第一键合线（31）和所述输入传输线（27）之间的接合部的相反侧设置在所述第四接合线（34）和接地电极（25）之间的接合部分，同时插入在半导体芯片（ 22）在它们之间。

16. 发明公开

EP1183759A1 HERMETICALLY SEALED SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：密封的半导体激光器件
公开(公告)号：EP1183759A1
公开(公告)日：2002-03-06
申请号：EP00926503.4
申请日：2000-05-02
申请人： Bandwidth9, Inc.
发明人： CHANG-HASNAIN, Constance, J. , DATO, Renato , WORLAND, Philip , YU, Rang-Chen
IPC分类号： H01S5/022 , H01L33/00
CPC分类号： H01S5/0222 , H01S5/0201 , H01S5/0208 , H01S5/02272 , H01S5/0228 , H01S5/18366
摘要： A wafer assembly that includes a wafer substrate. A plurality of micro-optomechanical or micro-optoelectrical devices are positioned on a surface of the wafer substrate. Each micro-optomechanical or micro-optoelectrical device has a seal surface. A plurality of seal caps are coupled to the micro-optomechanical or micro-optoelectrical devices. Each seal cap has a seal ring. The seal cap seal ring is coupled to a seal surface of the micro-optomechanical or micro-optoelectrical device to form a hermetic seal.

17. 发明公开

EP1081818A2 Semiconductor laser devices 失效
标题翻译： Halbleiterlaser-Vorrichtungen
公开(公告)号：EP1081818A2
公开(公告)日：2001-03-07
申请号：EP00122472.4
申请日：1996-09-17
申请人： Hitachi, Ltd.
发明人： Tanaka, Toshiaki , Aoki, Shigeru
IPC分类号： H01S5/34 , H01L33/00
CPC分类号： H01L33/025 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02387 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L33/007 , H01L33/16 , H01L33/20 , H01S5/0202 , H01S5/0205 , H01S5/0207 , H01S5/0208 , H01S5/0213 , H01S5/18319 , H01S5/18338 , H01S5/18341 , H01S5/1835 , H01S5/2077 , H01S5/223 , H01S5/227 , H01S5/2272 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S5/423 , H01S2304/12
摘要： An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insulating member (4) and the substrate (40) exposed by the opening thereby to form a semiconductor material (1, 5, 51, 52). A semiconductor material (6, 7) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.
摘要翻译：在衬底上形成部分地露出衬底（1; 1,2,3）的非晶结构的绝缘构件（4）。至少含有氮作为构成元素的化合物半导体（5,51,52）沉积在由开口露出的绝缘构件（4）和基板（40）上，形成半导体材料（5,5） 51，52）。由第一半导体材料构成或由第一半导体材料构成的半导体材料和在第一半导体材料上生长的另一半导体材料进行处理，从而形成半导体器件。

18. 发明授权

EP0487876B1 Monolithisch integrierte Laserdiode-Wellenleiter-Kombination 失效
标题翻译：单片集成激光二极管波导的组合。
公开(公告)号：EP0487876B1
公开(公告)日：1995-08-16
申请号：EP91117415.9
申请日：1991-10-11
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Thulke, Wolfgang, Dr.
IPC分类号： H01S3/085 , H01S3/103 , H01L27/15
CPC分类号： H01L27/15 , H01S5/0208 , H01S5/026 , H01S5/0425 , H01S5/06206 , H01S5/2275

19. 发明授权

EP0524459B1 Durchstimmbarer Halbleiterlaser auf semiisolierendem Substrat 失效
标题翻译：的半绝缘衬底上的可调半导体激光。
公开(公告)号：EP0524459B1
公开(公告)日：1995-06-14
申请号：EP92111168.8
申请日：1992-07-01
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Amann, Markus-Christian, Dr.-Ing. , Illek, Stefan, Dr.rer.nat. , Thulke, Wolfgang, Dr.rer.nat.
IPC分类号： H01S3/103 , H01S3/19
CPC分类号： H01S5/06206 , H01S5/0208 , H01S5/227 , H01S5/2275

20. 发明公开

EP0487876A2 Monolithisch integrierte Laserdiode-Wellenleiter-Kombination 失效
标题翻译：激光二极管 - 保护层组合。
公开(公告)号：EP0487876A2
公开(公告)日：1992-06-03
申请号：EP91117415.9
申请日：1991-10-11
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Thulke, Wolfgang, Dr.
IPC分类号： H01S3/085 , H01S3/103 , H01L27/15
CPC分类号： H01L27/15 , H01S5/0208 , H01S5/026 , H01S5/0425 , H01S5/06206 , H01S5/2275
摘要： Monolithisch integrierte Laserdiode-Wellenleiter-Kombination auf semiisolierendem Substrat (1), bei der in einem aktiven Bereich (A) eine Laserdiode mit einer Wellenleiterschicht (3), einer Zwischenschicht (4), einer aktiven Schicht (5) und einer Gitterschicht (6) zwischen Anteilen einer unteren Mantelschicht (10) angeordnet ist und oberhalb dieses Laserstreifens eine obere Mantelschicht (7) mit einer darauf befindlichen zentralen Kontaktschicht (8) und einem zentralen Kontakt (9) vorhanden ist und die Ansteuerung der aktiven Schicht (5) über die untere Mantelschicht (10), eine darauf aufgebrachte seitliche Kontaktschicht (11) und seitliche Kontakte (12) erfolgt.
摘要翻译：在半绝缘基板（1）上的单片集成的激光二极管 - 波导组合，其中在有源区（A）中，具有波导层（3），中间层（4），有源层（5））和在下包层（10）的部分之间设置光栅层（6）。在其上具有中央接触层（8）的上包层（7）和中心触点（9）。有源层（5）通过下覆盖层（10），沉积在其上的侧面接触层（11）和侧面触点（12）驱动。 ... ...

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