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1. 发明公开

EP3207601A2 OPTICAL TRANSMITTER WITH LINEAR ARRANGEMENT AND STACKED LASER PACKAGE AND RF PATH 有权
标题翻译：具有线性安排和堆叠激光器包装和射频路径的光学发射器
公开(公告)号：EP3207601A2
公开(公告)日：2017-08-23
申请号：EP15785030.6
申请日：2015-10-15
申请人： Cisco Technology, Inc.
发明人： PFNUER, Stefan , TRAVERSO, Matthew
IPC分类号： H01S3/00 , H01S5/022
CPC分类号： H04B10/503 , G02B6/4248 , G02B6/4281 , H01S5/02276 , H01S5/0228 , H04B10/516
摘要： Described herein is an optical transmitter that includes an RF signal path that is, at least partially, parallel with an optical signal path. In one embodiment, an electrical transmission element, which defines the RF signal path, is disposed between a laser emitting the optical signal and a side wall of a package containing the optical transmitter. Although the RF and optical signals may propagate along different planes within the optical transmitter, both signals are received at an optical modulator. Using the RF signal, the optical modulator modulates the optical signal (e.g., a continuous wave) to generate a modulated optical signal. The optical modulator then outputs the modulated signal to a receptacle coupled to a light carrying medium such as a fiber optic cable.
摘要翻译：这里描述的是一种光发射机，其包括至少部分地与光信号路径平行的RF信号路径。在一个实施例中，限定RF信号路径的电传输元件设置在发射光信号的激光器与包含光发射器的封装件的侧壁之间。尽管RF和光学信号可以沿着光学发射器内的不同平面传播，但是两个信号在光学调制器处被接收。使用RF信号，光学调制器调制光学信号（例如，连续波）以产生调制的光学信号。然后光调制器将调制信号输出到耦合到诸如光缆的携光介质的插座。

2. 发明公开

EP3220494A4 HIGH-POWER SEMICONDUCTOR LASER BASED ON VCSEL AND OPTICAL CONVERGENCE METHOD THEREFOR 无效
公开(公告)号：EP3220494A4
公开(公告)日：2018-07-11
申请号：EP14905924
申请日：2014-12-07
申请人： SANHE LASERCONN TECH CO LTD
发明人： LI YANG
IPC分类号： H01S5/42 , H01S5/00 , H01S5/022 , H01S5/024 , H01S5/40
CPC分类号： H01S5/18361 , H01S5/005 , H01S5/02252 , H01S5/0228 , H01S5/02469 , H01S5/4012 , H01S5/4043 , H01S5/423 , H01S5/426
摘要： Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved. The high-power semiconductor laser based on VCSEL has a wide application prospect in the laser medicine and industrial laser processing fields.

3. 发明公开

EP3264541A1 SOURCE LASER À SEMI-CONDUCTEUR 有权
标题翻译：激光源半导体
公开(公告)号：EP3264541A1
公开(公告)日：2018-01-03
申请号：EP17178538.9
申请日：2017-06-28
申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
发明人： SCIANCALEPORE, Corrado , CASALE, Marco
IPC分类号： H01S5/02 , H01S5/024 , H01S5/026 , H01S5/183 , H01S5/50
CPC分类号： H01S5/021 , H01S5/02252 , H01S5/02256 , H01S5/0228 , H01S5/02469 , H01S5/02476 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/3013 , H01S5/50
摘要： Source laser à semi-conducteur comportant :
- une couche structurée (6) formée sur un substrat (4) en silicium et présentant une face supérieure (14), cette couche structurée comportant :
• un composant optique passif (20) choisi dans le groupe composé d'un réflecteur optique et d'un guide d'onde, ce composant étant encapsulé dans de la silice ou réalisé sur une couche de silice, et
• au moins un plot (30) s'étendant depuis une face inférieure, en contact direct avec le substrat en silicium, jusqu'à une face supérieure affleurant la face supérieure de la couche structurée, ce plot étant entièrement réalisé en nitrure de silicium pour former un pont thermique à travers la couche structurée,

- un amplificateur optique (8) directement collé au-dessus du composant optique passif et en partie sur la face supérieure du plot pour dissiper la chaleur qu'il génère vers le substrat en silicium.
摘要翻译：一种半导体激光源，包括： - 在硅衬底（4）上形成并具有上表面（14）的结构化层（6），所述结构化层包括：·无源光学元件（20），选自其由光学反射器和波导组成，该部件被封装在二氧化硅中或者在二氧化硅层上制成，并且至少一个从下表面延伸的螺柱（30）接触直接与硅衬底接触，直至与结构化层的上表面齐平的上表面，该焊盘完全由氮化硅制成以形成穿过结构化层的热桥，直接光学放大器（8）胶粘在无源光学元件上并且部分地在螺柱的上表面上以将其产生的热量散发到硅基板。

4. 发明授权

EP2260234B1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：EP2260234B1
公开(公告)日：2017-05-03
申请号：EP08873446.2
申请日：2008-09-04
申请人： Kabushiki Kaisha Toshiba
发明人： HWANG, Jongil , SAITO, Shinji , NUNOUE, Shinya
IPC分类号： H01S5/022 , H01S5/22 , F21K9/61 , F21K9/64
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056

5. 发明公开

EP2260234A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：EP2260234A1
公开(公告)日：2010-12-15
申请号：EP08873446.2
申请日：2008-09-04
申请人： Kabushiki Kaisha Toshiba
发明人： HWANG, Jongil , SAITO, Shinji , NUNOUE, Shinya
IPC分类号： F21K7/00
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056
摘要： A light emitting device includes: a semiconductor laser element (10) having a first emission face for emitting laser light; a light guiding body (40) buried in the concave portion (20a) of the supporting base (20), guiding the laser light emitted from the semiconductor laser element (10), and having an incident face (40a) to which the laser light enters, and a second emission face (40b) from which the laser light traveling through the light guiding body (40) is emitted, the incident face (40a) of the light guiding body (40) being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance (42) scattered in the light guiding body (40), absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.
摘要翻译：发光装置包括：具有用于发射激光的第一发射面的半导体激光元件（10）埋设在支承台20的凹部20a内并对从半导体激光元件10射出的激光进行导光，并具有入射面40a的导光体40，和入射在所述导光体（40）中行进的所述激光的第二射出面（40b），所述导光体（40）的入射面（40a）为曲面，所述激光在由所述激光的行进方向和所述激光的发光点的短轴形成的平面内处于包括布鲁斯特角的预定范围内; 以及散射在所述导光体（40）中的荧光物质（42），所述荧光物质吸收所述激光并且发射具有与所述激光的波长不同的波长的光。

6. 发明公开

EP3220494A1 HIGH-POWER SEMICONDUCTOR LASER BASED ON VCSEL AND OPTICAL CONVERGENCE METHOD THEREFOR 无效
标题翻译：基于VCSEL的高功率半导体激光器及其光学收敛方法
公开(公告)号：EP3220494A1
公开(公告)日：2017-09-20
申请号：EP14905924.8
申请日：2014-12-07
申请人： Sanhe Laserconn Tech Co., Ltd.
发明人： LI, Yang
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , H01S5/005 , H01S5/02252 , H01S5/0228 , H01S5/02469 , H01S5/4012 , H01S5/4043 , H01S5/423 , H01S5/426
摘要： Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved. The high-power semiconductor laser based on VCSEL has a wide application prospect in the laser medicine and industrial laser processing fields.
摘要翻译：提供了一种基于VCSEL的高功率半导体激光器，包括VCSEL激光器模块。 VCSEL激光模块包括由多个VCSEL芯片（10）组成的VCSEL芯片阵列（1）和布置在VCSEL芯片阵列（1）的光出射面之前的内壁反射光学传输装置（2））; 并且VCSEL芯片阵列（1）的出光面用于二次反射由目标物体（3）和内壁反射光学传输装置（2）反射的反射光。还提供了用于高功率半导体激光器的封装结构。 VCSEL芯片阵列（1）由向内凹陷的弧形散热器（4）封装，从而可以实现将激光束会聚在中心位置附近的目的。基于VCSEL的高功率半导体激光器在激光医疗和工业激光加工领域具有广阔的应用前景。

7. 发明公开

EP2597735A3 Laser light source device 有权
标题翻译：激光光源装置
公开(公告)号：EP2597735A3
公开(公告)日：2017-09-20
申请号：EP12007821.7
申请日：2012-11-20
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Koike, Teruo , Liang, Ji-Hao
IPC分类号： H01S5/022
CPC分类号： F21V13/04 , H01S5/0092 , H01S5/02212 , H01S5/0228 , H01S5/02288
摘要： In an exemplary embodiment, a laser light source device includes a laser light source that emits laser light from a laser emission aperture. The laser light source device also includes a condenser lens disposed in front of the laser light source in a laser emission direction to collect the laser light. The laser light source device also includes a fluorescent member disposed in front of the condenser lens in the laser emission direction to receive the laser light collected by the condenser lens and to emit light of a different wavelength from that of the laser light. The laser light source device also includes a light guide that forms a light path of laser light from the laser light source to the condenser lens.
摘要翻译：在示例性实施例中，激光光源装置包括从激光发射孔发射激光的激光光源。激光光源装置还包括聚光透镜，其沿激光发射方向设置在激光光源的前方以收集激光。激光光源装置还包括在激光发射方向上设置在聚光透镜前方的荧光部件，以接收由聚光透镜聚集的激光并发射与激光不同波长的光。激光光源装置还包括光导，该光导形成从激光光源到聚光透镜的激光的光路。

8. 发明公开

EP3217065A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：EP3217065A1
公开(公告)日：2017-09-13
申请号：EP17168986.2
申请日：2008-09-04
申请人： Kabushiki Kaisha Toshiba
发明人： Hwang, Jongil , Saito, Shinji , Nunoue, Shinya
IPC分类号： F21K9/61 , H01S5/04 , H01S5/00
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056
摘要： A light emitting device comprising:
a) a semiconductor laser element (10) having a emission face for emitting laser light (13);
b) a supporting base (20) having a concave portion (20a) on a surface, the supporting base (20) supporting the semiconductor laser element (10) in such a manner that the emission face of the semiconductor laser element (10) is exposed to a bottom face of the concave portion (20a);
c) a light guiding body (40) buried in the concave portion (20a) of the supporting base (20), the light guiding body (40) guiding a laser light (13) emitted from the semiconductor laser element (10), the light guiding body (40) having an incident face (40a) to which the laser light (13) enters, the light guiding body (40) having an emission face (40b) from which the laser light (13) travelling through the light guiding body (40) is emitted, the incident face (40a) of the light guiding body (40) being such a curved face that an incident angle of the laser light (13) is within a predetermined range including the Brewster angle in a plane formed by a travelling direction of the laser light (13) and a short axis of a light emitting spot of the laser light (13) ;
d) a fluorescent substance (42a, 42b) scattered in the light guiding body (40), the fluorescent substance (42a, 42b) formed with two or more layer-like structures, the fluorescent substance (42a, 42b) absorbing the laser light (13) and emitting the light having a different wavelength from a wavelength of the laser light (13).
摘要翻译：一种发光装置，包括：a）具有用于发射激光的发射面的半导体激光元件（10）; b）在表面上具有凹部（20a）的支撑基座（20），所述支撑基座（20）以所述半导体激光元件（10）的出射面为暴露于凹入部分（20a）的底面; c）埋设在所述支承台20的所述凹部20a内的导光体40，所述导光体40对从所述半导体激光元件10射出的激光13进行导光，具有入射面（40a）的导光体（40），所述激光（13）进入所述入射面（40a），所述导光体（40）具有发射面（40b），激光（13）穿过所述发射面（40）的入射面（40a）是曲面，使得激光（13）的入射角在包括布鲁斯特角的预定范围内形成在所形成的平面内通过所述激光（13）的行进方向和所述激光（13）的光发射点的短轴; （d）散布在导光体（40）内的荧光体（42a，42b），荧光体（42a，42b）由两层以上的层状结构构成，荧光体（42a，42b）吸收激光（13）并且发射具有与激光（13）的波长不同的波长的光。

9. 发明授权

EP1349243B1 Optical device, method of manufacturing the same, optical module, optical transmission system 有权
标题翻译：光学装置及其制造方法，光模块和光传输系统
公开(公告)号：EP1349243B1
公开(公告)日：2008-04-30
申请号：EP03006807.6
申请日：2003-03-26
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Ishida, Kaoru , Korenaga, Tsuguhiro
IPC分类号： H01S5/022 , H01S5/024 , H01L33/00 , H01L23/13 , G02B6/42 , H05K1/02
CPC分类号： H01S5/02252 , H01L2224/48091 , H01L2224/48227 , H01S5/0226 , H01S5/02276 , H01S5/0228 , H01S5/024 , H01S5/02438 , H01S5/4087 , H01L2924/00014

10. 发明公开

EP1183759A1 HERMETICALLY SEALED SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：密封的半导体激光器件
公开(公告)号：EP1183759A1
公开(公告)日：2002-03-06
申请号：EP00926503.4
申请日：2000-05-02
申请人： Bandwidth9, Inc.
发明人： CHANG-HASNAIN, Constance, J. , DATO, Renato , WORLAND, Philip , YU, Rang-Chen
IPC分类号： H01S5/022 , H01L33/00
CPC分类号： H01S5/0222 , H01S5/0201 , H01S5/0208 , H01S5/02272 , H01S5/0228 , H01S5/18366
摘要： A wafer assembly that includes a wafer substrate. A plurality of micro-optomechanical or micro-optoelectrical devices are positioned on a surface of the wafer substrate. Each micro-optomechanical or micro-optoelectrical device has a seal surface. A plurality of seal caps are coupled to the micro-optomechanical or micro-optoelectrical devices. Each seal cap has a seal ring. The seal cap seal ring is coupled to a seal surface of the micro-optomechanical or micro-optoelectrical device to form a hermetic seal.

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