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11. 发明公开

EP3021357A1 METHOD OF JOINING A SEMICONDUCTOR ELEMENT TO A JOINED MEMBER BY REACTING A TIN-CONTAINING SOLDER MATERIAL WITH A COPPER LAYER ON THE JOINED MEMBER AND CORRESPONDING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： METHOD FOR连接半导体组件与组件连接由于反应PEAKS THAL Tenden焊料材料与铜层上的连接部件和适当的半导体器件
公开(公告)号：EP3021357A1
公开(公告)日：2016-05-18
申请号：EP15192112.9
申请日：2015-10-29
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： KADOGUCHI, Takuya , YANAGIMOTO, Hiroshi , HIRAOKA, Motoki
IPC分类号： H01L23/492 , H01L23/488 , H01L21/60
CPC分类号： H01L24/16 , B23K35/262 , C22C13/00 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L2224/04026 , H01L2224/05155 , H01L2224/05647 , H01L2224/16245 , H01L2224/16502 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33181 , H01L2224/81805 , H01L2224/83447 , H01L2224/8381 , H01L2224/83815 , H01L2924/014 , H01L2924/181 , H01L2924/01029 , H01L2924/00014 , H01L2924/01028 , H01L2924/01015 , H01L2924/01083 , H01L2924/01051 , H01L2924/01047 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device (100) includes: arranging a solder material (4) containing at least tin between a semiconductor element (6) and a joined member (2) provided with a nickel layer (2a) and a copper layer (22) such that the solder material (4) is in contact with the copper layer (22), the nickel layer (2a) being provided on a surface of the joined member (2), and the copper layer (22) being provided on at least a portion of a surface of the nickel layer (2a); and melting and solidifying the solder material (4) to form Cu 6 Sn 5 (4b) on the surface of the nickel layer (2a) using tin of the solder material (4) and the copper layer (22). The solder material (4) may be a tin solder or a tin-copper solder, preferably a Sn-0.7Cu solder.
摘要翻译：一种制造半导体器件（100）的方法，包括：布置（4）含有具有镍层（2a）的半导体元件（6）和一个接合件（2）和铜层之间的至少锡的焊料材料（ 22）检查确实设置在所述钎焊材料（4）是（与铜层22接触），镍层（2a）中设置接合构件（2）的表面上，和铜层（22）至少镍层（2a）的一个表面的一部分; 和熔化和固化焊料材料（4），以形成的Cu 6 Sn的5（4b）中使用焊料材料（4）和铜层（22）的锡镍层（2a）的表面上。钎焊材料（4）可以是锡焊料或锡 - 铜焊料，优选具有Sn-0.7Cu钎焊料。

12. 发明公开

EP2980281A1 APPARATUS AND METHOD FOR FORMING METAL COATING FILM 有权
标题翻译：用于形成金属涂层膜的装置和方法
公开(公告)号：EP2980281A1
公开(公告)日：2016-02-03
申请号：EP14774595.4
申请日：2014-02-04
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SATO, Yuki , HIRAOKA, Motoki , YANAGIMOTO, Hiroshi
IPC分类号： C25D17/00 , C25D7/12 , C25D3/00 , C25D17/10
CPC分类号： C25D5/00 , C25D3/00 , C25D3/38 , C25D7/00 , C25D17/00 , C25D17/002 , C25D17/10 , C25D17/12
摘要： To provide a film formation apparatus and a film formation method for forming a metal film that can continuously form metal films with desired thickness on the surfaces of a plurality of substrates, and increase the film forming speed while suppressing abnormality of the metal films. A film formation apparatus includes an anode (11); a solid electrolyte membrane (13) disposed between the anode and a substrate (B) serving as a cathode such that a metal ion solution (L) is disposed on the anode (11) side thereof; and a power supply portion (14) adapted to apply a voltage across the anode (11) and the substrate (B). A voltage is applied across the anode (11) and the substrate (B) to deposit metal out of the metal ions contained in the solid electrolyte membrane (13) onto the surface of the substrate (B), thereby forming a metal film (F) made of the metal of the metal ions. The anode (11) has a base material (11a), which is insoluble in the metal ion solution (L), and a metal plating film (11c), which is made of the same metal as the metal film (F), formed over the base material (11a).
摘要翻译：本发明提供一种成膜装置和成膜方法，其能够在多个基板的表面上连续形成所希望的厚度的金属膜，并且能够抑制金属膜的异常并提高成膜速度。成膜装置包括阳极（11）; 配置在阳极与作为阴极的基板（B）之间，在阳极（11）侧配置金属离子溶液（L）的固体电解质膜（13）和适于在阳极（11）和衬底（B）上施加电压的电源部分（14）。在阳极（11）和基板（B）之间施加电压，使固体电解质膜（13）中含有的金属离子中的金属析出到基板（B）的表面，形成金属膜（F ）由金属离子的金属制成。阳极（11）具有不溶于金属离子溶液（L）的基材（11a）和由与金属膜（F）相同的金属构成的金属镀膜（11c）覆盖基材（11a）。

13. 发明公开

EP2818585A1 FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM 有权
标题翻译： FILMBILDUNGSVORRICHTUNG电影电视节目ZUR HERSTELLUNG VON METALLSCHICHTEN
公开(公告)号：EP2818585A1
公开(公告)日：2014-12-31
申请号：EP13751478.2
申请日：2013-02-21
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki , YOSHIOKA, Takayasu
IPC分类号： C25D17/12 , C25D17/14
摘要： Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed. The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.
摘要翻译：提供一种用于形成金属膜的成膜装置和成膜方法，可以在多个基板的表面上连续地形成具有所需厚度的金属膜。成膜装置1A至少包括正极11，负极12，布置在正极12的表面上的固体电解质膜13，正极和基板之间用作负极，功率供给单元E适于在正电极11和基板B两端施加电压。在正电极11和基板B两端施加电压，以将固体电解质膜13中所含的金属离子上的金属沉积在基板的表面上由此形成由金属制成的金属膜F. 正极11由允许包含金属离子的溶液L通过并将金属离子供给固体电解质膜13的多孔体制成。

14. 发明公开

EP4095870A1 METHOD FOR MANUFACTURING HALBACH MAGNET ARRAY 有权
公开(公告)号：EP4095870A1
公开(公告)日：2022-11-30
申请号：EP22175553.1
申请日：2022-05-25
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KANADA, Keiu , SAKAGUCHI, Reimi , ITO, Masaaki , NOMURA, Takuya , ICHIGOZAKI, Daisuke , HIRAOKA, Motoki , AKITA, Mitsutoshi
IPC分类号： H01F7/02 , H01F13/00 , H01F41/02
摘要： The method for manufacturing the Halbach magnet array includes the steps of: (a) magnetizing at least two first magnetic material pieces in a direction parallel to a first direction, and (b) magnetizing at least one second magnetic material piece in a direction parallel to a second direction perpendicular to the first direction, in this order. In the step (a), the first magnetic material pieces and the second magnetic material piece are alternately arranged in the second direction with the first magnetic material pieces being each adhered to the adjacent second magnetic material piece, and the magnetization is performed under a condition in which a residual magnetization ratio rl of the first magnetic material pieces is higher than a residual magnetization ratio r2 of the second magnetic material piece.

15. 发明授权

EP3037571B1 METAL-FILM FORMING APPARATUS AND METAL-FILM FORMING METHOD 有权
公开(公告)号：EP3037571B1
公开(公告)日：2020-07-22
申请号：EP15202454.3
申请日：2015-12-23
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki
IPC分类号： C25D3/00 , C25D5/02 , C25D17/00 , C25D17/14 , H05K3/00

16. 发明授权

EP3036357B1 FILM FORMATION METHOD FOR FORMING METAL FILM 有权
公开(公告)号：EP3036357B1
公开(公告)日：2018-07-11
申请号：EP14789355.6
申请日：2014-08-20
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki
IPC分类号： C25D5/08 , C25D17/00 , C25D17/12 , C25D21/04 , C25D3/00
CPC分类号： C25D5/04 , C25D3/00 , C25D5/08 , C25D5/22 , C25D17/00 , C25D17/002 , C25D17/007 , C25D17/12 , C25D17/14 , C25D21/04
摘要： A solid electrolyte membrane (13) is arranged on a surface of an anode (11) between the anode (11) and a substrate (B) that serves as a cathode. The solid electrolyte membrane (13) is brought into contact with the substrate (B). At the same time, a metal film (F) is formed on the surface of the substrate (B) by causing metal to precipitate onto the surface of the substrate (B) from metal ions through application of voltage between the anode (11) and the substrate (B) in a first contact state where the solid electrolyte membrane (13) contacts the substrate (B). The metal ions are contained inside the solid electrolyte membrane (13).

17. 发明公开

EP3249081A1 FILM FORMING METHOD FOR METAL FILM AND FILM FORMING APPARATUS THEREFOR 有权
标题翻译：金属膜的成膜方法及其成膜装置
公开(公告)号：EP3249081A1
公开(公告)日：2017-11-29
申请号：EP17171596.4
申请日：2017-05-17
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SATO, Yuki , HIRAOKA, Motoki , IISAKA, Hirofumi
IPC分类号： C25D3/00 , C25D5/06 , C25D17/00 , C25D17/14 , C25D17/06
CPC分类号： C25D3/00 , C25D3/38 , C25D5/06 , C25D17/004 , C25D17/005 , C25D17/06 , C25D17/14
摘要： In a film forming method, in a state where a metal solution (L) is sealed in a first accommodation chamber (21) of a housing (20) with a solid electrolyte membrane (13) and a fluid (45) is sealed in a second accommodation chamber (41) of a placing table (40) with a thin film (43), a substrate (B) is placed on the placing table (40) and the placing table (40) and the housing (20) are moved relative to each other to cause the substrate (B) to be interposed between the solid electrolyte membrane (13) and the thin film (43), the solid electrolyte membrane (13) and the thin film (43) are pressed against the substrate (B) interposed therebetween to cause the solid electrolyte membrane (13) and the thin film (43) to conform to a surface (Ba) and a rear surface (Bb) of the substrate (B), thereby forming a metal film (F).
摘要翻译：在成膜方法中，在利用固体电解质膜（13）将金属溶液（L）密封在壳体（20）的第一容纳室（21）中并且将流体（45）密封在（40）的第二容纳室（41）与基板（B）放置在放置台（40）上并且放置台（40）和外壳（20）移动（B）夹在固体电解质膜（13）和薄膜（43）之间，固体电解质膜（13）和薄膜（43）相对于基板 B），使固体电解质膜（13）和薄膜（43）与基板（B）的表面（Ba）和背面（Bb）一致，由此形成金属膜（F）。

18. 发明公开

EP2977488A1 FILM-FORMING METAL SOLUTION AND METAL FILM-FORMING METHOD 审中-公开
标题翻译： FILMBILDENDEMETALLLÖSUNGUND METALLFILMBILDUNGSVERFAHREN
公开(公告)号：EP2977488A1
公开(公告)日：2016-01-27
申请号：EP15177944.4
申请日：2015-07-22
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： HIRAOKA, Motoki , YANAGIMOTO, Hiroshi , SATO, Yuki , AKAMATSU, Kensuke
IPC分类号： C25D3/00 , C25D3/02 , C25D5/08
CPC分类号： C25D3/12 , C25D3/00 , C25D3/02 , C25D5/08
摘要： A film-forming metal solution for supplying metal ions to a solid electrolyte membrane in film formation is provided. In the film formation, the solid electrolyte membrane is disposed between an anode and a substrate as a cathode, and the solid electrolyte membrane is brought into contact with the substrate and a voltage is placed between the anode and the substrate to precipitate a metal on a surface of the substrate from the metal ions contained in the solid electrolyte membrane, so that a metal film of the metal is formed on the surface of the substrate. The film-forming metal solution contains a solvent, and the metal dissolved in the solvent in an ionic state. A hydrogen ion concentration of the film-forming metal solution is within a range of 0 to 10 -7.85 mol/L at 25°C.
摘要翻译：提供了一种用于在成膜中将固体电解质膜提供金属离子的成膜金属溶液。在成膜中，将固体电解质膜设置在阳极和基板之间作为阴极，并使固体电解质膜与基板接触，并且在阳极和基板之间放置电压以将金属沉积在由固体电解质膜中所含的金属离子形成基板表面，从而在基板的表面上形成金属的金属膜。成膜金属溶液含有溶剂，溶解在溶剂中的金属处于离子状态。成膜金属溶液的氢离子浓度在25℃下为0〜10 -7.85摩尔/升的范围。

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