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    • 103. 发明公开
    • Semiconductor Light Emitting Device Having Current Blocking Layer
    • Lichtemittierende Halbleitervorrichtung mit Stromsperrschicht
    • EP2528113A1
    • 2012-11-28
    • EP12169466.5
    • 2012-05-25
    • Samsung LED Co., Ltd.
    • Lee, Wan Ho
    • H01L33/14H01L33/38
    • H01L33/387H01L33/14
    • There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.
    • 提供一种半导体发光器件,包括:包含第一导电半导体层,第二导电半导体层和插入其间的有源层的半导体发光层叠体; 第一电极,其具有形成在所述第一导电半导体层的上表面的一部分上的至少一个焊盘; 具有形成在所述第二导电半导体层上的欧姆接触层的第二电极; 以及在第二导电半导体层和欧姆接触层之间的电流阻挡层,其上形成有多个图案,所述多个图案被排列成使得与与焊盘重叠的区域相邻的图案之间的间隔小于图案之间的间隔 的另一个地区。
    • 106. 发明公开
    • Vapor deposition system
    • Aufdampfungssystem
    • EP2508654A1
    • 2012-10-10
    • EP12004939.0
    • 2010-11-03
    • Samsung LED Co., Ltd.
    • Lee, Dong JuShim, Hyun WookLee, Heon HoKim, Young SunKim, Sung Tae
    • C30B25/14C30B29/40C23C16/54C23C16/455
    • C23C16/54C23C16/45563C30B23/02C30B25/14C30B29/40H01L21/0254H01L21/0262H01L33/007
    • There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.
      When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
    • 提供了一种气相沉积系统,一种制造发光器件的方法和一种发光器件。 根据本发明的一个方面的气相沉积系统可以包括:具有第一基座和至少一个气体分配器的第一腔室,其沿与平行于设置在第一基座上的衬底平行的方向排出气体; 以及第二室,具有第二基座和布置在第二基座上方的至少一个第二气体分配器,以向下排放气体。 当使用根据本发明的一个方面的气相沉积系统时,由此生长的半导体层具有优异的结晶质量,从而提高了发光器件的性能。 此外,虽然改善了气相沉积系统的操作能力和生产率,但是可以防止装置的劣化。