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1. 发明公开

EP2475016A2 Method of manufacturing light emitting diode and light emitting diode manufactured thereby 有权转让
标题翻译： Verfahren zur Herstellung einer Leuchtdiode
公开(公告)号：EP2475016A2
公开(公告)日：2012-07-11
申请号：EP12150121.7
申请日：2012-01-04
申请人： Samsung LED Co., Ltd.
发明人： Lee, Dong Ju , Lee, Heon Ho , Shim, Hyun Wook , Kim, Young Sun
IPC分类号： H01L33/32
CPC分类号： H01L33/0075 , H01L33/007 , H01L33/32
摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer (102) and an undoped nitride semiconductor layer (103) on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer (104) on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.
摘要翻译：提供了一种制造发光二极管的方法和由其制造的发光二极管。该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层（102）和未掺杂氮化物半导体层（103）; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层（104）; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

2. 发明公开

EP2508654A1 Vapor deposition system 审中-公开
标题翻译： Aufdampfungssystem
公开(公告)号：EP2508654A1
公开(公告)日：2012-10-10
申请号：EP12004939.0
申请日：2010-11-03
申请人： Samsung LED Co., Ltd.
发明人： Lee, Dong Ju , Shim, Hyun Wook , Lee, Heon Ho , Kim, Young Sun , Kim, Sung Tae
IPC分类号： C30B25/14 , C30B29/40 , C23C16/54 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.
When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了一种气相沉积系统，一种制造发光器件的方法和一种发光器件。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分配器的第一腔室，其沿与平行于设置在第一基座上的衬底平行的方向排出气体; 以及第二室，具有第二基座和布置在第二基座上方的至少一个第二气体分配器，以向下排放气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，从而提高了发光器件的性能。此外，虽然改善了气相沉积系统的操作能力和生产率，但是可以防止装置的劣化。

3. 发明公开

EP2360297A2 Vapor deposition system, method of manufacturing light emitting device and light emitting device 有权转让
标题翻译：气相沉积系统，制造发光装置的方法和发光装置
公开(公告)号：EP2360297A2
公开(公告)日：2011-08-24
申请号：EP10189828.6
申请日：2010-11-03
申请人： Samsung LED Co., Ltd.
发明人： Lee, Dong Ju , Shim, Hyun Wook , Lee, Heon Ho , Kim, Young Sun , Kim, Sung Tae
IPC分类号： C30B25/14 , C30B29/40 , C23C16/54 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.
When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.
摘要翻译：提供了一种气相沉积系统，制造发光装置的方法以及发光装置。根据本发明的一个方面的气相沉积系统可以包括：具有第一基座和至少一个气体分配器的第一腔室，该气体分配器在与设置在第一基座上的基板平行的方向上排放气体; 以及具有第二基座和至少一个第二气体分配器的第二腔室，所述第二气体分配器设置在所述第二基座上方以向下排出气体。当使用根据本发明的一个方面的气相沉积系统时，由此生长的半导体层具有优异的结晶质量，由此改善了发光器件的性能。此外，虽然气相沉积系统的操作能力和生产率得到改善，但可以防止设备的劣化。

4. 发明公开

EP2360297A3 Vapor deposition system, method of manufacturing light emitting device and light emitting device 有权转让
标题翻译：气相沉积系统，一种用于制造发光器件和发光器件的方法
公开(公告)号：EP2360297A3
公开(公告)日：2011-10-19
申请号：EP10189828.6
申请日：2010-11-03
申请人： Samsung LED Co., Ltd.
发明人： Lee, Dong Ju , Shim, Hyun Wook , Lee, Heon Ho , Kim, Young Sun , Kim, Sung Tae
IPC分类号： C30B25/14 , C30B29/40 , C23C16/54 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards.
When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an apparatus can be prevented.

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