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91. 发明公开

EP2348536A2 Method and apparatus for use in approving linearity of MOSFETs using an accumulated charge sink 审中-公开
标题翻译：用于使用水槽为累积电荷批准MOSFET的线性度的方法和装置
公开(公告)号：EP2348536A2
公开(公告)日：2011-07-27
申请号：EP11153313.9
申请日：2006-07-11
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Brindle, Christopher N. , Stuber, Michael A. , Kelly, Dylan J. , Kemerling, Clint , Imthurn, George P. , Welstand, Robert B. , Burgener, Mark L.
IPC分类号： H01L29/786 , H01P1/15
CPC分类号： H03K17/162 , H01L29/0649 , H01L29/1095 , H01L29/78609 , H01L29/78615 , H01L29/78681 , H01L29/78684 , H03K17/687 , H03K2217/0018
摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.
摘要翻译：累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），angepasst以控制MOSFET当MOSFET在累积电荷制度操作中的非线性响应，其包括：a）具有浮体，worin浮体MOSFET的MOSFET 选择性地操作在累积电荷制度，和worin积累的电荷存在于浮体MOSFET当MOSFET中的累积电荷制度操作的主体; 和b）累积的电荷接收器（ACS）操作地耦合到所述MOSFET的体，所述worin ACS除去或以其它方式的控制中的MOSFET的体积累的电荷。

92. 发明公开

EP2348533A2 Apparatus for use in improving linearity of MOSFETs using an accumulated charge sink 审中-公开
标题翻译：用于改善使用累积电荷阱的MOSFET的线性度的装置
公开(公告)号：EP2348533A2
公开(公告)日：2011-07-27
申请号：EP11153241.2
申请日：2006-07-11
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Brindle, Christopher, N. , Stuber, Michael, A. , Kelly, Dylan, J. , Kemerling, Clint, L. , Imthurn, George, P. , Welstand, Robert, B. , Burgener, Mark, L.
IPC分类号： H01L29/786 , H01P1/15
CPC分类号： H03K17/162 , H01L29/0649 , H01L29/1095 , H01L29/78609 , H01L29/78615 , H01L29/78681 , H01L29/78684 , H03K17/687 , H03K2217/0018
摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.
摘要翻译：一种累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），适用于在MOSFET工作在累积充电状态时控制MOSFET的非线性响应，包括：a）具有浮体的MOSFET，其中浮体MOSFET 选择性地在累积充电状态下操作，并且其中当MOSFET在累积充电状态下操作时，积聚电荷存在于浮体MOSFET的主体中; 和b）可操作地耦合到MOSFET的主体的累积电荷汇（ACS），其中ACS去除或以其他方式控制MOSFET主体中的累积电荷。

93. 发明公开

EP2348532A2 Apparatus for use in improving linearity of Mosfets using an accumulated charge sink 审中-公开
标题翻译：装置用于改善MOSFET的使用具有电荷的积累水槽的线性
公开(公告)号：EP2348532A2
公开(公告)日：2011-07-27
申请号：EP11153227.1
申请日：2006-07-11
申请人： PEREGRINE SEMICONDUCTOR CORPORATION
发明人： Brindle, Christopher, N. , Stuber, Michael, A. , Kelly, Dylan, J. , Kemerling, Clint, L. , Imthurn, George, P. , Welstand, Robert, B. , Burgener, Mark, L.
IPC分类号： H01L29/786 , H01P1/15
CPC分类号： H03K17/162 , H01L29/0649 , H01L29/1095 , H01L29/78609 , H01L29/78615 , H01L29/78681 , H01L29/78684 , H03K17/687 , H03K2217/0018
摘要： An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising:
a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and
b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.
摘要翻译：累积电荷控制（ACC）浮体MOSFET（ACC MOSFET），angepasst以控制MOSFET当MOSFET在累积电荷制度操作中的非线性响应，其包括：a）具有浮体，worin浮体MOSFET的MOSFET 选择性地操作在累积电荷制度，和worin积累的电荷存在于浮体MOSFET当MOSFET中的累积电荷制度操作的主体; 和b）累积的电荷接收器（ACS）操作地耦合到所述MOSFET的体，所述worin ACS除去或以其它方式的控制中的MOSFET的体积累的电荷。

94. 发明公开

EP2320514A1 Single pole multi throw switch 审中-公开
标题翻译： Einzelpol-Mehrfachumschalter
公开(公告)号：EP2320514A1
公开(公告)日：2011-05-11
申请号：EP10188897.2
申请日：2010-10-26
申请人： Infineon Technologies AG
发明人： Ilkov, Nikolay
IPC分类号： H01P1/15 , H03K19/0185
CPC分类号： H01P1/15 , H03K17/693
摘要： A single pole multi throw switch comprises a first switching unit, a second switching unit coupled to a common port and comprising a parasitic off state capacitance, and a matching unit. The matching unit may be coupled between the first switching unit and the common port, wherein the matching unit is configured to contribute, in conjunction with the parasitic off state capacitance of the second switching unit, to an impedance match if the first switching unit is active and the second switching unit is inactive.
摘要翻译：单极多掷开关包括第一开关单元，耦合到公共端口并包括寄生偏置电容的第二开关单元和匹配单元。匹配单元可以耦合在第一开关单元和公共端口之间，其中匹配单元被配置为如果第一开关单元处于活动状态，则与第二开关单元的寄生关断状态电容一起贡献于阻抗匹配并且第二切换单元是无效的。

95. 发明公开

EP1427114A4 HIGH-FREQUENCY COMPOSITE SWITCH MODULE 审中-公开
标题翻译：复合高频开关模块
公开(公告)号：EP1427114A4
公开(公告)日：2010-09-29
申请号：EP02762930
申请日：2002-08-30
申请人： PANASONIC CORP
发明人： SATOH YUKI , KUSHITANI HIROSHI , SASAKI RIHO , MITA NARIHIRO
IPC分类号： H01P1/15 , H04B1/40 , H04B1/44 , H04B1/48
CPC分类号： H04B1/006 , H04B1/406 , H04B1/48

96. 发明公开

EP2197120A3 High-frequency module and wireless communication device 有权
标题翻译：高频模块和无线通信设备
公开(公告)号：EP2197120A3
公开(公告)日：2010-08-04
申请号：EP10002188.0
申请日：2001-03-15
申请人： Hitachi Metals, Ltd.
发明人： Watanabe, Mitsuhiro , Kemmochi, Shigeru , Taketa, Tsuyoshi , Tai, Hiroyuki , Yokouchi, Satoru
IPC分类号： H04B1/52 , H01P1/15 , H03H7/46 , H04B1/04
CPC分类号： H01P1/15 , H01L2223/6677 , H01L2224/16225 , H01L2924/19105 , H03H7/46 , H03H2001/0085 , H04B1/52
摘要： A high-frequency composite part is connected among a transmitting circuit, a receiving circuit and an antenna, and comprises a high-frequency amplifier between the antenna and the transmitting circuit and a distributed constant line between the antenna and the receiving circuit. The high-frequency amplifier comprises a matching circuit comprising inductors and capacitors, and a transistor. The high-frequency amplifier and said distributed constant line are integrated in a multi-layered module constituted by a plurality of dielectric layers.
摘要翻译：高频复合部分连接在发射电路，接收电路和天线之间，并且包括天线和发射电路之间的高频放大器以及天线和接收电路之间的分布常数线。高频放大器包括包含电感器和电容器的匹配电路以及晶体管。高频放大器和所述分布常数线集成在由多个介电层构成的多层模块中。

97. 发明授权

EP1554814B1 TRANSMIT AND RECEIVE ANTENNA SWITCH 失效转让
标题翻译：发射和接收天线开关
公开(公告)号：EP1554814B1
公开(公告)日：2009-11-18
申请号：EP03748397.1
申请日：2003-09-19
申请人： NXP B.V.
发明人： DE GRAAUW, Antonius, J., M.
IPC分类号： H04B1/44 , H01P1/15
CPC分类号： H04B1/48 , H01P1/15
摘要： Antenna switches (1,10) in dual-band or multi-band mobile phones are according to a basic idea provided with a serial semiconductor switch (11,21,12,22) per transmitting branch (2,3) and with a further semiconductor switch (13,23) coupled in parallel to a receiving branch (4,5,6), to obtain isolation between branches (2-6) in a simple way. Said semiconductor switches are PIN diodes or MEMS switches or pHEMT switches. Another semiconductor switch (14) coupled in parallel to the receiving branches (4-6) allows together with said further semiconductor (13) the introduction of elements (15,16) without a transmission line. Alternatively, the antenna switch (1,10) may comprise a transmission line (24,25), in which case the receiving branches (4,5,6) can be switched via transistor switches (26,27,28). This all improves isolation, reduces costs, complexity, size and high Radio-Frequency (RF) losses.

98. 发明公开

EP1303055A4 THREE-FREQUENCY BRANCHING CIRCUIT, BRANCHING CIRCUIT, AND RADIO COMMUNICATION DEVICE 审中-公开
标题翻译：三率连接电路连接电路和无线电通信设备
公开(公告)号：EP1303055A4
公开(公告)日：2009-11-04
申请号：EP01941222
申请日：2001-06-25
申请人： PANASONIC CORP
发明人： YAMADA TORU , MATSUMURA TSUTOMU , ISHIZAKI TOSHIO , NAKAMURA HIROYUKI , URIU KAZUHIDE
IPC分类号： H01P1/15 , H04B1/40 , H04B1/44 , H04W88/06
CPC分类号： H04B1/0057 , H01P1/15 , H04B1/005 , H04B1/006 , H04B1/406 , H04B1/44

99. 发明授权

EP1501151B1 High frequency switch and electronic device containing the same 有权
标题翻译：高频开关和提供电子设备
公开(公告)号：EP1501151B1
公开(公告)日：2009-04-15
申请号：EP04015788.5
申请日：2004-07-05
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Nakano, Hiroyuki
IPC分类号： H01P1/15
CPC分类号： H01P1/15

100. 发明公开

EP2003788A1 HIGH FREQUENCY PART 有权
标题翻译： HOCHFREQUENZELEMENT
公开(公告)号：EP2003788A1
公开(公告)日：2008-12-17
申请号：EP08703453.4
申请日：2008-01-18
申请人： Murata Manufacturing Co. Ltd.
发明人： UEJIMA, Takanori
IPC分类号： H04B1/50 , H01P1/15 , H03H7/075 , H03H7/46
CPC分类号： H01P1/2135 , H01P1/15 , H01P1/213 , H03H7/0115 , H03H7/175 , H03H7/1758 , H03H7/1766 , H03H7/46 , H03H2001/0085 , H03H2250/00 , H04B1/005
摘要： There is provided a high-frequency component in which, even when a SAW filter is provided in a low-frequency circuit and there is an impedance mismatch, high-frequency transmission characteristics are not degraded. The high-frequency component includes a diplexer (1) in which a high-pass filter (102) and a low-pass filter (101) are connected in parallel with an antenna port, a high-frequency circuit cascaded to the high-pass filter (102), and a low-frequency circuit cascaded to the low-pass filter (101). A filter which causes an impedance mismatch to occur is connected to the low-frequency circuit. The low-pass filter (101) includes a line (Lt1). The low-pass filter (101) is constituted by a parallel resonant circuit (101A) including the line (Lt1) and a series circuit (101B) including the line (Lt1). A resonance frequency of the parallel resonant circuit (101A) is a trap frequency of a high-frequency transmission/reception signal. A frequency of resonance of all elements of the low-pass filter (101) is a trap frequency of undesired resonance that occurs at high frequencies.
摘要翻译：提供了一种高频分量，其中即使在低频电路中设置SAW滤波器并且存在阻抗失配，高频传输特性也不会降低。高频分量包括双工器（1），其中高通滤波器（102）和低通滤波器（101）与天线端口并联连接，高频电路级联到高通滤波器（102）和级联到低通滤波器（101）的低频电路。导致发生阻抗失配的滤波器连接到低频电路。低通滤波器（101）包括线（Lt1）。低通滤波器（101）由包括线路（Lt1）的并行谐振电路（101A）和包括线路（Lt1）的串联电路（101B）构成。并联谐振电路（101A）的谐振频率是高频发送/接收信号的陷波频率。低通滤波器（101）的所有元件的谐振频率是在高频下发生的不期望的谐振的陷波频率。

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