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91. 发明授权

EP1630872B1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 有权转让
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1630872B1
公开(公告)日：2016-12-28
申请号：EP03736055.9
申请日：2003-06-05
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Tokuda, Norifumi, , Kusunoki, Shigeru,
IPC分类号： H01L29/739 , H01L29/08 , H01L29/06 , H01L21/331
CPC分类号： H01L29/0696 , H01L29/0649 , H01L29/0834 , H01L29/7397 , H01L2924/0002 , H01L2924/00

92. 发明公开

EP3107117A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 有权转让
标题翻译： HERBLEITERBAUEMENT UND HERSTELLUNGSVERFAHRENFÜRHALBLEITERBAUELEMENT
公开(公告)号：EP3107117A1
公开(公告)日：2016-12-21
申请号：EP14882050.9
申请日：2014-09-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KAMEYAMA Satoru , IWASAKI Shinya , HORIUCHI Yuki , OKI Shuhei
IPC分类号： H01L21/329 , H01L21/265 , H01L21/336 , H01L27/04 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868 , H01L29/36
CPC分类号： H01L27/0664 , H01L21/02675 , H01L21/265 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/425 , H01L21/8222 , H01L27/0629 , H01L29/0684 , H01L29/0821 , H01L29/0839 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/66348 , H01L29/7397 , H01L29/78 , H01L29/8611
摘要： A semiconductor device, in which, in a density distribution of first conductivity type impurities in the first conductivity type region 38 measured along a thickness direction of the semiconductor substrate 12, a local maximum value N1, a local minimum value N2, a local maximum value N3, and a density N4 are formed in this order from front surface side, a relationship of N1>N3>N2>N4 is satisfied, a relationship of N3/10>N2 is satisfied, and a distance "a" from the surface to the depth having the local maximum value N1 is larger than twice a distance "b" from the depth having the local maximum value N1 to the depth having the local minimum N2.
摘要翻译：一种半导体器件，其中沿着半导体衬底12的厚度方向测量的第一导电类型区域38中的第一导电类型杂质的密度分布为局部最大值N1，局部最小值N2，局部最大值 N3，密度N4从前表面依次形成，满足N1> N3> N2> N4的关系，满足N3 / 10> N2的关系，从表面到具有局部最大值N1的深度大于距离具有局部最大值N1的深度与具有局部最小值N2的深度的距离“b”的两倍。

93. 发明公开

EP2966683A4 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2966683A4
公开(公告)日：2016-10-26
申请号：EP14850425
申请日：2014-10-03
申请人： FUJI ELECTRIC CO LTD
发明人： TAMURA MASAKI , YOSHIDA SOUICHI , ADACHI SHINICHIRO
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L27/0664 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/456 , H01L29/66348 , H01L29/7397

94. 发明公开

EP3082167A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HALBLEITERBAUELEMENTHERSTELLUNGSVERFAHREN
公开(公告)号：EP3082167A1
公开(公告)日：2016-10-19
申请号：EP13898991.8
申请日：2013-12-13
申请人： Mitsubishi Electric Corporation
发明人： KAWASE, Yusuke , KANADA, Kazunori , MINATO, Tadaharu
IPC分类号： H01L29/739 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/0415 , H01L21/26513 , H01L21/324 , H01L29/0821 , H01L29/0847 , H01L29/167 , H01L29/66333
摘要： A first step in which, on a first main surface and a second main surface opposite to the first main surface of a semiconductor substrate, a first conductivity-type impurity is implanted in the second main surface by using multiple ion implantations of different acceleration energies so as to form a first impurity region on the semiconductor substrate, a second step in which a second conductivity-type impurity is implanted in the second main surface using the acceleration energy lower than the multiple ion implantations, and a second impurity region is formed so that a non-implantation region in which the impurity is not implanted is left between that and the first impurity region in the semiconductor substrate, a heat treatment step in which heat treatment is applied to the semiconductor substrate so that a buffer layer is formed by the first conductivity-type impurity, a collector layer is formed by the second conductivity-type impurity, and a non-diffusion region in which the first conductivity-type impurity and the second conductivity-type impurity do not diffuse are left between the buffer layer and the collector layer, and a step in which a collector electrode in contact with the collector layer is formed are provided,
摘要翻译：第一步骤是通过使用不同加速能量的多次离子注入，在第一主表面和与半导体衬底的第一主表面相对的第二主表面上将第一导电类型杂质注入第二主表面，因此为了在半导体衬底上形成第一杂质区域，第二步骤是使用低于多个离子注入的加速能量将第二导电类型杂质注入第二主表面，形成第二杂质区，使得在半导体衬底中留下不注入杂质的非注入区域和第一杂质区域之间的热处理步骤，其中对半导体衬底施加热处理使得缓冲层由第一导电型杂质，通过第二导电型杂质形成集电极层，以及非扩散区域，其中第一c 在缓冲层和集电体层之间留有感生性杂质和第二导电型杂质不扩散，并且设置形成与集电体层接触的集电极的工序，

95. 发明授权

EP1901354B1 A tunnel field-effect transistor with gated tunnel barrier 有权
标题翻译：具有栅极控制隧道势垒的隧道场效应晶体管。
公开(公告)号：EP1901354B1
公开(公告)日：2016-08-24
申请号：EP07010947.5
申请日：2007-06-04
申请人： IMEC , Katholieke Universiteit Leuven (KUL)
发明人： Vandenberghe, William G. , Verhulst, Anne S.
IPC分类号： H01L29/423 , H01L29/739 , H01L29/06 , H01L29/775
CPC分类号： H01L29/4232 , B82Y10/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/66977 , H01L29/7391 , H01L29/775 , H01L29/7831 , H01L29/785

96. 发明公开

EP3046140A3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3046140A3
公开(公告)日：2016-08-10
申请号：EP16150741.3
申请日：2016-01-11
申请人： Renesas Electronics Corporation
发明人： KAWAI, Tohru , NAKASHIBA, Yasutaka , AKIYAMA, Yutaka
IPC分类号： H01L21/336 , H01L29/78 , H01L29/739 , H01L27/07
CPC分类号： H01L29/7813 , H01L23/4952 , H01L23/49562 , H01L23/5223 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L27/0733 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.
摘要翻译：在不增加半导体芯片面积的情况下提高了半导体器件的性能。例如，功率晶体管的源电极和电容器元件的上电极具有重叠部分。换句话说，电容器元件的上电极通过电容器绝缘膜形成在功率晶体管的源电极上。即，功率晶体管和电容器元件在半导体芯片的厚度方向上层叠配置。其结果是，能够抑制半导体芯片的平面尺寸的增加，并且追加与功率晶体管电连接的电容元件。

97. 发明公开

EP3046140A2 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： HERBLEITERBAUEMENT UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3046140A2
公开(公告)日：2016-07-20
申请号：EP16150741.3
申请日：2016-01-11
申请人： Renesas Electronics Corporation
发明人： KAWAI, Tohru , NAKASHIBA, Yasutaka , AKIYAMA, Yutaka
IPC分类号： H01L21/336 , H01L29/78 , H01L29/739
CPC分类号： H01L29/7813 , H01L23/4952 , H01L23/49562 , H01L23/5223 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L27/0629 , H01L27/0733 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L2224/05624 , H01L2224/0603 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.
摘要翻译：在不增加半导体芯片的面积尺寸的情况下，半导体器件的性能得到改善。例如，功率晶体管的源电极和电容器元件的上电极具有重叠部分。换句话说，电容器元件的上电极通过电容器绝缘膜形成在功率晶体管的源极上。也就是说，功率晶体管和电容器元件在半导体芯片的厚度方向上层叠。结果，可以在抑制半导体芯片的平面尺寸的增加的同时添加电耦合到功率晶体管的电容器元件。

98. 发明授权

EP2477226B1 SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE HAVING DIODE REGION AND IGBT REGION 有权转让
标题翻译：与二极管地区和IGBT区的半导体衬底半导体部件
公开(公告)号：EP2477226B1
公开(公告)日：2016-06-22
申请号：EP09849004.8
申请日：2009-09-07
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： NAGAOKA Tatsuji , SOENO Akitaka
IPC分类号： H01L27/04 , H01L21/322 , H01L21/336 , H01L21/76 , H01L21/761 , H01L21/8234 , H01L27/06 , H01L27/08 , H01L29/739 , H01L29/78 , H01L29/32 , H01L27/07 , H01L29/861
CPC分类号： H01L21/761 , H01L27/0727 , H01L29/32 , H01L29/7397 , H01L29/861

99. 发明公开

EP2626906A3 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：EP2626906A3
公开(公告)日：2016-06-15
申请号：EP13153523.9
申请日：2013-01-31
申请人： Renesas Electronics Corporation
发明人： Arai, Daisuke , Kubo, Sakae , Ikegami, Yuta
IPC分类号： H01L29/739 , H01L21/331 , H01L29/06 , H01L21/20 , H01L29/66 , H01L29/04 , H01L29/08
CPC分类号： H01L29/7393 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/0847 , H01L29/66333 , H01L29/7395
摘要： To improve a manufacture yield of semiconductor devices each including an 1GBT, an active region is defined by an insulating film and where an element of an 1GBT is formed has a first long side and a second long side spaced at a predetermined distance apart from each other and extended in a first direction in a planar view. One end of the first long side has a first short side forming a first angle with the first long side, and one end of the second long side has a second short side forming a second angle with the second long side. The other end of the first long side has a third short side forming a third angle with the first long side, and the other end of the second long side has a fourth short side forming a fourth angle with the second long side. The first angle, the second angle, the third angle, and the fourth angle are in a range larger than 90 degrees and smaller than 180 degrees.
摘要翻译：为了提高各自包括1GBT的半导体器件的制造成品率，有源区域由绝缘膜限定，并且其中形成1GBT的元件具有彼此隔开预定距离隔开的第一长边和第二长边并且在平面图中沿第一方向延伸。第一长边的一端具有与第一长边形成第一角度的第一短边，第二长边的一端具有与第二长边形成第二角度的第二短边。第一长边的另一端具有与第一长边形成第三角度的第三短边，第二长边的另一端具有与第二长边形成第四角度的第四短边。第一角度，第二角度，第三角度和第四角度在大于90度且小于180度的范围内。

100. 发明公开

EP2482319A3 Semiconductor devices and power conversion systems 有权转让
标题翻译：半导体器件和电源转换系统
公开(公告)号：EP2482319A3
公开(公告)日：2016-04-13
申请号：EP12150926.9
申请日：2012-01-12
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Shiraishi, Masaki , Mori, Mutsuhiro , Suzuki, Hiroshi , Watanabe, So
IPC分类号： H01L29/739 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/66 , H01L29/06
摘要： A semiconductor device which includes: a first semiconductor layer (4) of a first conductivity type; a second semiconductor layer (2) of a second conductivity type that is formed near a surface of the first semiconductor layer (4); a first main electrode (11) that is electrically connected to the second semiconductor layer (2); a third semiconductor layer (6) of the second conductivity type that neighbors the first semiconductor layer (4) and is formed near a surface of the first semiconductor layer (4) opposite to the second semiconductor layer (2); a fourth semiconductor layer (7) of the first conductivity type that is selectively disposed in an upper portion of the third semiconductor layer (6); a second main electrode (14) that is electrically connected to the third semiconductor layer (6) and the fourth semiconductor layer (7); a trench (17) whose side face is in contact with the third semiconductor layer (6) and the fourth semiconductor layer (7), while reaching the first semiconductor layer (4); a gate electrode (9) that is formed along the side face of the trench (17) by a sidewall of polysilicon; and a polysilicon electrode (18) that is disposed away from the gate electrode (9) within the trench (17) and electrically connected to the second main electrode (14).

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