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1. 发明公开

EP2966671A1 LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译： LASERGLÜHVORRICHTUNGUND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUEMENTS
公开(公告)号：EP2966671A1
公开(公告)日：2016-01-13
申请号：EP13876834.6
申请日：2013-03-07
申请人： Mitsubishi Electric Corporation
发明人： KANADA, Kazunori , MINATO, Tadaharu , KAWASE, Yusuke
IPC分类号： H01L21/268 , H01L21/20
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0622 , B23K26/0732 , B23K26/082 , B23K26/0853 , H01L21/324 , H01L29/66333
摘要： A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region.
摘要翻译：本发明的激光退火装置包括放置加热物体的台，发射第一连续激光的第一激光元件，将第一连续激光引导到加热对象以形成第一应用的第一光学系统区域，第二激光元件，其发射波长短于第一连续激光的波长的第二连续激光;第二光学系统，其将第二连续激光引导到加热对象以形成第二施加区域以及系统控制器，其利用第一施加区域和第二施加区域执行扫描，使得在用第二施加区域扫描之前，用至少部分第一施加区域扫描加热物体的每个部分。

2. 发明公开

EP3082167A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HALBLEITERBAUELEMENTHERSTELLUNGSVERFAHREN
公开(公告)号：EP3082167A1
公开(公告)日：2016-10-19
申请号：EP13898991.8
申请日：2013-12-13
申请人： Mitsubishi Electric Corporation
发明人： KAWASE, Yusuke , KANADA, Kazunori , MINATO, Tadaharu
IPC分类号： H01L29/739 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/0415 , H01L21/26513 , H01L21/324 , H01L29/0821 , H01L29/0847 , H01L29/167 , H01L29/66333
摘要： A first step in which, on a first main surface and a second main surface opposite to the first main surface of a semiconductor substrate, a first conductivity-type impurity is implanted in the second main surface by using multiple ion implantations of different acceleration energies so as to form a first impurity region on the semiconductor substrate, a second step in which a second conductivity-type impurity is implanted in the second main surface using the acceleration energy lower than the multiple ion implantations, and a second impurity region is formed so that a non-implantation region in which the impurity is not implanted is left between that and the first impurity region in the semiconductor substrate, a heat treatment step in which heat treatment is applied to the semiconductor substrate so that a buffer layer is formed by the first conductivity-type impurity, a collector layer is formed by the second conductivity-type impurity, and a non-diffusion region in which the first conductivity-type impurity and the second conductivity-type impurity do not diffuse are left between the buffer layer and the collector layer, and a step in which a collector electrode in contact with the collector layer is formed are provided,
摘要翻译：第一步骤是通过使用不同加速能量的多次离子注入，在第一主表面和与半导体衬底的第一主表面相对的第二主表面上将第一导电类型杂质注入第二主表面，因此为了在半导体衬底上形成第一杂质区域，第二步骤是使用低于多个离子注入的加速能量将第二导电类型杂质注入第二主表面，形成第二杂质区，使得在半导体衬底中留下不注入杂质的非注入区域和第一杂质区域之间的热处理步骤，其中对半导体衬底施加热处理使得缓冲层由第一导电型杂质，通过第二导电型杂质形成集电极层，以及非扩散区域，其中第一c 在缓冲层和集电体层之间留有感生性杂质和第二导电型杂质不扩散，并且设置形成与集电体层接触的集电极的工序，

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