专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

EP0735586B1 Semi-conductor structures 失效
标题翻译：半导体结构
公开(公告)号：EP0735586B1
公开(公告)日：2002-12-11
申请号：EP96104793.3
申请日：1996-03-26
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Hong, Qi-Zhong , Jeng, Shin-Puu , Havemann, Robert H.
IPC分类号： H01L23/532
CPC分类号： H01L21/76876 , H01L21/76841 , H01L23/5226 , H01L23/53223 , H01L2221/1078 , H01L2924/0002 , Y10S257/915 , H01L2924/00

92. 发明公开

EP1182698A2 Barriereschicht für einen Speicherkondensator 审中-公开
标题翻译： Barriereschichtfüreinen Speicherkondensator
公开(公告)号：EP1182698A2
公开(公告)日：2002-02-27
申请号：EP01118994.1
申请日：2001-08-06
申请人： Infineon Technologies AG
发明人： Gabric, Zvonimir , Hartner, Walter , Schindler, Günther
IPC分类号： H01L21/285 , H01L21/02
CPC分类号： H01L28/55 , H01L21/76828 , H01L21/76832 , H01L21/76834 , H01L21/76841
摘要： Die Erfindung betrifft ein Verfahren zur Herstellung eines mikroelektronischen Bauelements und ein derartiges Bauelement, bei welchen auf einen Speicherkondensator, der ein ferroelektrisches oder paraelektrisches Dielektrikum hat, eine Barriere gegen ein Hindurchtreten von Wasserstoff aufgebracht wird bzw. ist. Bei der Bildung der Barriere wird zunächst eine Siliziumoxid-Schicht (41) erzeugt, diese dann getempert und danach eine Barriereschicht (42) aufgebracht.
摘要翻译：微电子部件的制造包括：（i）在衬底上形成包含第一电极，第二电极和铁电体或对等电介质的存储电容器; 和（ii）在电容器上形成阻挡层以防止氢气通过。通过形成氧化硅层（41），回火电容器和氧化硅层的至少一部分以及将阻挡层（42）施加到回火的氧化硅层来产生氢气阻挡层。优选特征：在无氢沉积工艺中施加至少一部分阻挡层。首先施加阻挡层的第一部分层，随后是第二部分氮化硅层。使用低压微波工艺沉积氮化硅层。氧化硅层具有部分层（411,412）。

93. 发明公开

EP1152463A1 SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD 审中-公开
标题翻译：哈萨克斯坦的HALBLEITERBAUELEMENT DESSEN HERSTELLUNGSVERFAHREN
公开(公告)号：EP1152463A1
公开(公告)日：2001-11-07
申请号：EP00900172.8
申请日：2000-01-11
申请人： TOKYO ELECTRON LIMITED
发明人： ISHIZUKA, Shuichi
IPC分类号： H01L21/768 , H01L21/314
CPC分类号： H01L21/0212 , C23C16/26 , H01L21/02274 , H01L21/3127 , H01L21/7682 , H01L21/76834 , H01L21/76835 , H01L21/76841 , H01L21/7685 , H01L21/76858
摘要： On a first interlayer insulating film 41, a second wiring layer 34 comprising a plurality of wirings 35 with concave portions between adjacent ones of the wirings 35, is superposed. A second interlayer is insulting film 43 is superposed on the second wiring layer 34. The second interlayer insulating film 43 layer 34 is made of film producing material, such as CF film, that is unlikely to serve as filling due to its intrinsic property. Gasses that are used to produce the film producing material unlikely to be filling include C 6 F 6 gas, for example, and ionizing the gas into plasma allows the CF film to be formed on the wiring layer 34 while inhibiting the CF film from filling the concave portions 30. In this way, air gaps 36 are defined in shapes similar to those of the concave portions 30 between the wirings 35. The semiconductor device manufactured in such a manner can avoid reducing its mechanical strength while capacities between the wirings are decreased.
摘要翻译：在第一层间绝缘膜41上，包括在相邻的布线35之间具有多个布线35的第二布线层34，该导线35具有凹入部分。第二层间绝缘膜43重叠在第二布线层34上。第二层间绝缘膜43层34由诸如CF膜的薄膜生产材料制成，由于其固有特性而不太可能用作填充物。用于生产不太可能填充的薄膜生产材料的气体例如包括C6F6气体，并将气体电离成等离子体，可以在布线层34上形成CF膜，同时抑制CF膜填充凹部30 以这种方式，气隙36被限定为与布线35之间的凹部30的形状相似的形状。以这种方式制造的半导体器件可以避免在布线之间的容量降低的同时降低其机械强度。

94. 发明公开

EP1063687A2 Titanium-tantalum barrier layer film and method for forming the same 审中-公开
标题翻译： Titan-Tantal-Barriereschicht und Verfahren zu deren Herstellung
公开(公告)号：EP1063687A2
公开(公告)日：2000-12-27
申请号：EP00304061.5
申请日：2000-05-15
申请人： LUCENT TECHNOLOGIES INC.
发明人： Bhowmik, Siddhartha , Merchant, Sailesh Mansinh , Oh, Minseok , Roy, Pradip Kumar , Sen, Sidhartha
IPC分类号： H01L21/285 , H01L21/768 , H01L21/3205 , H01L23/532
CPC分类号： H01L21/76864 , H01L21/76807 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L23/53238 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A titanium-tantalum barrier layer film for use in conjunction with an interconnect film such as copper and a method for forming the same provides a relatively titanium rich/tantalum deficient portion adjacent the interface it forms with a dielectric film and a relatively tantalum rich/titanium deficient portion adjacent the interface it forms with a conductive interconnect film formed over the barrier layer film. The titanium rich/tantalum deficient portion provides good adhesion to the dielectric film and the tantalum rich/titanium deficient portion forms a hetero-epitaxial interface with the interconnect film and suppresses the formation of inter-metallic compounds. A single titanium-tantalum film having a composition gradient from top-to-bottom may be formed using various techniques including PVD, CVD, sputter deposition using a sputtering target of homogeneous composition, and sputter deposition using multiple sputtering targets. A composite titanium-tantalum film consists of two separately formed films.
摘要翻译：用于与诸如铜的互连膜一起使用的钛 - 钽阻挡层膜及其形成方法提供了与其形成的界面相邻的富钛/钽缺陷部分，其与介电膜和相对富钽/钛与界面相邻的缺陷部分与形成在阻挡层膜上的导电互连膜形成。富钛/钽缺陷部分对电介质膜提供良好的粘附性，并且富钽/钛缺陷部分与互连膜形成异质外延界面并抑制金属间化合物的形成。可以使用包括PVD，CVD，使用均匀组合物的溅射靶的溅射沉积以及使用多个溅射靶的溅射沉积的各种技术来形成具有从顶部到底部的组成梯度的单个钛 - 钽膜。复合钛 - 钽膜由两个单独形成的膜组成。

95. 发明公开

EP1022352A2 Method for forming metal interconnects with increased electromigration lifetime 审中-公开
标题翻译： Verfahren zur Herstellung von Metallverbindungen miterhöhterElektromigrationslebensdauer
公开(公告)号：EP1022352A2
公开(公告)日：2000-07-26
申请号：EP99125723.9
申请日：1999-12-23
申请人： Infineon Technologies North America Corp. , International Business Machines Corporation
发明人： Schnabel, Rainer Florian , Hoinkis, Mark , Iggulden, Roy , Clevenger, Lawrence , Filippi, Ronald , Weber, Stefan , Weigand, Peter
IPC分类号： C23C14/32 , H01L21/3205 , H01L21/768 , H01L21/285
CPC分类号： H01L21/76864 , H01L21/2855 , H01L21/76841
摘要： A reliable interconnect for semiconductor integrated circuits is provided. The interconnect comprises a conductor and a liner formed thereunder by an ionized metal plasma physical vapor deposition process. The liner reduces the angular distribution as well as reducing the size of the grains in the conductor, which results in an increase in electromigration lifetime.
摘要翻译：提供了半导体集成电路的可靠互连。互连包括通过电离金属等离子体物理气相沉积工艺在其下形成的导体和衬垫。衬垫减小角分布以及减小导体中晶粒的尺寸，这导致电迁移寿命的增加。

96. 发明公开

EP1008172A4 IMPROVED INTERFACE BETWEEN TITANIUM AND ALUMINUM-ALLOY IN METAL STACK FOR INTEGRATED CIRCUIT 失效
标题翻译： BETWEEN钛和铝合金改进了界面METALLSTAPELFÜR集成电路
公开(公告)号：EP1008172A4
公开(公告)日：2000-06-14
申请号：EP96933218
申请日：1996-09-30
申请人： INTEL CORP
发明人： RASTOGI RAJIV , UNDERWOOD SANDRA J , FUJIMOTO HARRY H
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L21/283
CPC分类号： H01L21/2855 , H01L21/76838 , H01L21/76841 , H01L21/7685 , H01L23/53223 , H01L2221/1078 , H01L2924/0002 , Y10S257/915 , H01L2924/00
摘要： An improvement in a metal stack used for interconnecting structures in an integrated circuit. The improvement comprises the entrapping in a titanium layer of nitrogen at the interface where the titanium layer contacts a bulk conductor layer such as an aluminum-copper alloy layer. The entrapped nitrogen prevents the formation of any substantial amount of titanium aluminide thereby reducing current densities and also improving the electromigration properties of the stack. As currently preferred, the nitrogen is entrapped in approximately the first 30 Å of the titanium layer.

97. 发明公开

EP0799903A3 Methods of sputtering a metal onto a substrate and semiconductor processing apparatus 失效
标题翻译：一种用于溅射金属到衬底上和装置用于治疗半导体的方法
公开(公告)号：EP0799903A3
公开(公告)日：1999-11-17
申请号：EP96305733.6
申请日：1996-08-02
申请人： APPLIED MATERIALS, INC.
发明人： Xu, Zheng , Forster, John , Yao, Tse-Yong , Nulman, Jaim , Chen, Fusen
IPC分类号： C23C14/14 , C23C14/34 , H01L21/283 , H01L21/768 , H01J37/34 , H01L23/532 , C23C14/35
CPC分类号： C23C14/345 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also useful for forming interconnects that are highly resistant to electromigration. A liner or barrier layer (150) is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact (140) is connected at its bottom to a silicon element (144), the first sublayer (160) of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer (162) comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer (164) comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer (156) is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500°C, preferably between 350 and 420°C, while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.

98. 发明公开

EP0875923A3 Multilayer metallization structure comprising a group IVA metal 失效
标题翻译：多层金属化结构与IVA金属
公开(公告)号：EP0875923A3
公开(公告)日：1999-11-03
申请号：EP98303124.6
申请日：1998-04-23
申请人： International Business Machines Corporation , KABUSHIKI KAISHA TOSHIBA
发明人： Usui, Takamasa , Dehaven, Patrick W. , Rodbell, Kenneth P. , Filippi, Ronald G. , Yang, Chi-Hua , Kataka, Tomio , Aochi, Hideaki
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/76858 , H01L21/2855 , H01L21/76841 , H01L21/7685 , H01L21/76885 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： An electronic device comprises a metallization structure comprising a deposited underlayer of a group IVA metal having a thickness of about 90 to about 110 angstroms; and a deposited layer of aluminum and/or an aluminum alloy is provided. The metallization structure exhibits enhanced electromigration and is highly textured and is especially suitable for forming electrical connections or wiring.

99. 发明公开

EP0799903A2 Methods of sputtering a metal onto a substrate and semiconductor processing apparatus 失效
标题翻译：一种用于溅射金属到衬底上和装置用于治疗半导体的方法
公开(公告)号：EP0799903A2
公开(公告)日：1997-10-08
申请号：EP96305733.6
申请日：1996-08-02
申请人： APPLIED MATERIALS, INC.
发明人： Xu, Zheng , Forster, John , Yao, Tse-Yong , Nulman, Jaim , Chen, Fusen
IPC分类号： C23C14/14 , C23C14/34 , H01L21/283 , H01L21/768 , H01J37/34 , H01L23/532 , C23C14/35
CPC分类号： C23C14/345 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also useful for forming interconnects that are highly resistant to electromigration. A liner or barrier layer (150) is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact (140) is connected at its bottom to a silicon element (144), the first sublayer (160) of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer (162) comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer (164) comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer (156) is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500°C, preferably between 350 and 420°C, while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.
摘要翻译：铝溅射工艺，用于填充通孔，并且通过电介质层而形成高纵横比的接触件，因此用于形成互连做有用特别有用的是高度抗电迁移。衬里层或阻挡层（150）首先通过高密度等离子体沉积（HDP）物理气相沉积（PVD，所谓的溅射）过程中，如与寻求电感耦合等离子体来完成。如果一个触点（140）在其底部的硅元件（144）连接，所述衬垫层的第一子层（160）是被硅化物化，硅基底Ti层，全部。第二子层（162）包含锡，这不仅作为防止不期望的组分的迁移的阻挡进入下方硅但具有当一个HDP工艺和偏压晶片形成致密，光滑的晶体结构，从而沉积。第三子层（164）包括Ti，优选分级由TiN与Ti。在铝层（156）上的衬垫层中的标准的，非HDP工艺被沉积。衬垫层允许该铝沉积的最热部分以℃，320和500之间的相对低的温度下进行，优选350和420℃之间，而静静地填充窄插头孔，和TiN并不需要进行退火处理以形成有效的屏障防止扩散到硅中。通过本发明方法形成的水平互连是电迁移抵抗性。

100. 发明公开

EP0793271A2 Semiconductor device having a metal silicide film and method of fabricating the same 失效
标题翻译： Verfahren zur Herstellung einer Halbleiteranordnung mit einem Metallsilizidfilm
公开(公告)号：EP0793271A2
公开(公告)日：1997-09-03
申请号：EP97102797.4
申请日：1997-02-20
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Sekiguchi, Mitsuru , Yamanaka, Michinari
IPC分类号： H01L23/482 , H01L21/60
CPC分类号： H01L21/76876 , H01L21/28052 , H01L21/28518 , H01L21/76841 , H01L21/76843 , H01L21/76856 , H01L21/76858 , H01L23/485 , H01L29/41783 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66575 , H01L2924/0002 , Y10S438/918 , H01L2924/00
摘要： After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-containing gas at 550 degrees centigrade or less. As a result of such processing, a barrier compound layer, composed of a compound of nitrogen, oxygen, metal and silicon, is formed at a near-surface region of the metal silicide film of the titanium silicide film. Thereafter, while forming a buried layer from material superior in step coverage such as an Al-Ti compound and an aluminum alloy, reaction between the metal silicide film and the buried layer in a later annealing treatment can be avoided without depositing a barrier metal such as a titanium nitride/nitride film in the connection hole. Accordingly, contact resistance, sheet resistance and junction leakage can be reduced and reliability can be improved.
摘要翻译：在形成连接孔之后或在沉积绝缘膜之前，将半导体器件放置在等离子体发生器的阴极上。诸如钛的硅化物的金属硅化物膜的表面在550摄氏度或更低的温度下暴露于含氮气体的等离子体。作为这种处理的结果，在硅化钛膜的金属硅化物膜的近表面区域处形成由氮，氧，金属和硅的化合物构成的阻挡化合物层。此后，在由Al-Ti化合物和铝合金等阶梯覆盖材料形成掩埋层的同时，可以避免金属硅化物膜与埋层之间的后续退火处理中的反应，而不会形成诸如连接孔中的氮化钛/氮化物膜。因此，可以降低接触电阻，薄层电阻和结漏电，提高可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式