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2. 发明公开

EP3236487A2 METHOD OF MAKING SEMICONDUCTOR FERROELECTRIC MEMORY ELEMENT AND SEMICONDUCTOR FERROELECTRIC MEMORY TRANSISTOR 有权转让
公开(公告)号：EP3236487A2
公开(公告)日：2017-10-25
申请号：EP17167457.5
申请日：2017-04-21
申请人： National Institute of Advanced Industrial Science and Technology , Wacom, R&D Corporation
发明人： Sakai, Shigeki , Takahashi, Mitsue , Kusuhara, Masaki , Toda, Masayuki , Umeda, Masaru , Sasaki, Yoshikazu
IPC分类号： H01L21/28 , G11C11/22 , H01L29/51 , H01L29/66 , H01L29/78
CPC分类号： H01L21/28291 , G11C11/223 , H01L21/02181 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L27/1159 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/518 , H01L29/6684 , H01L29/78391
摘要： Described is a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is in the range: 59 nm 5 seconds and the data rewrite withstand property of not less than 10 8 times, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. The method comprises sequentially forming in the indicated order on a semiconductor substrate an insulator, a bismuth layered perovskite crystalline ferroelectric film and a metal. The stack is annealed for ferroelectric crystallization. Preferably, the film is composed of Ca. Sr, Bi, Ta and oxygen atoms, the metal is Ir or Pt or an alloy of Ir and Pt, or Ru, and the annealing is performed in a mixed gas having oxygen added to nitrogen or a mixed gas having oxygen added to argon.

3. 发明公开

EP2840619A4 METHOD FOR FABRICATING NANOPATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE 审中-公开
标题翻译：生产用于高效氮化物基LED的纳米结构衬底的方法
公开(公告)号：EP2840619A4
公开(公告)日：2015-05-06
申请号：EP13778786
申请日：2013-04-17
申请人： HUNETPLUS CO LTD
发明人： CHA HYUK-JIN , LEE HEON , CHOI EUNSEO
IPC分类号： H01L33/20 , H01L21/02 , H01L21/3105 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02356 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/3105 , H01L21/311 , H01L33/12 , H01L33/20 , H01L33/22 , H01L2933/0033

4. 发明授权

EP2705551B1 PROCÉDÉ DE CRISTALLISATION ORIENTÉE DE MATÉRIAUX 有权
标题翻译：方法材料的取向结晶
公开(公告)号：EP2705551B1
公开(公告)日：2015-01-14
申请号：EP12720647.2
申请日：2012-04-23
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENWADIH, Mohammed
IPC分类号： H01L51/00
CPC分类号： H01L51/0012 , H01L21/02356 , H01L51/0003 , H01L51/0558

5. 发明公开

EP2784804A1 PZT-based ferroelectric thin film and method of forming the same 审中-公开
标题翻译： Dünnschichtauf PZT-Basis und Herstellungsverfahrendafür
公开(公告)号：EP2784804A1
公开(公告)日：2014-10-01
申请号：EP14155492.3
申请日：2014-02-18
申请人： Mitsubishi Materials Corporation
发明人： Doi, Toshihiro , Sakurai, Hideaki , Soyama, Nobuyuki , Noguchi, Takashi
IPC分类号： H01L21/316 , H01L21/02
CPC分类号： H01G4/08 , B05D1/38 , B05D3/0254 , C23C16/409 , H01G4/018 , H01G4/06 , H01G4/30 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L28/55 , H01L41/1876 , H01L41/318
摘要： A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.
摘要翻译：通过将基于PZT的强电介质薄膜形成组合物涂布在基板的下电极上一次或两次或更多次来形成PZT型铁电薄膜，预烘烤该组合物，并焙烧待结晶的组合物，以及该薄膜包括平均粒度在500nm至3000nm范围内的PZT基颗粒，当在薄膜表面上测量时，其平均粒度为20nm以下的非均匀微粒为不同于PZT的颗粒，沉淀在薄膜表面的一部分或全部晶界上。

6. 发明公开

EP1879928A1 A METHOD FOR FORMING FERROELECTRIC THIN FILMS, THE USE OF THE METHOD AND A MEMORY WITH A FERROELECTRIC OLIGOMER MEMORY MATERIAL 审中-公开
标题翻译：方法教育FERRO电薄膜，使用具有FERRO电动低聚存储材料的程序记忆
公开(公告)号：EP1879928A1
公开(公告)日：2008-01-23
申请号：EP06747629.1
申请日：2006-05-02
申请人： Thin Film Electronics ASA
发明人： JOHANSSON, Nicklas , XU, Haisheng , LEISTAD, Geirr I.
IPC分类号： C08F14/22 , C23C14/12 , H01L21/312
CPC分类号： C23C14/12 , B05D1/60 , B05D2506/10 , C08F214/22 , H01L21/0212 , H01L21/02269 , H01L21/02356 , H01L21/28291 , H01L21/3127 , H01L27/285
摘要： In a method for forming ferroelectric thin films of vinylidene fluoride oligomer or vinylidene fluoride co-oligomer, oligomer material is evaporated in vacuum chamber and deposited as a thin film on a substrate which is cooled to a temperature in a range determined by process parameters and physical properties of the deposited VDF oligomer or co-oligomer thin film. In an application of the method of the invention for fabricating ferroelectric memory cells or ferroelectric memory devices, a ferroelectric memory material is provided in the form of a thin film of VDF oligomer or VDF co-oligomer located between electrode structures. A ferroelectric memory cell or ferroelectric memory device fabricated in this manner has the memory material in the form of a thin film of VDF oligomer or VDF co-oligomer provided on at least one of first and second electrode structures, such that the thin film is provided on at least one of the electrode structures or between first and second electrode structures.

7. 发明公开

EP1770725A2 Dielectric film production process and capacitor 有权
标题翻译： Herstellungsverfahrenfüreinen dielektrischen Film und Kondensator
公开(公告)号：EP1770725A2
公开(公告)日：2007-04-04
申请号：EP06015838.3
申请日：2006-07-28
申请人： TDK Corporation
发明人： Uchida, Kiyoshi , Horino, Kenji , Saita, Hitoshi
IPC分类号： H01G4/12 , H05K1/16
CPC分类号： H01L21/02197 , H01G4/1227 , H01L21/02356 , H01L21/31691 , H01L27/016 , H05K1/162 , H05K2201/0175 , H05K2201/0355
摘要： A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.
摘要翻译：设置有电介质膜的电容器和夹在其中且彼此面对的形成的第一电极和第二电极，其中所述电介质膜的密度超过基于晶格常数计算的理论密度的72％，并且所述第一电极和第二电极含有选自Cu，Ni，Al，不锈钢和铬镍铁合金中的至少一种金属。

8. 发明公开

EP1452619A4 THIN METAL OXIDE FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： FOR生产薄金属氧化物AND PROCESS
公开(公告)号：EP1452619A4
公开(公告)日：2007-04-04
申请号：EP02768137
申请日：2002-09-30
申请人： TOTO LTD , TOUDAI TLO LTD
发明人： FUKUHISA KOJI , NAKAJIMA AKIRA , SHINOHARA KENJI , WATANABE TOSHIYA , OHSAKI HISASHI , SERIKAWA TADASHI
IPC分类号： C01B13/14 , C23C8/02 , C23C8/36 , C23C14/08 , C23C14/58 , C23C18/14 , C23C26/00 , H01L21/314 , H01L21/316 , H01L31/0224 , H01L31/18 , C01B13/28 , H01L21/52
CPC分类号： C01B13/145 , C01P2002/01 , C01P2004/03 , C23C8/02 , C23C8/36 , C23C14/08 , C23C14/083 , C23C14/086 , C23C14/5826 , C23C18/14 , C23C26/00 , H01L21/02175 , H01L21/02186 , H01L21/02197 , H01L21/02266 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02356 , H01L21/31604 , H01L21/31616 , H01L21/31691 , H01L31/022466 , H01L31/1884
摘要： A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post-treatment in which the film is exposed to a low-temperature plasma in a high-frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.

9. 发明公开

EP1142008A1 REDUCED DEGRADATION OF METAL OXIDE CERAMIC DUE TO DIFFUSION OF A MOBILE SPECIE THEREFROM 审中-公开
标题翻译：还原通过扩散移动设备导致VERSCHLECHETERUNG一个METALLOXIDKERAMIKPHASE的特点
公开(公告)号：EP1142008A1
公开(公告)日：2001-10-10
申请号：EP99965149.0
申请日：1999-12-08
申请人： Infineon Technologies AG , ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： HINTERMAIER, Frank, S. , ROEDER, Jeffrey, F. , HENDRIX, Bryan, C. , DESROCHERS, Debra, A. , BAUM, Thomas, H.
IPC分类号： H01L21/316
CPC分类号： C04B35/495 , C04B35/497 , C04B35/62222 , C04B2235/3251 , C04B2235/3296 , C04B2235/76 , C23C16/40 , C23C16/408 , C23C16/56 , H01L21/02197 , H01L21/02271 , H01L21/02356 , H01L21/31691
摘要： Reduced diffusion of excess mobile specie from a metal oxide ceramic is achieved by tailoring the composition and/or deposition parameters. A barrier layer which reacts with the excess mobile specie is provided below the metal oxide ceramic to prevent or reduce the diffusion of the excess mobile specie through the bottom electrode and into the substrate.

10. 发明公开

EP1096555A2 Semiconductor device and production thereof 审中-公开
标题翻译： Halbleiteranordnung和Herstellungsmethode
公开(公告)号：EP1096555A2
公开(公告)日：2001-05-02
申请号：EP00123066.3
申请日：2000-10-24
申请人： NEC CORPORATION
发明人： Tatsumi, Toru
IPC分类号： H01L21/316
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02304 , H01L21/02356 , H01L21/31691 , H01L28/56
摘要： In forming a metal oxide dielectric film of perovskite type for capacitor, an array of lower electrodes and a crystallization-assisting conductive film are simultaneously formed. The crystallization-assisting conductive film is formed outside the lower electrode array, at a distance of about 10 µm or less from the outermost lower electrodes, in a width of 20 µm or more. Then, a metal oxide dielectric film is formed thereon. Since the crystallization-assisting conductive film assists the crystallization of metal oxide dielectric film, capacitor elements which are superior in properties and reliability even when the capacitor elements are produced in a fine structure is obtained.
摘要翻译：在形成用于电容器的钙钛矿型金属氧化物电介质膜时，同时形成下电极阵列和结晶化辅助导电膜。结晶化导电膜形成在下部电极阵列的外侧，距离最外侧的下部电极约10μm以下的距离，宽度为20μm以上。然后，在其上形成金属氧化物电介质膜。由于结晶化导电膜有助于金属氧化物电介质膜的结晶化，所以即使电容器元件以精细的结构制造也能获得性能和可靠性优异的电容器元件。

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