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1. 发明公开

EP3297030A1 SELECTIVE FIN CUT 有权
标题翻译：选择性的FIN CUT
公开(公告)号：EP3297030A1
公开(公告)日：2018-03-21
申请号：EP16189054.6
申请日：2016-09-15
申请人： IMEC VZW
发明人： GRONHEID, Roel , MACHKAOUTSAN, Vladimir
IPC分类号： H01L29/66 , G03F7/00
CPC分类号： H01L21/823431 , G03F7/0002 , H01L21/02118 , H01L21/02356 , H01L21/30604 , H01L21/3081 , H01L21/3086 , H01L21/76224 , H01L21/823481 , H01L29/66795
摘要： The present invention relates to the use of directed self-assembly for selectively removing at least one fin (440) or fin (440) section from a pattern (420) of parallel fins (440, 450) in a semiconductor structure.
摘要翻译：本发明涉及使用定向自组装来选择性地从半导体结构中的平行鳍状物（440,450）的图案（420）去除至少一个鳍状物（440）或鳍状物（440）部分。

2. 发明公开

EP3175476A1 METHOD AND APPARATUS FOR HOT JET TREATMENT 审中-公开
标题翻译：用于热喷射处理的方法和设备
公开(公告)号：EP3175476A1
公开(公告)日：2017-06-07
申请号：EP15745481.0
申请日：2015-07-31
申请人： Katholieke Universiteit Leuven
发明人： LOCQUET, Jean-Pierre , SU, Chen-Yi
IPC分类号： H01L21/67 , F27D1/00 , C23C14/22
CPC分类号： H01L21/67109 , C23C14/228 , C23C14/5806 , C23C16/56 , H01L21/02175 , H01L21/02178 , H01L21/02266 , H01L21/02337 , H01L21/02356 , H01L21/02527 , H01L21/02529 , H01L21/02565 , H01L21/02631 , H01L21/02689 , H01L21/68714
摘要： A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.
摘要翻译：一种用于加热基板（140）的表面的加热装置（100）。所述加热装置包括气体源（110），所述气体源（110）包括在所述加热装置的操作条件下呈惰性的惰性材料供应装置，所述气体源适于在所述基底上供应包括所述惰性材料的至少元素的气体的热射流 140）。气体源（110）适于将气体的热射流加热到高于1500℃的温度。

3. 发明公开

EP2434531A2 Metal-insulator-metal capacitor and method for manufacturing thereof 审中-公开
标题翻译： Metall-Isolier-Metall-Kondensator和Herstellungsverfahrendafür
公开(公告)号：EP2434531A2
公开(公告)日：2012-03-28
申请号：EP11182813.3
申请日：2011-09-26
申请人： IMEC
发明人： Popovici, Mihaela Ioana , Swerts, Johan , Pawlak, Malgorzata , Tomida, Kazuyuki , Kim, Min-Soo , Kittl, Jorge , Van Elshocht, Sven
IPC分类号： H01L21/02 , C23C16/455 , H01L49/02
CPC分类号： H01L21/02356 , C23C16/409 , C23C16/45529 , H01L21/02197 , H01L21/0228 , H01L21/02304 , H01L28/56
摘要： The present invention is related to a method for producing a stack of layers on a semiconductor substrate, the method comprising the steps of:
● providing a substrate,
● producing on said substrate a first conductive layer,
● by atomic layer deposition, producing a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO 2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers,

The substrate including said sub-stack of layers is subjected to a heat treatment to thereby obtain a crystallized dielectric layer. A second conductive layer is produced before or after the heat treatment so as to obtain a metal-insulator-metal capacitor with improved characteristics as a consequence of the Ti02 layer being present in the sub-stack. Notably, in a MIM capacitor according to the invention, the k-value of the dielectric layer is between 50 and 100 and the EOT of the MIM capacitor is between 0.35nm and 0.55nm.
摘要翻译：本发明涉及一种用于在半导体衬底上制备层叠层的方法，所述方法包括以下步骤： - 提供衬底， - 在所述衬底上产生第一导电层， - 通过原子层沉积，在所述导电层上产生一层子层，所述子堆叠的至少一层是TiO 2层，所述子堆叠的其它层是具有适于形成在所述子层叠层结晶时立方体的钙钛矿相进行热处理，从而得到包含所述层叠层的基板，从而得到结晶化的介电层。在热处理之前或之后产生第二导电层，从而获得由于TiO 2层存在于子堆中而具有改进特性的金属 - 绝缘体 - 金属电容器。值得注意的是，在根据本发明的MIM电容器中，电介质层的k值在50和100之间，MIM电容器的EOT在0.35nm和0.55nm之间。

4. 发明授权

EP1452619B1 PROCESS FOR PRODUCING A THIN METAL OXIDE FILM 有权
标题翻译： PROCESS FOR金属氧化物薄膜的制备
公开(公告)号：EP1452619B1
公开(公告)日：2011-09-14
申请号：EP02768137.8
申请日：2002-09-30
申请人： National Institute of Advanced Industrial Science and Technology
发明人： FUKUHISA, Koji, c/o Advanced Systems of Technology , NAKAJIMA, Akira, c/o Adv. Systems of Technology , SHINOHARA, Kenji, c/o Adv. Systems of Technology , WATANABE, Toshiya , OHSAKI, Hisashi , SERIKAWA, Tadashi
IPC分类号： C23C8/36 , C23C14/08 , C23C14/58 , C23C18/14 , H01L21/316 , C01B13/28 , H01L21/52
CPC分类号： C01B13/145 , C01P2002/01 , C01P2004/03 , C23C8/02 , C23C8/36 , C23C14/08 , C23C14/083 , C23C14/086 , C23C14/5826 , C23C18/14 , C23C26/00 , H01L21/02175 , H01L21/02186 , H01L21/02197 , H01L21/02266 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02356 , H01L21/31604 , H01L21/31616 , H01L21/31691 , H01L31/022466 , H01L31/1884
摘要： A process for producing a thin film of a crystalline metal oxide, which comprises depositing a film of a metal oxide which is mainly amorphous and then subjecting it to a post-treatment in which the film is exposed to a low-temperature plasma in a high-frequency electric field at a temperature not higher than 180°C; and a thin film of a crystalline metal oxide produced by the process. By the process, a thin crystalline metal oxide film which is dense and homogeneous can be formed on a substrate at a low temperature without the need of a positive heat treatment. A thin metal oxide film having desirable properties can hence be formed even on a substrate having relatively low heat resistance without impairing the material properties of the substrate.

5. 发明公开

EP2180040A1 CHIP FOR CELL ELECTROPHYSIOLOGY SENSOR, CELL ELECTROPHYSIOLOGY SENSOR USING SAME, AND PRODUCTION METHOD OF CHIP FOR CELL ELECTROPHYSIOLOGY SENSOR 有权
标题翻译： CHIPFÜRZELLELEKTROPHYSIOLOGICALOR，ZELLELEKTROPHYSIOLOGIESOR DAMIT UND HERSTELLUNGSVERFAHRENFÜRZELLELEKTROPHYSIOLOGICALOR
公开(公告)号：EP2180040A1
公开(公告)日：2010-04-28
申请号：EP09804680.8
申请日：2009-07-22
申请人： Panasonic Corporation
发明人： NAKATANI, Masaya , USHIO, Hiroshi , YAMAMOTO, Takeki , TAKAHASHI, Makoto
IPC分类号： C12M1/34
CPC分类号： H01L21/02356 , G01N33/48728
摘要： A cellular electrophysiology sensor is adapted to measure an electrical change of a test cell. A chip for the sensor includes a diaphragm, and a thermally-oxidized film mainly containing silicon dioxide on the diaphragm. The diaphragm includes a silicon layer and a silicon dioxide layer on an upper surface of the silicon layer. A through-hole passing through the silicon layer and the silicon dioxide layer is formed. The through-hole has an opening which opens at the silicon dioxide layer and is adapted to capture the test cell. The thermally-oxidized film is provided on an inner wall surface of the through-hole, and unified with the silicon dioxide layer at the opening of the through-hole. This cellular electrophysiology sensor chip can stably capture the test cell and provides a gigaseal stably even if test cells have different properties,
摘要翻译：细胞电生理学传感器适于测量测试电池的电气变化。用于传感器的芯片包括隔膜和在膜片上主要含有二氧化硅的热氧化膜。隔膜在硅层的上表面上包括硅层和二氧化硅层。形成穿过硅层和二氧化硅层的通孔。通孔具有在二氧化硅层开口并且适于捕获测试电池的开口。热氧化膜设置在通孔的内壁表面上，并且在通孔的开口处与二氧化硅层一体化。这种细胞电生理学传感器芯片可以稳定地捕获测试细胞，并且即使测试细胞具有不同的性质也能稳定地提供gigaseal，

6. 发明公开

EP1878043A2 LOW-DIELECTRIC CONSTANT CRYPTOCRYSTAL LAYERS AND NANOSTRUCTURES 有权
标题翻译： CRYPTO晶体低介电常数和性纳米结构BASES
公开(公告)号：EP1878043A2
公开(公告)日：2008-01-16
申请号：EP06710851.4
申请日：2006-02-08
申请人： Tubitak
发明人： KALEM, Seref, Tubitak-uekae Ulusal Elektronik Ve
IPC分类号： H01L21/306
CPC分类号： H01L21/02356 , B82Y30/00 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/28264 , H01L21/30604 , H01L21/312 , H01L29/26 , H01L29/51 , H01L29/513 , H01L33/16 , H01L2924/0002 , H01L2924/00
摘要： This invention provides a method for producing application quality low-dielectric constant (low-k) cryptocrystal layers on state-of-the-art semiconductor wafers and for producing organized Nanostructures from cryptocrystals and relates to optical and electronic devices that can be obtained from these materials. The results disclosed here indicate that modification of structure and chemical composition of single crystal matrix using chemical vapor processing (CVP) results in high quality cryptocrystal layers that are homogeneous and form a smooth interface with semiconductor wafer With this method, growth rates as high as 1 mum/hour can be realized for the dielectric cryptocrystal layer formation. The present invention also provides a method for producing Micro- and Nano-wires by transforming cryptocrystals to organized systems. With this method, Nano wires having dimensions ranging from few nanometers up to 1000 nanometer and lengths up to 50 micrometer can be produced. The cryptocrystals, nanowires and organized structures may be used in future interconnections as interlevel and intermetal di-electrics, in producing ultra high density memory cells, in information security as key generators, in producing photonic componenst, in fabrication of cooling channnels in advanced micro- and nano-electronics packaging and sensors.

7. 发明公开

EP1560265A3 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：EP1560265A3
公开(公告)日：2006-05-24
申请号：EP04012680.7
申请日：2004-05-28
申请人： FUJITSU LIMITED
发明人： Matsuura, Katsuyoshi , Noshiro, Hideyuki , Dote, Aki
IPC分类号： H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L21/02164 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/31612 , H01L21/3162 , H01L21/76801 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A first interlayer insulation film is formed, on which a SiO 2 cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO 2 cap film is preformed by heat treatment. Then, an Al 2 O 3 film is formed on the SiO 2 cap film. Subsequently, heat treatment is performed on the Al 2 O 3 in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al 2 O 3 film, a platinum film, a PLZT film, and an IrO 2 film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.
摘要翻译：形成第一层间绝缘膜，其上形成SiO2盖膜，并通过热处理使第一层间绝缘膜和SiO2盖膜中的水分脱气。然后，在SiO2盖膜上形成Al2O3膜。随后，在氧化气氛中对Al 2 O 3进行热处理，由此加速其表面的氧化。之后，在Al 2 O 3膜上形成铂膜，PLZT膜和IrO 2膜并构图，由此形成包括上电极，电容绝缘膜和下电极的铁电电容器。

8. 发明公开

EP1096555A3 Semiconductor device and production thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：EP1096555A3
公开(公告)日：2005-11-02
申请号：EP00123066.3
申请日：2000-10-24
申请人： NEC CORPORATION
发明人： Tatsumi, Toru
IPC分类号： H01L21/316
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/02304 , H01L21/02356 , H01L21/31691 , H01L28/56
摘要： In forming a metal oxide dielectric film of perovskite type for capacitor, an array of lower electrodes and a crystallization-assisting conductive film are simultaneously formed. The crystallization-assisting conductive film is formed outside the lower electrode array, at a distance of about 10 µm or less from the outermost lower electrodes, in a width of 20 µm or more. Then, a metal oxide dielectric film is formed thereon. Since the crystallization-assisting conductive film assists the crystallization of metal oxide dielectric film, capacitor elements which are superior in properties and reliability even when the capacitor elements are produced in a fine structure is obtained.

9. 发明授权

EP0708983B1 CHEMICAL VAPOR DEPOSITION PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS 失效
标题翻译：分层超级电网MATER ALIEN在化工分离法从气相法
公开(公告)号：EP0708983B1
公开(公告)日：2001-09-26
申请号：EP94923294.6
申请日：1994-06-30
申请人： SYMETRIX CORPORATION , Olympus Optical Co., Ltd.
发明人： PAZ DE ARAUJO, Carlos, A. , WATANABE, Hitoshi , SCOTT, Michael, C. , MIHARA, Takashi
IPC分类号： H01L21/316 , H01L21/314
CPC分类号： C23C16/45561 , C23C16/0218 , C23C16/40 , C23C16/56 , C30B7/00 , C30B7/005 , C30B25/02 , C30B29/68 , H01C7/1013 , H01L21/02197 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A substrate is prebaked in an oxygen furnace. A thin film of layered superlattice oxide is formed on the substrate by a chemical vapor deposition process. The film is RTP baked to provide grains with a mixed phase of A-axis and C-axis orientation. The film may be treated by ion implantation prior to the RTP bake and oxygen furnace annealed after the RTP bake. An electrode is deposited on the layered superlattice thin film and then the film and electrode are oxygen furnace annealed.

10. 发明公开

EP0489519A2 Sol-gel processing of piezoelectric and ferroelectric films 失效
标题翻译： Sol-Gel Verfahrenfürpiezoelektrische und ferroelektrische Schichten。
公开(公告)号：EP0489519A2
公开(公告)日：1992-06-10
申请号：EP91310761.1
申请日：1991-11-21
申请人： RAYTHEON COMPANY
发明人： Bernstein, Steven D. , Wahl, Joseph Matthew
IPC分类号： H01L21/314 , H01L21/316 , C23C18/12 , H01L21/3205
CPC分类号： H01L41/1876 , H01L21/02197 , H01L21/02356 , H01L21/31691 , H01L28/55 , H01L41/318
摘要： A method of providing a perovskite film having a general chemical formula of ABO₃ over a substrate includes the steps of providing (42,44,46,48,50,52) a sol-gel solution of composition of A and B using alkoxides in organic salts and depositing (54) the sol-gel solution as a thin film over the substrate . The film is converted into the perovskite film by rapidly heating (56) the thin film. Preferred perovskite materials include lead zirconate titanate. In one embodiment the films are deposited from sol-gel solutions containing lead, zirconium, and titanium and are converted (58) to a lead zirconate titante crystalline material in an atmosphere of oxygen to provide a ferroelectric dielectric having a high remanent polarization. In an alternate embodiment (Fig. 3), the sol-gel solution of lead, zirconium, and titanium is converted (62) to lead zirconate titanate crystalline material in a non-oxidizing atmosphere of an inert gas, nitrogen, or forming gas to provide materials having high dielectric constants and high and substantially linear dielectric constants with respect to applied voltages.
摘要翻译：在衬底上提供具有一般化学式ABO 3的钙钛矿膜的方法包括以下步骤：使用有机物中的醇盐提供（42,44,46,48,50,52）A和B组合物的溶胶 - 凝胶溶液盐，并将溶胶 - 凝胶溶液（54）作为薄膜沉积在基材上。通过快速加热（56）薄膜，将膜转变成钙钛矿膜。优选的钙钛矿材料包括锆钛酸铅。在一个实施方案中，薄膜由含有铅，锆和钛的溶胶 - 凝胶溶液沉积，并在氧气氛中将其转化为锆锆酸铅钛结晶材料，以提供具有高残留极化的铁电电介质。在替代实施方案（图3）中，将铅，锆和钛的溶胶 - 凝胶溶液在惰性气体，氮气或形成气体的非氧化性气氛中转化（62）为锆钛酸铅晶体材料，提供相对于施加的电压具有高介电常数和高且基本线性介电常数的材料。

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