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1. 发明公开

EP0794569A3 Amorphous carbon film, formation process thereof, and semiconductor device making use of the film 失效
标题翻译：无定形碳膜，其制造方法及半导体电路使用该膜
公开(公告)号：EP0794569A3
公开(公告)日：1998-04-08
申请号：EP97103713.0
申请日：1997-03-06
申请人： NEC CORPORATION
发明人： Endo, Kazuhiko , Tatsumi, Toru
IPC分类号： H01L21/768 , H01L21/314 , C23C16/26
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3146 , H01L21/76801 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： This invention relates to a fluorine-containing amorphous carbon film with benzene rings distributed therein. The film is formed by plasma CVD while using an aromatic hydrocarbon gas and a fluoride gas as raw materials. This invention is also concerned with a semiconductor layer which features use of the fluorine-containing amorphous carbon film as an interlayer insulating film. The fluorine-containing amorphous carbon film has a low specific dielectric constant, does not contain much intrafilm water and is superior in heat resistance, so that the fluorine-containing amorphous carbon film permits application of a known conductive-pattern-forming process, which requires heat treatment at elevated temperature, and can provide a semiconductor device with reduced signal delays.

2. 发明公开

EP0709901A1 Silicon photosensitive element 失效
标题翻译： Lichtempfindliches Bauelement aus Silicium
公开(公告)号：EP0709901A1
公开(公告)日：1996-05-01
申请号：EP95115547.2
申请日：1995-10-02
申请人： NEC CORPORATION
发明人： Tatsumi, Toru
IPC分类号： H01L31/0352 , H01L31/107 , H01L31/105
CPC分类号： H01L31/035254 , B82Y20/00 , H01L31/105 , H01L31/107
摘要： A groove (4) is formed on the surface of a silicon substrate (1) by way of etching. A silicon device (3) for a driver of a photosensitive element is formed on the surface of the substrate (1) where the groove (4) is not formed. With the groove, a super lattice structure (6) of Si and Si 1-x Ge x is buried to form a photosensing portion (2). The photosensing portion is formed with an avalanche photodiode or a PIN diode. The photosensing portion is formed to have no step with the surface of the substrate. On the other hand, SOI silicon oxide layer is provided on the back side of the substrate to form the structure of SOI substrate. By this, a photo reflection layer (7) of SiO₂ layer is provided below the photosensing portion (2). Thus, a silicon type photosensing element and the silicon device for driver can be formed on a common chip simultaneously for reducing production cost and for improving sensitivity and photo converting efficiency of the photosensing element.
摘要翻译：通过蚀刻在硅衬底（1）的表面上形成凹槽（4）。在没有形成槽（4）的基板（1）的表面上形成用于感光元件的驱动器的硅器件（3）。利用凹槽，Si和Si1-xGex的超晶格结构（6）被掩埋以形成感光部分（2）。光敏部分由雪崩光电二极管或PIN二极管形成。感光部形成为与基板的表面不具有台阶。另一方面，在衬底的背面设置SOI氧化硅层，形成SOI衬底的结构。由此，在感光部（2）的下方设置有SiO 2层的光反射层（7）。因此，可以在公共芯片上同时形成硅型光敏元件和驱动器用硅器件，以降低生产成本并提高光敏元件的灵敏度和光转换效率。

3. 发明授权

EP0803588B1 Vapor phase growth method and growth apparatus 失效
标题翻译：用于分离为气相沉积的方法，和设备
公开(公告)号：EP0803588B1
公开(公告)日：2001-06-27
申请号：EP97106165.0
申请日：1997-04-15
申请人： NEC CORPORATION
发明人： Tatsumi, Toru
IPC分类号： C23C16/18 , C23C16/52
CPC分类号： C23C16/52 , C23C16/448 , C23C16/452

4. 发明授权

EP0630055B1 Method for fabricating polycrystalline silicon having micro roughness on the surface 失效
标题翻译：生产多晶硅的具有微粗糙表面的方法
公开(公告)号：EP0630055B1
公开(公告)日：1998-09-23
申请号：EP94111698.0
申请日：1991-03-20
申请人： NEC CORPORATION
发明人： Watanabe, Hirohito , Tatsumi, Toru
IPC分类号： H01L29/94 , H01L29/04 , H01L21/20
CPC分类号： H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/90 , Y10S438/964

5. 发明公开

EP0689252A1 Semiconductor device 失效
标题翻译：半导体设备
公开(公告)号：EP0689252A1
公开(公告)日：1995-12-27
申请号：EP95110516.2
申请日：1991-03-20
申请人： NEC CORPORATION
发明人： Watanabe, Hirohito , Tatsumi, Toru
IPC分类号： H01L29/92
CPC分类号： H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A semiconductor device comprises a poly-crystalline silicon layer, a dielectric layer formed on said poly-crystalline silicon layer, and a conductive layer formed on said dielectric layer. The poly-crystalline silicon layer has an uneven surface including a plurality of convex portions and a plurality of concave portions, with said convex portions being defined by growing silicon grains, such as hemisherical-like silicon grains, or mushroom-like silicon grains, projecting from the surface of the silicon layer. A typical silicon grain has a diameter in range of 30 to 170nm.

6. 发明公开

EP0630055A2 Method for fabricating polycrystalline silicon having micro roughness on the surface 失效
标题翻译： Verfahren zum Herstellen von polykristallinem Silizium mit mikrorauherOberfläche。
公开(公告)号：EP0630055A2
公开(公告)日：1994-12-21
申请号：EP94111698.0
申请日：1991-03-20
申请人： NEC CORPORATION
发明人： Watanabe, Hirohito , Tatsumi, Toru
IPC分类号： H01L29/94 , H01L29/04 , H01L21/20
CPC分类号： H01L27/10817 , H01L28/82 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at the surface of the polycrystalline silicon layer. The polycrystalline silicon layer thus obtained has a large effective surface area and is suitable for a capacitor electrode because of its increased effective surface area.
摘要翻译：公开了一种制造具有粗糙表面的多晶硅的方法，其可用于电容器电极。该方法的特征在于以如下方式沉积多晶硅层，即在多晶硅层的表面引起硅晶粒。由此获得的多晶硅层具有大的有效表面积，由于其有效表面积增加，因此适用于电容器电极。

7. 发明授权

EP0768388B1 Method and apparatus for forming amorphous carbon film 失效
标题翻译：用于制备无定形碳膜的方法和装置
公开(公告)号：EP0768388B1
公开(公告)日：2002-01-23
申请号：EP96114340.1
申请日：1996-09-06
申请人： NEC CORPORATION
发明人： Endo, Kazuhiko , Tatsumi, Toru
IPC分类号： C23C16/26 , C23C16/44
CPC分类号： H01L21/02115 , C23C16/26 , C23C16/4401 , H01L21/02123 , H01L21/02274 , H01L21/3127 , Y10S438/905 , Y10S438/931
摘要： In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. In order to prevent the adhesion from depositing on the inner wall, at least a part of the inner wall of the reaction chamber is heated to a predetermined temperature or above such that an adhesion coefficient of the adhesion is 0. Alternatively, in order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bias imposed on a DC bias is applied to the electrically conductive reaction chamber.

8. 发明授权

EP0476684B1 Method for selective growth of a thin film on a patterned wafer 失效
标题翻译：一种用于薄膜的图案化衬底上的选择性生长方法
公开(公告)号：EP0476684B1
公开(公告)日：1998-07-08
申请号：EP91116032.3
申请日：1991-09-20
申请人： ANELVA CORPORATION , NEC CORPORATION
发明人： Aketagawa, Ken-ichi , Sakai, Junro , Tatsumi, Toru
IPC分类号： H01L21/20 , C30B25/02 , C30B29/06 , C30B25/18
CPC分类号： C30B29/06 , C30B25/18 , H01L21/02381 , H01L21/02395 , H01L21/02532 , H01L21/0262 , H01L21/02639

9. 发明公开

EP0794569A2 Amorphous carbon film, formation process thereof, and semiconductor device making use of the film 失效
标题翻译：无定形碳膜，其制造方法及半导体电路使用该膜
公开(公告)号：EP0794569A2
公开(公告)日：1997-09-10
申请号：EP97103713.0
申请日：1997-03-06
申请人： NEC CORPORATION
发明人： Endo, Kazuhiko , Tatsumi, Toru
IPC分类号： H01L21/768 , H01L21/314 , C23C16/26
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/312 , H01L21/3146 , H01L21/76801 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： This invention relates to a fluorine-containing amorphous carbon film with benzene rings distributed therein. The film is formed by plasma CVD while using an aromatic hydrocarbon gas and a fluoride gas as raw materials. This invention is also concerned with a semiconductor layer which features use of the fluorine-containing amorphous carbon film as an interlayer insulating film. The fluorine-containing amorphous carbon film has a low specific dielectric constant, does not contain much intrafilm water and is superior in heat resistance, so that the fluorine-containing amorphous carbon film permits application of a known conductive-pattern-forming process, which requires heat treatment at elevated temperature, and can provide a semiconductor device with reduced signal delays.
摘要翻译：本发明涉及的含氟无定形碳薄膜在其中具有分布式苯环。在使用芳族烃类气体和氟化物气体作为原料的电影是由等离子体CVD形成。本发明因此与哪些功能使用的含氟无定形碳薄膜作为层间绝缘膜 - 的半导体层关注。含氟无定形碳薄膜具有低的比介电常数，不包含，多膜内的水，并且在耐热性优异，所以没有公知的导电图案形成的过程，需要的含氟无定形碳薄膜许可应用在升高的温度下的热处理，并可以具有降低的信号延迟提供一种半导体器件。

10. 发明公开

EP0476480A1 Vacuum film forming apparatus 失效
标题翻译： Vorrichtung zum Herstellen einer Schicht im Vacuum。
公开(公告)号：EP0476480A1
公开(公告)日：1992-03-25
申请号：EP91115234.6
申请日：1991-09-10
申请人： ANELVA CORPORATION , NEC CORPORATION
发明人： AKETAGAWA, Ken-ichi c/o ANELVA CORPORATION , SAKAI, Junro c/o ANELVA CORPORATION , MURAKAMI, Shun-ichi c/o ANELVA CORPORATION , MUROTA, Hiroyoshi c/o ANELVA CORPORATION , Tatsumi, Toru
IPC分类号： C23C16/44 , C23C14/56 , C23C16/54
CPC分类号： C23C14/564 , C23C16/4582 , C23C16/54
摘要： A film forming apparatus comprises a vacuum vessel (6) having a first vacuum chamber (6a) with an associated first evacuating means (7) and a second vacuum chamber (6b) with an associated second evacuating means (9). A substrate heater (3) is arranged in the first vacuum chamber (6a) and a gas supplying means (8) is arranged in said second vacuum chamber (6b). A substrate holder (1) holds the film forming surface of a substrate (2) so that said film forming surface is oriented toward the second vacuum chamber. The substrate holder (1) is arranged so as to isolate said first and second vacuum chambers from each other.
摘要翻译：一种成膜装置包括具有第一真空室（6a）和相关联的第一抽空装置（7）的真空容器（6）和具有相关联的第二抽空装置（9）的第二真空室（6b）。基板加热器（3）布置在第一真空室（6a）中，气体供给装置（8）布置在所述第二真空室（6b）中。基板保持器（1）保持基板（2）的成膜表面，使得所述成膜表面朝向第二真空室。衬底保持器（1）被布置成将所述第一和第二真空室彼此隔离。

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