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1. 发明授权

US06316796B1 Single crystal silicon sensor with high aspect ratio and curvilinear structures 失效
标题翻译：具有高纵横比和曲线结构的单晶硅传感器及相关方法
公开(公告)号：US06316796B1
公开(公告)日：2001-11-13
申请号：US08652867
申请日：1996-05-23
申请人： Kurt E. Petersen , Nadim Maluf , Wendell McCulley , John Logan , Erno Klaasen , Jan Mark Noworolski
发明人： Kurt E. Petersen , Nadim Maluf , Wendell McCulley , John Logan , Erno Klaasen , Jan Mark Noworolski
IPC分类号： H01L2720
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814 , Y10S73/01
摘要： In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
摘要翻译：一方面，本发明提供一种包括第一单晶硅晶片层的半导体传感器。在第一晶片层中形成单晶硅结构。该结构包括两个相对布置的基本垂直的主表面和两个相对布置的大体水平的小的表面。主表面与次表面的纵横比至少为5：1。包括凹陷区域的载体被固定到第一晶片层，使得所述结构与凹陷区域相对地悬挂。

2. 发明授权

US06512255B2 Semiconductor pressure sensor device having sensor chip covered with protective member 失效
标题翻译：具有传感器芯片的半导体压力传感器装置覆盖有保护构件
公开(公告)号：US06512255B2
公开(公告)日：2003-01-28
申请号：US09841005
申请日：2001-04-25
申请人： Takashi Aoki , Yoshifumi Watanabe , Takashi Nomura
发明人： Takashi Aoki , Yoshifumi Watanabe , Takashi Nomura
IPC分类号： H01L2720
CPC分类号： G01L19/141 , G01L19/147 , H01L2224/48091 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A sensor device has a semiconductor sensor chip mounted on a resin package with which insert pins are insert-molded. The sensor chip and the pins are electrically connected to each other by bonding wires. An electrically insulating protective member covers the chip, the pins, and the wires. The protective member has a saturated swelling coefficient of approximately 7 wt % at most when the protective member is immersed into gasoline having a temperature of 20° C. Accordingly, bubbles are prevented from being produced in the protective member.
摘要翻译：传感器装置具有安装在树脂封装上的半导体传感器芯片，插入销被嵌入成型。传感器芯片和引脚通过接合线彼此电连接。电绝缘保护构件覆盖芯片，引脚和电线。当保护构件浸入温度为20℃的汽油中时，保护构件最多具有约7重量％的饱和溶胀系数。因此，防止在保护构件中产生气泡。

3. 发明授权

US06614065B2 Use of membrane properties to reduce residual stress in an interlayer region 失效
公开(公告)号：US06614065B2
公开(公告)日：2003-09-02
申请号：US10238081
申请日：2002-09-10
申请人： Dawai Zheng
发明人： Dawai Zheng
IPC分类号： H01L2720
CPC分类号： C23C14/5873 , C23C14/0005 , H01L21/28568 , Y10S438/927 , Y10S438/977 , Y10T428/24942
摘要： A method and apparatus comprising thinning a substrate sufficiently to allow it to be mechanically compliant with a material deposited on its surface is disclosed. The mechanical compliance allows a reduction in the interlayer stress generated by dissimilarities in the materials.

4. 发明授权

US06559487B1 High-vacuum packaged microgyroscope and method for manufacturing the same 有权
公开(公告)号：US06559487B1
公开(公告)日：2003-05-06
申请号：US09702846
申请日：2000-11-01
申请人： Seok-jin Kang , Youn-il Ko , Ho-suk Kim
发明人： Seok-jin Kang , Youn-il Ko , Ho-suk Kim
IPC分类号： H01L2720
CPC分类号： B81C1/0023 , B81B2201/0242 , B81C2203/0109 , B81C2203/019 , G01C19/56 , G01P1/023 , G01P15/0802
摘要： A high-vacuum packaged microgyroscope for detecting the inertial angular velocity of an object and a method for manufacturing the same. In the high-vacuum packaged microgyroscope, a substrate with an ASIC circuit for signal processing is mounted onto another substrate including a suspension structure of a microgyroscope in the form of a flip chip. Also, the electrodes of the suspension structure and the ASIC circuit can be exposed to the outside through polysilicon interconnection interposed between double passivation layers. The short interconnection between the suspension structure and the ASIC circuit can reduce the device in size and prevents generation of noise, thereby increasing signal detection sensitivity. In addition, by sealing the two substrates at low temperatures, for example, at 363 to 400° C. using co-melting reaction between metal, for example, Au, and Si in a vacuum, the degree of vacuum in the device increases.

5. 发明授权

US06210989B1 Ultra thin surface mount wafer sensor structures and methods for fabricating same 有权
标题翻译：超薄表面贴装晶片传感器结构及其制造方法
公开(公告)号：US06210989B1
公开(公告)日：2001-04-03
申请号：US09398969
申请日：1999-09-17
申请人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
发明人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
IPC分类号： H01L2720
CPC分类号： G01L9/0055 , G01L19/0084
摘要： There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.
摘要翻译：公开了一种半导体传感器装置，其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。第一玻璃晶片构件在底面处与手指和边缘静电结合，以气密地密封隔膜构件的传感器和手指。第一玻璃晶片包括在传感器上方的凹陷部，并且具有多个孔，其中每个孔与接触位置处的单独手指相关联，并且每个孔小于相关联的手指与接触位置对齐，其中每个接触位置可以通过第一玻璃晶片构件中的相关孔径进入。第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面，并且具有与第一玻璃晶片构件的多个孔对准的多个孔，并且包含一组用于联接到接触位置的密封销。

6. 发明授权

US06635910B1 Silicon strain gage having a thin layer of highly conductive silicon 有权
标题翻译：硅应变片具有薄的高导电性硅层
公开(公告)号：US06635910B1
公开(公告)日：2003-10-21
申请号：US09359012
申请日：1999-07-22
申请人： Chris Gross
发明人： Chris Gross
IPC分类号： H01L2720
CPC分类号： G01L1/18 , G01L1/2293
摘要： A semiconductor strain gage having an electrically resistive substrate layer and a layer of electrically conductive silicon supported by the substrate layer. The silicon layer can be an epitaxial silicon layer grown on a surface of the substrate layer or a diffused or ion-implanted layer formed in the surface of the substrate layer. Also, a force measuring and detecting device including a force responsive member and the above-described semiconductor strain gage attached to the force responsive member, the strain gage measuring forces applied to the force responsive member.
摘要翻译：一种具有电阻衬底层和由衬底层支撑的导电硅层的半导体应变片。硅层可以是在衬底层的表面上生长的外延硅层或者形成在衬底层的表面中的扩散或离子注入层。另外，一种力测量和检测装置，其包括力响应构件和附着到力响应构件的上述半导体应变计，施加到力响应构件的应变计测量力。

7. 发明授权

US06469330B1 Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections 有权
标题翻译：用于制造包括微结构和相关联的悬挂电互连的集成器件的工艺
公开(公告)号：US06469330B1
公开(公告)日：2002-10-22
申请号：US09422049
申请日：1999-10-20
申请人： Benedetto Vigna , Ubaldo Mastromatteo
发明人： Benedetto Vigna , Ubaldo Mastromatteo
IPC分类号： H01L2720
CPC分类号： H01L23/4821 , H01L23/5221 , H01L2924/0002 , H01L2924/00
摘要： An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.
摘要翻译：集成器件包括形成由至少一个气隙隔开的第一和第二区域的外延层。第一区域形成例如加速度计的悬挂质量。桥接元件在气隙上延伸并且具有电连接第一和第二区域的悬挂电连接线以及围绕所有侧面的电连接线的耐蚀刻材料的保护结构。保护结构由氮化硅的下部和碳化硅的上部形成，碳化硅在上侧和外侧围绕电连接线。

8. 发明授权

US06388279B1 Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
标题翻译：半导体衬底制造方法，半导体压力传感器及其制造方法
公开(公告)号：US06388279B1
公开(公告)日：2002-05-14
申请号：US09095131
申请日：1998-06-10
申请人： Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
发明人： Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
IPC分类号： H01L2720
CPC分类号： G01L9/0054 , B81C1/00357 , B81C2201/019 , G01L9/0042
摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.
摘要翻译：在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠。通过抛光使第一基板从其上表面变薄而形成隔膜。从第一基板的上表面形成到达连接孔的密封孔。在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

9. 发明授权

US06215137B1 Micromechanical sensor for scanning thermal imaging microscope and method of making the same 失效
标题翻译：用于扫描热成像显微镜的微机械传感器及其制作方法
公开(公告)号：US06215137B1
公开(公告)日：2001-04-10
申请号：US09132762
申请日：1998-08-12
申请人： Yoshihiko Suzuki , Shinya Hara
发明人： Yoshihiko Suzuki , Shinya Hara
IPC分类号： H01L2720
CPC分类号： G01Q60/58 , G01J5/40 , G01J5/44 , G01K7/028 , G01N25/72 , Y10S977/874
摘要： A probe is provided with a thermocouple made of a joint between a first metal material and a second metal material. The first metal material is formed on the surface of a flexible plate facing a substrate, continuously from the thermocouple portion. The surface of the flexible plate facing the substrate is formed with a first wiring conductive film, which is electrically connected to the first metal material and extends over the proximal end side area of the flexible plate.
摘要翻译：探针设置有由第一金属材料和第二金属材料之间的接头制成的热电偶。第一金属材料从热电偶部分连续地形成在面向基板的柔性板的表面上。面向衬底的柔性板的表面形成有第一布线导电膜，其与第一金属材料电连接并且在柔性板的近端侧区域上延伸。

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