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1. 发明授权

US06388279B1 Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof 失效
标题翻译：半导体衬底制造方法，半导体压力传感器及其制造方法
公开(公告)号：US06388279B1
公开(公告)日：2002-05-14
申请号：US09095131
申请日：1998-06-10
申请人： Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
发明人： Minekazu Sakai , Toshimasa Yamamoto , Yasutoshi Suzuki , Kenichi Yokoyama , Masakazu Terada , Eishi Kawasaki , Inao Toyoda
IPC分类号： H01L2720
CPC分类号： G01L9/0054 , B81C1/00357 , B81C2201/019 , G01L9/0042
摘要： In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.
摘要翻译：在半导体衬底的制造方法中，在第一衬底的下表面上形成用于将凹部连接到外部的凹部和连接孔，并且将第一衬底与大气压的气氛中的第二衬底层叠。通过抛光使第一基板从其上表面变薄而形成隔膜。从第一基板的上表面形成到达连接孔的密封孔。在真空中在密封孔中形成氧化膜，由此在压力基准室的压力降低到真空的同时密封连接孔。以这种方式，由于压力基准室在最终阶段被减压，所以可以防止由于研磨过程中的压力差导致的隔膜变形。

2. 发明授权

US06276207B1 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权
标题翻译：具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法
公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译：一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。加速度传感器具有传感器部分和处理部分。传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。传感器部分通过沟槽与处理部分电绝缘。

3. 发明授权

US06199430B1 Acceleration sensor with ring-shaped movable electrode 有权
标题翻译：带环形可动电极的加速度传感器
公开(公告)号：US06199430B1
公开(公告)日：2001-03-13
申请号：US09241137
申请日：1999-02-02
申请人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
发明人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
IPC分类号： G01P15125
CPC分类号： B81B7/0006 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P15/135 , G01P15/18 , G01P2015/0817 , G01P2015/0828 , G01V1/181 , H01H1/0036
摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.
摘要翻译：加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

4. 发明授权

US06250165B1 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06250165B1
公开(公告)日：2001-06-26
申请号：US09239781
申请日：1999-01-29
申请人： Minekazu Sakai , Inao Toyoda , Minoru Murata
发明人： Minekazu Sakai , Inao Toyoda , Minoru Murata
IPC分类号： G01L900
CPC分类号： B81C1/00158 , B81C2201/014 , G01L9/0042 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.
摘要翻译：半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

5. 发明授权

US5932921A Sensor chip having a diode portions and a thin-wall portion 失效
标题翻译：传感器芯片具有二极管部分和薄壁部分
公开(公告)号：US5932921A
公开(公告)日：1999-08-03
申请号：US958319
申请日：1997-10-27
申请人： Minekazu Sakai , Inao Toyoda , Nobukazu Oba
发明人： Minekazu Sakai , Inao Toyoda , Nobukazu Oba
IPC分类号： G01L9/00 , H01L21/3063 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84
摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.
摘要翻译：当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。该蚀刻通过电化学停止蚀刻进行。在该过程中，向隔膜部分施加电压。二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。

6. 发明授权

US07197939B2 Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US07197939B2
公开(公告)日：2007-04-03
申请号：US11046792
申请日：2005-02-01
申请人： Minekazu Sakai , Yasutoshi Suzuki
发明人： Minekazu Sakai , Yasutoshi Suzuki
IPC分类号： G01L21/12 , G01L9/00
CPC分类号： G01L9/0054 , G01L19/0627 , G01L19/0636
摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.
摘要翻译：压力传感器包括半导体基板和诸如玻璃基座的基座构件。半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。在压力传感器中，基座构件具有通向该隔膜的压力的通孔。通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

7. 发明授权

US5949118A Etching method for silicon substrates and semiconductor sensor 失效
标题翻译：硅衬底和半导体传感器的蚀刻方法
公开(公告)号：US5949118A
公开(公告)日：1999-09-07
申请号：US637128
申请日：1996-04-24
申请人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： G01L9/00 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

8. 发明申请

US20050172724A1 Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US20050172724A1
公开(公告)日：2005-08-11
申请号：US11046792
申请日：2005-02-01
申请人： Minekazu Sakai , Yasutoshi Suzuki
发明人： Minekazu Sakai , Yasutoshi Suzuki
IPC分类号： G01L9/00 , G01L9/06 , G01L19/00 , G01L19/06 , H01L29/84
CPC分类号： G01L9/0054 , G01L19/0627 , G01L19/0636
摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.
摘要翻译：压力传感器包括半导体基板和诸如玻璃基座的基座构件。半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。在压力传感器中，基座构件具有通向该隔膜的压力的通孔。通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

9. 发明授权

US06169316A Semiconductor pressure sensor including sensor chip fixed to package by adhesive 失效
标题翻译：半导体压力传感器包括通过粘合剂固定到包装上的传感器芯片
公开(公告)号：US06169316A
公开(公告)日：2001-01-02
申请号：US09287012
申请日：1999-04-06
申请人： Minekazu Sakai , Yasutoshi Suzuki
发明人： Minekazu Sakai , Yasutoshi Suzuki
IPC分类号： H01L2982
CPC分类号： G01L19/146 , G01L19/147
摘要： In a semiconductor pressure sensor, adhesive having a Young's modulus of equal to or less than 1×104 Pa such as silicone system gel is disposed between a bottom wall of a casing and a bottom wall of a sensor chip, and a space between side walls of the sensor chip and side walls of the casing is filled with adhesive having a Young's modulus of equal to or larger than 1×104 Pa, such as silicone system adhesive or epoxy system adhesive. Accordingly, temperature characteristics of the sensor chip can be improved without causing pressure leakage.
摘要翻译：在半导体压力传感器中，在壳体的底壁和传感器芯片的底壁之间设置有等于或小于1×10 4 Pa的杨氏模量的粘合剂，例如硅酮体系凝胶，并且在侧壁之间的空间传感器芯片和壳体的侧壁填充有杨氏模量等于或大于1×10 4 Pa的粘合剂，例如硅氧烷系粘合剂或环氧树脂体系粘合剂。因此，可以提高传感器芯片的温度特性，而不会引起压力泄漏。

10. 发明授权

US06240782B1 Semiconductor physical quantity sensor and production method thereof 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06240782B1
公开(公告)日：2001-06-05
申请号：US09247865
申请日：1999-02-11
申请人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
发明人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
摘要翻译：半导体物理量传感器包括基板，梁结构可动部和固定部。梁结构可移动部分由由多晶膜形成的四个锚固件悬挂。梁之间悬挂有矩形质量块。活动电极从质量两侧投射。第一固定电极和第二固定电极固定地设置在基板的表面上。基板具有叠层结构，其中在基板上层压氧化膜，附着膜，绝缘膜，导电膜和绝缘膜。由导电膜形成的锚固件与连接膜电连接。在锚上方设置由铝膜制成的电极垫。由于该结构能够使固定膜的电位固定，所以可以降低寄生电容。

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