专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2021254241A1 PHASE CHANGE DEVICE 审中-公开
公开(公告)号：WO2021254241A1
公开(公告)日：2021-12-23
申请号：PCT/CN2021/099344
申请日：2021-06-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM (CHINA) CO., LIMITED
发明人： LI, Ning , SADANA, Devendra, K.
IPC分类号： H01L45/00 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C13/0097 , G11C2013/0092 , G11C2213/50 , H01L45/06 , H01L45/1233 , H01L45/128 , H01L45/14 , H01L45/1608
摘要： A phase change device (PCD) has a first and second semiconductor layer. The first semiconductor layer made of a first semiconductor material and has a first semiconductor thickness, a first interface surface, and a first electrode surface. The first interface surface and first electrode surface are on opposite sides of the first semiconductor layer. The first semiconductor material can transition between a first amorphous state and a first crystalline state at one or more first conditions. The second semiconductor layer is made of a second semiconductor material and has a second semiconductor thickness, a second interface surface, and a second electrode surface. The second interface surface and second electrode surface are on opposite sides of the second semiconductor layer. The first interface surface and the second interface surface are in electrical, physical, and chemical contact with one another at an interface. The second semiconductor material can transition between a second amorphous state and a second crystalline state at one or more second conditions. A first electrode in physical and electrical contact with the first electrode surface of the first semiconductor layer and a second electrode in physical and electrical contact with the second electrode surface of the second semiconductor layer. The first conditions and second conditions are different. Therefore, the first and second semiconductor materials can be in different amorphous and/or crystalline states. The layers can have split amorphous/crystalline states. By controlling how the layers are split, the PCD can be in different resistive states.

2. 发明申请

WO2022268416A1 PULSING SYNAPTIC DEVICES BASED ON PHASE-CHANGE MEMORY TO INCREASE THE LINEARITY IN WEIGHT UPDATE 审中-公开
公开(公告)号：WO2022268416A1
公开(公告)日：2022-12-29
申请号：PCT/EP2022/063616
申请日：2022-05-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED
发明人： CARTER, Fabia , BRIGHTSKY, Matthew Joseph , KIM, Wanki , BOUVIER, Maxence , KIM, SangBum
IPC分类号： G11C11/54 , G11C13/00 , G06N3/061 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0069 , G11C2013/0092 , G11C2213/79
摘要： According to one embodiment, a method, computer system, and computer program product for increasing linearity of a weight update of a phase change memory (PCM) cell is provided. The present invention may include applying a RESET pulse to amorphize the phase change material of the PCM cell; responsive to applying the RESET pulse, applying an incubation pulse to the PCM cell; and applying a plurality of partial SET pulses to incrementally increase the conductance of the PCM cell.

3. 发明申请

WO2022010692A1 READING A MULTI-LEVEL MEMORY CELL 审中-公开
公开(公告)号：WO2022010692A1
公开(公告)日：2022-01-13
申请号：PCT/US2021/039539
申请日：2021-06-29
申请人： MICRON TECHNOLOGY, INC.
发明人： ROBUSTELLI, Mattia , PELLIZZER, Fabio , TORTORELLI, Innocenzo , PIROVANO, Agostino
IPC分类号： G11C11/56 , G11C13/00 , G11C11/5678 , G11C13/004 , G11C13/0061 , G11C13/0064 , G11C13/0069 , G11C2013/0045 , G11C2013/0078 , G11C2013/0092 , G11C7/1051 , G11C7/1096
摘要： Methods, systems, and devices for reading a multi-level memory cell are described. The memory cell may be configured to store three or more logic states. The memory device may apply a first read voltage to a memory cell to determine a logic state stored by the memory cell. The memory device may determine whether a first snapback event occurred and apply a second read voltage based on determining that the first snapback event failed to occur based on applying the first read voltage. The memory device may determine whether a second snapback event occurred and determine the logic state based on whether the first snapback event or the second snapback event occurred.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式