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1. 发明授权

US06607594B2 Method for producing silicon single crystal 有权
公开(公告)号：US06607594B2
公开(公告)日：2003-08-19
申请号：US10020574
申请日：2001-12-18
申请人： Hideki Fujiwara , Manabu Nishimoto , Isamu Miyamoto , Hiroshi Morita
发明人： Hideki Fujiwara , Manabu Nishimoto , Isamu Miyamoto , Hiroshi Morita
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for producing a silicon single crystal, the method being capable of suppressing the dislocation of a single crystal. When a silicon single crystal is produced by a Czochralski method in which a horizontal magnetic field or a cusp magnetic field is applied and the single crystal during growth is dislocated, the single crystal with dislocations is dissolved in a nonmagnetic field condition and thereafter a magnetic field is applied again to pull up the silicon single crystal. The flow rate of argon gas is designed to be 100 L/min or more and the pressure in a furnace is designed to be 6700 pa or less when the single crystal with dislocations is dissolved.

2. 发明授权

US06328795B2 Process for growth of defect free silicon crystals of arbitrarily large diameters 有权
标题翻译：生长任意大直径的无缺陷硅晶体的方法
公开(公告)号：US06328795B2
公开(公告)日：2001-12-11
申请号：US09344709
申请日：1999-06-25
申请人： Robert J. Falster , Harold W. Korb
发明人： Robert J. Falster , Harold W. Korb
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/00 , Y10T117/1032 , Y10T117/106 , Y10T117/1072
摘要： A process for growing single crystal silicon ingots which are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. No portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown. The achievement of defect free ingots is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.
摘要翻译：生长单晶硅锭的方法，其基本上不含聚集的固有点缺陷。锭通常根据Czochralski法生长。锭的任何部分都不会冷却到低于温度TA的温度，在铸锭生长期间发生铸锭内部点缺陷的凝聚。因此，无缺陷锭的实现与工艺参数（例如拉速率）和系统参数（例如锭中的轴向温度梯度）脱钩。

3. 发明授权

US06228167B1 Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US06228167B1
公开(公告)日：2001-05-08
申请号：US09297678
申请日：1999-05-09
申请人： Makoto Kuramoto , Tetsuhiro Iida
发明人： Makoto Kuramoto , Tetsuhiro Iida
IPC分类号： C30B1500
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： In the apparatus according to the present invention, self-weight of a single crystal is moved in soft manner when the single crystal being pulled up is gripped by grippers, and driving of pulling operation after self-weight movement is performed by a single driving source, and it is aimed to prevent contamination and dislocation of the single crystal by arranging all driving units outside a vacuum chamber for storing the single crystal. There is provided a support member 70 for supporting a portion with larger diameter 5 under a seed crystal 3, and the support member 70 is provided with a through-hole, which is communicated with outer peripheral portion via a slit 74, and it can be rotated in horizontal direction between a non-holding position and a holding position by the motor 40. Position of the support member 70 is controlled in vertical direction with respect to the seed crystal holder 2, and when it is out of vertical position control operation, the support member 70 is integrally moved with the seed crystal holder 2 in vertical direction by transmitting motive power of the seed crystal pulling means 20, and the driving sources are arranged outside the vacuum chamber for storing single crystal.
摘要翻译：在根据本发明的装置中，当被提起的单晶被夹持器夹持时，单晶的自重以柔和的方式移动，并且通过单个驱动源执行自重移动之后的拉动操作的驱动并且旨在通过将所有驱动单元布置在用于存储单晶的真空室外部来防止单晶的污染和位错。设置有用于在籽晶3下支撑具有较大直径5的部分的支撑构件70，并且支撑构件70设置有通过狭缝74与外周部分连通的通孔，并且其可以是通过电动机40在非保持位置和保持位置之间在水平方向上旋转。支撑构件70的位置相对于晶种保持器2在垂直方向上被控制，并且当其处于垂直位置控制操作时，支撑构件70通过发射晶种牵引装置20的动力而沿着垂直方向与籽晶保持器2整体移动，并且驱动源布置在用于存储单晶的真空室的外侧。

4. 发明授权

US06669776B2 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates 失效
公开(公告)号：US06669776B2
公开(公告)日：2003-12-30
申请号：US10211627
申请日：2002-08-02
申请人： Hilton F. Glavish , Hideyuki Isozaki , Keiji Maishigi , Kentaro Fujita
发明人： Hilton F. Glavish , Hideyuki Isozaki , Keiji Maishigi , Kentaro Fujita
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/007 , C30B15/206 , C30B15/305 , Y10T117/10 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

5. 发明授权

US06500255B2 Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects 有权
标题翻译：用于生长硅晶体的方法，其允许工艺条件的变化同时抑制聚集的固有点缺陷的形成
公开(公告)号：US06500255B2
公开(公告)日：2002-12-31
申请号：US09853232
申请日：2001-05-11
申请人： Robert J. Falster , Vladimir Voronkov , Paolo Mutti
发明人： Robert J. Falster , Vladimir Voronkov , Paolo Mutti
IPC分类号： C30B1500
CPC分类号： C30B15/206 , C30B15/203 , C30B29/06 , C30B33/00
摘要： A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with the Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900° C. is controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G0 is allowed to vary axially within this region, due to changes in v or G0, between a minimum and maximum value by at least 5%.
摘要翻译：用于生长具有基本上没有附聚的固有点缺陷的轴对称区域的单晶硅锭的方法。锭通常按照Czochralski法生长; 然而，将锭从凝固温度冷却至超过约900℃的温度的方式被控制以允许本征点缺陷的扩散，使得在该轴向上不形成聚集的缺陷对称区域。因此，由于v或G0的变化，最小值与最大值之间的比例v / G0在该区域内轴向变化至少5％。

6. 发明授权

US06387177B1 Method for manufacturing a segmented crystal 有权
标题翻译：分割晶体的制造方法
公开(公告)号：US06387177B1
公开(公告)日：2002-05-14
申请号：US09628901
申请日：2000-07-31
申请人： Lothar Ackermann
发明人： Lothar Ackermann
IPC分类号： C30B1500
CPC分类号： C30B33/06 , C30B15/00 , C30B15/04 , C30B29/28
摘要： The present invention relates to a method for manufacturing a crystal with at least two segments, wherein adjacent segments differ by at least one characteristic. The different segments can, for example, be of different materials, or have a different doping agent. The method makes possible the manufacturing of segmented crystals with high crystal quality, and as planar joining surfaces between the individual segments as possible. This is achieved in that the segmented crystal is grown directly from the molten mass.
摘要翻译：本发明涉及一种制造具有至少两个片段的晶体的方法，其中相邻片段至少有一个特征不同。不同的区段可以例如是不同的材料，或具有不同的掺杂剂。该方法使得可以制造具有高晶体质量的分段晶体，并且尽可能地在各个段之间作为平面连接表面。这是因为分段晶体直接从熔融体生长。

7. 发明授权

US06284040B1 Process of stacking and melting polycrystalline silicon for high quality single crystal production 失效
标题翻译：多晶硅堆垛和熔化工艺为高品质单晶生产
公开(公告)号：US06284040B1
公开(公告)日：2001-09-04
申请号：US09229540
申请日：1999-01-13
申请人： John D. Holder , Hariprasad Sreedharamurthy
发明人： John D. Holder , Hariprasad Sreedharamurthy
IPC分类号： C30B1500
CPC分类号： C30B15/02
摘要： An improved process for forming a single crystal silicon ingot from solid, varying sized chunks of polycrystalline silicon source material according to the Czochralski method. The process includes classifying each chunk of source material by size, placing chunks of source material into a crucible to form a stack in the crucible. The chunks are generally placed within at least three regions of the crucible that are pre-selected according to the size classifications of the chunks. The stack within the crucible is melted in an inert environment at an elevated temperature to form a source melt, and the temperature of the crucible and the source melt is stabilized to an equilibrium level suitable for crystal growth. The single crystal silicon ingot is pulled from the source melt according to the Czochralski method. In another aspect, the step of melting the stack is taken while the crucible has an ambient pressure that is greater than an ambient pressure when the step of stabilizing the temperature is taken.
摘要翻译：根据Czochralski方法从固体不同大小的多晶硅源材料块形成单晶硅锭的改进方法。该过程包括按照大小对每个源材料块进行分类，将源材料块放入坩埚中以在坩埚中形成堆叠。这些块通常放置在坩埚的至少三个区域中，这些区域根据块的尺寸分类被预先选择。坩埚内的叠层在高温下在惰性环境中熔融，形成源熔体，坩埚和源熔体的温度稳定在适合于晶体生长的平衡水平。根据Czochralski法将单晶硅锭从源熔体中拉出。另一方面，当采用稳定温度的步骤时，在坩埚具有大于环境压力的环境压力的同时，采取熔化堆叠的步骤。

8. 发明授权

US06632280B2 Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal 有权
标题翻译：用于生长单晶的装置，利用该装置和单晶制造单晶的方法
公开(公告)号：US06632280B2
公开(公告)日：2003-10-14
申请号：US09937132
申请日：2001-09-21
申请人： Ryoji Hoshi , Koji Kitagawa , Izumi Fusegawa , Tomohiko Ohta
发明人： Ryoji Hoshi , Koji Kitagawa , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： An apparatus for growing a single crystal (20) comprising at least a main chamber (1) enclosing a crucible (5, 6) for accommodating a raw material melt (4) and a heater (7) for heating the raw material melt and a pulling chamber (2) continuously provided above the main chamber, into which a grown single crystal is pulled and stored, wherein the apparatus further comprises a cooling cylinder (11) that extends at least from a ceiling of the main chamber toward a raw material melt surface so as to surround a single crystal under pulling (3) and is forcibly cooled with a cooling medium, and an auxiliary cooling member (13) extending below the cooling cylinder and having a cylindrical shape or a shape tapered toward the downward direction. There is provided an apparatus for growing a single crystal that can exert cooling effect on a grown single crystal to the maximum extent so as to accelerate the crystal growth rate and safely produce a single crystal without leakage of cooling medium due to breakage etc.
摘要翻译：包括至少包围坩埚的主室（ 1 ）的单晶生长装置（ 20 用于容纳原材料熔体（ 4 ）的加热器（ 7 < / BOLD> ），用于加热原料熔体和在主室上方连续设置的拉动室（ 2 ），拉出并存储生长的单晶，其中所述装置还包括至少从主室的天花板朝向原料熔体表面延伸的冷却圆筒（ 11 PDAT>），以围绕单晶体（ 3 ），并用冷却介质强制冷却，并在下方延伸的辅助冷却构件（ 13 ）具有圆筒形状或朝向下方向逐渐变细的形状。提供了一种用于生长可以最大程度地对生长的单晶施加冷却效果的单晶的装置，以便加速晶体生长速率并且安全地生产单晶，而不会由于断裂等导致冷却介质的泄漏。 PTEXT>

9. 发明授权

US06464777B2 Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal 有权
标题翻译：铌酸锂或钽酸锂的单晶及其光学元件，以及用于生产氧化物单晶的工艺和设备
公开(公告)号：US06464777B2
公开(公告)日：2002-10-15
申请号：US09754187
申请日：2001-01-05
申请人： Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Shigeyuki Kimura
发明人： Kenji Kitamura , Yasunori Furukawa , Shunji Takekawa , Shigeyuki Kimura
IPC分类号： C30B1500
CPC分类号： C30B15/12 , C30B15/00 , C30B29/30 , Y10T117/10
摘要： A stoichiometric single crystal of lithium niobate or lithium tantalate is produced by pulling a single crystal of lithium niobate or lithium tantalate having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/ (Ta2O5+Li2O) of at least 0.490 and less than 0.500, from a melt of a composition having a molar excess of Li over a stoichiometric composition of lithium niobate or lithium tantalate. The single crystal has 0.1 to 3 mol % of at least one element selected from the group consisting of Mg, Zn, Sc and In based on a total amount of elements Nb and Li, or a total amount of elements Ta and Li. The single crystal has substantially no absorption in the visible light region.
摘要翻译：铌酸锂或钽酸锂的化学计量单晶通过将具有至少0.490摩尔分数的Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O /（Ta 2 O 5 + Li 2 O）的摩尔分数的铌酸锂或钽酸锂的单晶拉伸并且小于 0.500，来自具有摩尔过量的Li的组合物的熔体，其化学计量组成为铌酸锂或钽酸锂。基于元素Nb和Li的总量或元素Ta和Li的总量，单晶具有选自Mg，Zn，Sc和In中的至少一种元素的0.1至3mol％。单晶在可见光区域基本上没有吸收。

10. 发明授权

US06364947B1 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 失效
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US06364947B1
公开(公告)日：2002-04-02
申请号：US09661985
申请日：2000-09-14
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置范围±5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在硅单晶生长期间，控制炉温，使得温度梯度差DELTAG（= Ge-Gc）不大其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm），在晶体的固 - 液界面附近，在1420℃和1350℃之间的晶体下降温度区域中，或在硅熔点和1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

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