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1. 发明申请

US20140103492A1 SILICON WAFER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20140103492A1
公开(公告)日：2014-04-17
申请号：US14122356
申请日：2012-05-14
申请人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
发明人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
IPC分类号： H01L21/02 , H01L29/34
CPC分类号： H01L21/02024 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3221 , H01L29/30 , H01L29/34
摘要： The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要翻译：本发明提供一种通过CZ方法生长的无缺陷硅单晶制造硅晶片的方法，该方法包括：制备通过对无缺陷的硅单晶进行切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。因此，本发明的目的是提供一种可以以高产率制造硅晶片的方法，将LPD降低到最小的硅晶片，在检查步骤中具有低故障发生率的硅晶片，以及出货阶段

2. 发明申请

US20090232359A1 METHOD FOR DETERMINING DISTANCE BETWEEN REFERENCE MEMBER AND MELT SURFACE, METHOD FOR CONTROLLING LOCATION OF MELT SURFACE USING THE SAME, AND APPARATUS FOR PRODUCING SILICON SINGLE CRYSTAL 有权
标题翻译：用于确定参考构件和熔融表面之间的距离的方法，用于控制使用其的熔融表面的位置的方法，以及用于生产硅单晶的装置
公开(公告)号：US20090232359A1
公开(公告)日：2009-09-17
申请号：US12225918
申请日：2007-01-31
申请人： Masahiko Urano , Izumi Fusegawa
发明人： Masahiko Urano , Izumi Fusegawa
IPC分类号： G06K9/00
CPC分类号： C30B15/305 , C30B15/26 , C30B30/04
摘要： The present invention is a method for determining a relative distance between a reference member placed above a melt surface and the melt surface upon pulling a silicon single crystal out of a raw material melt in a crucible by a CZ method characterized by at least: pulling the silicon single crystal applying a magnetic field; taking a picture of a real image of the reference member and a mirror image of the reference member reflected on the melt surface with a detector; processing the picture taken of the real image and the mirror image of the reference member as different pictures by separating the picture taken; and calculating the relative distance between the real image and the mirror image of the reference member from the processed pictures to determine the relative distance between the reference member and the melt surface.
摘要翻译：本发明是一种确定在熔融表面上方的参考构件与熔融物表面之间的相对距离的方法，该参考构件通过CZ方法从坩埚中的原料熔体拉出硅单晶，其特征在于至少：拉动硅单晶施加磁场; 用检测器拍摄参考构件的真实图像和在熔体表面上反射的参考构件的镜像; 通过分离所拍摄的图片来处理作为不同图像的实际图像和参考构件的镜像; 以及从经处理的图像计算参考构件的实像和镜像之间的相对距离，以确定参考构件和熔体表面之间的相对距离。

3. 发明申请

US20070101926A1 METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL AND SILICON WAFER 审中-公开
标题翻译：硅单晶，硅单晶和硅晶体的制造方法
公开(公告)号：US20070101926A1
公开(公告)日：2007-05-10
申请号：US11620024
申请日：2007-01-04
申请人： Izumi FUSEGAWA , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
发明人： Izumi FUSEGAWA , Sadayuki Okuni , Nobuaki Mitamura , Tomohiko Ohta , Nobuo Katuoka
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , Y10T117/1032
摘要： The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, comprising the steps of: providing a seed crystal having a tip end with a sharp-pointed shape or a truncation thereof in which an angle of the tip end is 28° or less; keeping the tip end of the seed crystal at just above a silicon melt to heat it before bringing the tip end of the seed crystal into contact with the silicon melt; bringing the tip end of the seed crystal into contact with the silicon melt and immersing the seed crystal into the silicon melt to a desired diameter; and shifting to pull the single crystal, wherein a temperature variation at a surface of the silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of the seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要翻译：本发明是一种通过Czochralski法制造单晶硅的方法，而不进行Dash Necking方法，包括以下步骤：提供具有尖锐形状或截头尖端的晶种，其中，尖端为28°以下; 将晶种的尖端保持在硅熔体正上方，以使晶种的尖端与硅熔体接触; 使晶种的尖端与硅熔体接触并将晶种浸入硅熔体中至所需的直径; 并且移动以拉动单晶，其中，至少在使晶种的尖端与所述晶体接触的时间点至少保持在所述硅熔体的表面处的温度变化为±5℃以下硅熔化到移动点以拉动单晶。因此，在不使用Dash Necking法的情况下，通过Czochralski法生长硅单晶的方法中，可以提高生长不含位错的单晶的成功率，同时可以增加直径大的重硅单晶，其中，即使在生长晶体取向为<110>的硅单晶的情况下，也可以生长恒定直径部分的直径超过200mm。

4. 发明申请

US20060236919A1 Process for producing single crystal and silicon crystal wafer 有权
标题翻译：制造单晶硅晶片的方法
公开(公告)号：US20060236919A1
公开(公告)日：2006-10-26
申请号：US10568186
申请日：2004-08-13
申请人： Izumi Fusegawa , Nobuaki Mitamuria , Takahiro Yanagimachi
发明人： Izumi Fusegawa , Nobuaki Mitamuria , Takahiro Yanagimachi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/1068
摘要： The present invention is a method for producing a single crystal in accordance with Czochralski method by flowing an inert gas downward in a chamber 1 of a single crystal-pulling apparatus 11 and surrounding a single crystal 3 pulled from a raw material melt 2 with a gas flow-guide cylinder 4, wherein when a single crystal within N region outside OSF region generated in a ring shape in the radial direction of the single crystal is pulled, the single crystal within N region is pulled in a condition that flow amount of the inert gas between the single crystal and the gas flow-guide cylinder is 0.6 D(L/min) or more and pressure in the chamber is 0.6 D(hPa) or less, in which D (mm) is a diameter of the single crystal to be pulled. It is preferable that there is used the gas flow-guide cylinder that Fe concentration is 0.05 ppm or less, at least, in a surface thereof. Thereby, there is provided a method for producing a single crystal, wherein in the case that a single crystal is produced by an apparatus having a gas flow-guide cylinder in accordance with CZ method, the single crystal has low defect density and Fe concentration can be suppressed to be 1×1010 atoms/cm3 or less even in a peripheral part thereof.
摘要翻译：本发明是一种根据切克劳斯基法制造单晶的方法，该方法是使惰性气体在单晶拉制装置11的室1中向下流动，并围绕从原料熔体2拉出的单晶3与气体流动引导圆筒4，其中当拉伸在单晶体的径向方向上以环形产生的OSF区域外的N区域内的单晶时，N区域内的单晶在惰性流动量的条件下被拉单晶和气体导流筒之间的气体为0.6D（L / min）以上，室内的压力为0.6D（hPa）以下，其中D（mm）为单晶直径被拉。至少在其表面中优选使用气体导向气缸Fe浓度为0.05ppm以下。因此，提供了一种单晶的制造方法，其中，在通过具有根据CZ法的气体导向圆筒的装置制造单晶的情况下，单晶具有低缺陷密度，Fe浓度可以即使在其周边部分被抑制为1×10 10原子/ cm 3以下。

5. 发明授权

US5725661A Equipment for producing silicon single crystals 失效
标题翻译：硅单晶生产设备
公开(公告)号：US5725661A
公开(公告)日：1998-03-10
申请号：US699719
申请日：1996-07-01
申请人： Izumi Fusegawa , Toshiro Hayashi , Tomohiko Ohta , Masayuki Arai
发明人： Izumi Fusegawa , Toshiro Hayashi , Tomohiko Ohta , Masayuki Arai
IPC分类号： C30B15/00 , C30B15/26 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/305 , C30B15/26 , Y10S117/917 , Y10T117/10 , Y10T117/1008
摘要： An equipment for producing silicon single crystals based on an MCZ method, which enables an operator to be protected from dangerous exposure to magnetic field without involving increase in the size of the silicon single crystal production equipment. In the silicon single crystal production equipment based on the MCZ method, a growth furnace control apparatus for control of a pulling apparatus is located away from the pulling apparatus by a predetermined distance so that the intensity of magnetic field immediately close to the growth furnace control apparatus can become 300 gausses or less. A monitoring camera for observing the growing condition of the silicon single crystal is mounted to a window 5a of a growth furnace to be operatively connected to a monitor of the growth furnace control apparatus and to cause the growth furnace control apparatus to control the pulling apparatus on a remote control basis. In an experimental example, an accumulated magnetic field exposure value immediately close to the growth furnace control apparatus can be suppressed to less than 30% of its allowable maximum value and therefore the operator can continuously work highly safely.
摘要翻译：一种基于MCZ方法生产硅单晶的设备，其能够使操作者免受危险暴露于磁场而不涉及增加硅单晶生产设备的尺寸。在基于MCZ方法的硅单晶生产设备中，用于控制拉制装置的生长炉控制装置远离牵引装置远离预定距离，使得紧邻生长炉控制装置的磁场强度可以变成300高斯或更少。将用于观察硅单晶生长状态的监视摄像机安装在生长炉的窗口5a上，以可操作地连接到生长炉控制装置的监视器，并使成长炉控制装置控制拉制装置遥控基础。在实验例中，可以将紧接着生长炉控制装置的累积磁场暴露值抑制在其允许最大值的30％以下，因此操作者可以连续高效地工作。

6. 发明授权

US5386796A Method for testing quality of silicon wafer 失效
标题翻译：测试硅片质量的方法
公开(公告)号：US5386796A
公开(公告)日：1995-02-07
申请号：US850916
申请日：1992-03-13
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： C30B33/10 , C30B29/06 , C30B33/00 , C30B15/00
CPC分类号： C30B29/06 , C30B33/00
摘要： Quick and inexpensive determination of an aggregate of point defects in a grown silicon semiconductor single crystal bar is accomplished by a method which comprises cutting a wafer from a freshly grown silicon single crystal bar, etching the surface of this wafer with the mixture of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, treating the wafer with the mixture of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby giving rise to pits 2 and ripple patterns 1 therein, determining the density of the pits 2 and that of the ripple patterns 1, and rating the aggregate of point defects by virtue of the correlation between the densities of the pits 1 and the ripple patterns 1 and the aggregate of point defects.
摘要翻译：在生长的硅半导体单晶棒中快速且廉价地测定点缺陷的集合是通过一种方法实现的，该方法包括从新生成的硅单晶棒切割晶片，用氢氟酸和硝酸，从而减轻晶片的应变，用K2Cr2O7，氢氟酸和水的混合物处理晶片，从而在其中产生凹坑2和波纹图案1，确定凹坑2的密度和波纹图案1的密度，并且通过凹坑1的密度与波纹图案1和点缺陷的总和之间的相关性对点缺陷的总和进行评级。

7. 发明授权

US5340434A Process for producing silicon single crystal 失效
标题翻译：硅单晶生产工艺
公开(公告)号：US5340434A
公开(公告)日：1994-08-23
申请号：US11744
申请日：1993-02-01
申请人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/02 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00
摘要： A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.
摘要翻译：公开了一种制造硅单晶的方法，其包括以下步骤：在坩埚中提供硅熔体，将硅多晶硅晶粒提供给硅熔体，并从硅熔体中提取硅单晶。硅多晶体颗粒中的残留氢浓度大于10ppmwt且小于100ppmwt。该方法防止硅单晶多晶。

8. 发明授权

US5306387A Method for pulling up semiconductor single crystal 失效
标题翻译：提高半导体单晶的方法
公开(公告)号：US5306387A
公开(公告)日：1994-04-26
申请号：US713848
申请日：1991-06-12
申请人： Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/20 , C30B15/00 , C30B15/30 , C30B30/04 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/305
摘要： A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.
摘要翻译：通过在施加磁场的情况下拉起保持在石英玻璃坩埚中的半导体熔体的方法，通过在保持在石英玻璃坩埚中的半导体熔体的方法来产生沿长度方向具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定所述石英坩埚的水平超过5rpm，并根据所述单晶棒的拉伸长度改变施加到所述熔融半导体的所述磁场的强度。

9. 发明授权

US5262338A Method for fabrication of semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5262338A
公开(公告)日：1993-11-16
申请号：US850506
申请日：1992-03-13
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： H01L21/02 , H01L21/28 , H01L21/322 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.

10. 发明申请

US20100126409A1 Method of Manufacturing Single Crystal 有权
标题翻译：单晶制造方法
公开(公告)号：US20100126409A1
公开(公告)日：2010-05-27
申请号：US11988295
申请日：2006-04-27
申请人： Masahiro Sakurada , Izumi Fusegawa
发明人： Masahiro Sakurada , Izumi Fusegawa
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , C30B30/04
摘要： This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.
摘要翻译：本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量（O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以容易以高产率高产率生产。

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