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1. 发明授权

US6159438A Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 有权
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US6159438A
公开(公告)日：2000-12-12
申请号：US359078
申请日：1999-07-22
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322 , C01B33/26
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置的范围+/- 5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

2. 发明授权

US5968264A Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 失效
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US5968264A
公开(公告)日：1999-10-19
申请号：US109530
申请日：1998-07-02
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B15/00 , C30B15/14 , C30B15/22 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置的范围+/- 5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

3. 发明授权

US06364947B1 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same 失效
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和装置以及由其制造的硅单晶硅晶片
公开(公告)号：US06364947B1
公开(公告)日：2002-04-02
申请号：US09661985
申请日：2000-09-14
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka , Hideki Yamanaka
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , C30B15/22 , Y10S117/917 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/108 , Y10T117/1088
摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.
摘要翻译：在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于固液界面平均垂直位置范围±5 mm。还公开了根据Czochralski方法制造硅单晶的方法，其中在硅单晶生长期间，控制炉温，使得温度梯度差DELTAG（= Ge-Gc）不大其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm），在晶体的固 - 液界面附近，在1420℃和1350℃之间的晶体下降温度区域中，或在硅熔点和1400℃之间。该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

4. 发明授权

US6027562A Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method 有权
公开(公告)号：US6027562A
公开(公告)日：2000-02-22
申请号：US173931
申请日：1998-10-16
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

5. 发明授权

US5911821A Method of holding a monocrystal, and method of growing the same 失效
标题翻译：保持单晶的方法及其生长方法
公开(公告)号：US5911821A
公开(公告)日：1999-06-15
申请号：US923963
申请日：1997-09-05
申请人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
发明人： Eiichi Iino , Makoto Iida , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/00 , C30B15/30 , C30B15/32 , C30B29/06 , C30B15/04
CPC分类号： C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W
摘要翻译：公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm）。这使得可以安全可靠地拉出重的单晶。

6. 发明授权

US06348180B1 Silicon single crystal wafer having few crystal defects 有权
标题翻译：具有很少晶体缺陷的硅单晶晶片
公开(公告)号：US06348180B1
公开(公告)日：2002-02-19
申请号：US09492001
申请日：2000-01-26
申请人： Makoto Iida , Satoshi Suzuki , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Satoshi Suzuki , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.
摘要翻译：根据Czochralski法生产硅单晶的方法。单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长，和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm）在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力整个晶圆表面和硅单晶当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

7. 发明授权

US6120599A Silicon single crystal wafer having few crystal defects, and method for producing the same 有权
标题翻译：晶体缺陷少的硅单晶晶片及其制造方法
公开(公告)号：US6120599A
公开(公告)日：2000-09-19
申请号：US454841
申请日：1999-12-06
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/02 , H01L21/208
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206
摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.
摘要翻译：在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

8. 发明授权

US6120598A Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method 有权
标题翻译：具有很少晶体缺陷的硅单晶的制造方法和通过该方法制造的硅单晶和硅晶片
公开(公告)号：US6120598A
公开(公告)日：2000-09-19
申请号：US459849
申请日：1999-12-13
申请人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/14 , C30B29/06 , C30B15/08
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206
摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.
摘要翻译：根据切克劳斯斯基方法生长单晶，使得通过1150-1080℃的温度区的时间为20分钟或更短，或者使得单晶的一部分的长度对应于温度 1150-1080℃的区域的温度分布为2.0cm以下。或者，单晶生长使得通过1250-1200℃的温度区的时间为20分钟或更短，或者使得对应于1250℃的温度区的单晶的一部分的长度， 1200℃，温度分布为2.0cm以下。该方法既降低FPD（100个缺陷/ cm 2以下），LSTD，COP（10个缺陷/ cm 2以下）等所谓的内置缺陷的密度和尺寸，能够有效地制造具有在氧化物绝缘击穿电压特性方面，极好的芯片产量（80％以上）优异。

9. 发明授权

US6048395A Method for producing a silicon single crystal having few crystal defects 有权
标题翻译：具有晶体缺陷少的硅单晶的制造方法
公开(公告)号：US6048395A
公开(公告)日：2000-04-11
申请号：US197130
申请日：1998-11-20
申请人： Makoto Iida , Satoshi Suzuki , Eiichi Iino , Masanori Kimura , Shozo Muraoka
发明人： Makoto Iida , Satoshi Suzuki , Eiichi Iino , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/02 , H01L21/208 , H01L21/322 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N.sub.2 (V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N.sub.1 (V) and N.sub.2 (V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm.sup.2 /.degree.C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.
摘要翻译：根据Czochralski法生产硅单晶的方法。单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长，和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G值（mm2 /℃×min），其中F是单晶的拉伸速率（mm / min），G是沿着拉伸的平均晶体内梯度（DEG C./mm）在硅熔点的温度范围内的方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀引起的吸杂能力整个晶圆表面，硅单面当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开而没有出现OSF环的晶体晶片。

10. 发明授权

US5882397A Crystal pulling method 失效
标题翻译：水晶拉法
公开(公告)号：US5882397A
公开(公告)日：1999-03-16
申请号：US944869
申请日：1997-10-06
申请人： Eiichi Iino , Makoto Iida , Masahiko Urano , Masanori Kimura , Shozo Muraoka
发明人： Eiichi Iino , Makoto Iida , Masahiko Urano , Masanori Kimura , Shozo Muraoka
IPC分类号： C30B15/32 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/30 , Y10T117/1032 , Y10T117/1072
摘要： In a crystal pulling method in which a growing single crystal is initially pulled by a seed chuck and subsequently pulled by lifting jig in the middle of the pulling operation, the speed Va of the seed chuck relative to the lifting jig is decreased, while the rising speed Vb of the lifting jig increases, from a first point where switching of the pulling mechanism from the seed chuck to the lifting jig is started. The total speed Vt=Vb+Va is constantly maintained at a desired pulling speed V up to a third point where the shifting of the load from the seed chuck to the lifting jig is started. Subsequently, the total speed Vt is made less than the desired pulling speed V from the third point where the shifting of the load from the seed shuck to the lifting jig is started. This enables accurate growth of a crystal.
摘要翻译：在晶种牵引方法中，种子卡盘最初拉长生长的单晶，随后在牵引操作的中间通过提升夹具拉动，晶种卡盘相对于提升夹具的速度Va减小，同时上升从牵引机构从种子卡盘切换到提升夹具的第一点开始升降夹具的速度Vb增加。总速度Vt = Vb + Va恒定地保持在期望的牵引速度V直到第三点，其中负载从种子卡盘移动到提升夹具开始。随后，使总速度Vt小于从起子夹头到提升夹具的负载偏移开始的第三点的期望拉速V。这使得晶体的准确生长。

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