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    • 1. 发明申请
    • Method of and apparatus for removing contaminants from surface of a substrate
    • 从基材表面去除污染物的方法和设备
    • US20040144401A1
    • 2004-07-29
    • US10759093
    • 2004-01-20
    • Moon-hee LeeKun-tack LeeWoo-gwan ShimJong-ho Chung
    • C25F005/00
    • H01L21/67028B08B7/0057B08B7/02B24C1/003Y10S134/902
    • A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
    • 用于从基材表面除去污染物的清洁装置包括两部分:一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物,另一部分 包含气态反应物的流体被引导到基材的表面上,同时照射表面以引起反应物和表面上的有机污染物之间的化学反应,以化学去除有机污染物。 在清洗基板的方法中,物理和化学清洗过程以彼此分离的方式进行,使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。 因此,气溶胶在清洁基材中的有效性最大化。
    • 8. 发明申请
    • Wafer cleaning
    • 晶圆清洗
    • US20030015218A1
    • 2003-01-23
    • US10243486
    • 2002-09-12
    • Mario E. Bran
    • C25F001/00C25F003/30C25F005/00B08B006/00B08B003/00B08B003/12F26B003/34
    • H01L21/02041B06B3/00B08B3/12H01L21/67051H01L21/67057Y10S134/902
    • Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe. In one arrangement, fluid is sprayed onto both sides of a wafer while a probe is positioned close to an upper side. In another arrangement, a short probe is positioned with its end face close to the surface of a wafer, and the probe is moved over the wafer as it rotates. The probe may also be positioned through a central hole in a plurality of discs to clean a group of such elements at one time.
    • 使用兆声波能量清洁半导体晶片以搅拌施加到晶片上的清洁流体。 能量源振动将声能传递到流体中的细长探针。 探头有一个坚实的清洁杆和一个喇叭形或阶梯式的后底座。 在一种形式中,探针由一个部件制成,而另一种形式,杆安装在基座中的插座中。 这使得杆可以由与清洁溶液相容的材料制成,而基座可以是不同的材料。 声耦合到探针基座和换能器上的传热构件将热量从换能器传导出去。 用于传热构件和换能器的壳体支撑这些部件并且提供用于通过壳体引导冷却剂以控制换能器的温度的装置。 在另一种布置中,壳体的端部耦合在换能器和探头之间。 在一种布置中,当探针位于靠近上侧时,将流体喷射到晶片的两侧。 在另一种布置中,将短的探针定位成其端面靠近晶片的表面,并且探针在其旋转时在晶片上移动。 探针也可以通过多个盘中的中心孔定位,以一次清洁一组这样的元件。
    • 9. 发明申请
    • Methods for reducing contamination of semiconductor substrates
    • 减少半导体衬底污染的方法
    • US20020139388A1
    • 2002-10-03
    • US09820690
    • 2001-03-30
    • Robert ChebiDavid Hemker
    • C25F001/00C25F003/30C25F005/00B08B006/00B08B007/00
    • H01L21/67115B08B7/0071H01L21/67028H01L21/67103H01L21/67109Y10S414/135Y10S414/136Y10S414/137Y10S414/138Y10S414/139Y10S414/14Y10S438/904Y10S438/913
    • Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.
    • 提供了减少处理后的半导体衬底污染的方法。 所述方法包括加热经处理的基底以通过热解吸从基底表面除去吸附的化学物质。 热解吸可以原位或非原位进行。 可以通过对流,传导和/或辐射加热来加热衬底。 也可以通过用惰性等离子体处理处理的基板的表面来加热基板,在惰性等离子体中处理等离子体中的离子轰击衬底表面,提高其温度。 也可以通过在将衬底从处理室传送过程中向衬底施加热能和/或通过将衬底传送到传输模块(例如,装载锁)或第二处理室来进行热解吸, 加热。 通过在衬底表面上吹扫惰性气体可以提高运输过程中的热解吸。