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1. 发明申请

US20040144401A1 Method of and apparatus for removing contaminants from surface of a substrate 有权
标题翻译：从基材表面去除污染物的方法和设备
公开(公告)号：US20040144401A1
公开(公告)日：2004-07-29
申请号：US10759093
申请日：2004-01-20
发明人： Moon-hee Lee , Kun-tack Lee , Woo-gwan Shim , Jong-ho Chung
IPC分类号： C25F005/00
CPC分类号： H01L21/67028 , B08B7/0057 , B08B7/02 , B24C1/003 , Y10S134/902
摘要： A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.
摘要翻译：用于从基材表面除去污染物的清洁装置包括两部分：一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分包含气态反应物的流体被引导到基材的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。因此，气溶胶在清洁基材中的有效性最大化。

2. 发明申请

US20040018452A1 Method of treatment of porous dielectric films to reduce damage during cleaning 失效
标题翻译：处理多孔电介质膜以减少清洁过程中的损伤的方法
公开(公告)号：US20040018452A1
公开(公告)日：2004-01-29
申请号：US10412121
申请日：2003-04-11
发明人： Paul Schilling
IPC分类号： G03F007/20 , G03F007/40 , H01L021/311 , H01L021/31 , H01L021/469 , C25F001/00 , C25F003/30 , C25F005/00 , B08B006/00
CPC分类号： H01L21/02126 , B08B7/0021 , C03C15/00 , C03C17/30 , C03C23/0075 , C23C8/10 , C23C26/00 , C23C30/00 , G03F7/422 , G03F7/423 , H01L21/02343 , H01L21/3105 , H01L21/31058 , H01L21/31116 , H01L21/3121 , H01L21/3125 , H01L21/316 , H01L21/31629 , H01L21/31633 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A device, method, and system for treating low-k dielectric material films to reduce damage during microelectronic component cleaning processes is disclosed. The current invention cleans porous low-k dielectric material films in a highly selectivity with minimal dielectric material damage by first treating microelectronic components to a passivating process followed by a cleaning solution process.
摘要翻译：公开了一种用于处理低k电介质材料膜以减少微电子部件清洁过程中的损伤的装置，方法和系统。本发明通过首先将微电子部件处理成钝化过程，然后进行清洁溶液处理，以极高的选择性清洁多孔低k电介质材料膜，同时具有最小的介电材料损伤。

3. 发明申请

US20030029735A1 Pulsed arc molecular beam process 失效
标题翻译：脉冲分子束过程
公开(公告)号：US20030029735A1
公开(公告)日：2003-02-13
申请号：US10058362
申请日：2002-01-28
发明人： James F. Garvey , Gary S. Tompa , Stuart G. MacDonald
IPC分类号： H05F003/00 , C25F005/00 , C25F001/00 , C25F007/00 , C30B007/12
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/152 , C01B32/16 , C01B32/162 , C01B2202/02 , C30B25/00 , C30B29/02 , C30B29/605 , Y10S977/75 , Y10S977/844
摘要： A process for preparing a material in which a gas mixture is subjected to a a temperature of at least 1,000 degrees Celsius while its pressure increased to at least 1,000 Torr. The pressurized hot gas mixture, which contains inert gas and fullerene ions, is then quenched by decreasing its temperature to a temperature of less than 500 degrees Celsius in a period of less than about 1 millisecond, and by decreasing its pressure of to a pressure of less than about 1 Torr in a period of less than about 10 milliseconds.
摘要翻译：一种制备其中气体混合物经受至少1000摄氏度的温度同时其压力升至至少1000托的材料的方法。然后将含有惰性气体和富勒烯离子的加压热气体混合物在小于约1毫秒的时间内将其温度降至小于500摄氏度的温度，并通过将其压力降至在小于约10毫秒的时间内小于约1托。

4. 发明申请

US20020130030A1 METHOD OF DECOMPOSING HALOGENATED ALIPHATIC HYDROCARBON COMPOUNDS OR AROMATIC COMPOUNDS AND APPARATUS TO BE USED FOR THE SAME AS WELL AS METHOD OF CLARIFYING EXHAUST GAS AND APPARATUS TO BE USED FOR THE SAME 失效
标题翻译：分解氢化二烃化合物或芳族化合物的方法和用于相同方法的装置，作为澄清排气的方法和用于其的装置
公开(公告)号：US20020130030A1
公开(公告)日：2002-09-19
申请号：US09335711
申请日：1999-06-18
发明人： KINYA KATO , YASUTSUGU YAMADA , ETSUKO SUGAWA , MASANORI SAKURANAGA , AKIRA KURIYAMA , TAKESHI IMAMURA , YUJI KAWABATA
IPC分类号： C07C001/00 , C07C002/00 , C07C004/00 , C07C005/00 , C07C006/00 , B01D053/00 , A62D003/00 , C25F001/00 , C02F001/461 , C25F005/00 , C25F007/00 , B01D017/06
CPC分类号： A62D3/176 , A62D3/17 , A62D2101/20 , A62D2101/22 , B01D53/70 , C02F1/005 , C02F1/32 , C02F1/4618 , C02F1/4672 , C02F1/4674 , C02F2101/30 , C02F2101/36 , C02F2103/18 , C02F2201/46115 , C02F2201/46145 , C02F2209/04 , C02F2209/06 , Y02W10/37
摘要： A method for decomposing halogenated aliphatic hydrocarbon compounds or aromatic compounds characterized by contacting the compound to be decomposed with functional water under light irradiation, wherein the functional water is characterized by a hydrogen ion concentration (pH) of 1-4, an oxidation-reduction potential of 800-1500 mV (working electrode: platinum, reference electrode: silver-silver chloride) and a chlorine concentration of 5-150 mg/l, and the irradiation is carried out with light of a wavelength of 300 nm or more, with an intensity of 10 mW/cm2 or less. This method is carried out at room temperature under the atmospheric pressure. An apparatus for the method is also provided.
摘要翻译：一种分解卤代脂族烃化合物或芳香族化合物的方法，其特征在于在光照射下将待分解的化合物与官能水接触，其中官能水的特征在于氢离子浓度（pH）为1-4，氧化还原电位 800-1500mV（工作电极：铂，参比电极：银 - 氯化银）和氯浓度5-150mg / l，照射用波长300nm以上的光进行，强度为10mW / cm 2以下。该方法在常压下在室温下进行。还提供了一种用于该方法的装置。

5. 发明申请

US20020011253A1 METHODS FOR CLEANING MICROELECTRONIC SUBSTRATES USING ULTRADILUTE CLEANING LIQUIDS 失效
标题翻译：使用超声清洁液清洁微电子基板的方法
公开(公告)号：US20020011253A1
公开(公告)日：2002-01-31
申请号：US09411820
申请日：1999-10-01
发明人： Suraj Puri , Joseph Medeiros JR. , David Scott Becker , Natraj Narayanswami
IPC分类号： B08B007/00 , B08B003/12 , B08B006/00 , B08B007/02 , C25F001/00 , C25F003/30 , C25F005/00 , C23G001/00 , C03C023/00 , B08B005/04 , B08B009/20 , B08B001/02 , B08B003/00 , B08B003/14
CPC分类号： H01L21/02052 , B08B3/08 , B08B3/12 , C03C23/0075 , C11D3/2017 , C11D7/06 , C11D7/261 , C11D11/0047 , C11D11/007 , H01L21/67057 , Y10S134/902
摘要： A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.
摘要翻译：使用与声能结合的清洁液清洁制品的表面的方法。优选地，将诸如氨气的清洁增强物质的超稀释浓度溶解在诸如过滤的去离子水的液体溶剂中以形成清洁液体。使清洗液与待清洁的表面接触。在这种接触期间，声能被施加到液体。任选地，待清洁的表面可以在清洁之前被氧化，例如通过臭氧化水。

6. 发明申请

US20030215751A1 Method of removing resist using functional water and device therefor 审中-公开
标题翻译：使用功能水除去抗蚀剂的方法及其装置
公开(公告)号：US20030215751A1
公开(公告)日：2003-11-20
申请号：US10441061
申请日：2003-05-20
申请人： Ushio Denki Kabushiki Kaisya
发明人： Kiyoshi Otake , Nobuyuki Hishinuma
IPC分类号： G03F007/16 , G03F007/40 , G03F007/20 , C25F001/00 , C25F003/30 , C25F005/00 , B08B006/00 , G03F007/30
CPC分类号： H01L21/6715 , G03F7/423 , H01L21/67115
摘要： A resist removal method and device therefor are provided that are excellent from the point of view of washing costs and environmental preservation and that also offer extremely high removal performance, and this method of resist removal using functional water according to the present invention includes the following steps: (1) a step of irradiating a substrate to which resist has been applied with vacuum ultraviolet light of wavelength 172null10 nm; (2) a step of substantially uniformly applying functional water to this resist surface; and (3) a step of irradiating ultraviolet light of wavelength 190 to 310 nm onto this functional water.
摘要翻译：提供了从洗涤成本和环境保护的观点出发，并且还具有极高的去除性能的抗蚀剂去除方法和装置，并且根据本发明的使用官能水的抗蚀剂去除方法包括以下步骤（1）使用波长172±10nm的真空紫外线照射已经涂布了抗蚀剂的基板的工序; （2）将功能性水均匀地施加到该抗蚀剂表面的工序; 和（3）将波长为190〜310nm的紫外线照射到该功能性水上的工序。

7. 发明申请

US20030098039A1 Device for deposition with chamber cleaner and method for cleaning the chamber 失效
标题翻译：用于清洁室的沉积装置和用于清洁室的方法
公开(公告)号：US20030098039A1
公开(公告)日：2003-05-29
申请号：US10241353
申请日：2002-09-11
发明人： Woo-Seock Cheong
IPC分类号： C25F001/00 , C25F003/30 , C25F005/00
CPC分类号： C23C16/4405 , B08B7/00 , B08B7/0035 , B08B7/0071 , C23C16/4407
摘要： A chamber cleaner includes a cleaner, which is sealed, a connector passing through a side of the cleaner, lamp assembly connected to the connector and uniformly arranged in an inside surface of the cleaner, a heat-source assembled in the lamp assembly and an exhausting unit having an entrance passing through a portion of the outside of the connector exposed to the cleaner, and an exit passing through a portion of the inside of the connector, which is extended to the outside of the exposed portion or a predetermined length.
摘要翻译：腔室清洁器包括清洁器，其被密封，穿过清洁器侧面的连接器，连接到连接器的灯组件并均匀地布置在清洁器的内表面中，组装在灯组件中的热源和排气具有穿过暴露于清洁器的连接器的外部的一部分的入口的单元和穿过连接器的内部的一部分的出口，其延伸到暴露部分的外部或预定长度。

8. 发明申请

US20030015218A1 Wafer cleaning 有权
标题翻译：晶圆清洗
公开(公告)号：US20030015218A1
公开(公告)日：2003-01-23
申请号：US10243486
申请日：2002-09-12
发明人： Mario E. Bran
IPC分类号： C25F001/00 , C25F003/30 , C25F005/00 , B08B006/00 , B08B003/00 , B08B003/12 , F26B003/34
CPC分类号： H01L21/02041 , B06B3/00 , B08B3/12 , H01L21/67051 , H01L21/67057 , Y10S134/902
摘要： Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe. In one arrangement, fluid is sprayed onto both sides of a wafer while a probe is positioned close to an upper side. In another arrangement, a short probe is positioned with its end face close to the surface of a wafer, and the probe is moved over the wafer as it rotates. The probe may also be positioned through a central hole in a plurality of discs to clean a group of such elements at one time.
摘要翻译：使用兆声波能量清洁半导体晶片以搅拌施加到晶片上的清洁流体。能量源振动将声能传递到流体中的细长探针。探头有一个坚实的清洁杆和一个喇叭形或阶梯式的后底座。在一种形式中，探针由一个部件制成，而另一种形式，杆安装在基座中的插座中。这使得杆可以由与清洁溶液相容的材料制成，而基座可以是不同的材料。声耦合到探针基座和换能器上的传热构件将热量从换能器传导出去。用于传热构件和换能器的壳体支撑这些部件并且提供用于通过壳体引导冷却剂以控制换能器的温度的装置。在另一种布置中，壳体的端部耦合在换能器和探头之间。在一种布置中，当探针位于靠近上侧时，将流体喷射到晶片的两侧。在另一种布置中，将短的探针定位成其端面靠近晶片的表面，并且探针在其旋转时在晶片上移动。探针也可以通过多个盘中的中心孔定位，以一次清洁一组这样的元件。

9. 发明申请

US20020139388A1 Methods for reducing contamination of semiconductor substrates 有权
标题翻译：减少半导体衬底污染的方法
公开(公告)号：US20020139388A1
公开(公告)日：2002-10-03
申请号：US09820690
申请日：2001-03-30
发明人： Robert Chebi , David Hemker
IPC分类号： C25F001/00 , C25F003/30 , C25F005/00 , B08B006/00 , B08B007/00
CPC分类号： H01L21/67115 , B08B7/0071 , H01L21/67028 , H01L21/67103 , H01L21/67109 , Y10S414/135 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S414/14 , Y10S438/904 , Y10S438/913
摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.
摘要翻译：提供了减少处理后的半导体衬底污染的方法。所述方法包括加热经处理的基底以通过热解吸从基底表面除去吸附的化学物质。热解吸可以原位或非原位进行。可以通过对流，传导和/或辐射加热来加热衬底。也可以通过用惰性等离子体处理处理的基板的表面来加热基板，在惰性等离子体中处理等离子体中的离子轰击衬底表面，提高其温度。也可以通过在将衬底从处理室传送过程中向衬底施加热能和/或通过将衬底传送到传输模块（例如，装载锁）或第二处理室来进行热解吸，加热。通过在衬底表面上吹扫惰性气体可以提高运输过程中的热解吸。

10. 发明申请

US20020028585A1 Method of removing contaminants from integrated circuit substrates using cleaning solutions 有权
标题翻译：使用清洁溶液从集成电路基板去除污染物的方法
公开(公告)号：US20020028585A1
公开(公告)日：2002-03-07
申请号：US09862525
申请日：2001-05-22
申请人： Samsung Electronics Co., Ltd.
发明人： Seung-Pil Chung , Kyu-Hwan Chang , Young-Min Kwon , Sang-Lock Hah
IPC分类号： H01L021/26 , C25F003/30 , C25F005/00
CPC分类号： H01L21/02063 , C11D3/3947 , C11D7/265 , C11D7/36 , C11D11/0047 , H01L21/02046 , Y10S134/902 , Y10S438/906
摘要： A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the substrate with hydrogen gas and fluorine-containing gas, and annealing the substrate. Cleaning solutions includes ammonium, hydrogen peroxide, deionized water, and chelating agent. The chelating agent includes one to three compounds selected from the group consisting of carboxylic acid compounds, phosphonic acid compounds, and hydroxyl aromatic compounds. The fluorine-containing gas is a gas selected from the group consisting of nitrogen trifluoride (NF3), hexafluorosulphur (SF6), and trifluorochlorine (ClF3).
摘要翻译：从集成电路基板除去污染物的方法包括用含有螯合剂的过氧化氢清洗液处理基板，用氢气和含氟气体处理基板，对基板进行退火。清洁溶液包括铵，过氧化氢，去离子水和螯合剂。螯合剂包括选自羧酸化合物，膦酸化合物和羟基芳族化合物的一种至三种化合物。含氟气体是选自三氟化氮（NF 3），六氟硫（SF 6）和三氟氯（ClF 3）的气体。

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