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1. 发明专利

AU2001281594B2 Fabrication of nanoelectronic circuits 未知
公开(公告)号：AU2001281594B2
公开(公告)日：2005-08-25
申请号：AU2001281594
申请日：2001-08-24
申请人： UNISEARCH LTD
发明人： CLARK ROBERT GRAHAM , BUEHLER TILO MARKUS , BRENNER ROLF , MCKINNON RITA PATRICIA , LUMPKIN NANCY ELLEN , HAMILTON ALEXANDER RUDOLF , DZURAK ANDREW STEVEN
IPC分类号： G03F7/26 , G03F7/20 , G06N99/00 , H01L21/027 , H01L21/266 , H01L21/335 , H01L21/336 , H01L29/66 , H01L29/78 , H01L49/00 , G03F007/20 , G01N001/00 , H01L021/3105 , H01L021/266
摘要： A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.

2. 发明专利

AU2001281594B9 Fabrication of nanoelectronic circuits 未知
公开(公告)号：AU2001281594B9
公开(公告)日：2005-09-01
申请号：AU2001281594
申请日：2001-08-24
申请人： NEWSOUTH INNOVATIONS PTY LTD
发明人： CLARK ROBERT GRAHAM , BUEHLER TILO MARKUS , BRENNER ROLF , MCKINNON RITA PATRICIA , LUMPKIN NANCY ELLEN , HAMILTON ALEXANDER RUDOLF , DZURAK ANDREW STEVEN
IPC分类号： G03F7/26 , G03F7/20 , G06N99/00 , H01L21/027 , H01L21/266 , H01L21/335 , H01L21/336 , H01L29/66 , H01L29/78 , H01L49/00 , G03F007/20 , G01N001/00 , H01L021/3105 , H01L021/266
摘要： A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.

3. 发明申请

US20040191702A1 Apparatus for photolithographic processing 失效
标题翻译：光刻处理设备
公开(公告)号：US20040191702A1
公开(公告)日：2004-09-30
申请号：US10816973
申请日：2004-04-01
发明人： Kevin Duesman , Randal Chance
IPC分类号： G03F007/20
CPC分类号： G03F7/70466
摘要： Photolithographic processing apparatus and methods are disclosed. In one embodiment, a method of photolithographically patterning a surface of a substrate includes forming a photoreactive layer on the surface of the substrate, transmitting light through a first patterning portion of a first photolithographic mask to expose a first patterned portion of the photoreactive layer, transmitting light through a second patterning portion of a second photolithographic mask to expose a second patterned portion of the photoreactive layer. In an alternate embodiment, transmitting light through the first patterning portion of the first photolithographic mask is performed simultaneously with transmitting light through the second patterning portion of the second photolithographic mask. In a further embodiment, the light being transmitted through the second patterning portion of a second photolithographic mask has already been transmitted through a first transparent portion of the first photolithographic mask.
摘要翻译：公开了光刻处理装置和方法。在一个实施例中，光刻地图案化衬底的表面的方法包括在衬底的表面上形成光反应层，透过第一光刻掩模的第一图案化部分透射光以暴露光反应层的第一图案化部分，透射光通过第二光刻掩模的第二图案化部分以暴露光致反应层的第二图案化部分。在替代实施例中，透射第一光刻掩模的第一图案化部分的光透过第二光刻掩模的第二图案形成部分同时进行。在另一个实施例中，透射通过第二光刻掩模的第二图案化部分的光已经透射通过第一光刻掩模的第一透明部分。

4. 发明申请

US20040184014A1 Contamination barrier with expandable lamellas 有权
标题翻译：可扩展薄片的污染屏障
公开(公告)号：US20040184014A1
公开(公告)日：2004-09-23
申请号：US10743265
申请日：2003-12-23
申请人： ASML NETHERLANDS B.V.
发明人： Levinus Pieter Bakker , Marcel Mathijs Theodore Marie Dierichs , Johannes Maria Freriks , Frank Jeroen Pieter Schuurmans , Jakob Vijfvinkel , Wilhelmus Josephus Box
IPC分类号： G03F007/20 , G03B027/52
CPC分类号： B82Y10/00 , G03F7/70166 , G03F7/70916
摘要： A contamination barrier that passes through radiation from a radiation source and captures debris coming from the radiation source is disclosed. The contamination barrier includes an inner ring, an outer ring, and a plurality of lamellas. The lamellas extend in a radial direction from a main axis, and each of the lamellas is positioned in a respective plane that include the main axis. At least one outer end of each of the lamellas is slidably connected to at least one of the inner and outer ring.
摘要翻译：公开了一种通过来自辐射源的辐射并捕获来自辐射源的碎片的污染屏障。污染屏障包括内环，外环和多个薄片。薄片从主轴沿径向方向延伸，并且每个薄片位于包括主轴线的相应平面中。每个薄片的至少一个外端可滑动地连接到内圈和外圈中的至少一个。

5. 发明申请

US20040183030A1 Method and apparatus for recycling gases used in a lithography tool 有权
标题翻译：用于回收光刻工具中使用的气体的方法和装置
公开(公告)号：US20040183030A1
公开(公告)日：2004-09-23
申请号：US10392793
申请日：2003-03-20
申请人： ASML Netherlands B.V.
发明人： Stephen Roux
IPC分类号： G03F007/20
CPC分类号： G03F7/70933 , B82Y10/00 , G03F7/70033 , G03F7/70841 , G03F7/70883
摘要： A system and method are used to recycle gases in a lithography tool. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. The first and second gases converge between the two chambers, and at least one of the gases is pumped to a storage device. From the storage device, at least one of the two gases is recycled either within the system or remote from the system and possibly reused within the system. A gaslock can couple the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first, second, and/or third gas can be pumped to the storage device and routed to the recycling device. The first, second, and/or third gas can be recycled for reuse to form the emitting light.
摘要翻译：系统和方法用于回收光刻工具中的气体。第一室包括基于第一气体发光的元件。第二室使用发射的光进行处理并且包括第二气体。第一和第二气体在两个室之间会聚，并且至少一个气体被泵送到存储装置。从存储装置中，两种气体中的至少一种在系统内或远离系统再循环，并且可能在系统内重新使用。气闸可以将第一腔室连接到第二腔室。气体源在气闸中的第一和第二气体之间提供第三气体，使得第一气体与气闸中的第二气体隔离。第一，第二和/或第三气体可以被泵送到存储装置并且被路由到回收装置。第一，第二和/或第三气体可以被再循环以重新使用以形成发射光。

6. 发明申请

US20040175650A1 Photosensitive composition for manufacturing optical waveguide, production method thereof and polymer optical waveguide pattern formation method using the same 审中-公开
公开(公告)号：US20040175650A1
公开(公告)日：2004-09-09
申请号：US10803393
申请日：2004-03-18
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Seiji Toyoda , Saburo Imamura , Satoru Tomaru , Takashi Kurihara , Koji Enbutsu , Shoichi Hayashida , Tohru Maruno
IPC分类号： G03C001/73 , G03F007/075 , G03F007/20 , G03F007/36
CPC分类号： G03F7/0757 , G03F7/038 , Y10S430/106 , Y10S430/115 , Y10S430/117
摘要： A photosensitive composition for optical waveguides comprising of an organic oligomer, a polymerization initiator and a crosslinking agent, the organic oligomer being a silicone oligomer represented by the following formula (1), wherein X denotes hydrogen, deuterium, halogen, an alkyl group or an alkoxy group; m is an integer from 1 to 5; x and y represent the proportion of respective units, and neither x nor y is 0; and R1 denotes a methyl, ethyl, or isopropyl group; a production method thereof, and a polymer optical waveguide pattern formation method using the same. 1

7. 发明申请

US20040137373A1 Method for forming multiple spacer widths 失效
标题翻译：形成多个间隔物宽度的方法
公开(公告)号：US20040137373A1
公开(公告)日：2004-07-15
申请号：US10340245
申请日：2003-01-09
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ming-Ta Lei , Yih-Shung Lin , Al-Sen Liu , Cheng-Chung Lin , Baw-Ching Perng , Chia-Hui Lin
IPC分类号： G03F007/20
CPC分类号： H01L21/823468
摘要： A method of forming pluralities of gate sidewall spacers each plurality comprising different associated gate sidewall spacer widths including providing a plurality of gate structures formed overlying a substrate and a plurality of dielectric layers formed substantially conformally overlying the gate structures; exposing a first selected portion of the plurality followed by anisotropically etching through a thickness portion comprising at least the uppermost dielectric layer to form a first sidewall spacer width; exposing a first subsequent selected portion of the plurality followed by etching through at least a thickness portion of the uppermost dielectric layer; and, exposing a second subsequent selected portion of the plurality followed by anisotropically etching through at least a thickness portion of the uppermost dielectric layer to form a subsequent sidewall spacer width.
摘要翻译：一种形成多个栅极侧壁间隔物的方法，每个栅极侧壁间隔件包括不同的相关栅极侧壁间隔物宽度，包括提供形成在衬底上的多个栅极结构和基本上共形地覆盖栅极结构的多个电介质层; 暴露多个的第一选定部分，然后通过各向异性蚀刻穿过包括至少最上面的介电层的厚度部分以形成第一侧壁间隔物宽度; 暴露多个的第一后续选定部分，然后蚀刻通过至少最上层介电层的厚度部分; 并且暴露多个随后的第二部分，然后通过各向异性蚀刻穿过至少最上面的介电层的厚度部分以形成随后的侧壁间隔物宽度。

8. 发明申请

US20040094724A1 Lithographic projection apparatus and reflector assembly for use therein 有权
标题翻译：平版印刷设备和用于其中的反射器组件
公开(公告)号：US20040094724A1
公开(公告)日：2004-05-20
申请号：US10647120
申请日：2003-08-25
申请人： ASML NETHERLANDS B.V.
发明人： Frank Jeroen Pieter Schuurmans , Levinus Pieter Bakker
IPC分类号： G03F007/20
CPC分类号： B82Y10/00 , G03F7/70166 , G03F7/70958
摘要： A lithographic projection apparatus includes a grazing incidence collector. The grazing incidence collector is made up of several reflectors. In order to reduce the amount of heat on the collector, the reflectors are coated. The reflector at the exterior of the collector has an infrared radiating layer on the outside. The inner reflectors are coated with an EUV reflective layer on the outside.
摘要翻译：光刻投影装置包括掠入射收集器。放射入射收集器由多个反射器组成。为了减少收集器上的热量，反射器被涂覆。收集器外部的反射器在外部具有红外辐射层。内部反射器在外部涂有EUV反射层。

9. 发明申请

US20040060731A1 Patterned electrically conductive polymers 审中-公开
标题翻译：图案化的导电聚合物
公开(公告)号：US20040060731A1
公开(公告)日：2004-04-01
申请号：US10631223
申请日：2003-07-28
发明人： Woohong Kim , Zakya Kafafi
IPC分类号： H05K001/00 , H05K001/09 , G03F007/20 , G03F007/40 , G03F007/30
CPC分类号： G03F7/0007 , G02F1/13439 , G03F7/039 , H01L21/288 , H01L27/3281 , H01L51/0018 , H01L51/0021 , H01L51/0035 , H01L51/0037 , H01L51/0512 , H01L51/0579 , H01L51/5206 , H05K3/02 , H05K2201/0329
摘要： A method of patterning electrically conductive polymers is: forming a surface of a conducting polymer on a substrate, applying a mask to this surface, applying irradiation to form regions of exposed conducting polymer and regions of unexposed conducting polymer, removing the mask, and gently removing by non-chemically reactive means the regions of exposed conducting polymer.
摘要翻译：图案化导电聚合物的方法是：在基材上形成导电聚合物的表面，在该表面上施加掩模，施加照射以形成暴露的导电聚合物的区域和未曝光的导电聚合物的区域，除去掩模，并轻轻地去除通过非化学反应性表示暴露的导电聚合物的区域。

10. 发明申请

US20040058280A1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20040058280A1
公开(公告)日：2004-03-25
申请号：US10430112
申请日：2003-05-05
申请人： Samsung Electronics Co., Ltd.
发明人： Bong-Cheol Kim , Dae-Youp Lee
IPC分类号： G03F007/16 , G03F007/20 , G03F007/30 , G03F007/40
CPC分类号： H01L21/76808
摘要： Disclosed is a method for manufacturing a semiconductor device by employing a dual damascene process. After a first insulation film including a conductive pattern is formed on a substrate, at least one etch stop film and at least one insulation film are alternatively formed on the first insulation film. A via hole for a contact or a trench for a metal wiring is formed through the insulation film, and then the via hole or the trench is filled with a filling film including a water-soluble polymer. After a photoresist film is coated on the filling film, the photoresist film is patterned to form a photoresist pattern and to remove the filling film. The DOF and processing margin of the photolithography process for forming the photoresist pattern can be improved because the photoresist film can have greatly reduced thickness due to the filling film.
摘要翻译：公开了采用双镶嵌工艺制造半导体器件的方法。在基板上形成包括导电图案的第一绝缘膜之后，在第一绝缘膜上交替地形成至少一个蚀刻停止膜和至少一个绝缘膜。通过绝缘膜形成接触用通孔或金属配线用沟槽，然后在通孔或沟槽中填充有包含水溶性聚合物的填充膜。将光致抗蚀剂膜涂覆在填充膜上之后，将光致抗蚀剂膜图案化以形成光致抗蚀剂图案并除去填充膜。由于光致抗蚀剂膜由于填充膜而可以大大减小厚度，所以可以提高用于形成光致抗蚀剂图案的光刻工艺的DOF和处理余量。

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