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1. 发明申请

US20020070126A1 Polishing method, polishing apparatus, plating method, and plating apparatus 失效
标题翻译：抛光方法，抛光装置，电镀方法和电镀装置
公开(公告)号：US20020070126A1
公开(公告)日：2002-06-13
申请号：US09955668
申请日：2001-09-19
发明人： Shuzo Sato , Yuji Segawa , Akira Yoshio , Takeshi Nogami
IPC分类号： B23H003/00 , C25F003/00 , H05K003/07 , B23H005/00 , C25F007/00 , B23H007/00 , B23H009/00 , B23H011/00 , H01L021/00
CPC分类号： C25D5/02 , B24B37/042 , C25D5/04 , C25D7/123 , C25D17/001 , C25D21/12 , C25F3/16 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/7684 , H01L21/76888
摘要： A polishing method and polishing apparatus able to easily flatten an initial unevenness with an excellent efficiency of removal of excess copper film and suppress damage to a lower interlayer insulation film, and a plating method and plating apparatus able to deposit a flat copper film. The polishing method comprises the steps of measuring thickness equivalent data of a film on a wafer, making a cathode member smaller than the surface face a region thereof, interposing an electrolytic solution between the surface and the cathode member, applying a voltage using the cathode member as a cathode and the film an anode, performing electrolytic polishing by electrolytic elution or anodic oxidation and chelation and removal of a chelate film in the same region preferentially from projecting portions of the film until removing the target amount of film obtained from the thickness equivalent data, and repeating steps of moving the cathode member to another region to flattening the regions over the entire surface. Further, plating is performed by a reverse reaction of the above.
摘要翻译：一种抛光方法和抛光装置，其能够以极好的去除多余的铜膜的效率并且抑制对下层间绝缘膜的损坏而容易地平坦化初始凹凸，以及能够沉积扁平铜膜的电镀方法和电镀装置。抛光方法包括以下步骤：测量晶片上的膜的厚度当量数据，使阴极部件小于表面面积的阴极部件，在电极表面和阴极部件之间插入电解液，使用阴极部件施加电压作为阴极，膜是阳极，通过电解洗脱或阳极氧化进行电解抛光，并优先从膜的突出部分螯合并除去相同区域中的螯合膜，直到从厚度等效数据中除去目标量的膜并且重复将阴极部件移动到另一区域以使整个表面上的区域变平的步骤。此外，通过上述的反作用进行电镀。

2. 发明申请

US20040195110A1 METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE 有权
标题翻译：工业电化学平面化方法与装置
公开(公告)号：US20040195110A1
公开(公告)日：2004-10-07
申请号：US10709598
申请日：2004-05-17
申请人： SPEEDFAM-IPEC CORPORATION
发明人： Ismail Emesh , Saket Chadda , Nikolay N. Korovin , Brian L. Mueller
IPC分类号： B23H005/00
CPC分类号： B24B37/20 , B23H5/08 , B24B37/12 , C25F3/02 , C25F7/00 , H01L21/32125 , H01L21/7684
摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.
摘要翻译：用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫和压板。压板由导电材料形成，靠近抛光垫设置并且被配置为在平坦化处理的至少一部分期间具有负电荷。至少一个电导体位于压板内。电导体具有连接到电源的第一端。工件载体构造成承载工件并将工件压靠在抛光垫上。电源通过电导体向工件施加正电荷，使得产生工件的金属化表面和压板之间的电位差以从工件移除金属化表面的至少一部分。

3. 发明申请

US20040182715A1 Process and apparatus for air bubble removal during electrochemical processing 审中-公开
标题翻译：电化学处理过程中气泡去除的工艺和设备
公开(公告)号：US20040182715A1
公开(公告)日：2004-09-23
申请号：US10692953
申请日：2003-10-24
发明人： Jeffrey Bogart , Hung-Ming Wang , Serkan Erdemli , Serdar Aksu , Erol C. Basol , Manuel R. Cornejo , Bulent M. Basol
IPC分类号： C25D005/08 , B23H005/00 , B23H003/00 , C25D011/04
CPC分类号： C25F7/00 , B23H5/08 , C25D5/003 , C25D5/08 , C25D7/123 , C25D17/001 , C25D21/04 , C25D21/10 , C25F3/00
摘要： A method for removing gas bubbles from a surface of a wafer is provided. Removal process is performed as the wafer surface is placed into a process solution for an electrochemical process. As the wafer surface is placed into the solution and moved towards a pressure barrier placed into the solution, a process solution flow between the wafer surface and the pressure barrier is induced to remove gas bubbles from the wafer surface. The pressure barrier includes openings which allow process solution to flow through the pressure barrier
摘要翻译：提供了从晶片表面去除气泡的方法。当将晶片表面放置在用于电化学过程的处理溶液中时，执行去除过程。当晶片表面被放置在溶液中并朝向放置在溶液中的压力屏障移动时，引起晶片表面和压力屏障之间的工艺溶液流从晶片表面去除气泡。压力屏障包括允许工艺溶液流过压力屏障的开口

4. 发明申请

US20030010651A1 Electrochemical machining method with optimal machining pulse duration 有权
标题翻译：具有最佳加工脉冲持续时间的电化学加工方法
公开(公告)号：US20030010651A1
公开(公告)日：2003-01-16
申请号：US10140505
申请日：2002-05-07
发明人： Alexandr Zaitsev , Sergey Bezroukov , Igor Leonidovich Agafonov , Aleksandr Leonidovich Belogorsky , Maxim Smirnov , Vladimir Zhitnikov
IPC分类号： B23H011/00 , C25D017/00 , B23H003/02 , C25C003/16 , C25C003/20 , C25F007/00 , B23H007/04 , B23H007/14 , C25B009/00 , C25B009/04 , C25B015/00 , C25D021/12 , B23H003/00 , C25F003/00 , H05K003/07 , B23H005/00 , B23H007/00 , B23H009/00 , H01L021/00
CPC分类号： B23H3/02 , B23H2300/10
摘要： For an electromechanical machining of a work piece there is an optimal pulse duration for the machining pulses corresponding to the maximum copying accuracy. Such an optimal pulse duration corresponds to a certain value of the gap. By alternating the machining pulses with measurement pulses it is possible to obtain an accurate information about the gap dimensions on-line during the electrochemical machining process. The process control means (20) are used to automate the electromechanical machining, while keeping it in the optimal mode. For this purpose the process control means (20) comprise the pulse control unit (26) to establish the pulse duration of the voltage pulses to be applied across the gap (4).
摘要翻译：对于工件的机电加工，对于与最大复印精度相对应的加工脉冲，存在最佳脉冲持续时间。这样的最佳脉冲持续时间对应于间隙的一定值。通过用测量脉冲交替加工脉冲，可以在电化学加工过程中获得关于在线的间隙尺寸的准确信息。过程控制装置（20）用于使机电加工自动化，同时保持其处于最佳模式。为此，过程控制装置（20）包括脉冲控制单元（26），以建立跨越间隙（4）施加的电压脉冲的脉冲持续时间。

5. 发明申请

US20030006146A1 Method for machining micro grooves of dynamic pressure pneumatic bearing 审中-公开
标题翻译：动压气动轴承微槽加工方法
公开(公告)号：US20030006146A1
公开(公告)日：2003-01-09
申请号：US10046503
申请日：2002-01-14
发明人： Eun-Sang Lee , Jeong-Woo Park , Chan-Hee Won
IPC分类号： B23H011/00 , B23H003/00 , B23H005/00 , C25F007/00 , B23H007/00 , B23H009/00 , C25F003/00 , H01L021/00 , H05K003/07
CPC分类号： F16C33/107 , B23H9/00 , B23H2200/10 , F16C33/14 , F16C2220/68 , F16C2223/06
摘要： A method for forming and polishing micro grooves in a dynamic pressure pneumatic bearing at a short time by employing the electrolytic polishing process and the micro electrolytic machining process is disclosed. The method comprises the step of forming a plurality of micro grooves in a surface of the bearing using an electrochemical electrolytic polishing process and, an electrolytic machining process.
摘要翻译：公开了一种通过采用电解抛光工艺和微电解加工工艺在短时间内在动压气动轴承中形成和抛光微槽的方法。该方法包括使用电化学电解抛光工艺和电解加工工艺在轴承的表面中形成多个微槽的步骤。

6. 发明申请

US20020153246A1 Method and apparatus for electropolishing metal interconnections on semiconductor devices 失效
标题翻译：用于电解抛光半导体器件上的金属互连的方法和装置
公开(公告)号：US20020153246A1
公开(公告)日：2002-10-24
申请号：US10120570
申请日：2002-04-10
发明人： Hui Wang
IPC分类号： C25C007/00 , C25F007/00 , C25B009/00 , C25D017/04 , C25D017/06 , C25D017/16 , C25F003/00 , B23H005/00 , B23H007/00 , B23H007/26 , B23H009/00 , B23H003/00 , B23H011/00 , H01L021/00 , H05K003/07
CPC分类号： H01L21/32115 , C25F3/22 , C25F7/00 , H01L21/32134 , H01L21/7684
摘要： An apparatus for electropolishing a wafer includes a wafer chuck and a stationary jet. The wafer chuck is configured to rotate and translate the wafer. The stationary jet is configured to apply an electrolyte to the wafer when the wafer is translated and rotated by the wafer chuck.
摘要翻译：用于电抛光晶片的装置包括晶片卡盘和静止射流。晶片卡盘配置成旋转和平移晶片。固定喷射器构造成当晶片被晶片卡盘平移和旋转时，将电解质施加到晶片。

7. 发明申请

US20040140226A1 Critical orifice gap setting for ECM grooving of flat plates 审中-公开
标题翻译： ECM平槽切槽的临界孔隙设计
公开(公告)号：US20040140226A1
公开(公告)日：2004-07-22
申请号：US10609895
申请日：2003-06-30
发明人： Dustin Alan Cochran
IPC分类号： B23H005/00
CPC分类号： B23H3/00 , B23H7/32 , B23H9/00 , B23H2200/10
摘要： An apparatus and method for electrochemically etching grooves in a working surface. A frame holds a working surface about an axis and facing a movable electrode movable along the axis. The electrode is axially movable and has a surface carrying a groove pattern to fix on the working surface. A source of electrolyte is pumped at a fixed static pressure rate between the surface of the movable electrode and the working surface. A support fixture is provided for supporting the electrode for movement toward and away from the working surface with minimal frictional restriction. A force biases the electrode surface toward the working surface so that a gap through which the electrolyte flows between the surface of the movable electrode and the working surface is determined primarily by the static flow rate of the electrolyte and the force bias of the electrode toward the working surface.
摘要翻译：一种用于电化学蚀刻工作表面中的槽的装置和方法。框架围绕轴线保持工作表面并面向可沿轴线移动的可动电极。电极是可轴向移动的并且具有承载凹槽图案以固定在工作表面上的表面。在可动电极的表面和工作表面之间以固定的静压力泵送电解质源。提供了一种支撑固定装置，用于以最小的摩擦限制来支撑电极以朝向和远离工作表面移动。力将电极表面偏压到工作表面，使得电解质在可动电极的表面和工作表面之间流动的间隙主要由电解液的静态流量和电极朝向工作面

8. 发明申请

US20040140223A1 System and method for radially positioning a workpiece for electrochemical machining 失效
标题翻译：用于电化学加工的工件的径向定位的系统和方法
公开(公告)号：US20040140223A1
公开(公告)日：2004-07-22
申请号：US10692240
申请日：2003-10-22
发明人： Dustin A. Cochran
IPC分类号： B23H005/00
CPC分类号： B23H11/003 , B23H7/26 , B23Q1/0063 , B23Q1/287
摘要： A system and method are described for radially positioning a workpiece for electrochemical machining. In one embodiment, a pressurized air chamber is configured to contain pressurized air. In addition, an expandable diaphragm is configured to position the workpiece radially relative to an electrode assembly in response to the pressurized air being released into the pressurized air chamber.
摘要翻译：对用于电化学加工的工件进行径向定位的系统和方法进行了描述。在一个实施例中，加压空气室构造成容纳加压空气。此外，可膨胀膜片构造成响应于被释放到加压空气室中的加压空气而相对于电极组件径向定位工件。

9. 发明申请

US20030205483A1 Method for fabricating trench capacitors for large scale integrated semiconductor memories 失效
标题翻译：用于制造用于大规模集成半导体存储器的沟槽电容器的方法
公开(公告)号：US20030205483A1
公开(公告)日：2003-11-06
申请号：US10436427
申请日：2003-05-12
发明人： Albert Birner , Dirk Schumann , Matthias Goldbach
IPC分类号： B23H005/00
CPC分类号： H01L21/3063 , C25F3/12 , H01L27/10861 , H01L28/40
摘要： The invention is an electrochemical method for producing trenches for trench capacitors in p-doped silicon with a very high diameter/depth aspect ratio for large scale integrated semiconductor memories. Trenches (macropores) having a diameter of less than about 100 nm and a depth of more than 10 nullm can be produced on p-doped silicon having a very low resistivity at a high etching rate, and thus, trench capacitors can be fabricated in a cost-effective manner.
摘要翻译：本发明是一种电化学方法，用于制造用于大规模集成半导体存储器的具有非常高的直径/深度纵横比的p掺杂硅中的沟槽电容器的沟槽。可以以高蚀刻速率在具有非常低的电阻率的p掺杂的硅上产生具有小于约100nm的直径和大于10um的深度的沟槽（大孔），因此可以制造沟槽电容器具有成本效益的方式。

10. 发明申请

US20030057106A1 High throughput chemical analysis by improved desorption/ionization on silicon mass spectrometry 审中-公开
标题翻译：通过硅质量分析改进的解吸/电离进行高通量化学分析
公开(公告)号：US20030057106A1
公开(公告)日：2003-03-27
申请号：US10242018
申请日：2002-09-12
发明人： Zhouxin Shen , Gary Siuzdak
IPC分类号： B23H003/00 , C25F003/00 , H05K003/07 , B23H005/00
CPC分类号： H01J49/0418 , C25F3/12 , G01N1/22 , Y10T436/25375 , Y10T436/255
摘要： A method of making improved substrates for desorbing and ionizing analytes takes an n-type semiconductor substrate and provides a strong light source. By focusing the illumination from the light source onto the n-type semiconductor substrate results in at least one lit region on the n-type semiconductor substrate. The substrate is electrochemically etched with a low current during illumination to form at least one sample reservoir, each sample reservoir being formed at a respective lit region on the n-type semiconductor substrate.
摘要翻译：制造用于解吸和电离分析物的改进的基板的方法取得n型半导体衬底并提供强光源。通过将来自光源的照明聚焦到n型半导体衬底上，导致n型半导体衬底上的至少一个点亮区域。衬底在照明期间用低电流电化学蚀刻以形成至少一个样品储存器，每个样品储存器形成在n型半导体衬底上的相应的点亮区域。

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