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    • 2. 发明申请
    • Method and apparatus for optical endpoint calibration in CMP
    • CMP中光学端点校准的方法和装置
    • US20030020909A1
    • 2003-01-30
    • US09829493
    • 2001-04-09
    • SpeedFam-IPEC Corporation
    • John A. AdamsRobert A. EatonCharles Chen
    • G01N021/00
    • G01J3/28G01J2003/2866G01N21/274
    • The invention provides calibrated spectrometers in a multi-spectrometer system, where chemical mechanical polishing endpoint detection is an issue. In one aspect of the invention, a spectrometer is calibrated by selecting a filter slide having a predetermined light transmittance or reflectance variation with location (e.g. angular or linear displacement) on the slide. Light is incident on locations on the filter slide, and this incident light is either transmitted or reflected. Transmitted or reflected light is received by a spectrometer, and the wavelength measured is compared with the known wavelength that corresponds to its location on the slide. The spectrometer is calibrated by normalizing the wavelength readings obtained at various locations on the slide with the known readings dictated by the reference slide. The spectrometers are also calibrated to a standard light source for intensity of light. During polishing of workpieces, each spectrometer monitors surface spectral data, and converts these via its unique normalization factors to normalized values that are then compared with the normalized stored spectral data from the test piece. Once measured data (after normalization) approaches the endpoint set for the test piece within a predetermined degree of difference the endpoint of CMP has been reached and polishing may be manually or automatically terminated.
    • 本发明在多光谱仪系统中提供校准的光谱仪,其中化学机械抛光终点检测是一个问题。 在本发明的一个方面中,通过选择具有预定光透射率或反射率变化与滤光片上的位置(例如角度或线性位移)的滤光片来校准光谱仪。 光线入射到过滤器滑块上的位置,并且该入射光被传送或反射。 通过光谱仪接收发射或反射的光,将测量的波长与对应于其在载玻片上的位置的已知波长进行比较。 通过用参考幻灯片指定的已知读数对滑块上各个位置处获得的波长读数进行归一化来校准光谱仪。 光谱仪也被校准为光强度的标准光源。 在抛光工件期间,每个光谱仪监测表面光谱数据,并通过其独特的归一化因子将其转换成归一化值,然后将其与来自测试片的归一化存储的光谱数据进行比较。 一旦测量数据(归一化后)在预定差异度内接近测试件的端点设置,则CMP的终点已经达到,抛光可以手动或自动终止。
    • 5. 发明申请
    • Work piece wand and method for processing work pieces using a work piece handling wand
    • 工件棒和使用工件处理棒加工工件的方法
    • US20020067985A1
    • 2002-06-06
    • US09948836
    • 2001-09-07
    • SpeedFam-IPEC Corporation
    • Daniel S. MalleryDoug KreagerChris E. Barns
    • B65H001/00
    • H01L21/68707G11B23/00
    • A wafer handling wand allows the efficient loading and unloading of semiconductor wafers to and from a CMP apparatus. The wand includes identical work piece gripping, alignment, and loading/unloading mechanisms on the top and bottom sides. A processed wafer can be unloaded from the apparatus onto one side of the wand and an unprocessed wafer can be loaded into the apparatus from the second side. The gripping mechanism includes a support area and a spaced apart moveable gripping finger. Wafer loading is facilitated by a cam attached to the support area that rotates when the cam contacts the apparatus. Upon rotation, the cam provides a surface for directing the work piece into the apparatus. The surface of the cam also includes an alignment aid that can be brought into contact with a reference surface on the apparatus to insure proper alignment between the wand and the apparatus.
    • 晶片处理棒允许将半导体晶片有效地装载和从CMP装置卸载。 魔杖包括顶部和底部上相同的工件夹紧,对准和装载/卸载机构。 经处理的晶片可以从设备卸载到棒的一侧,并且未处理的晶片可以从第二侧装载到设备中。 夹持机构包括支撑区域和间隔开的可移动夹持指状物。 通过安装在凸轮接触设备时旋转的支撑区域的凸轮来促进晶片加载。 在旋转时,凸轮提供用于将工件引导到设备中的表面。 凸轮的表面还包括可与装置上的参考表面接触的对准辅助件,以确保魔杖和装置之间的适当对准。
    • 6. 发明申请
    • Method and apparatus for removing a material layer from a substrate
    • US20020023719A1
    • 2002-02-28
    • US09943487
    • 2001-08-30
    • SpeedFam-IPEC Corporation
    • Yakov EpshteynSumit GuhaYehiel GotkisWilliam J. Bellamak
    • H01L021/302
    • H01L21/02024B24B37/013B24B37/20B24B37/26
    • An improvement to chemical-mechanical polishing. The improvement includes using a buffing pad having a geometrically optimized shape along with optimizing the buff head diameter, offset O and overlay L. In one embodiment, the buffing pad is smaller than the buff head and is mounted eccentrically. In another embodiment, the buffing pad has a generally square outer shape. In another embodiment, the buff pad is circular and is the same size as the circular buff head. In another embodiment, the buffing pad has at least three radially extending arms. The optimal configuration is determined iteratively for a selected process by changing the buffing pad shape, buff head diameter, the offset and the overlay. For example, increasing the offset generally tends to increase the removal rate toward the edge of the wafer. Increasing the overlap generally tends to increase the removal rate toward the center of the wafer. Removing portions of the buffing pad near the pad's edge tends to decrease the removal rate over the entire wafer radius but more so near the center and the edge of the wafer. By empirically testing various configurations, the optimal configuration can be found for a particular application. The invention further provides a method of chemical-mechanical polishing of a semiconductor device utilizing a combination of polishing steps, including a first polishing step on a primary polish station using a first slurry and a second polishing step on a buff station using a second slurry. The method may be used on a material layer, such as copper or tungsten, deposited over a barrier layer covering a dielectric layer. The first polishing step is stopped after the material layer has been substantially removed and the second polishing step is stopped after the barrier layer has been substantially removed. An end-point detection system may be used to determine when the material and barrier layers have been substantially removed.