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1. 发明授权

US08652862B2 Method for etching insulating film and method for manufacturing semiconductor optical device 有权
标题翻译：绝缘膜的蚀刻方法及半导体光学元件的制造方法
公开(公告)号：US08652862B2
公开(公告)日：2014-02-18
申请号：US13223586
申请日：2011-09-01
申请人： Yukihiro Tsuji
发明人： Yukihiro Tsuji
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , H01S5/2086 , H01S5/2222 , H01S5/2275
摘要： A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF4 gas and oxygen gas until the projections of the first resin layer are exposed, a Si component of the second resin layer being oxidized in etching the second resin layer; selectively etching the first resin layer until the insulating film is exposed using as a mask the second resin layer buried in the recesses of the first resin layer to form a resin layer mask; and etching the insulating film using the resin layer mask. Further, in the step of etching the second resin layer, the reactive ion etching is performed under applying a self-bias voltage so that a Si product is removed, the Si product being provided from the Si component remaining in the second resin layer without being oxidized.
摘要翻译：蚀刻绝缘膜的方法包括形成绝缘膜的步骤; 在绝缘膜上形成由非含硅树脂构成的第一树脂层; 在第一树脂层中形成包括凸起和凹陷的图案; 形成由含硅树脂构成的第二树脂层，以覆盖第一树脂层中的图案的突起和凹部; 用包含CF 4气体和氧气的蚀刻气体进行反应离子蚀刻来蚀刻第二树脂层，直到第一树脂层的突起露出，第二树脂层的Si成分在蚀刻第二树脂层时被氧化; 选择性地蚀刻第一树脂层直到绝缘膜作为掩模曝露在第一树脂层的凹陷中的第二树脂层以形成树脂层掩模; 并使用树脂层掩模蚀刻绝缘膜。此外，在蚀刻第二树脂层的步骤中，在施加自偏压下进行反应离子蚀刻，从而除去Si产物，Si产物由残留在第二树脂层中的Si成分提供而不是氧化

2. 发明授权

US07695290B2 Board connector 失效
标题翻译：板连接器
公开(公告)号：US07695290B2
公开(公告)日：2010-04-13
申请号：US11887790
申请日：2006-04-21
申请人： Hiroshi Nakano , Masahide Hio , Kenji Okamura , Hiroki Hirai , Hiroomi Hiramitsu , Osamu Hirabayashi
发明人： Hiroshi Nakano , Masahide Hio , Kenji Okamura , Hiroki Hirai , Hiroomi Hiramitsu , Osamu Hirabayashi
IPC分类号： H01R12/00
CPC分类号： H01R12/707 , H01R12/712 , H01R43/0256
摘要： A board connector (1) has a housing (10) and terminal fittings (20) penetrate through the back wall (11) of the housing (10). A board connecting portion (21) of each terminal fitting (20) penetrates through the back wall (11) and is solder-connected to a board (2). The housing (10) has a heat transfer inhibiting portion for inhibiting heat transfer to the back wall (11). The heat transfer inhibiting portion has a through-hole (13) or heat-insulating grooves (17) in the back wall (11). As a result, heat transfer to the back wall (11) is inhibited and deformation of the back wall (11) due to thermal expansion also is inhibited. Consequently, it is possible to prevent the terminal fittings (20) from separating from the board (2) and going into a state of being not solder-connected thereto.
摘要翻译：板连接器（1）具有壳体（10），并且端子接头（20）穿过壳体（10）的后壁（11）。每个端子接头（20）的板连接部分（21）穿过后壁（11）并焊接到板（2）上。壳体（10）具有用于抑制向后壁（11）传热的传热阻止部。传热抑制部分在后壁（11）中具有通孔（13）或绝热槽（17）。结果，抑制了向后壁（11）的热传递，并且抑制了由于热膨胀导致的后壁（11）的变形。因此，可以防止端子配件（20）与板（2）分离并进入不与其焊接连接的状态。

3. 发明授权

US07426224B2 Optical transmitter with a digitally controlled bias and modulation currents for a laser diode 有权
标题翻译：具有激光二极管数字控制偏置和调制电流的光发射机
公开(公告)号：US07426224B2
公开(公告)日：2008-09-16
申请号：US11790073
申请日：2007-04-23
申请人： Hiroto Ishibashi
发明人： Hiroto Ishibashi
IPC分类号： H01S3/13 , H01S3/00
CPC分类号： H01S5/06832 , H01S5/0427 , H01S5/0617
摘要： The present invention is to provide an optical transmitter that installs a laser diode and a circuit to control currents supplied to the laser diode, and reduces the size of the control circuit. The transmitter includes an LD, an LD-Driver, a monitor PD, and a control unit that outputs two data for the bias and modulation currents to the driver based on the photocurrent. The control unit provides a memory whose addresses correspond to the bias current, while a data for the modulation current is set within an address of the memory. Accordingly, the control unit adjusts the bias current so as to maintain the photocurrent constant and outputs the data for the modulation current to the driver by reading information stored in the address corresponding to the bias current.
摘要翻译：本发明提供一种光发射机，其安装激光二极管和电路来控制提供给激光二极管的电流，并减小控制电路的尺寸。发射器包括LD，LD驱动器，监视器PD和控制单元，其基于光电流向驾驶员输出偏置和调制电流的两个数据。控制单元提供其地址对应于偏置电流的存储器，而调制电流的数据被设置在存储器的地址内。因此，控制单元调节偏置电流以保持光电流恒定，并通过读取存储在与偏置电流相对应的地址中的信息将调制电流的数据输出到驱动器。

4. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

5. 发明申请

US20160156165A1 PROTECTOR AND WIRING HARNESS WITH PROTECTOR 审中-公开
标题翻译：保护器和配线保护器
公开(公告)号：US20160156165A1
公开(公告)日：2016-06-02
申请号：US14900333
申请日：2014-06-11
申请人： AUTONETWORKS TECHNOLOGIES, LTD. , SUMITOMO WIRING SYSTEMS, LTD. , SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Shigeto KATOU , Atsushi MURATA
IPC分类号： H02G3/00 , H01B7/00
CPC分类号： H02G3/26 , B60R16/0215 , H01B7/0045 , H02G3/0487
摘要： It is aimed to provide a technology capable of partially easily bending and deforming a wiring harness accommodated in a protector without introducing a hot-pressing machine for forming a shape capable of accommodating a wiring harness at a manufacturing side for wiring harnesses. To achieve this object, a protector includes an accommodating portion formed of a sheet material obtained by partially pressing a flexible sheet-like nonwoven material containing basic fibers and a binder having a lower melting point than the basic fibers from opposite sides and heating at least one surface of a pressed part, thereby having a cured partial area, and having an internal space capable of accommodating a wiring harness. The accommodating portion includes a hard portion and a soft portion softer than the hard portion along a longitudinal direction.
摘要翻译：其目的在于提供一种技术，其能够部分地容易地弯曲和变形容纳在保护器中的线束，而不引入用于形成能够容纳用于线束的制造侧的线束的形状的热压机。为了实现该目的，保护器包括由片材制成的容纳部分，其通过从相对侧部分地压制含有碱性纤维的柔性片状非织造材料和具有比碱性纤维更低的熔点的粘合剂而获得，并加热至少一种被加压部件的表面，从而具有固化的局部区域，并且具有能够容纳线束的内部空间。容纳部分包括硬的部分和比纵向更硬的软部分。

6. 发明授权

US08619828B2 Group III nitride semiconductor laser diode 失效
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US08619828B2
公开(公告)日：2013-12-31
申请号：US12836065
申请日：2010-07-14
申请人： Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
发明人： Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202
摘要： A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1
摘要翻译： III族氮化物衬底具有半极性主表面。第一包层具有第一导电类型，并且包括含铝的III族氮化物。第一包层设置在基板上。在第一包层上设置有源层。第二包层具有第二导电类型，并且包括含铝的III族氮化物。第二包覆层设置在有源层上。在第一包层和有源层之间和/或第二包层和有源层之间设置光导层。光引导层包括包含In x Ga 1-x N（0 @ x1 <1）的第一层和包括In x 2 Ga 1-x 2 N（x 1

7. 发明授权

US6116930A Rotary connection unit 失效
标题翻译：旋转连接单元
公开(公告)号：US6116930A
公开(公告)日：2000-09-12
申请号：US210934
申请日：1998-12-15
申请人： Tomoyuki Sakata
发明人： Tomoyuki Sakata
IPC分类号： B60R16/027 , H01R35/02 , H01R35/04 , H02G11/02
CPC分类号： H01R35/025
摘要： A rotary connection unit includes a fixed-side member, a rotary-side member rotatable to the fixed-side member around a central rotational axis, the rotary-side member and the fixed-side member defining an annular space, and a cable received in the space in such a manner that one end portion thereof is held by the fixed-side member, and the other end portion thereof is held by the rotary-side member. The space has a winding surface on which the cable is wound to a predetermined direction at a predetermined taper angle with respect to the central rotational axis. The cable is received in the space in such a manner that the cable is folded back midway so that the cable is wound to a direction opposite to the predetermined direction.
摘要翻译：旋转连接单元包括固定侧构件，围绕中心旋转轴线可旋转到固定侧构件的旋转侧构件，旋转侧构件和限定环形空间的固定侧构件以及容纳在其中的电缆该空间的一端部被固定侧构件保持，另一端部被旋转侧构件保持。该空间具有卷绕表面，电缆以相对于中心旋转轴线以预定的锥角卷绕到预定方向。电缆以这样的方式容纳在空间中，使得电缆在中间折回，使得电缆沿与预定方向相反的方向缠绕。

8. 发明申请

US20060118775A1 Headlamp 审中-公开
标题翻译：头灯
公开(公告)号：US20060118775A1
公开(公告)日：2006-06-08
申请号：US11269232
申请日：2005-11-07
申请人： Youichi Nagai , Takao Nakamura , Koji Katayama
发明人： Youichi Nagai , Takao Nakamura , Koji Katayama
IPC分类号： H01L31/0328
CPC分类号： H01L33/32 , F21S41/143 , F21S41/155 , F21Y2115/10 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2224/16245 , H01L2224/32245 , H01L2224/32257 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/00 , H01L2224/05599 , H01L2924/00011 , H01L2224/0555 , H01L2224/0556
摘要： An automotive headlamp is equipped with a light source containing one or more light-emitting devices (LEDs) and a base member (a pedestal and rear case) for securing the light source to the automobile. The LED includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; and a multi-quantum well 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this LED, the specific resistance of the GaN substrate 1 is no more than 0.5 Ω·cm, the p-type AlxGa1-xN layer 5 side is down-mounted, and light is discharged from a second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface.
摘要翻译：汽车前照灯配备有包含一个或多个发光装置（LED）的光源和用于将光源固定到汽车的基座部件（基座和后壳体）。 LED包括：GaN衬底1; 在GaN衬底1的第一主表面侧上的n型Al x Ga 1-x N层3; 位于更远离GaN衬底1的p型Al x Ga 1-x N层5与n型Al x N层5相比较， Ga 1-x N层3; 以及位于n型Al x Ga 1-x N层3和p型Al x N层3之间的多量子阱4。 Ga 1-x N层5。在该LED中，GaN衬底1的电阻率不超过0.5Ω·cm，p型Al x Ga 1-x N层5侧为并且从作为与第一主表面相对的GaN衬底1的主表面的第二主表面1a放出光。

9. 发明申请

US20190391332A1 SPOT-SIZE CONVERTER AND METHOD OF MANUFACTURING SPOT-SIZE CONVERTER 审中-公开
公开(公告)号：US20190391332A1
公开(公告)日：2019-12-26
申请号：US16445627
申请日：2019-06-19
申请人： SUMITOMO ELECTRONIC INDUSTRIES, LTD.
发明人： Naoya Kono , Takuo Hiratani , Masataka Watanabe
IPC分类号： G02B6/122 , G02B6/036 , G02B6/14 , G02B6/30
摘要： A spot-size converter includes: a support body that includes a main surface including a first to a fifth areas; a mesa structure that includes a first part on the first area and includes a second part on the second to the fourth areas; and an embedding structure that includes a first region and a second region in which a first and a second side-surfaces of the second part of the mesa structure are respectively embedded. The second part of the mesa structure includes a portion that has a width gradually decreasing in a direction from the third area toward the fifth area. The first region of the embedding structure extends along the first side-surface and terminates at one of the third and the fourth areas. The second region of the embedding structure extends along the second side-surface of the second part and is disposed on the fifth area.

10. 发明授权

US08872309B2 Composite of III-nitride crystal on laterally stacked substrates 有权
标题翻译：在侧向堆叠的基板上的III族氮化物晶体的复合物
公开(公告)号：US08872309B2
公开(公告)日：2014-10-28
申请号：US14194830
申请日：2014-03-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： Naho Mizuhara , Koji Uematsu , Michimasa Miyanaga , Keisuke Tanizaki , Hideaki Nakahata , Seiji Nakahata , Takuji Okahisa
IPC分类号： H01L29/04 , H01L29/20
CPC分类号： H01L29/045 , C30B19/02 , C30B23/025 , C30B25/20 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L29/2003 , Y10T428/24752
摘要： Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.
摘要翻译： III-III族氮化物晶体复合材料由III-氮化物块状晶体切割的特别加工的晶片组成，其主表面为{1-10±2}，{11-2±2}，{20-2±1} 或{22-4±1}取向，其中每个切片的主表面侧面朝上地彼此相邻地设置，并且III-氮化物晶体外延地存在于相邻切片的主表面上，其中III族氮化物晶体包含作为主要杂质，硅原子或氧原子。

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