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1. 发明授权

US08927962B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US08927962B2
公开(公告)日：2015-01-06
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/16 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

2. 发明授权

US08809868B2 Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate 有权
标题翻译： III族氮化物半导体器件，III族氮化物半导体器件的制造方法和外延衬底
公开(公告)号：US08809868B2
公开(公告)日：2014-08-19
申请号：US13289813
申请日：2011-11-04
申请人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Koji Nishizuka
发明人： Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Yusuke Yoshizumi , Koji Nishizuka
IPC分类号： H01L31/0312 , H01L33/00 , H01L29/20 , H01L31/0304
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/06 , H01L33/325 , H01S5/028 , H01S5/2009 , H01S5/3054 , H01S5/3063 , H01S5/3202 , H01S2302/00 , H01S2304/04
摘要： Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.
摘要翻译：提供了一种III族氮化物半导体器件，其包括导电衬底，该导电衬底包括由第一氮化镓基半导体构成的主表面和包含第一p型氮化镓基半导体层的III族氮化物半导体区域，主表面。衬底的主表面在垂直于沿着第一氮化镓基半导体的c轴延伸的参考轴的平面的不小于50度且小于130度的范围内倾斜，氧气第一p型氮化镓系半导体层的浓度Noxg为5×1017cm-3以下，第一p型氮化镓系半导体层的氧浓度Noxg与p型掺杂浓度Npd的比（Noxg / Npd）型氮化镓系半导体层不大于1/10。

3. 发明申请

US20130003769A1 GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：基于氮化镓的半导体激光器件，以及用于制造基于氮化镓的半导体激光器件的方法
公开(公告)号：US20130003769A1
公开(公告)日：2013-01-03
申请号：US13431043
申请日：2012-03-27
申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
发明人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
IPC分类号： H01S5/34 , H01L21/18
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3063 , H01S5/3202 , H01S2304/04
摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.
摘要翻译：具有降低的阈值电流的氮化镓基半导体激光器件。氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚第23层。

4. 发明申请

US20120299010A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20120299010A1
公开(公告)日：2012-11-29
申请号：US13484776
申请日：2012-05-31
申请人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
发明人： Yohei ENYA , Yusuke Yoshizumi , Takashi Kyono , Takamichi Sumitomo , Katsushi Akita , Masaki Ueno , Takao Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴半导体和设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括GaN基半导体层。基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

5. 发明申请

US20120202304A1 III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III- NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III型氮化物半导体激光器件，以及制造III型氮化物半导体激光器件的方法
公开(公告)号：US20120202304A1
公开(公告)日：2012-08-09
申请号：US13416844
申请日：2012-03-09
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
IPC分类号： H01L33/02
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有半极性主表面的衬底，所述半极性主表面包括六边形III族氮化物半导体; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括衬底和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在形成基板产品之后，形成第一和第二端面; 以及分别在第一和第二端面上形成用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。

6. 发明申请

US20120128016A1 III-NITRIDE SEMICONDUCTOR LASER DIODE 有权
标题翻译： III-NITRIDE SEMICONDUCTOR激光二极管
公开(公告)号：US20120128016A1
公开(公告)日：2012-05-24
申请号：US13328622
申请日：2011-12-16
申请人： Masahiro ADACHI , Shinji TOKUYAMA , Yohei ENYA , Takashi KYONO , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Koji KATAYAMA , Takatoshi IKEGAMI , Takao NAKAMURA
发明人： Masahiro ADACHI , Shinji TOKUYAMA , Yohei ENYA , Takashi KYONO , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Koji KATAYAMA , Takatoshi IKEGAMI , Takao NAKAMURA
IPC分类号： H01S5/32
CPC分类号： H01S5/2004 , B82Y20/00 , H01S5/22 , H01S5/309 , H01S5/3202 , H01S5/34333 , H01S2301/18 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.
摘要翻译：提供能够以低阈值激光的III族氮化物半导体激光二极管。支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。在支撑基体的主表面上方设置有n型包层区域和p型包层区域。芯型半导体区域设置在n型包层区域和p型包层区域之间。芯半导体区域包括第一光导层，有源层和第二光导层。有源层设置在第一光导层和第二光导层之间。芯半导体区域的厚度不小于0.5μm。这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

7. 发明申请

US20120114002A1 GROUP III NITRIDE SEMICONDUCTOR LASER DIODE, AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DIODE 失效
标题翻译： III族氮化物半导体激光二极管及其制造方法III族氮化物半导体激光二极管
公开(公告)号：US20120114002A1
公开(公告)日：2012-05-10
申请号：US13294378
申请日：2011-11-11
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Takao NAKAMURA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Takao NAKAMURA
IPC分类号： H01S5/32 , H01L33/02
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01S5/2009 , H01S5/34333
摘要： Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions.
摘要翻译：提供了具有能够提供高的光学限制和载流子限制的包层的III族氮化物半导体激光二极管。生长n型Al0.08Ga0.92N包覆层，使其在（20-21）面GaN衬底上晶格弛豫。在n型包覆层上生长GaN光引导层以使其晶格弛豫。生长活性层，GaN光引导层，Al0.12Ga0.88N电子阻挡层和GaN光引导层，使得在导光层上不会格子弛豫。生长p型Al0.08Ga0.92N覆层，使其在光导层上格子弛豫。生长p型GaN接触层，以便在p型覆层上不会发生晶格弛豫，以产生半导体激光器。交界处的位错密度大于其他路口的位错密度。

8. 发明授权

US08174035B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US08174035B2
公开(公告)日：2012-05-08
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
发明人： Takamichi Sumitomo , Masaki Ueno , Takashi Kyono , Yohei Enya , Yusuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

9. 发明申请

US20110210378A1 HIGH ELECTRON MOBILITY TRANSISTOR, EPITAXIAL WAFER, AND METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR 失效
标题翻译：高电子移动晶体管，外延晶体管和制造高电子移动晶体管的方法
公开(公告)号：US20110210378A1
公开(公告)日：2011-09-01
申请号：US12846311
申请日：2010-07-29
申请人： Masaki UENO , Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI
发明人： Masaki UENO , Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI
IPC分类号： H01L29/778 , H01L29/205 , H01L21/338
CPC分类号： H01L29/7781 , H01L29/2003 , H01L29/66462 , H01L29/7783
摘要： A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region.
摘要翻译：高电子迁移率晶体管包括具有III族氮化物区域的独立支撑基底，设置在第一III族氮化物阻挡层上的第一III族氮化物阻挡层，设置在第一III族氮化物阻挡层上的III族氮化物沟道层并与第一III族氮化物阻挡层形成第一异质结，在III族氮化物沟道层上设置栅电极，以在第一异质结上施加电场，在III族氮化物沟道层上的源电极和第一III族氮化物阻挡层，以及在III族氮化物沟道层和第一III族氮化物屏障上的漏电极。 III族氮化物沟道层具有压缩内部应变，并且III族氮化物沟道层的压电场在从支撑基底朝向第一III族氮化物阻挡层的方向上取向。第一异质结沿着具有相对于III族氮化物区域的c轴以40度至85度或140度至180度的范围内倾斜的倾斜角的平面延伸。

10. 发明申请

US20110180805A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法
公开(公告)号：US20110180805A1
公开(公告)日：2011-07-28
申请号：US12836144
申请日：2010-07-14
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Katsushi AKITA , Masaki UENO , Takao NAKAMURA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Katsushi AKITA , Masaki UENO , Takao NAKAMURA
IPC分类号： H01L33/32
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/3202 , H01S5/34333 , H01S2302/00
摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸，氮化物半导体，以及设置在支撑基体的主表面上的外延半导体区域。外延半导体区域包括多个GaN基半导体层。基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜，m轴和 a轴。参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜，另一个m- 轴和a轴。预定角度，第一角度和第二角度具有ALPHA =（ALPHA12 + ALPHA22）1/2的关系。外延半导体区域的最外表面的形态包括多个凹坑。坑的坑密度不大于5×104cm-2。

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