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1. 发明申请

WO2010000716A3 HETEROJUNCTION SOLAR CELL WITH ABSORBER HAVING AN INTEGRATED DOPING PROFILE 审中-公开
标题翻译：具有集成DOTIERPROFIL吸收器的异质结太阳能电池
公开(公告)号：WO2010000716A3
公开(公告)日：2010-03-11
申请号：PCT/EP2009058148
申请日：2009-06-30
申请人： INST SOLARENERGIEFORSCHUNG , HARDER NILS-PETER
发明人： HARDER NILS-PETER
IPC分类号： H01L31/028 , H01L31/0376 , H01L31/0745
CPC分类号： H01L31/028 , H01L31/03762 , H01L31/0745 , H01L31/0747 , Y02E10/547 , Y02E10/548
摘要： The invention relates to a heterojunction solar cell (1) and a method for the production thereof. The heterojunction solar cell has an absorber layer (3) made of silicon with a basic doping and at least one heterojunction layer (5, 7) of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer (3) has a doped layer at an interface (13, 15) directed toward the heterojunction layer (5, 7), the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there.
摘要翻译：异质结太阳能电池（1）及其制造方法被提出。的异质结太阳能电池具有硅与基本掺杂的吸收体层（3）和至少一个异质结层（5,7），其带隙是从所述吸收体层中的硅的不同掺杂的半导体材料构成。在这种情况下，吸收体层（3）具有在一到异质结层（5,7）定向边界表面（13，15）的掺杂层，其杂质浓度比所述吸收层的基本掺杂浓度高。由于这种掺杂，场效应能够扩散出到吸收层和异质结层和重组那里之间的界面层来实现，这防止电荷载流子吸收层对内部产生。

2. 发明申请

WO2010142683A3 METHOD FOR FORMING THIN SEMICONDUCTOR LAYER SUBSTRATES AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT, IN PARTICULAR A SOLAR CELL COMPRISING, USING SAID TYPE OF SEMICONDUCTOR LAYER SUBSTRATE 审中-公开
标题翻译：方法用于形成薄层半导体衬底和方法的半导体元件，特别是太阳电池这种半导体多层基板
公开(公告)号：WO2010142683A3
公开(公告)日：2011-09-29
申请号：PCT/EP2010058015
申请日：2010-06-08
申请人： INST SOLARENERGIEFORSCHUNG GMBH , BRENDEL ROLF , ERNST MARCO , PLAGWITZ HEIKO
发明人： BRENDEL ROLF , ERNST MARCO , PLAGWITZ HEIKO
IPC分类号： H01L31/028 , C25F3/12 , H01L21/3063 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号： H01L31/0284 , H01L21/3063 , H01L31/1804 , H01L31/1876 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for forming thin semiconductor layer substrates, wherein low porous layers (33, 37) and highly porous layers (35, 39) are formed in an alternating manner in a semiconductor substrate (1) by electrochemical etching. The thus obtained multi-layer stack can subsequently be subjected, in its totality, to additional treatment steps. For example, a passivation dielectric layer (45) can be formed on the entire surface of the low porous layers (33, 37) and the highly porous layers (35, 39). Subsequently, the low porous layers can be successively separated from each other in a mechanical manner, the highly porous layers arranged therebetween acting as a desired rupture point. It is also possible to form, in a few steps, a plurality of thin semiconductor layer substrates in the form of low porous layers (33, 37) and to obtain a good surface passivation and a reflection-reducing surface texture. The thus produced semiconductor layer substrates can be used, for example, for producing semiconductor elements, for example thin solar cells.
摘要翻译：一种形成，其中，在安装的半导体衬底（1）交替地低的多孔层（33，37）和高度多孔层（35，39）可以通过电化学蚀刻来形成上述半导体薄膜的衬底的方法。这样形成的多层叠堆然后可以作为整体进行进一步的处理步骤。例如，低的多孔层（33，37）和高度多孔层（35，39）的整个表面上，一钝化电介质层（45）形成。随后，可以将低多孔层依次机械分离，由此位于它们之间的高孔隙层可以各自用作预定的断裂点。具有很少的工艺步骤可以是如在低多孔层（33，37）包括一个良好的表面钝化和反射减少的表面纹理的形式形式的多个半导体薄膜基板。这样制造的半导体层基板例如可以用于制造薄型太阳能电池等半导体装置。

3. 发明申请

WO2010142684A4 SOLAR CELL HAVING A CONTACT STRUCTURE WITH LOW RECOMBINATION LOSSES, AND METHOD FOR THE PRODUCTION OF SUCH SOLAR CELLS 审中-公开
标题翻译：具有低重建损耗的接触结构的太阳能电池和这种太阳能电池的制造工艺
公开(公告)号：WO2010142684A4
公开(公告)日：2011-07-21
申请号：PCT/EP2010058016
申请日：2010-06-08
申请人： INST SOLARENERGIEFORSCHUNG , HARDER NILS-PETER , SCHMIDT JAN , BRENDEL ROLF
发明人： HARDER NILS-PETER , SCHMIDT JAN , BRENDEL ROLF
IPC分类号： H01L31/0224 , H01L31/062 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/062 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： A concept for a highly efficient solar cell, especially on the basis of high-quality crystalline silicon, as well as a method for producing such a solar cell are disclosed. In the solar cell (1), a contact structure (3) is formed using a layered stack arrangement that comprises a first layer (19) made of an electrically insulating material, a second layer (21) made of a semiconductor material, and a third layer (22) made of an electrically conductive material. The first (dielectric) layer is disposed between the substrate (17) and the second (semiconducting) layer (21) and is designed in such a way that a significant degree of charge carrier tunneling can occur between the substrate (17) and the second layer (21) through the first layer (19). The semiconductor material of the solar cell substrate and the semiconductor material of the second layer have different electrical properties as a result of different band structures such that the electron/hole selectivity of the tunneling process within the contact structure can be influenced, thus allowing the recombination losses caused by the contact structure to be significantly reduced.
摘要翻译：提出了特别基于高质量晶体硅的高效太阳能电池的概念以及用于这种太阳能电池的生产方法。在太阳能电池（1）通过包括由电绝缘材料制成的第一层（19）的层堆叠排列的方式形成的，一个接触结构（3），由半导体材料制成的第二层（21）和一个第三层（22），其电包括导电材料。第一介电层是在所述基板（17）和（21），其设置和构造成在第二半导体层之间的这种情况下的电荷载流子在基板（17）和通过所述第一层的第二层（21）之间的显著隧穿（19）成为可能。由于不同的带结构，太阳能电池基板的半导体材料和第二层的半导体材料具有不同的电特性。以这种方式，可以影响接触结构内的隧穿过程的电子/空穴选择性，由此可以通过导致复合损失的接触结构显着降低。

4. 发明申请

WO2006111304A8 REAR CONTACT SOLAR CELL AND METHOD FOR MAKING SAME 审中-公开
标题翻译：背接触用于太阳能电池和方法及其
公开(公告)号：WO2006111304A8
公开(公告)日：2007-11-08
申请号：PCT/EP2006003331
申请日：2006-04-11
申请人： INST SOLARENERGIEFORSCHUNG , ENGELHART PETER , TEPPE ANDREAS , GRISCHKE RAINER , WADE ROBERT
发明人： ENGELHART PETER , TEPPE ANDREAS , GRISCHKE RAINER , WADE ROBERT
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022458 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention concerns a solar cell (1) and a method for making same, said solar cell (1) comprising on its rear surface (3) both the emission contact (43) and the base contact (45), those two contacts (43, 45) being electrically isolated from each other by flanks (5) whereof the metal coating has been removed. The emitting zones (4) of the rear surface (3) of the cell are connected by channels to the transmitter (9) of the front face (8) of the cell. The emitting zones (4) of the rear surface (3) of the cell and the channels (7) consist of a laser. The metal coating of the side walls is removed by selective etching, said metal coating being removed only in the zone of the flanks (5) where the etching barrier layer (11) is insufficient.
摘要翻译：本发明公开了一种太阳能电池（1）和一种用于制造太阳能电池的方法。在太阳能电池（1），两个发射极接触（43）和在所述传感器（3）的后部的基极接触（45）被布置。这两个触点（43，45）电由侧面（5），在其上从彼此除去金属化隔离。发射极区域（4）电池的背面的通孔通道（7），以在电池的前侧（8）的发射极（9）连接。两个发射极区域（4）电池的背面和所述通道（7）利用激光形成。金属化的上侧面去除是通过选择性蚀刻完成的，其特征在于，金属化仅在侧面（5），其中刻蚀阻挡层（11）不充分形成，蚀刻掉的区域。

5. 发明申请

WO2010122028A2 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, HAVING A LOCALLY OPEN DIELECTRIC LAYER AND CORRESPONDING SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：方法的半导体元件，特别是太阳能电池与当地OPEN介质和相应的半导体部件
公开(公告)号：WO2010122028A2
公开(公告)日：2010-10-28
申请号：PCT/EP2010055210
申请日：2010-04-20
申请人： INST SOLARENERGIEFORSCHUNG , TERHEIDEN BARBARA , HAASE FELIX , NEUBERT TOBIAS
发明人： TERHEIDEN BARBARA , HAASE FELIX , NEUBERT TOBIAS
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , B23K26/361 , B23K26/40 , B23K2203/172 , H01L31/02167 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a semiconductor component (100) and a corresponding semiconductor component. The production method comprises the following steps: providing a silicon substrate (1); forming a first layer (3) made of amorphous silicon on a surface of the silicon substrate (1); forming a second layer (5) made of a dielectric on the first layer (3); and locally removing the second layer (5) in ablation areas (9) by irradiating the silicon substrate (1) and the layers (3, 5) located thereon with laser light (7). The laser light (7) is absorbed mainly in the amorphous silicon layer (3), wherein vaporization of amorphous silicon causes ablation of the dielectric layer (5) lying above the amorphous silicon. However, the amorphous silicon layer (3) is not completely removed. A residual layer remains and is used to reliably form an electrical contact with the silicon substrate (1).
摘要翻译：它提出了一种用于半导体装置100和对应的半导体装置的制造方法。该制造方法包括以下步骤：提供硅衬底（1）; 在硅衬底（1）的一个表面上形成非晶硅的第一层（3）; 形成第一层（3）上由电介质构成的第二层（5）; 和通过在硅衬底（1）的照射和其上的层局部地去除在消融区域（9），第二层（5）（3，5）用激光光（7）。激光（7）的被吸收主要是在非晶质硅层（3），其特征在于它是由非晶质硅的蒸发至（5）一个消融上覆电介质层。非晶硅层（3）不完全去除。残余层保留并用于形成与硅衬底（1）可靠的电接触。

6. 发明申请

WO2010034725A3 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER 审中-公开
标题翻译：基于薄硅层制造半导体组件特别是太阳能电池的方法
公开(公告)号：WO2010034725A3
公开(公告)日：2010-09-23
申请号：PCT/EP2009062286
申请日：2009-09-22
申请人： INST SOLARENERGIEFORSCHUNG , HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
发明人： HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/76259 , Y02E10/547 , Y02P70/521
摘要： A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
摘要翻译：一种基于硅薄膜生产半导体元件，特别是太阳能电池的方法。提出了一种基于硅薄膜（5）制造太阳能电池的方法。该方法提出：准备硅衬底（1）; 在硅衬底（1）的表面上形成多孔层（3）; 在多孔层（3）上沉积硅薄膜（5）; 以及将多孔层（3）用作预设断裂点，从硅衬底（1）分离薄硅层（5）。多孔层（3）在此由硅衬底（1）的无电流化学蚀刻形成。通过省去传统使用的阳极蚀刻和替换无电流化学蚀刻，生产工艺可以大大简化。

7. 发明申请

WO2010003784A3 SILICON SOLAR CELL COMPRISING A PASSIVATED P-TYPE SURFACE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：针对同一制造钝化p型表面及方法硅太阳能电池
公开(公告)号：WO2010003784A3
公开(公告)日：2010-07-08
申请号：PCT/EP2009057483
申请日：2009-06-16
申请人： INST SOLARENERGIEFORSCHUNG , SCHMIDT JAN , BOCK ROBERT
发明人： SCHMIDT JAN , BOCK ROBERT
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1868 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a silicon solar cell (1) and to a method for producing the same. According to the invention, a layer containing aluminium is applied to the surface of a silicon substrate (2), preferably by means of screen printing, and is subsequently baked to form an aluminium-doped silicon region (13). Excess aluminium and the aluminium-silicon eutectic are subsequently etched away and in addition the aluminium-doped silicon region (13) is back-etched. The surface of the aluminium-doped silicon region (13) is passivated using a dielectric layer, preferably consisting of silicon nitride containing hydrogen. This permits highly efficient solar cells to be produced using known production technology.
摘要翻译：本发明提供一种硅太阳能电池（1）和它们的制备的方法。这里，含铝层被施加到硅衬底（2）的表面，优选地通过丝网印刷，并随后焙烧，从而形成铝掺杂的硅区域（13）。然后过量的铝和铝 - 硅共晶被蚀刻掉，也是铝掺杂的硅区域（13）的回蚀。随后，具有电介质层的铝掺杂的硅区域（13）的表面，优选钝化含氢氮化硅。以这种方式，太阳能电池高效率可使用已知的制造技术来制造。

8. 发明申请

WO2009074469A3 REAR-CONTACT SOLAR CELL HAVING LARGE REAR SIDE EMITTER REGIONS AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：配备了大BACK发射极面积及其方法背接触太阳能电池
公开(公告)号：WO2009074469A3
公开(公告)日：2009-09-24
申请号：PCT/EP2008066445
申请日：2008-11-28
申请人： INST SOLARENERGIEFORSCHUNG , HARDER NILS-PETER
发明人： HARDER NILS-PETER
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/0682 , H01L31/022441 , Y02E10/547
摘要： The invention relates to a rear-contact solar cell and to a method for producing the same. The rear-contact solar cell comprises a semiconductor substrate (1) on the rear side surface (3) of which emitter regions (5), contacted by emitter contacts (11), and base regions (7), contacted by base contacts (13), are defined. The emitter regions and the base regions overlap at least in overlap regions (19), the emitter regions (5) in the overlap regions (19) reaching deeper into the semiconductor substrate (1) than the base regions (7), when seen from the rear side surface of the solar cell. As a result, a large area percentage of the rear side of the semiconductor substrate can be covered with a charge-collecting emitter, said emitter being at least partially buried in the interior of the semiconductor substrate (1) so that there is no risk of the base contacts (13) provoking a short circuit towards the buried emitter regions (5).
摘要翻译：中描述了一种背接触太阳能电池和用于其制备的方法。背接触太阳能电池包括：半导体衬底（1），在其后方侧表面（3）发射极区域（5），其由发射器触点（11）和基座部分（7）相接触，将接触基极接触（13），形成是。发射极区域和基极区域中的重叠区域中，至少重叠，其中，所述发射极区域（5）在从太阳能电池的后侧表面看从更深的半导体衬底中的重叠区域（19）（1）延伸的基底部分（7）。可通过发射器的半导体基板的背面侧的大面积比率来实现，在一方面，而是可以通过电荷载流子收集发射器在掩埋“”的半导体衬底（1）的内部被覆盖，至少部分，从而不存在风险，即基极接触 13挑起短路到掩埋发射极区（5）。

9. 发明申请

WO2006048319A3 METHOD FOR PRODUCING A TWO-SIDE LIGHT-SENSITIVE SOLAR CELL AND DOUBLE-SIDED LIGHT-SENSITIVE SOLAR CELL 审中-公开
标题翻译：生产双光敏太阳能电池和双光敏太阳能电池的方法
公开(公告)号：WO2006048319A3
公开(公告)日：2006-07-20
申请号：PCT/EP2005011883
申请日：2005-11-07
申请人： INST SOLARENERGIEFORSCHUNG , TEPPE ANDREAS , MEYER RUEDIGER , ENGELHART PETER
发明人： TEPPE ANDREAS , MEYER RUEDIGER , ENGELHART PETER
IPC分类号： H01L31/0224
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/035281 , Y02E10/547
摘要： The invention relates to a method for producing a double-sided light-sensitive solar cell (10). According to said invention, a semiconductor substance (11) whose rear face (13) is embodied in the form of web-shaped locally elevated structures (14) and line- or strip-shaped recesses (15, 16) is used. In addition, first and second contacts (22, 23) for collecting minority or majority charge carriers are disposed on one of two longitudinal sides (18, 19) of said recesses, respectively and not on the other longitudinal sides (20, 21) opposite to said recesses and/or on a plate (17).
摘要翻译：本发明涉及一种方法，用于制造双面光敏太阳能电池（10），以及这样的本身，它建议在背面（13）局部地凸起的脊形结构（14）和线性的或使用的半导体衬底（11）产生带状凹槽（15,16）。进一步提出的是在每种情况下只有这些凹槽（18，19）的两个纵向壁中的一个，但不是以这些凹部的各自的另一相对的纵向壁（20，21）和/或在高原（17）第一和第二联系人（22,23）用于收集少数或多数承运人。

10. 发明申请

WO2010142683A4 METHOD FOR FORMING THIN SEMICONDUCTOR LAYER SUBSTRATES AND METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT, IN PARTICULAR A SOLAR CELL COMPRISING, USING SAID TYPE OF SEMICONDUCTOR LAYER SUBSTRATE 审中-公开
标题翻译：方法用于形成薄层半导体衬底和方法的半导体元件，特别是太阳电池这种半导体多层基板
公开(公告)号：WO2010142683A4
公开(公告)日：2011-11-17
申请号：PCT/EP2010058015
申请日：2010-06-08
申请人： INST SOLARENERGIEFORSCHUNG , BRENDEL ROLF , ERNST MARCO , PLAGWITZ HEIKO
发明人： BRENDEL ROLF , ERNST MARCO , PLAGWITZ HEIKO
IPC分类号： H01L31/028 , C25F3/12 , H01L21/3063 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号： H01L31/0284 , H01L21/3063 , H01L31/1804 , H01L31/1876 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for forming thin semiconductor layer substrates, wherein low porous layers (33, 37) and highly porous layers (35, 39) are formed in an alternating manner in a semiconductor substrate (1) by electrochemical etching. The thus obtained multi-layer stack can subsequently be subjected, in its totality, to additional treatment steps. For example, a passivation dielectric layer (45) can be formed on the entire surface of the low porous layers (33, 37) and the highly porous layers (35, 39). Subsequently, the low porous layers can be successively separated from each other in a mechanical manner, the highly porous layers arranged therebetween acting as a desired rupture point. It is also possible to form, in a few steps, a plurality of thin semiconductor layer substrates in the form of low porous layers (33, 37) and to obtain a good surface passivation and a reflection-reducing surface texture. The thus produced semiconductor layer substrates can be used, for example, for producing semiconductor elements, for example thin solar cells.
摘要翻译：一种形成，其中，在安装的半导体衬底（1）交替地低的多孔层（33，37）和高度多孔层（35，39）可以通过电化学蚀刻来形成上述半导体薄膜的衬底的方法。由此形成的多层堆叠可以进行作为然后整体进一步的处理步骤。例如，低的多孔层（33，37）和高度多孔层（35，39）的整个表面上，一钝化电介质层（45）形成。随后，将低多孔层可以机械地彼此相继，其中，所述中间高的多孔层可以作为预定断裂点分离。具有很少的工艺步骤可以是如在低多孔层（33，37）包括一个良好的表面钝化和反射减少的表面纹理的形式形式的多个半导体薄膜基板。以这种方式制造的半导体层的基板，可以使用例如用于半导体器件生产的诸如薄太阳能电池。

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