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1. 发明申请

WO2010034725A3 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER 审中-公开
标题翻译：基于薄硅层制造半导体组件特别是太阳能电池的方法
公开(公告)号：WO2010034725A3
公开(公告)日：2010-09-23
申请号：PCT/EP2009062286
申请日：2009-09-22
申请人： INST SOLARENERGIEFORSCHUNG , HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
发明人： HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/76259 , Y02E10/547 , Y02P70/521
摘要： A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
摘要翻译：一种基于硅薄膜生产半导体元件，特别是太阳能电池的方法。提出了一种基于硅薄膜（5）制造太阳能电池的方法。该方法提出：准备硅衬底（1）; 在硅衬底（1）的表面上形成多孔层（3）; 在多孔层（3）上沉积硅薄膜（5）; 以及将多孔层（3）用作预设断裂点，从硅衬底（1）分离薄硅层（5）。多孔层（3）在此由硅衬底（1）的无电流化学蚀刻形成。通过省去传统使用的阳极蚀刻和替换无电流化学蚀刻，生产工艺可以大大简化。

2. 发明申请

WO2010034725A4 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, ON THE BASIS OF A THIN SILICON LAYER 审中-公开
标题翻译：在特定的太阳能电池中生产半导体元件的方法，在薄层硅的基础上
公开(公告)号：WO2010034725A4
公开(公告)日：2010-11-11
申请号：PCT/EP2009062286
申请日：2009-09-22
申请人： INST SOLARENERGIEFORSCHUNG , HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
发明人： HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/76259 , Y02E10/547 , Y02P70/521
摘要： A method for the production of a semiconductor component, in particular a solar cell, on the basis of a silicon thin film. A method is proposed for the production of a solar cell on the basis of a silicon thin film (5). The method presents: preparing of a silicon substrate (1); forming of a porous layer (3) at a surface of the silicon substrate (1); depositing of a silicon thin film (5) on the porous layer (3); and separating of the thin silicon layer (5) from the silicon substrate (1), with the porous layer (3) serving as a preset breaking point. The porous layer (3) is formed here by currentless chemical etching of the silicon substrate (1). By dispensing with conventionally used anodic etching and replacing with currentless chemical etching, the production process can be simplified considerably.
摘要翻译：一种基于硅薄膜制造半导体元件，特别是太阳能电池的方法。提出了一种基于硅薄膜（5）制造太阳能电池的方法。该方法提供：制备硅衬底（1）; 在硅衬底（1）的表面上形成多孔层（3）; 在多孔层（3）上沉积硅薄膜（5）; 以及将所述薄硅层（5）与所述硅基板（1）分离，所述多孔层（3）作为预设断裂点。这里通过硅衬底（1）的无电流化学蚀刻形成多孔层（3）。通过分配常规使用的阳极蚀刻和替代无电流化学蚀刻，可以大大简化生产工艺。

3. 发明专利

DE102008048498A1 未知
公开(公告)号：DE102008048498A1
公开(公告)日：2010-04-08
申请号：DE102008048498
申请日：2008-09-23
申请人： INST SOLARENERGIEFORSCHUNG
发明人： HENSEN JAN , WOLF ANDREAS , TERHEIDEN BARBARA
IPC分类号： H01L31/18 , C30B25/02 , H01L21/20 , H01L21/306

4. 发明申请

WO2011039092A3 SPRING ARRANGEMENT FOR CONTROLLING THE RIDE IN A VEHICLE 审中-公开
标题翻译：用于车辆中的水平控制的弹簧布置
公开(公告)号：WO2011039092A3
公开(公告)日：2011-10-13
申请号：PCT/EP2010063993
申请日：2010-09-22
申请人： BOMBARDIER TRANSP GMBH , ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
发明人： ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
IPC分类号： B61F5/14
CPC分类号： B61F5/14 , B61F5/02
摘要： The invention relates to a spring arrangement for supporting a car body on a suspension of a vehicle for regulating the level thereof, in particular of a railway vehicle, having a spring device (105) and an actuator device (107), wherein the spring device (105) takes up a first installation space, the actuator device (107) takes up a second installation space, the spring device (105) and the actuator device (107) being connected to each other in an operational direction in a kinematically serial arrangement, and the actuator device (107) being designed for at least partially compensating for a change in length of the spring device (105) in the operational direction by displacing an actuator component (107 2) in the operational direction, and wherein the first installation space and the second installation space overlap each other in the operational direction in an overlap region. The invention further relates to a vehicle having such a spring arrangement.
摘要翻译：本发明涉及一种弹簧装置，用于电平调节的车辆的底盘上支承车体，特别是轨道车辆，包括弹簧装置（105）和致动器（107），所述弹簧装置（105）占据一第一空间，所述致动器（107）权利的第二空间，所述弹簧装置（105）和所述致动器（107）在彼此之间以及致动器装置（107）的运动串联布置一个操作方向被连接由移位到适于在作用方向的弹簧装置（105）的长度变化补偿至少部分地在操作方向上的致动器部件（107 2），并且其中所述第一空间和在彼此重叠它进一步涉及一种车辆用这种弹簧装置的区域中作用的方向上的第二空间重叠。

5. 发明申请

WO2011039092A9 SPRING ARRANGEMENT FOR CONTROLLING THE RIDE IN A VEHICLE 审中-公开
公开(公告)号：WO2011039092A9
公开(公告)日：2011-08-18
申请号：PCT/EP2010063993
申请日：2010-09-22
申请人： BOMBARDIER TRANSP GMBH , ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
发明人： ZANUTTI CEDRIC , WUSCHING MICHAEL , WOLF ANDREAS
IPC分类号： B61F5/14
CPC分类号： B61F5/14 , B61F5/02
摘要： The invention relates to a spring arrangement for supporting a car body on a suspension of a vehicle for regulating the level thereof, in particular of a railway vehicle, having a spring device (105) and an actuator device (107), wherein the spring device (105) takes up a first installation space, the actuator device (107) takes up a second installation space, the spring device (105) and the actuator device (107) being connected to each other in an operational direction in a kinematically serial arrangement, and the actuator device (107) being designed for at least partially compensating for a change in length of the spring device (105) in the operational direction by displacing an actuator component (107 2) in the operational direction, and wherein the first installation space and the second installation space overlap each other in the operational direction in an overlap region. The invention further relates to a vehicle having such a spring arrangement.

6. 发明申请

WO2005105844A3 PREPARATION OF SCFV ANTIBODY FRAGMENTS 审中-公开
标题翻译： SCFV抗体片段的制备
公开(公告)号：WO2005105844A3
公开(公告)日：2006-01-26
申请号：PCT/EP2005004893
申请日：2005-05-04
申请人： MICROMET AG , RAUM TOBIAS , HENCKEL JULIA , KRINNER EVA , MITTELSTRASS SILKE , WOLF ANDREAS
发明人： RAUM TOBIAS , HENCKEL JULIA , KRINNER EVA , MITTELSTRASS SILKE , WOLF ANDREAS
IPC分类号： C07K16/00 , C07K16/24
CPC分类号： C07K16/243 , C07K16/005 , C07K2317/622 , C07K2317/73
摘要： The invention relates to methods of preparing antibody fragments. The invention further relates to antibody fragments prepared by said methods. The invention further relates to antibody variable regions comprised in antibody fragments producible by said methods.
摘要翻译：本发明涉及制备抗体片段的方法。本发明还涉及通过所述方法制备的抗体片段。本发明还涉及包含在可通过所述方法生产的抗体片段中的抗体可变区。

7. 发明申请

WO2012104198A2 PHOTOVOLTAIC SOLAR CELL AND A METHOD FOR THE PRODUCTION OF SAME 审中-公开
标题翻译：光伏太阳能电池及其制备方法
公开(公告)号：WO2012104198A2
公开(公告)日：2012-08-09
申请号：PCT/EP2012051243
申请日：2012-01-26
申请人： FRAUNHOFER GES FORSCHUNG , THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , WOLF ANDREAS , BIRO DANIEL
发明人： THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , WOLF ANDREAS , BIRO DANIEL
IPC分类号： H01L31/068
CPC分类号： H01L31/02245 , H01L27/1421 , H01L31/0682 , Y02E10/547
摘要： The invention relates to a photovoltaic solar cell for converting incident electromagnetic radiation into electrical energy, comprising at least one base region of a base-doping type, designed in a silicon substrate; at least one emitter region of an emitter-doping type that is of an opposite doping type to the base-doping type; at least one metallic base-contacting structure connected, in an electrically conductive manner, to the base region, and at least one metallic emitter-contacting structure connected, in an electrically conductive manner, to the emitter region, the base region and emitter region being arranged in such a manner that a pn-junction is formed at least in some regions between said base and emitter regions. It is essential that the base-contacting structure overlaps the emitter region in a base-bypass region and that in said overlap region, a diode-like semiconductor contact is designed between the base-contacting structure and the emitter region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact, and/or that the emitter-contacting structure overlaps the base region in an emitter-bypass region and that in this overlap region, a diode-like semiconductor contact is designed between the emitter-contacting structure and the base region, said semiconductor contact being designed as a metal semiconductor contact or as a metal-insulator-semiconductor contact. The invention also relates to a method for producing a solar cell.
摘要翻译：本发明涉及一种用于将入射电磁辐射转化为电能的光伏太阳能电池，包括至少一个形成在碱掺杂类型的硅衬底基区; 的掺杂型发射极，其发射极掺杂类型是相反的基本掺杂类型的掺杂类型的至少一个发射极区; 至少一个金属Basiskontaktierungsstruktur其中Basiskontaktierungsstruktur导电地连接到Emitterkontaktierungsstruktur导电地连接到所述发射极区域的基极区域和至少一个金属Emitterkontaktierungsstruktur，所述基区和发射极区被布置成使得所述基部之间以及发射极区域至少局部，形成pn 形成的过渡。至关重要的是，该Basiskontaktierungsstruktur在碱旁路区域重叠的发射极区和在该重叠区域中Basiskontaktierungsstruktur和发射极区，其中半导体接触形成为金属 - 半导体接触或金属 - 绝缘体 - 半导体接触和/或在发射极旁路区域Emitterkontaktierungsstruktur之间形成的二极管型半导体接触的是基极区重叠和形成在此重叠区域中，其半导体接触形成为金属 - 半导体接触或金属 - 绝缘体 - 半导体接触Emitterkontaktierungsstruktur和基极区之间的二极管型半导体接触。本发明还涉及一种用于制造太阳能电池的方法。

8. 发明专利

ES2427156T3 Procedimiento para la fabricación de un elemento de construcción semiconductor con una zona superficial dopada selectivamente empleando difusión por fuera y correspondiente elemento de construcción semiconductor 未知
公开(公告)号：ES2427156T3
公开(公告)日：2013-10-29
申请号：ES07723432
申请日：2007-03-20
申请人： INST SOLARENERGIEFORSCHUNG
发明人： BRENDEL ROLF , TERHEIDEN BARBARA , WOLF ANDREAS
IPC分类号： H01L31/18 , H01L21/00
摘要： Procedimiento para fabricar un elemento de construcción semiconductor con una zona superficial (4) dopada selectivamente, que presenta: Preparar un substrato portador semiconductor dopado (1); Producir una capa de separación (2) en una superficie del substrato portador semiconductor; Precipitar una capa semiconductora dopada (3) sobre la capa de separación; Disolver la capa semiconductora dopada del substrato portador semiconductor; en el cual los parámetros de proceso, que comprenden al menos un parámetro del grupo temperatura de proceso, desarrollo de la temperatura de proceso y duración del proceso, se eligen de manera que mediante difusión de cuerpo sólido dopantes de la capa de separación se difunden en la capa semiconductora precipitada, para formar la zona superficial dopada selectivamente, presentando la zona superficial dopada selectivamente un dopado relativamente fuerte en comparación con la capa semiconductora restante, de manera que la zona superficial presenta una resistencia de capa de menos de 500 Ohmios/cuadrado.

9. 发明专利

DE102006013313A1 未知
公开(公告)号：DE102006013313A1
公开(公告)日：2007-09-27
申请号：DE102006013313
申请日：2006-03-21
申请人： INST SOLARENERGIEFORSCHUNG
发明人： BRENDEL ROLF , TERHEIDEN BARBARA , WOLF ANDREAS
IPC分类号： H01L31/18 , H01L21/225 , H01L31/068
摘要： The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.

10. 发明申请

WO2011157422A3 METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：一种用于生产光伏太阳能电池
公开(公告)号：WO2011157422A3
公开(公告)日：2012-12-27
申请号：PCT/EP2011002968
申请日：2011-06-16
申请人： FRAUNHOFER GES FORSCHUNG , MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
发明人： MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell, comprising the following steps: A. texturising a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a flat low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate by means of thermal oxidation.
摘要翻译：本发明涉及一种用于制造光伏太阳能电池，包括以下方法步骤：A.纹理化半导体衬底的前侧（2）; B.生成上的前侧的选择性发射极的掺杂（2）通过施加到前侧的半导体基板（2）形成的平面Niedrigdotierbereich（4）和在其内的本地Hochdotierbereich（3）; 和C.施加至少一个金属发射极接触结构上的前侧（2）的半导体衬底，至少在局部高掺杂的区域，其中所述方法之间同时步骤B和C在前面和在半导体衬底各自具有氧化硅层（在步骤B1图5a，5b的背面的）通过热氧化产生的。

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