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1. 发明申请

WO1988006802A1 IMPROVED ION-IMPLANTED GaAs FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：改进的ION-IMPLANAT GaAs场效应晶体管
公开(公告)号：WO1988006802A1
公开(公告)日：1988-09-07
申请号：PCT/US1988000595
申请日：1988-02-25
申请人： AVANTEK, INC.
发明人： AVANTEK, INC. , BANERJEE, Indrajit , GREGORY, Paul, E. , CHYE, Patrick, W.
IPC分类号： H01L21/265
CPC分类号： H01L29/812 , H01L21/2654 , H01L29/045 , H01L29/1075
摘要： An improved performance semiconductor device fabricated by ion implanting GaAs substrates having a (211) crystallographic orientation is disclosed. More specifically, a semiconductor device according to the present invention comprises a semi-insulating GaAs single crystalline substrate having a planar surface lying substantially parallel to a (211) crystalline plane and having an active layer formed in the surface of the GaAs substrate by ion implantation.
摘要翻译：公开了通过离子注入具有（211）晶体取向的GaAs衬底制造的改进的性能半导体器件。更具体地，根据本发明的半导体器件包括半绝缘GaAs单晶衬底，其具有基本平行于（211）晶面的平面，并且通过离子注入在GaAs衬底的表面中形成有源层。

2. 发明授权

US4954790A Enhanced coupled, even mode terminated baluns, and mixers and modulators constructed therefrom 失效
标题翻译：增强耦合，偶模式终端平衡 - 不平衡变压器，以及由此构成的混频器和调制器
公开(公告)号：US4954790A
公开(公告)日：1990-09-04
申请号：US437510
申请日：1989-11-15
申请人： Richard G. Barber
发明人： Richard G. Barber
IPC分类号： H03D7/14 , H03D9/06 , H03H7/42
CPC分类号： H03D9/0633 , H03H7/42 , H03D2200/0013 , H03D2200/0023 , H03D7/1408
摘要： A balun section formed of a pair of transmission lines connected between separate pairs of corresponding input and output terminals with a pair of capacitors connected in series between the output terminals and another transmission line connected in series with a resistor between the circuit ground and the interconnection between the pair of capacitors. A multisection balun is constructed from a plurality of such balun sections connected in cascade. In one embodiment, the outputs of a pair of multisection baluns are supplied to a circuit such as a mixer or the like.
摘要翻译：平衡 - 不平衡转换部分由一对传输线组成，该对传输线连接在分离的相应输入和输出端子对之间，一对电容器串联连接在输出端子与另一传输线路之间，该传输线路与电路之间的电阻串联连接在电路接地与互连之间这对电容器。多级平衡 - 不平衡变换器由多个级联连接的平衡 - 不平衡转换器构成。在一个实施例中，一对多区域巴伦的输出被提供给诸如混合器等的电路。

3. 发明授权

US4808273A Method of forming completely metallized via holes in semiconductors 失效
标题翻译：在半导体中形成完全金属化的通孔的方法
公开(公告)号：US4808273A
公开(公告)日：1989-02-28
申请号：US192343
申请日：1988-05-10
申请人： Chang-Hwang Hua , Ding-Yuan S. Day , Simon S. Chan
发明人： Chang-Hwang Hua , Ding-Yuan S. Day , Simon S. Chan
IPC分类号： H01L21/74 , H01L21/768 , C25D5/02
CPC分类号： H01L21/76898
摘要： A method is disclosed for forming completely metallized via holes in semiconductor wafers. Metal pads are formed on one face of a semiconductor wafer together with a conductive interconnecting network. An insulating layer is then deposited to cover this face of the wafer. Holes are etched in the opposite face of the wafer up to and exposing a portion of the metal pads. The via holes are then completely filled with metal by means of electroplating, using the metal pads as a cathode.
摘要翻译：公开了一种用于在半导体晶片中形成完全金属化的通孔的方法。金属焊盘与导电互连网络一起形成在半导体晶片的一个面上。然后沉积绝缘层以覆盖晶片的这个面。孔在晶片的相对表面被蚀刻，直至并暴露出金属焊盘的一部分。然后使用金属垫作为阴极，通过电镀将通孔用金属完全填充。

4. 再颁专利

USRE29844E Unit transistor amplifier with matched input and output impedances 失效
标题翻译：具有匹配输入和输出阻抗的单位晶体管放大器
公开(公告)号：USRE29844E
公开(公告)日：1978-11-21
申请号：US780314
申请日：1977-03-23
申请人： Leonard D. Seader , James E. Sterrett
发明人： Leonard D. Seader , James E. Sterrett
IPC分类号： H03F1/56
CPC分类号： H03F1/56
摘要： An amplifier having a combination of local series and shunt feedback to provide matched input and output impedances permitting cascading of a number of amplifiers or amplifiers and other devices without signal degradation. .Iadd.

5. 发明授权

US4978639A Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips 失效
标题翻译：在半导体芯片上同时形成通孔和环绕电镀的方法
公开(公告)号：US4978639A
公开(公告)日：1990-12-18
申请号：US295300
申请日：1989-01-10
申请人： Chang-Hwang Hua , Simon S. Chan , Ding-Yuan S. Day , Adrian C. Lee
发明人： Chang-Hwang Hua , Simon S. Chan , Ding-Yuan S. Day , Adrian C. Lee
IPC分类号： H01L21/288 , H01L21/768
CPC分类号： H01L21/78 , H01L21/288 , H01L21/76898 , Y10S148/028 , Y10S148/135 , Y10S438/977
摘要： Metallized via-holes and a wraparound metal plating are simultaneously formed on semiconductor chips by patterning a photoresist mask on the front surface of the wafer to open windows over metal pads as well as the grid areas where wraparound plating is desired; etching off the exposed metal if necessary and forming via-holes and grooves in the wafer by reactive ion etching to a depth which is less than the total thickness of the wafer; depositing a thin conductive film along the walls of the grooves and via-holes by electroless methods; plating the walls of the grooves and the via-holes with conductive metal by electrolytic methods; removing the back surface of the wafer ("backlapping") along with the floors of both the grooves and the via-holes, to expose the metal on the wall of the via-holes and separate the individual chips; and, depositing conductive metal on the back surface of the individual chips to complete the grounding path.
摘要翻译：在半导体芯片上同时形成金属化的通孔和环绕的金属电镀，方法是在晶片的前表面上形成光致抗蚀剂掩模以在金属焊盘上打开窗口以及需要环绕电镀的栅格区域; 如果需要则蚀刻暴露的金属，并通过反应离子蚀刻在晶片中形成通孔和沟槽，其深度小于晶片的总厚度; 通过化学镀方法沿沟槽和通孔的壁沉积薄导电膜; 通过电解方法用导电金属电镀槽和通孔; 与两个槽和通孔的地板一起去除晶片的背面（“后退”），以露出通孔壁上的金属并分离各个芯片; 并且在各个芯片的背面上沉积导电金属，以完成接地路径。

6. 发明授权

US4926292A Broadband printed spiral 失效
标题翻译：宽带印刷螺旋
公开(公告)号：US4926292A
公开(公告)日：1990-05-15
申请号：US391459
申请日：1989-08-09
申请人： Marshall Maple
发明人： Marshall Maple
IPC分类号： H01F17/00 , H01L27/01 , H05K1/16
CPC分类号： H05K1/165 , H01F17/0006 , H01L27/016 , H05K1/167 , H05K2201/0317 , Y10T29/49002
摘要： A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.
摘要翻译：表现出低Q的薄膜印刷电路电感元件，其中导电螺旋沉积在绝缘基板上，电阻链路连接在螺旋的相邻匝之间。因此阻尼了固有共振。

7. 发明授权

US4691380A Quad-ridge waveguide mixer 失效
标题翻译：四脊波导混频器
公开(公告)号：US4691380A
公开(公告)日：1987-09-01
申请号：US859617
申请日：1986-05-05
申请人： Wayne F. Westgate
发明人： Wayne F. Westgate
IPC分类号： H01P1/161 , H03D9/06 , H04B1/26
CPC分类号： H03D9/0616 , H01P1/161
摘要： A double-balanced waveguide mixer is disclosed that utilizes a quad-ridge waveguide and a quad-diode ring. In a down-converter version of the mixer, the input signal is applied to one pair of opposed ridges of the quad-ridge waveguide and the local oscillator signal is applied to the other pair of opposed ridges. The diode ring is coupled through capacitors to one pair of opposed ridges, and is directly connected to the other pair of opposed ridges. The intermediate frequency is tapped off at the junction between the capacitors and the diode ring.
摘要翻译：公开了一种利用四脊波导和四极二极管环的双平衡波导混频器。在混频器的下变频器版本中，输入信号被施加到四脊波导的一对相对的脊，并且本地振荡器信号被施加到另一对相对的脊。二极管环通过电容器耦合到一对相对的脊，并且直接连接到另一对相对的脊。中间频率在电容器和二极管环之间的接点被分接。

8. 发明授权

US4672023A Method for planarizing wafers 失效
标题翻译：平面化晶圆的方法
公开(公告)号：US4672023A
公开(公告)日：1987-06-09
申请号：US789947
申请日：1985-10-21
申请人： Charles C. Leung
发明人： Charles C. Leung
IPC分类号： H01L21/027 , H01L21/311 , H01L21/762 , H01L21/312
CPC分类号： H01L21/31138 , H01L21/0274 , H01L21/311 , H01L21/76232
摘要： A method for filling indentations to planarize the surface of a wafer is disclosed. The method includes three steps: (1) coating the wafer surface with a layer of positive photoresist that fills the indentations and covers the surface of the wafer; (2) exposing the layer of photoresist to light or other radiation source of such intensity and duration that the layer of photoresist is exposed down to the surface of the wafer but not into the indentations; and (3) removing the exposed portion of the photoresist by using a developer, resulting in a planarized wafer containing indentations filled with unexposed photoresist. Once the wafer has been planarized by this method, overstructures can be formed over the top of the photoresist filled indentations.
摘要翻译：公开了一种用于填充凹槽以平坦化晶片表面的方法。该方法包括三个步骤：（1）用填充凹陷并覆盖晶片表面的正性光致抗蚀剂层涂覆晶片表面; （2）将光致抗蚀剂层暴露于光或其它辐射源，其强度和持续时间使得该光致抗蚀剂层向下暴露于晶片的表面而不是凹陷; 和（3）通过使用显影剂去除光致抗蚀剂的暴露部分，导致包含填充有未曝光光致抗蚀剂的凹陷的平坦化晶片。一旦通过该方法平坦化了晶片，就可以在光致抗蚀剂填充压痕的顶部上形成过结构。

9. 发明授权

US5215866A Broadband printed spiral 失效
标题翻译：宽带印刷螺旋
公开(公告)号：US5215866A
公开(公告)日：1993-06-01
申请号：US523066
申请日：1990-05-14
申请人： Marshall Maple
发明人： Marshall Maple
IPC分类号： H01F17/00 , H01L27/01 , H05K1/16
CPC分类号： H01F17/0006 , H01L27/016 , H05K1/165 , H05K1/167 , H05K2201/0317 , Y10T29/49099
摘要： A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.
摘要翻译：表现出低Q的薄膜印刷电路电感元件，其中导电螺旋沉积在绝缘基板上，电阻链路连接在螺旋的相邻匝之间。因此阻尼了固有共振。

10. 发明授权

US5045731A Ultraminiature 180 degree phase shifter 失效
标题翻译：超小型180度移相器
公开(公告)号：US5045731A
公开(公告)日：1991-09-03
申请号：US427787
申请日：1989-10-27
申请人： Alfred N. Riddle
发明人： Alfred N. Riddle
IPC分类号： H03H11/18
CPC分类号： H03H11/18
摘要： A 180 degree ultraminiature phase shifter. Only two switching devices and very few passive circuit elements are required, thus allowing an extremely small and low loss device to be fabricated. When power is applied to switching devices, a low pass pi section low pass filter is realized which provides +90 degrees of phase shift. When power is absent from the switching devices, a T section high pass filter is realized which provides -90 degrees of phase shift.
摘要翻译： 180度超小型移相器。只需要两个开关器件和非常少的无源电路元件，从而允许制造极小的和低损耗的器件。当对开关器件施加电力时，实现了提供+90度相移的低通pi部分低通滤波器。当切换装置没有电源时，实现了提供-90度相移的T型高通滤波器。

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