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1. 发明授权

US07465644B1 Isolation region bird's beak suppression 有权
标题翻译：隔离区鸟的喙抑制
公开(公告)号：US07465644B1
公开(公告)日：2008-12-16
申请号：US11258209
申请日：2005-10-26
申请人： Simon S. Chan , Weidong Qian , Scott Bell , Phillip Jones , Allison Holbrook
发明人： Simon S. Chan , Weidong Qian , Scott Bell , Phillip Jones , Allison Holbrook
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L21/76202
摘要： A structure for electrically isolating semiconductor devices includes a semiconducting layer and a layer of aluminum oxide formed in a pattern over the semiconducting layer, where the pattern exposes a portion of the semiconducting layer. The structure further includes an electrical isolation region formed in the exposed portion of the semiconducting layer, where the isolation region does not substantially encroach a region beneath the layer of aluminum oxide.
摘要翻译：用于电绝缘半导体器件的结构包括半导体层和在半导体层上以图案形成的氧化铝层，其中图案暴露半导体层的一部分。该结构还包括形成在半导体层的暴露部分中的电隔离区域，其中隔离区域基本上不侵蚀氧化铝层下面的区域。

2. 发明申请

US20080157160A1 LOCAL INTERCONNECT HAVING INCREASED MISALIGNMENT TOLERANCE 有权
标题翻译：本地互连具有增加的偏差约束
公开(公告)号：US20080157160A1
公开(公告)日：2008-07-03
申请号：US11616544
申请日：2006-12-27
申请人： Simon S. Chan
发明人： Simon S. Chan
IPC分类号： H01L29/788 , H01L21/336 , H01L21/4763
CPC分类号： H01L27/11568 , H01L21/76895 , H01L21/76897 , H01L23/485 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first interlayer dielectric is formed between the pair of source select transistors. A mask layer is deposited over the pair of source select transistors and the inter-layer dielectric, where the mask layer defines a local interconnect area between the pair of source select transistors having a width less than a distance between the pair of source select transistors. The semiconductor memory device is etched to remove a portion of the first inter-layer dielectric in the local interconnect area, thereby exposing the source region. A metal contact is formed in the local interconnect area.
摘要翻译：提供一种用于在半导体存储器件中形成互连的方法。该方法包括在衬底上形成一对源极选择晶体管。源区域形成在一对源极选择晶体管之间的衬底中。在一对源极选择晶体管之间形成第一层间电介质。掩模层沉积在一对源极选择晶体管和层间电介质上，其中掩模层限定了一对源极选择晶体管之间的局部互连区域，其宽度小于一对源选择晶体管之间的距离。蚀刻半导体存储器件以去除局部互连区域中的第一层间电介质的一部分，从而暴露源极区域。在局部互连区域中形成金属接触。

3. 发明授权

US07381620B1 Oxygen elimination for device processing 有权
标题翻译：设备处理消除氧气
公开(公告)号：US07381620B1
公开(公告)日：2008-06-03
申请号：US11371023
申请日：2006-03-09
申请人： Boon-Yong Ang , Hidehiko Shiraiwa , Simon S. Chan , Harpreet K. Sachar , Mark Randolph
发明人： Boon-Yong Ang , Hidehiko Shiraiwa , Simon S. Chan , Harpreet K. Sachar , Mark Randolph
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/3144 , H01L21/3162 , H01L27/11568
摘要： A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method further includes forming remaining portions of the semiconductor device in the processing chamber without the presence of oxygen.
摘要翻译：一种方法包括在包含氧的处理室中形成半导体器件的至少一部分，并从处理室中去除基本上所有的氧。该方法还包括在处理室内形成半导体器件的剩余部分而不存在氧气。

4. 发明授权

US07122465B1 Method for achieving increased control over interconnect line thickness across a wafer and between wafers 有权
标题翻译：用于实现跨晶片和晶片之间的互连线厚度的增加的控制的方法
公开(公告)号：US07122465B1
公开(公告)日：2006-10-17
申请号：US11003208
申请日：2004-12-02
申请人： Boon-Yong Ang , Cinti Xiaohua Chen , Simon S. Chan , Inkuk Kang
发明人： Boon-Yong Ang , Cinti Xiaohua Chen , Simon S. Chan , Inkuk Kang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76816 , H01L21/3212 , H01L21/7684
摘要： According to one exemplary embodiment, a method comprises a step of etching a trench in an ILD layer, said trench having sidewalls and a bottom surface. The method further comprises determining a height of the sidewalls of the trench. The method further comprises filling the trench with interconnect metal such the interconnect metal extends above the trench. According to this exemplary embodiment, the method further comprises performing a CMP process to remove a portion of the interconnect metal. In the present invention, the height of the sidewalls of the trench is utilized to control an amount of polishing performed in the CMP process. The remaining portion of interconnect metal in the trench forms an interconnect line, where the thickness of the interconnect line is controlled by utilizing the height of the sidewalls of the trench to control the amount of polishing in the CMP process.
摘要翻译：根据一个示例性实施例，一种方法包括蚀刻ILD层中的沟槽的步骤，所述沟槽具有侧壁和底表面。该方法还包括确定沟槽的侧壁的高度。该方法还包括用互连金属填充沟槽，使得互连金属在沟槽之上延伸。根据该示例性实施例，该方法还包括执行CMP处理以去除互连金属的一部分。在本发明中，利用沟槽侧壁的高度来控制在CMP工艺中执行的抛光量。沟槽中的互连金属的剩余部分形成互连线，其中通过利用沟槽的侧壁的高度来控制互连线的厚度以控制CMP工艺中的抛光量。

5. 发明授权

US06967160B1 Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness 有权
标题翻译：制造具有降低界面粗糙度的硅化镍的半导体器件的方法
公开(公告)号：US06967160B1
公开(公告)日：2005-11-22
申请号：US11042194
申请日：2005-01-26
申请人： Eric Paton , Paul Raymond Besser , Simon S. Chan , Fred Hause
发明人： Eric Paton , Paul Raymond Besser , Simon S. Chan , Fred Hause
IPC分类号： H01L21/28 , H01L21/00 , H01L21/265 , H01L21/285 , H01L21/336 , H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40 , H01L29/78 , H01L29/786
CPC分类号： H01L21/28518 , H01L21/26506 , H01L21/28052 , H01L29/665 , H01L29/6659
摘要： Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.
摘要翻译：通过在下面的硅和硅化镍层之间形成扩散转换层来实现具有显着降低的界面粗糙度的硅化镍形成。实施例包括将氮离子注入到衬底和栅电极中，沉积钛或钽的薄层，沉积镍层，然后加热以形成在下硅和硅化镍层之间的界面处含有氮的扩散调制层。

6. 发明授权

US06867130B1 Enhanced silicidation of polysilicon gate electrodes 有权
标题翻译：增强多晶硅栅电极的硅化
公开(公告)号：US06867130B1
公开(公告)日：2005-03-15
申请号：US10445936
申请日：2003-05-28
申请人： Olov B. Karlsson , Simon S. Chan , William G. En , Mark W. Michael
发明人： Olov B. Karlsson , Simon S. Chan , William G. En , Mark W. Michael
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/44 , H01L21/4763 , H01L29/423 , H01L29/78
CPC分类号： H01L29/66507 , H01L21/28114 , H01L21/28518 , H01L29/42376 , H01L29/6659 , H01L29/7833
摘要： Semiconductor devices exhibiting reduced gate resistance and reduced silicide spiking in source/drain regions are fabricated by forming thin metal silicide layers on the gate electrode and source/drain regions and then selectively resilicidizing the gate electrodes. Embodiments include forming the thin metal silicide layers on the polysilicon gate electrodes and source/drain regions, depositing a dielectric gap filling layer, as by high density plasma deposition, etching back to selectively expose the silicidized polysilicon gate electrodes and resilicidizing the polysilicon gate electrodes to increase the thickness of the metal silicide layers thereon. Embodiments further include resilicidizing the polysilicon gate electrodes including a portion of the upper side surfaces forming mushroom shaped metal silicide layers.
摘要翻译：通过在栅极电极和源极/漏极区域上形成薄金属硅化物层，然后选择性地使栅电极重新硅化，来制造在源极/漏极区域中显示出降低的栅极电阻和减少的硅化物尖峰的半导体器件。实施例包括在多晶硅栅极电极和源极/漏极区域上形成薄金属硅化物层，通过高密度等离子体沉积沉积介电间隙填充层，回蚀刻以选择性地暴露硅化多晶硅栅电极并使多晶硅栅电极重新硅化增加其上的金属硅化物层的厚度。实施例还包括重新硅化多晶硅栅电极，其包括形成蘑菇状金属硅化物层的上侧表面的一部分。

7. 发明授权

US06689688B2 Method and device using silicide contacts for semiconductor processing 失效
标题翻译：使用半导体处理硅化物触点的方法和器件
公开(公告)号：US06689688B2
公开(公告)日：2004-02-10
申请号：US10180858
申请日：2002-06-25
申请人： Paul Raymond Besser , Simon S. Chan , David E. Brown , Eric Paton
发明人： Paul Raymond Besser , Simon S. Chan , David E. Brown , Eric Paton
IPC分类号： H01L2144
CPC分类号： H01L21/28518
摘要： A method for forming silicide contacts includes forming a layer on silicon-containing active device regions such as source, drain, and gate regions. The layer contains a metal that is capable of forming one or more metal silicides and a material that is soluble in a first metal silicide but not soluble in a second metal silicide, or is more soluble in the first metal silicide than in the second metal silicide. The layer may be formed by vapor deposition methods such as physical vapor deposition, chemical vapor deposition, evaporation, laser ablation, or other deposition method. A method for forming silicide contacts includes forming a metal layer, then implanting the metal layer and/or underlying silicon layer with a material such as that described above. The material may be implanted in the silicon layer prior to formation of the metal layer. Contacts formed include a first metal silicide and a material that is more soluble in a first metal silicide than in a second metal silicide. The contacts may be part of a semiconductor device including a substrate, active region containing silicon, and silicide contacts disposed over the active region and capable of electrically coupling the active region to other regions such as metallization lines.
摘要翻译：用于形成硅化物接触的方法包括在诸如源极，漏极和栅极区域的含硅有源器件区域上形成层。该层包含能够形成一种或多种金属硅化物的金属和可溶于第一金属硅化物但不溶于第二金属硅化物的材料，或者比第二金属硅化物更可溶于第一金属硅化物。该层可以通过诸如物理气相沉积，化学气相沉积，蒸发，激光烧蚀或其它沉积方法之类的气相沉积方法形成。形成硅化物接触的方法包括形成金属层，然后用如上所述的材料注入金属层和/或下层硅层。在形成金属层之前，材料可以被植入到硅层中。形成的触点包括第一金属硅化物和在第一金属硅化物中比在第二金属硅化物中更可溶的材料。触点可以是半导体器件的一部分，其包括衬底，含硅的有源区和设置在有源区上的硅化物触点，并且能够将有源区电耦合到诸如金属化线的其它区域。

8. 发明授权

US06258683B1 Local interconnection arrangement with reduced junction leakage and method of forming same 有权
标题翻译：具有减少结漏的局部互连布置及其形成方法
公开(公告)号：US06258683B1
公开(公告)日：2001-07-10
申请号：US09477741
申请日：2000-01-05
申请人： Paul Besser , Simon S. Chan , Yowjuang Bill Liu
发明人： Paul Besser , Simon S. Chan , Yowjuang Bill Liu
IPC分类号： H01L21336
CPC分类号： H01L23/485 , H01L21/76895 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： A method and arrangement for forming a local interconnect without etching completely through a junction and causing device shorts introduces an additional ion implantation step following the etching of the local interconnect opening into the substrate. The additional ion implantation step into the active region ensures that the depth of the junction is below the depth reached by the local interconnect opening and the substrate.
摘要翻译：用于形成局部互连而不是完全蚀刻通过结而导致器件短路的局部互连的方法和装置在蚀刻到衬底中的局部互连开口之后引入额外的离子注入步骤。进入有源区域的附加离子注入步骤确保结的深度低于局部互连开口和衬底达到的深度。

9. 发明授权

US06251776B1 Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers 有权
标题翻译：等离子体处理以减少应力腐蚀导致图案化金属层的排空
公开(公告)号：US06251776B1
公开(公告)日：2001-06-26
申请号：US09283754
申请日：1999-04-02
申请人： Minh Van Ngo , Simon S. Chan , Anne E. Sanderfer , King Wai Kelwin Ko
发明人： Minh Van Ngo , Simon S. Chan , Anne E. Sanderfer , King Wai Kelwin Ko
IPC分类号： H01L21441
CPC分类号： H01L21/02071 , H01L21/02052 , H01L21/02054 , H01L21/76838
摘要： Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a plasma containing ammonia or ammonia and oxygen at a temperature of at least about 400° C. and gap filling with a dielectric material, e.g. HDP oxide by HDP CVD.
摘要翻译：通过在间隙填充之前去除蚀刻残留物来避免或显着减少图形化金属层的应力腐蚀引起的空隙。实施例包括使用氟和/或氯化学，湿洗，用至少约400℃的温度下含有氨或氨和等离子体的等离子体进行蚀刻Al或Al合金层，以及填充介电材料的间隙。 HDP CVD的HDP氧化物。

10. 发明授权

US06171919B2 MOS Transistor formation process including post-spacer etch surface treatment for improved silicide formation 有权
标题翻译： MOS晶体管形成工艺包括用于改善硅化物形成的后间隔蚀刻表面处理
公开(公告)号：US06171919B2
公开(公告)日：2001-01-09
申请号：US09361155
申请日：1999-07-27
申请人： Paul R. Besser , Minh Van Ngo , Simon S. Chan , Angela T. Hui
发明人： Paul R. Besser , Minh Van Ngo , Simon S. Chan , Angela T. Hui
IPC分类号： H01L21336
CPC分类号： H01L29/665
摘要： Sub-micron dimensioned, ultra-shallow junction MOS and/or CMOS transistor devices having reduced or minimal junction leakage are formed by a salicide process wherein carbonaceous residue on silicon substrate surfaces resulting from reactive plasma etching for sidewall spacer formation is removed prior to salicide processing. Embodiments include removing carbonaceous residues by performing a hydrogen ion plasma treatment.
摘要翻译：通过自对准硅化物工艺形成具有减小的或最小的结泄漏的亚微米尺寸的超浅结MOS和/或CMOS晶体管器件，其中在自对准硅化物处理之前除去由用于侧壁间隔物形成的反应等离子体蚀刻而导致的硅衬底表面上的碳质残渣。实施例包括通过进行氢离子等离子体处理来除去碳质残渣。

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