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    • 1. 发明授权
    • Phase compensated switched attenuation pad
    • 相位补偿开关衰减垫
    • US06504449B2
    • 2003-01-07
    • US09778578
    • 2001-02-07
    • Cornelius ConstantineRichard G. Barber
    • Cornelius ConstantineRichard G. Barber
    • H03H1124
    • H03H11/245
    • A phase compensated switched attenuation device 6 is provided for attenuating high frequency signals while maintaining an insertion loss of less than 1 dB up to 3 GHz. A single GaAs FET 12 is coupled between input port 8 and output port 9 in parallel with a 20 dB pad 10 for switching the device 6 between a through state and an attenuation state. First and second isolation FETs 14 and 16 are coupled between the GaAs FET 12 and pad terminals 18 and 19 to isolate the GaAs FET 12, decrease return loss when the GaAs FET 12 is on, and increase isolation of the GaAs FET 12 from the pad 10 when the GaAs FET 12 is on. A resistor 24 or a series combination of a resistor 24 and capacitor 26 can be coupled to the pad terminals 18 and 19 in parallel with the pad 10 to improve return loss when the GaAs FET 12 is on. Resistors 21, 22, and 23 are also provided to reduce distortion, coupling gates of the FETs 12, 14, and 16 to a plurality of voltage references V1 and V2.
    • 提供相位补偿开关衰减装置6用于衰减高频信号,同时保持小于1GHz至3GHz的插入损耗。 单个GaAs FET 12与输入端口8和输出端口9并联连接到20dB焊盘10,用于在通过状态和衰减状态之间切换装置6。 第一和第二隔离FET 14和16耦合在GaAs FET 12和焊盘端子18和19之间,以隔离GaAs FET 12,当GaAs FET 12导通时降低回波损耗,并增加GaAs FET 12与焊盘的隔离 当GaAs FET 12接通时, 电阻器24或电阻器24和电容器26的串联组合可以与焊盘10并联连接到焊盘端子18和19,以在GaAs FET 12接通时提高回波损耗。 还提供电阻器21,22和23以减小失真,将FET 12,14和16的栅极耦合到多个电压基准V1和V2。