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1. 发明授权

US06596569B1 Thin film transistors 有权
标题翻译：薄膜晶体管
公开(公告)号：US06596569B1
公开(公告)日：2003-07-22
申请号：US10098201
申请日：2002-03-15
申请人： Zhenan Bao , Peter Kian-Hoon Ho , Yueh-Lin Loo , John A. Rodgers , Takao Someya
发明人： Zhenan Bao , Peter Kian-Hoon Ho , Yueh-Lin Loo , John A. Rodgers , Takao Someya
IPC分类号： H01L2100
CPC分类号： H01L51/0545 , B82Y10/00 , H01L21/2007 , H01L21/76251 , H01L27/283 , H01L51/0024 , H01L51/0036 , H01L51/0052 , H01L51/0053 , H01L51/0078 , H01L51/0097 , H01L51/0512 , H01L51/0541
摘要： The specification describes a lamination method for thin film transistor TFT devices wherein each ply of the laminate is a polymer and each contains a portion of the TFT or the interconnection circuit. The plies are laminated together using a solid adhesive polymer layer on the surface of one or both of the plies. The solid adhesive polymer layer has a low elastic modulus that provides effective encapsulation of the TFT, and laminates the plies without high heat or pressure.
摘要翻译：该说明书描述了薄膜晶体管TFT器件的层叠方法，其中层叠体的每个层是聚合物，并且每个层叠有TFT或互连电路的一部分。使用在一层或两层的表面上的固体粘合剂聚合物层将层层压在一起。固体粘合剂聚合物层具有低的弹性模量，其提供TFT的有效封装，并且在没有高热或压力的情况下层压层。

2. 发明授权

US06770549B2 Forming patterned thin film metal layers 有权
标题翻译：形成图案化的薄膜金属层
公开(公告)号：US06770549B2
公开(公告)日：2004-08-03
申请号：US10141362
申请日：2002-05-08
申请人： Zhenan Bao , Peter Kian-Hoon Ho , Takao Someya
发明人： Zhenan Bao , Peter Kian-Hoon Ho , Takao Someya
IPC分类号： H01L2120
CPC分类号： H01L21/76838 , H01L21/288 , H01L51/0021 , H01L51/0024 , H01L51/0097 , H01L51/0512
摘要： The specification describes a pattern transfer technique for forming patterns of thin films of high resolution over large areas. It involves forming a pattern layer on a transfer substrate, patterning the pattern layer while on the transfer substrate, then contacting the transfer substrate with the receiving substrate. The surface of the receiving substrate is treated to activate the surface thereby improving adhesion of the transfer pattern to the receiving substrate. The activation treatment involves forming a layer of metal particles on the surface of the receiving substrate. The pattern layer is preferably of the same metal, or a similar metal or alloy, and is transferred from the transfer substrate to the receiving substrate by metallurgical bonding. The method of the invention is particularly useful for printing metal conductor patterns (metalization), and device features, on flexible polymer substrates in, for example, thin film transistor (TFT) technology.
摘要翻译：本说明书描述了用于在大面积上形成高分辨率薄膜图案的图案转印技术。它涉及在转移基板上形成图案层，在转印衬底上图案化图案层，然后使转印衬底与接收衬底接触。处理接收基板的表面以激活表面，从而改善转印图案对接收基板的粘附。活化处理包括在接收基材的表面上形成一层金属颗粒。图案层优选为相同的金属或类似的金属或合金，并且通过冶金结合从转印基板转移到接收基板。本发明的方法特别适用于印刷金属导体图案（金属化）和在诸如薄膜晶体管（TFT）技术的柔性聚合物基板上的器件特征。

3. 发明授权

US06743988B2 Optically controlled switches 失效
标题翻译：光控开关
公开(公告)号：US06743988B2
公开(公告)日：2004-06-01
申请号：US09864125
申请日：2001-05-23
申请人： Zhenan Bao , David John Bishop , Robert Albert Boie , Dustin W. Carr , Edwin Arthur Chandross , Peter Kian-Hoon Ho
发明人： Zhenan Bao , David John Bishop , Robert Albert Boie , Dustin W. Carr , Edwin Arthur Chandross , Peter Kian-Hoon Ho
IPC分类号： B81B702
CPC分类号： H01L51/42 , Y02E10/549 , Y10T307/773
摘要： An optically controlled switch includes first and second electrodes, a channel extending between the electrodes, and a light source positioned to illuminate the channel. The light source produces a wavelength capable of changing the material's conductivity. The channel includes a photosensitive organic material and is configured to operate as a light controlled switch.
摘要翻译：光控开关包括第一和第二电极，在电极之间延伸的通道和定位成照亮通道的光源。光源产生能够改变材料导电性的波长。该通道包括光敏有机材料并被配置为作为光控开关操作。

4. 发明授权

US07884355B2 Polymer transistor 有权
标题翻译：聚合物晶体管
公开(公告)号：US07884355B2
公开(公告)日：2011-02-08
申请号：US10556404
申请日：2004-05-12
申请人： Lay-Lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
发明人： Lay-Lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L35/24
CPC分类号： H01L51/0002 , C07C247/16 , G03C1/695 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/052
摘要： A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.
摘要翻译：一种包括半导体层的晶体管; 以及包含绝缘聚合物的栅极电介质层，其特征在于，所述绝缘聚合物是交联的，并且包含具有低内聚能量密度和一个或多个交联基团的一个或多个单元，并且所述绝缘聚合物基本上不包括残余的-OH离去基团。

5. 发明授权

US07638793B2 N-channel transistor 有权
标题翻译： N沟道晶体管
公开(公告)号：US07638793B2
公开(公告)日：2009-12-29
申请号：US10586149
申请日：2005-01-17
申请人： Lay-Lay Chua , Peter Kian-Hoon Ho , Richard Henry Friend
发明人： Lay-Lay Chua , Peter Kian-Hoon Ho , Richard Henry Friend
IPC分类号： H01L29/08
CPC分类号： H01L51/5296 , B82Y10/00 , H01L21/02118 , H01L21/02126 , H01L21/3122 , H01L51/0022 , H01L51/0023 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0046 , H01L51/0508 , H01L51/0516 , H01L51/0545 , H01L51/52 , H01L51/5203 , H01L51/56 , H05B33/08
摘要： An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018 cm−3, where a trapping group is a group having (i) an electron affinity EAX greater than or equal to EAsemicond and/or (ii) a reactive electron affinity EArxn greater than or equal to (EAsemicond.−2 eV).
摘要翻译： n沟道或双极场效应晶体管，其包括具有电子亲和力的有机半导体层; 以及形成与半导体层的界面的有机栅极介电层; 其特征在于栅极电介质层中俘获基团的堆积浓度小于1018cm-3，其中俘获基团是具有（i）电子亲和力EAX大于或等于EAsemicond的基团和/或（ii）反应性电子亲和力EArxn大于或等于（EAsemicond.-2 eV）。

6. 发明申请

US20120154025A1 DUAL-GATE TRANSISTORS 审中-公开
标题翻译：双门极晶体管
公开(公告)号：US20120154025A1
公开(公告)日：2012-06-21
申请号：US13345038
申请日：2012-01-06
申请人： Lay-Lay CHUA , Peter Kian-Hoon Ho , Richard Henry Friend
发明人： Lay-Lay CHUA , Peter Kian-Hoon Ho , Richard Henry Friend
IPC分类号： G05F3/02
CPC分类号： H01L51/0508 , H01L27/283 , H01L51/0512 , H01L51/0554
摘要： A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.
摘要翻译：一种场效应晶体管器件，包括：源电极; 漏电极; 半导体区域，包括有机半导体材料，并且限定所述源电极和所述漏电极之间的所述器件的沟道; 第一栅极结构，包括位于第一栅极电极和半导体区域之间的第一栅极电极和第一电介质区域; 以及第二栅极结构，包括位于所述第二栅极电极和所述半导体区域之间的第二栅电极和第二电介质区域; 由此沟道中的半导体区域的电导可以受单独施加的电位或第一栅极电极和第二栅极电极的影响。

7. 发明授权

US06835803B1 Method for doping a polymer 有权
标题翻译：掺杂聚合物的方法
公开(公告)号：US06835803B1
公开(公告)日：2004-12-28
申请号：US09958257
申请日：2002-02-19
申请人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
发明人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
IPC分类号： C08G6100
CPC分类号： C08L65/00 , B82Y20/00 , C08K5/5317 , G02B1/10 , G02B6/1221 , G02B2006/12069 , G02B2006/12104 , H01B1/12 , H01L51/002 , H01L51/0026 , H01L51/0038 , H01L51/5012 , H01L51/5052 , H01L51/5262 , H01L51/5265 , H01S3/168 , H01S5/36 , C08L2666/06
摘要： A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.
摘要翻译：形成由掺杂剂掺杂的共轭聚合物的方法包括以下步骤：（a）将包含掺杂剂部分的掺杂剂加入到含有共轭聚合物或其前体和任选的第二聚合物的溶液中，掺杂剂部分能够与共轭聚合物，其前体或第二聚合物键合; （b）允许掺杂剂部分与共轭聚合物，其前体或第二聚合物键合以进行共轭聚合物的掺杂，其中在步骤（a）中添加的掺杂剂的量小于形成完全的量所需的量掺杂共轭聚合物。

8. 发明授权

US08748534B2 Method for doping a polymer 有权
标题翻译：掺杂聚合物的方法
公开(公告)号：US08748534B2
公开(公告)日：2014-06-10
申请号：US11869662
申请日：2007-10-09
申请人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
发明人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
IPC分类号： C08G63/88 , C08G63/91 , C08G61/00
CPC分类号： C08L65/00 , B82Y20/00 , C08K5/5317 , G02B1/10 , G02B6/1221 , G02B2006/12069 , G02B2006/12104 , H01B1/12 , H01L51/002 , H01L51/0026 , H01L51/0038 , H01L51/5012 , H01L51/5052 , H01L51/5262 , H01L51/5265 , H01S3/168 , H01S5/36 , C08L2666/06
摘要： A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.
摘要翻译：形成由掺杂剂掺杂的共轭聚合物的方法包括以下步骤：（a）将包含掺杂剂部分的掺杂剂加入到含有共轭聚合物或其前体和任选的第二聚合物的溶液中，掺杂剂部分能够与共轭聚合物，其前体或第二聚合物键合; （b）允许掺杂剂部分与共轭聚合物，其前体或第二聚合物键合以进行共轭聚合物的掺杂，其中在步骤（a）中加入的掺杂剂的量小于形成完全的量所需的量掺杂共轭聚合物。

9. 发明申请

US20090004402A1 Radiation Crosslinker 有权
标题翻译：辐射交联剂
公开(公告)号：US20090004402A1
公开(公告)日：2009-01-01
申请号：US11994565
申请日：2006-07-04
申请人： Peter Kian-Hoon Ho , Lay-Lay Chua , Siong-Hee Khong , Sankaran Sivaramakrishnan , Perq-Jon Chia
发明人： Peter Kian-Hoon Ho , Lay-Lay Chua , Siong-Hee Khong , Sankaran Sivaramakrishnan , Perq-Jon Chia
IPC分类号： C08J7/04 , C07C247/16 , C08F273/00 , C08F277/00
CPC分类号： C07C247/16 , C07C247/18 , G03F7/038
摘要： There is provided a class of crosslinking compound, said compound comprising (i) one or more fluorinated aromatic group; and (ii) one or more ionisable group, wherein the crosslinking compound is soluble in at least one polar solvent. Methods of preparing the crosslinking compounds are also disclosed. There is further provided devices obtainable from the methods of preparing the crosslinking compounds.
摘要翻译：提供一类交联化合物，所述化合物包含（i）一种或多种氟化芳族基团; 和（ii）一种或多种可离子化基团，其中所述交联化合物可溶于至少一种极性溶剂。还公开了制备交联化合物的方法。进一步提供可从制备交联化合物的方法获得的装置。

10. 发明申请

US20080146744A1 Method For Doping A Polymer 有权
标题翻译：掺杂聚合物的方法
公开(公告)号：US20080146744A1
公开(公告)日：2008-06-19
申请号：US11869662
申请日：2007-10-09
申请人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
发明人： Peter Kian-Hoon Ho , Ji-Seon Kim , Richard Henry Friend
IPC分类号： C08F8/00
CPC分类号： C08L65/00 , B82Y20/00 , C08K5/5317 , G02B1/10 , G02B6/1221 , G02B2006/12069 , G02B2006/12104 , H01B1/12 , H01L51/002 , H01L51/0026 , H01L51/0038 , H01L51/5012 , H01L51/5052 , H01L51/5262 , H01L51/5265 , H01S3/168 , H01S5/36 , C08L2666/06
摘要： A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.
摘要翻译：形成由掺杂剂掺杂的共轭聚合物的方法包括以下步骤：（a）将包含掺杂剂部分的掺杂剂加入到含有共轭聚合物或其前体和任选的第二聚合物的溶液中，掺杂剂部分能够与共轭聚合物，其前体或第二聚合物键合; （b）允许掺杂剂部分与共轭聚合物，其前体或第二聚合物键合以进行共轭聚合物的掺杂，其中在步骤（a）中添加的掺杂剂的量小于形成完全的量所需的量掺杂共轭聚合物。

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