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    • 5. 发明申请
    • Apparatus and process for bulk wet etch with leakage protection
    • 用于具有漏电保护的散装湿蚀刻的装置和工艺
    • US20050118822A1
    • 2005-06-02
    • US11032800
    • 2005-01-11
    • Zhe WangQingxin ZhangPang FooHan Feng
    • Zhe WangQingxin ZhangPang FooHan Feng
    • H01L21/00H01L21/306H01L21/302H01L21/461
    • H01L21/67086H01L21/30608H01L21/6708
    • When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.
    • 当使用诸如KOH的热碱性蚀刻剂时,其中各种装置和/或电路所在的晶片正面必须与与蚀刻剂的任何接触隔离。 这是通过使用被待蚀刻的晶片彼此分离的两个室来实现的。 一个室中的蚀刻溶液与晶片的背面接触,而另一个室中的去离子水接触前表面。 腔室中的相对液体压力被布置为在前表面的腔室中略高,使得蚀刻剂不会通过针孔从背表面泄漏到前表面。 作为进一步的预防措施,用于检测蚀刻剂的监测器位于去离子水中,使得如果需要,可以在不可修复的损伤完成之前终止蚀刻。
    • 8. 发明授权
    • CMOS compatible silicon differential condenser microphone and method for manufacturing the same
    • CMOS兼容硅差动电容麦克风及其制造方法
    • US08860154B2
    • 2014-10-14
    • US13581882
    • 2011-03-11
    • Zhe Wang
    • Zhe Wang
    • H01L29/84G01P15/08H04R23/00G01L9/00B81B3/00H04R19/04B81C1/00
    • B81B3/0078B81B2207/015B81C1/00246H04R19/005H04R19/04
    • The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same. Said microphone comprises a silicon substrate, wherein a CMOS circuitry is accommodated thereon; a first rigid conductive perforated backplate supported on the silicon substrate with an insulating layer inserted therebetween; a second rigid perforated backplate formed above the first backplate, including CMOS passivation layers and a metal layer sandwiched between the CMOS passivation layers as an electrode plate of the second plate, wherein an air gap, with a spacer forming its boundary, is provided between the opposite perforated areas of the first backplate and the second backplate; a compliant diaphragm provided between the first backplate and the second backplate, wherein a back hole is formed to be open in the silicon substrate underneath the first backplate so as to allow sound pass through, and the diaphragm and the first backplate form a first variable condenser, the diaphragm and the second backplate form a second variable condenser, and the first variable condenser and the second variable condenser form differential condensers.
    • 本发明提供一种CMOS兼容的硅差分电容麦克风及其制造方法。 所述麦克风包括硅衬底,其中容纳CMOS电路; 支撑在硅衬底上的第一刚性导电多孔背板,绝缘层插入其间; 形成在第一背板上方的第二刚性多孔背板,包括CMOS钝化层和夹在CMOS钝化层之间的金属层作为第二板的电极板,其中具有形成其边界的间隔件的气隙设置在 第一背板和第二背板的相对穿孔区域; 设置在所述第一背板和所述第二背板之间的柔性隔膜,其中形成在所述第一背板下方的所述硅基板中开口的后孔,以允许声音通过,并且所述隔膜和所述第一背板形成第一可变冷凝器 ,隔膜和第二背板形成第二可变冷凝器,第一可变冷凝器和第二可变冷凝器形成差动冷凝器。
    • 9. 发明申请
    • SILICON BASED MEMS MICROPHONE, A SYSTEM AND A PACKAGE WITH THE SAME
    • 基于硅的MEMS麦克风,一个系统和一个包装
    • US20140299948A1
    • 2014-10-09
    • US13582141
    • 2011-12-29
    • Zhe WangMengjin Cai
    • Zhe WangMengjin Cai
    • H04R1/02H04R7/04
    • H04R1/02B81B7/0061B81B2201/0257H01L2924/1461H04R1/086H04R7/04H04R19/005H04R19/04H04R2201/003H04R2201/02H04R2207/00
    • The present invention relates to a silicon based MEMS microphone, comprising a silicon substrate and an acoustic sensing part supported on the silicon substrate, wherein a mesh-structured back hole is formed in the substrate and aligned with the acoustic sensing part, the mesh-structured back hole includes a plurality of mesh beams which are interconnected with each other and supported on the side wall of the mesh-structure back hole, the plurality of mesh beams and the side wall define a plurality of mesh holes which all have a tapered profile and merge into one hole in the vicinity of the acoustic sensing part at the top side of the silicon substrate. The mesh-structured back hole can help to streamline the air pressure pulse caused, for example, in a drop test and thus reduce the impact on the acoustic sensing part of the microphone, and also serve as a protection filter to prevent alien substances such as particles entering the microphone.
    • 本发明涉及一种基于硅的MEMS麦克风,其包括硅衬底和支撑在硅衬底上的声学感测部件,其中在衬底中形成网格结构的后孔并与声学感测部件对准,网状结构 后孔包括彼此互连并支撑在网状结构后孔的侧壁上的多个网眼梁,多个网状梁和侧壁限定多个网孔,其全部具有锥形轮廓, 合并到硅衬底顶部的声学传感部分附近的一个孔中。 网格结构的后孔可以帮助简化例如在跌落测试中引起的空气压力脉冲,从而减少对麦克风的声学传感部分的影响,并且还用作保护过滤器以防止外来物质例如 颗粒进入麦克风。
    • 10. 发明申请
    • AEROBIC OXIDATION OF ALKANES
    • 碱的氧化性氧化
    • US20140061058A1
    • 2014-03-06
    • US13597071
    • 2012-08-28
    • Xiangqun ZengZhe Wang
    • Xiangqun ZengZhe Wang
    • C25B3/02
    • C25B3/02C25B3/00C25B9/08
    • An aerobic method for oxidizing an alkane is disclosed herein. At least a portion of a surface of a platinum working electrode is activated at an interface between the platinum working electrode and an ionic liquid electrolyte (i.e., 1-ethyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-propyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-pentyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-hexyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-heptyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-octyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, 1-nonyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide, and 1-decyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imidem, and combinations thereof). An interface complex is formed at the interface. An alkane gas is supplied to the interface. The alkane adsorbs at or near the interface complex. The alkane gas in the presence of oxygen is supplied to the interface. While the alkane gas in the presence of oxygen is supplied to the interface, a positive electrode potential is applied to the platinum working electrode, which causes a reactive oxygen species formed at the interface to catalyze oxidation of the adsorbed alkane to form a reaction product.
    • 本文公开了一种用于氧化烷烃的好氧方法。 铂工作电极的至少一部分表面在铂工作电极和离子液体电解质(即,1-乙基-1-甲基吡咯烷鎓双(三氟甲基磺酰基)酰亚胺,1-丙基-1-甲基吡咯烷鎓 (三氟甲基磺酰基)酰亚胺,双(三氟甲基磺酰基)酰亚胺,1-戊基-1-甲基吡咯烷鎓双(三氟甲基磺酰基)酰亚胺,1-己基-1-甲基吡咯烷鎓双(三氟甲基磺酰基)酰亚胺,1-庚基-1 (三氟甲基磺酰基)酰亚胺,1-辛基-1-甲基吡咯烷鎓双(三氟甲基磺酰基)酰亚胺,1-壬基-1-甲基吡咯烷鎓双(三氟甲基磺酰基)酰亚胺和1-癸基-1-甲基吡咯烷鎓双(三氟甲磺酰基)亚胺,以及组合 )。 在接口上形成接口复合体。 烷烃气体被供应到界面。 烷烃在界面络合物处或附近吸附。 在存在氧气的情况下将烷烃气体供应给界面。 当在存在氧气的情况下将烷烃气体供应到界面时,将正极电位施加到铂工作电极,这导致在界面处形成的活性氧物质催化吸附的烷烃的氧化以形成反应产物。