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1. 发明授权

US06495275B2 Multi-layered thin-film functional device and magnetoresistance effect element 有权
标题翻译：多层薄膜功能元件和磁阻效应元件
公开(公告)号：US06495275B2
公开(公告)日：2002-12-17
申请号：US09927379
申请日：2001-08-13
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B5127
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要翻译：磁阻效应元件包括自由层，被钉扎层和介于自由层和钉扎层之间的非磁性中间层。另外，金属阻挡层设置成与第一磁性层相邻。位于金属阻挡层附近的电子反射层含有选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种。

2. 发明授权

US06303218B1 Multi-layered thin-film functional device and magnetoresistance effect element 有权
标题翻译：多层薄膜功能元件和磁阻效应元件
公开(公告)号：US06303218B1
公开(公告)日：2001-10-16
申请号：US09273496
申请日：1999-03-22
申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
IPC分类号： G11B566
CPC分类号： H01F10/3272 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3259 , H01F10/3268 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193 , Y10T428/26 , Y10T428/265
摘要： According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.
摘要翻译：根据本发明的另一方面，一种具有磁阻效应膜的磁电阻效应元件，其包括作为其中的膜之一的晶体生长控制层，其特征在于，沿着覆盖所述晶体生长控制层的膜之间的边界的粗糙度小于提供沿着所述晶体生长控制层下面的膜之间的边界的粗糙度。根据本发明的另一方面，一种磁阻效应元件，包括置于所述自由层和钉扎层之间的自由层，被钉扎层和非磁性中间层，其特征在于还包括与所述第一磁体相邻设置的金属阻挡层还提供了与所述金属阻挡层相邻并且包含选自氧化物，氮化物，碳化物，氟化物，氯化物，硫化物和硼化物中的至少一种的电子反射层。

3. 发明授权

US6052262A Magneto-resistance effect element and magnetic head 失效
标题翻译：磁阻效应元件和磁头
公开(公告)号：US6052262A
公开(公告)日：2000-04-18
申请号：US38848
申请日：1998-03-12
申请人： Yuzo Kamiguchi , Akiko Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , H01L43/08 , G11B2005/3996 , G11B5/012
摘要： A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.
摘要翻译：一种磁电阻效应元件，包括自旋阀膜，该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和非磁性层。在第一和第二磁性层中，在至少一个磁性层中，构成磁性层的晶粒的紧密堆积面各向同性地分散。通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下，通过使构成下层的晶粒的各向同性紧密堆积面分散，可以得到这样的磁性层。根据包含这种自旋阀膜的磁阻效应元件，在保持大的MR变化率的同时，例如，磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。此外，可以提供优异的软磁性。

4. 发明授权

US5949622A Magnetoresistance effect element 失效
公开(公告)号：US5949622A
公开(公告)日：1999-09-07
申请号：US848262
申请日：1997-04-29
申请人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/00 , G11B5/3967
摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

5. 发明授权

US6111729A Magnetoresistance effect element 有权
标题翻译：磁阻效应元件
公开(公告)号：US6111729A
公开(公告)日：2000-08-29
申请号：US313767
申请日：1999-05-18
申请人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/00 , G11B5/3967
摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.
摘要翻译：设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。

6. 发明授权

US06256863B1 Yoke type magnetoresistance head and manufacturing method of the same 失效
标题翻译：轭型磁阻头及其制造方法
公开(公告)号：US06256863B1
公开(公告)日：2001-07-10
申请号：US08815179
申请日：1997-03-11
申请人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
发明人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
IPC分类号： G11B542
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3163 , G11B5/3903 , G11B5/3916 , G11B2005/3996 , Y10T29/49034
摘要： A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.
摘要翻译：在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。此外，至少在头部的操作期间，向磁轭和MR膜施加偏置磁场。该偏置磁场例如由电流引起的磁场提供。或者，在对磁轭进行加热处理的同时施加由电流引起的磁场。磁性各向异性在根据位置不同的方向上被引到磁轭上。这种磁各向异性限制了由磁轭引起的Barkhausen噪声。

7. 发明授权

US06313973B1 Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same 失效
标题翻译：交换耦合膜的叠层磁致伸缩元件，反铁磁膜和铁磁膜以及使用它的磁盘驱动器
公开(公告)号：US06313973B1
公开(公告)日：2001-11-06
申请号：US09343270
申请日：1999-06-30
申请人： Hiromi Fuke , Kazuhiro Saito , Katsuhiko Koui , Hideaki Fukuzawa , Akiko Saito , Hitoshi Iwasaki
发明人： Hiromi Fuke , Kazuhiro Saito , Katsuhiko Koui , Hideaki Fukuzawa , Akiko Saito , Hitoshi Iwasaki
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3263 , H01F10/3268 , H01F10/3272
摘要： A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.
摘要翻译：磁阻元件包括具有下层，反铁磁膜和铁磁膜的交换耦合膜，其按顺序层压，下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属，其具有比反铁磁膜的最近邻原子距离更长。利用这种结构，可以改善交换耦合场并且能够长时间地满足稳定的输出。具有双自旋阀结构的磁阻元件具有磁化调节层，其通过反并联连接层反铁磁连接到被钉扎层，以调节每个磁化调节层的饱和磁化强度和被钉扎层的厚度。此外，磁阻头使用巨磁电阻效应，并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。钉扎层具有一对铁磁层，其具有不同的组成和不同的矫顽力，并且经由连接层彼此反铁磁连接，使得钉扎层的有效交换耦合场为200Oe以上。

8. 发明授权

US07076958B2 Magnetic material 有权
标题翻译：磁性材料
公开(公告)号：US07076958B2
公开(公告)日：2006-07-18
申请号：US10718518
申请日：2003-11-24
申请人： Akiko Saito , Tadahiko Kobayashi , Takao Sawa , Masashi Sahashi
发明人： Akiko Saito , Tadahiko Kobayashi , Takao Sawa , Masashi Sahashi
IPC分类号： F25B21/00 , C09K5/00 , H01F1/04
CPC分类号： H01F1/015 , F25B21/00 , Y02B30/66
摘要： The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
摘要翻译：本发明的磁性制冷用磁性材料的特征在于，在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分，其中磁化强度的二阶微分系数在使用永久磁铁单元形成的该磁场的范围内，曲线相对于磁场从正向变化为负。本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下，通过使用较低的磁场而产生低温。满足该条件的磁性材料的实例是La（Fe，Si）13，（Hf，Ta）Fe 2 N，（Ti，Sc）Fe 2 /（Nb，Mo）Fe 2 N 2，各自含有50〜60原子％的过渡金属如Fe。

9. 发明授权

US06676772B2 Magnetic material 有权
标题翻译：磁性材料
公开(公告)号：US06676772B2
公开(公告)日：2004-01-13
申请号：US10098568
申请日：2002-03-18
申请人： Akiko Saito , Tadahiko Kobayashi , Takao Sawa , Masashi Sahashi
发明人： Akiko Saito , Tadahiko Kobayashi , Takao Sawa , Masashi Sahashi
IPC分类号： H01F1055
CPC分类号： H01F1/015 , F25B21/00 , Y02B30/66
摘要： The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
摘要翻译：本发明的磁性制冷用磁性材料的特征在于，在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分，其中磁化强度的二阶微分系数在使用永久磁铁单元形成的该磁场的范围内，曲线相对于磁场从正向变化为负。本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下，通过使用较低的磁场而产生低温。满足该条件的磁性材料的实例是La（Fe，Si）13，（Hf，Ta）Fe 2，（Ti，Sc）Fe 2和（Nb，Mo）Fe 2，每个含有50至60原子％的过渡金属如Fe。

10. 发明授权

US06475302B2 Permanent magnet 失效
标题翻译：永久磁铁
公开(公告)号：US06475302B2
公开(公告)日：2002-11-05
申请号：US09749803
申请日：2000-12-28
申请人： Wu Mei , Toshiya Sakamoto , Shinya Sakurada , Takao Sawa , Akihiko Tsutai , Akiko Saito , Masashi Sahashi
发明人： Wu Mei , Toshiya Sakamoto , Shinya Sakurada , Takao Sawa , Akihiko Tsutai , Akiko Saito , Masashi Sahashi
IPC分类号： H01F1055
CPC分类号： H01F1/058 , H01F1/0306 , H01F1/055 , H01F1/057
摘要： Disclosed is a permanent magnet which comprises an alloy containing a hard magnetic phase having a ThMn12 type tetragonal structure and a nonmagnetic phase. The alloy is represented by a general formula given below: [R1-a(M1)a][T1-b-c(M2)b(M3)c]dx&agr; where R is at least one rare earth element (including Y), Ml is at least one element selected from the group consisting of Zr and Hf, T is at least one element selected from the group consisting of Fe, Co and Ni, M2 is at least one element selected from the group consisting of Cu, Bi, Sn, Mg, In and Pb, M3 is at least one element selected from the group consisting of Al, Ga, Ge, Zn, B, P and S, X is at least one element selected from the group consisting of Si, Ti, V, Cr, Mn, Nb, Mo, Ta and W, and the atomic ratios of a, b, c, d and &agr; fall within the ranges of 0≦a≦0.6, 0.01≦b≦0.20, 0≦c≦0.05, 6≦d≦11, and 0.5≦&agr;≦2.0.
摘要翻译：公开了一种永磁体，其包含含有ThMn 12型四方晶系的硬磁相和非磁性相的合金。该合金由以下给出的通式表示：其中R是至少一种稀土元素（包括Y），M1是选自Zr和Hf中的至少一种元素，T是至少一种选自由Fe，Co和Ni构成的组，M2是选自Cu，Bi，Sn，Mg，In和Pb中的至少一种元素，M3是选自Al，Ga，Ge中的至少一种元素，Zn，B，P和S中的至少一种，X是选自由Si，Ti，V，Cr，Mn，Nb，Mo，Ta和W组成的组中的至少一种元素，并且a，b，c， d和α落在0 <= a <= 0.6,0.01 <= b <= 0.20,0 <= c <= 0.05,6 <= d <= 11和0.5 <=α<2.0的范围内。

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