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    • 1. 发明申请
    • Magnetic material
    • 磁性材料
    • US20050000230A1
    • 2005-01-06
    • US10718518
    • 2003-11-24
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • F25B21/00H01F1/01
    • H01F1/015F25B21/00Y02B30/66
    • The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
    • 本发明的磁性制冷用磁性材料的特征在于,在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分,其中磁化强度的二阶微分系数 在使用永久磁铁单元形成的该磁场的范围内,曲线相对于磁场从正向变化为负。 本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下,通过使用较低的磁场而产生低温。 满足该条件的磁性材料的实例是La(Fe,Si)13,(Hf,Ta)Fe 2,(Ti,Sc)Fe 2和(Nb,Mo)Fe 2,每个含有50至60原子%的过渡金属 如Fe。
    • 2. 发明授权
    • Magnetic material
    • 磁性材料
    • US06676772B2
    • 2004-01-13
    • US10098568
    • 2002-03-18
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • H01F1055
    • H01F1/015F25B21/00Y02B30/66
    • The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
    • 本发明的磁性制冷用磁性材料的特征在于,在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分,其中磁化强度的二阶微分系数 在使用永久磁铁单元形成的该磁场的范围内,曲线相对于磁场从正向变化为负。 本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下,通过使用较低的磁场而产生低温。 满足该条件的磁性材料的实例是La(Fe,Si)13,(Hf,Ta)Fe 2,(Ti,Sc)Fe 2和(Nb,Mo)Fe 2,每个含有50至60原子%的过渡金属 如Fe。
    • 3. 发明授权
    • Magnetic material
    • 磁性材料
    • US07076958B2
    • 2006-07-18
    • US10718518
    • 2003-11-24
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • Akiko SaitoTadahiko KobayashiTakao SawaMasashi Sahashi
    • F25B21/00C09K5/00H01F1/04
    • H01F1/015F25B21/00Y02B30/66
    • The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
    • 本发明的磁性制冷用磁性材料的特征在于,在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分,其中磁化强度的二阶微分系数 在使用永久磁铁单元形成的该磁场的范围内,曲线相对于磁场从正向变化为负。 本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下,通过使用较低的磁场而产生低温。 满足该条件的磁性材料的实例是La(Fe,Si)13,(Hf,Ta)Fe 2 N,(Ti,Sc)Fe 2 /(Nb,Mo)Fe 2 N 2,各自含有50〜60原子%的过渡金属如Fe。
    • 4. 发明授权
    • Permanent magnet
    • 永久磁铁
    • US06475302B2
    • 2002-11-05
    • US09749803
    • 2000-12-28
    • Wu MeiToshiya SakamotoShinya SakuradaTakao SawaAkihiko TsutaiAkiko SaitoMasashi Sahashi
    • Wu MeiToshiya SakamotoShinya SakuradaTakao SawaAkihiko TsutaiAkiko SaitoMasashi Sahashi
    • H01F1055
    • H01F1/058H01F1/0306H01F1/055H01F1/057
    • Disclosed is a permanent magnet which comprises an alloy containing a hard magnetic phase having a ThMn12 type tetragonal structure and a nonmagnetic phase. The alloy is represented by a general formula given below: [R1-a(M1)a][T1-b-c(M2)b(M3)c]dx&agr; where R is at least one rare earth element (including Y), Ml is at least one element selected from the group consisting of Zr and Hf, T is at least one element selected from the group consisting of Fe, Co and Ni, M2 is at least one element selected from the group consisting of Cu, Bi, Sn, Mg, In and Pb, M3 is at least one element selected from the group consisting of Al, Ga, Ge, Zn, B, P and S, X is at least one element selected from the group consisting of Si, Ti, V, Cr, Mn, Nb, Mo, Ta and W, and the atomic ratios of a, b, c, d and &agr; fall within the ranges of 0≦a≦0.6, 0.01≦b≦0.20, 0≦c≦0.05, 6≦d≦11, and 0.5≦&agr;≦2.0.
    • 公开了一种永磁体,其包含含有ThMn 12型四方晶系的硬磁相和非磁性相的合金。 该合金由以下给出的通式表示:其中R是至少一种稀土元素(包括Y),M1是选自Zr和Hf中的至少一种元素,T是至少一种选自 由Fe,Co和Ni构成的组,M2是选自Cu,Bi,Sn,Mg,In和Pb中的至少一种元素,M3是选自Al,Ga,Ge中的至少一种元素 ,Zn,B,P和S中的至少一种,X是选自由Si,Ti,V,Cr,Mn,Nb,Mo,Ta和W组成的组中的至少一种元素,并且a,b,c, d和α落在0 <= a <= 0.6,0.01 <= b <= 0.20,0 <= c <= 0.05,6 <= d <= 11和0.5 <=α<2.0的范围内。
    • 7. 发明申请
    • PHASED-ARRAY SYNTHETIC APERTURE SONAR SYSTEM
    • 同步阵列合成孔径声纳系统
    • US20130039150A1
    • 2013-02-14
    • US13635849
    • 2011-03-18
    • Jin GotoTomohito EbinaTakao Sawa
    • Jin GotoTomohito EbinaTakao Sawa
    • G01S15/89
    • G01S15/8904
    • It is an object to maintain a processing speed while increasing accuracy of a sonar image. Disclosed is a phased-array synthetic-aperture sonar system, including: a plurality of phased array processors (9) which perform, in parallel, phased array processing for a plurality of incoming data; a phased array distribution device (8) which distributes each simultaneously incoming data to the plurality of phased array processors (9), the incoming data being input from a plurality of receivers disposed in a platform; a synthetic aperture processor (11) which performs synthetic aperture processing by using a plurality of phased array processing results; and a data-shaping buffer device (10) which transfers the phased array processing results output from the plurality of phased array processors (9) to the synthetic aperture processor (11) in the order of receipt of the incoming data.
    • 本发明的目的是在提高声纳图像的精度的同时保持处理速度。 公开了一种相控阵合成孔径声纳系统,其包括:多个相控阵列处理器(9),其并行执行多个输入数据的相控阵列处理; 相控阵分布装置(8),其将每个同时输入的数据分配到所述多个相控阵列处理器(9),所述输入数据从布置在平台中的多个接收器输入; 通过使用多个相控阵列处理结果执行合成孔径处理的合成孔径处理器(11); 以及数据整形缓冲器装置(10),其以接收到的输入数据的顺序将从多个相控阵列处理器(9)输出的相控阵处理结果传送到合成孔径处理器(11)。