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1. 发明授权

US06275515B1 Semiconductor laser device and method of producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
申请人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
发明人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。

2. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

3. 发明授权

US5838704A Pulsation laser having an active region with a thicker central region in a resonator length direction 失效
标题翻译：脉冲激光器具有在谐振器长度方向上具有较厚中心区域的有源区域
公开(公告)号：US5838704A
公开(公告)日：1998-11-17
申请号：US649447
申请日：1996-05-17
申请人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
发明人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/065 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/343 , H01S3/07
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/106 , H01S5/2077 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.
摘要翻译：脉动激光器包括n型GaAs衬底上的n型AlGaAs覆层，具有中心增加厚度区域的三个量子阱有源层，并且设置在包覆层上，并且配置在量子阱活性物上的p型AlGaAs覆层层。有源层的增加的厚度区域不超过激光谐振器长度的四分之一。

4. 发明授权

US5675601A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5675601A
公开(公告)日：1997-10-07
申请号：US584235
申请日：1996-01-11
申请人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
发明人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2004
摘要： A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0
摘要翻译：半导体激光器件在第一导电型GaAs衬底上依次包括第一导电型GaAs缓冲层，第一导电型AlsGa1-sAs（0

5. 发明授权

US5439723A Substrate for producing semiconductor wafer 失效
标题翻译：用于生产半导体晶片的基板
公开(公告)号：US5439723A
公开(公告)日：1995-08-08
申请号：US150879
申请日：1993-11-12
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B32B3/02
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： A semiconductor wafer includes a notch or a hole used in preparing an orientation flat on the wafer. The notch in the wafer includes a side that is perpendicular to the surfaces of the wafer and aligned along a cleavage plane of the wafer for forming the orientation flat by cleaving. A hole in a wafer preferably includes an axis aligned along the cleaving plane. A sharp, non-rounded cleavage is formed by preparing the notch or hole after the completion of any etching processes or other steps that may round the edges of the flat. The sharp edges aid in achieving a precision alignment using the orientation flat.
摘要翻译：半导体晶片包括用于制备晶片上的定向平面的凹口或孔。晶片中的凹口包括垂直于晶片表面并沿着晶片的解理平面排列的一侧，用于通过切割形成取向平面。晶片中的孔优选地包括沿着切割平面对准的轴。通过在完成任何蚀刻工艺之后制备凹口或孔而形成尖锐的非圆形裂纹，或者可以在平面边缘周围的其它步骤。锋利的边缘有助于使用定向平板实现精确对准。

6. 发明授权

US5279077A Method for producing semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US5279077A
公开(公告)日：1994-01-18
申请号：US977154
申请日：1992-11-16
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B24B49/00
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： In a method for forming a semiconductor wafer with an orientation flat along a cleavage plane, a groove or hole is formed in the substrate on a line along which the substrate is cleaved to form an orientation flat and the substrate is treated to produce a mirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from the groove or hole to form the orientation flat. Accordingly, edges of the cleavage plane are not rounded due to the surface treatment. In addition, the substrate is easily cleaved along the cleavage plane from the groove or the hole. As a result, a semiconductor wafer having a sharp cleavage plane as an orientation flat is produced with improved yield, and alignment is performed with high precision in a subsequent process, such as photolithography.
摘要翻译：在沿着解理面形成具有取向平坦的半导体晶片的方法中，在基板上的基板上形成凹槽或孔，沿着基板被切割以形成取向平面，并且将基板处理以产生反射镜表面。然后，具有镜面表面的基板从凹槽或孔中分离以形成取向平面。因此，由于表面处理，解理面的边缘不会变圆。此外，衬底沿着解理平面容易地从凹槽或孔中裂开。结果，以提高的产量制造具有作为取向平面的尖锐解理面的半导体晶片，并且在随后的工艺（例如光刻）中以高精度进行对准。

7. 发明授权

US4829023A Method of producing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US4829023A
公开(公告)日：1989-05-09
申请号：US126501
申请日：1987-11-30
申请人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
发明人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/2232 , H01S5/2237 , Y10S148/017 , Y10S148/056 , Y10S148/095 , Y10S148/118
摘要： A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.
摘要翻译：一种半导体激光器的制造方法，包括在基板上同时连续生长至少两个半导体层，最终生长层不含铝和在含有铝的最终生长层之前生长的层，在最终生长层上蚀刻条纹槽露出包含铝的半导体层的一部分，在最终生长层上生长不包括铝的第二半导体层和含有铝的半导体层的暴露表面，并且在不含铝的第二半导体层上生长包括铝的半导体层。

8. 发明授权

US4914668A Semiconductor laser including a reflection film 失效
标题翻译：半导体激光器包括反射膜
公开(公告)号：US4914668A
公开(公告)日：1990-04-03
申请号：US308744
申请日：1989-02-10
申请人： Yutaka Nagai , Yutaka Mihashi , Kenji Ikeda , Yoichiro Ota
发明人： Yutaka Nagai , Yutaka Mihashi , Kenji Ikeda , Yoichiro Ota
IPC分类号： B41J2/44 , G03G15/04 , G03G15/043 , H01S5/00 , H01S5/028 , H01S5/068 , H04N1/113
CPC分类号： H01S5/028
摘要： A semiconductor laser device for a laser printer in which a reflection film having reflectance in a range of 45 to 65% is provided on a laser output facet for outputting a laser output beam.
摘要翻译：一种用于激光打印机的半导体激光装置，其中反射率在45％至65％范围内的反射膜设置在用于输出激光输出光束的激光输出面上。

9. 发明授权

US4733399A Semiconductor laser device having integral optical output modulator 失效
标题翻译：具有集成光输出调制器的半导体激光器件
公开(公告)号：US4733399A
公开(公告)日：1988-03-22
申请号：US856937
申请日：1986-04-25
申请人： Yutaka Mihashi , Yutaka Nagai
发明人： Yutaka Mihashi , Yutaka Nagai
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/22 , H01S3/19
CPC分类号： H01S5/06203 , H01S5/0425 , H01S5/2202
摘要： A semiconductor laser device comprises a semiconductor laser portion (17) including a double hetero structure and a vertical MIS-FET portion (18) form on, and in series with, the semiconductor laser portion (17). The vertical MIS-FET portion (18) includes an n-type GaAs layer (6), a p-type GaAs layer (7), an n-type GaAs layer (8), and a striped groove (31) having V-shaped cross-section formed from the top surface of the n-type GaAs layer (8) to the n-type GaAs layer (6). A metal gate electrode (11) is further provided on the top surface of the striped groove (31), on an insulating film (10). A current (41)flowing through the vertical MIS-FET portion (18) is changed according to a photo modulating signal applied to the metal gate electrode (11) and, a current (40) is also changed according to the current (41). Accordingly, a laser oscillation output of the semiconductor laser portion (17) is also changed to accomplish the optical output modulation of the semiconductor laser.
摘要翻译：一种半导体激光器件包括：半导体激光器部分（17），包括双异质结构和与半导体激光器部分（17）形成并串联的垂直MIS-FET部分（18）。垂直MIS-FET部分（18）包括n型GaAs层（6），p型GaAs层（7），n型GaAs层（8）和具有V型GaAs层的条纹槽（31）形成由n型GaAs层（8）的顶面到n型GaAs层（6）的截面。在绝缘膜（10）上，在条纹槽（31）的上表面上还设有金属栅电极（11）。流过垂直MIS-FET部分（18）的电流（41）根据施加到金属栅极（11）的光调制信号而改变，并且电流（40）也根据电流（41）而改变，。因此，半导体激光器部分（17）的激光振荡输出也被改变以实现半导体激光器的光输出调制。

10. 发明授权

US4841535A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4841535A
公开(公告)日：1989-06-20
申请号：US231003
申请日：1988-08-11
申请人： Yutaka Mihashi , Yutaka Nagai , Kenji Ikeda
发明人： Yutaka Mihashi , Yutaka Nagai , Kenji Ikeda
IPC分类号： H01S5/00 , H01S5/223
CPC分类号： H01S5/2232 , H01S5/2237
摘要： A semiconductor laser device includes semiconductor layers including a semiconductor layer having a stripe groove having a reverse trapezoidal cross section and a bent active layer spaced from and in the configuration of the groove wherein the bottom width of the groove is less than 2 microns and the distance from the active layer to the bottom of the groove is more than 0.6 micron.
摘要翻译：半导体激光器件包括半导体层，其包括半导体层，该半导体层具有带有反向梯形截面的条纹沟槽和与凹槽的形状间隔开的凹槽的弯曲有源层，其中凹槽的底部宽度小于2微米，从活性层到凹槽的底部大于0.6微米。

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